柔性直流输电技术是大规模新能源外送的重要载体,未来我国大量的沙漠、戈壁、荒漠大规模新能源基地海拔偏高,甚至超过4000 m,宇宙射线大气中子通量大,严重威胁柔性直流换流阀(voltage sourced converter-high voltage direct current,VS...柔性直流输电技术是大规模新能源外送的重要载体,未来我国大量的沙漠、戈壁、荒漠大规模新能源基地海拔偏高,甚至超过4000 m,宇宙射线大气中子通量大,严重威胁柔性直流换流阀(voltage sourced converter-high voltage direct current,VSC-HVDC)功率器件的安全可靠运行。但是,目前我国柔性直流工程中换流阀尚无2000 m以上高海拔地区应用案例,国内外也缺乏大气中子辐照功率器件的失效率数据,大气中子对功率器件的影响规律不明,难以支撑工程应用。该文首次针对柔性直流使用的4.5 kV等级主流功率器件,提出绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)、旁路转折晶闸管等功率器件高海拔大气中子辐照效应的等效加速试验方法,并开展试验,结合试验结果分析了器件工作电压、工作温度、中子通量对器件失效率的影响规律,得出高海拔地区IGBT和旁路转折晶闸管的大气中子辐照失效率,为高海拔VSC-HVDC的安全设计提供指导。展开更多
A novel substrate integrated microstrip to ultra-thin cavity filter transition operating in the W-band is proposed in this letter.The structure is a new method of connecting microstrip circuits and waveguide filters,a...A novel substrate integrated microstrip to ultra-thin cavity filter transition operating in the W-band is proposed in this letter.The structure is a new method of connecting microstrip circuits and waveguide filters,and this new structure enables a planar integrated transition from microstrip lines to ultra-thin cavity filters,thereby reducing the size of the transition structure and achieving miniaturization.The structure includes a conventional tapered microstrip transition structure,which guides the electromagnetic field from the microstrip line to the reduced-height dielectric-filled waveguide,and an air-filled matching cavity which is placed between the dielectric-filled waveguide and the ultra-thin cavity filter.The heights of the microstrip line,the dielectric-filled waveguide and the ultra-thin cavity filter are the same,enabling seamless integration within a planar radio-frequency(RF)circuit.To facilitate testing,mature finline transition structures are integrated at both ends of the microstrip line during fabrications.The simulation results of the fabricated microstrip to ultra-thin cavity filter transition with the finline transition structure,with a passband of 91.5-96.5 GHz,has an insertion loss of less than 1.9 dB and a return loss lower than-20 dB.And the whole structure has also been measured which achieves an insertion loss less than 2.6 dB and a return loss lower than-15 dB within the filter's passband,including the additional insertion loss introduced by the finline transitions.Finally,a W-band compact up-conversion module is designed,and the test results show that after using the proposed structure,the module achieves 95 dBc suppression of the 84 GHz local oscillator.It is also demonstrated that the structure proposed in this letter achieves miniaturization of the system integration without compromising the filter performance.展开更多
针对辐射前后环栅与条栅结构部分耗尽绝缘体上硅(SOI,Silicon On Insula-tor)器件关态电流的变化展开实验,研究结果表明辐射诱使关态电流增加主要取决于侧壁泄漏电流、背栅寄生晶体管导通、带-带隧穿与背栅泄漏电流的耦合效应.在条栅结...针对辐射前后环栅与条栅结构部分耗尽绝缘体上硅(SOI,Silicon On Insula-tor)器件关态电流的变化展开实验,研究结果表明辐射诱使关态电流增加主要取决于侧壁泄漏电流、背栅寄生晶体管导通、带-带隧穿与背栅泄漏电流的耦合效应.在条栅结构器件中,辐射诱生场氧化层固定电荷将使得器件侧壁泄漏电流增加,器件前、背栅关态电流随总剂量变化明显;在环栅结构器件中,辐射诱使背栅晶体管开启将使得前栅器件关态电流变大,而带-带隧穿与背栅泄漏电流的耦合效应将使得器件关态电流随前栅电压减小而迅速增加.基于以上结果,可通过改良版图结构以提高SOI器件的抗总剂量电离辐射能力.展开更多
基金Supported by the Fundamental Research Funds for the Central Universities(ZYGX2021J008)。
文摘A novel substrate integrated microstrip to ultra-thin cavity filter transition operating in the W-band is proposed in this letter.The structure is a new method of connecting microstrip circuits and waveguide filters,and this new structure enables a planar integrated transition from microstrip lines to ultra-thin cavity filters,thereby reducing the size of the transition structure and achieving miniaturization.The structure includes a conventional tapered microstrip transition structure,which guides the electromagnetic field from the microstrip line to the reduced-height dielectric-filled waveguide,and an air-filled matching cavity which is placed between the dielectric-filled waveguide and the ultra-thin cavity filter.The heights of the microstrip line,the dielectric-filled waveguide and the ultra-thin cavity filter are the same,enabling seamless integration within a planar radio-frequency(RF)circuit.To facilitate testing,mature finline transition structures are integrated at both ends of the microstrip line during fabrications.The simulation results of the fabricated microstrip to ultra-thin cavity filter transition with the finline transition structure,with a passband of 91.5-96.5 GHz,has an insertion loss of less than 1.9 dB and a return loss lower than-20 dB.And the whole structure has also been measured which achieves an insertion loss less than 2.6 dB and a return loss lower than-15 dB within the filter's passband,including the additional insertion loss introduced by the finline transitions.Finally,a W-band compact up-conversion module is designed,and the test results show that after using the proposed structure,the module achieves 95 dBc suppression of the 84 GHz local oscillator.It is also demonstrated that the structure proposed in this letter achieves miniaturization of the system integration without compromising the filter performance.
文摘针对辐射前后环栅与条栅结构部分耗尽绝缘体上硅(SOI,Silicon On Insula-tor)器件关态电流的变化展开实验,研究结果表明辐射诱使关态电流增加主要取决于侧壁泄漏电流、背栅寄生晶体管导通、带-带隧穿与背栅泄漏电流的耦合效应.在条栅结构器件中,辐射诱生场氧化层固定电荷将使得器件侧壁泄漏电流增加,器件前、背栅关态电流随总剂量变化明显;在环栅结构器件中,辐射诱使背栅晶体管开启将使得前栅器件关态电流变大,而带-带隧穿与背栅泄漏电流的耦合效应将使得器件关态电流随前栅电压减小而迅速增加.基于以上结果,可通过改良版图结构以提高SOI器件的抗总剂量电离辐射能力.
