Thermal quenching(TQ)at elevated temperature is a major factor affecting the luminescent intensity and efficiency of phosphors.Improving the thermal stability of phosphors and weakening the TQ effect are of significan...Thermal quenching(TQ)at elevated temperature is a major factor affecting the luminescent intensity and efficiency of phosphors.Improving the thermal stability of phosphors and weakening the TQ effect are of significance for the high-quality illumination of phosphor-converted WLEDs.Here,a novel red-emitting phosphor K_(2)Zn(PO_(3))_(4)∶Mn^(2+)is synthesized by standard high temperature solid state reaction in ambient atmosphere,which is a new member of self-reduction system.An effective synthesis strategy is proposed to optimize its photoluminescent performances.Combined with X-ray photoelectron spectroscopy and X-ray absorption fine structure spectroscopy,oxygen vacancy defects introduced by Mn doping are proved to play an important role in the transition of Mn^(4+)→Mn^(2+).Thermoluminescence analysis reveals that the distribution of trap levels,especially the deep ones,is effectively regulated by the controllable crystallization and significantly affect the thermal stability of phosphors.Then a defect-assisted model is proposed to address the inner mechanism of the phenomenon.The carriers trapped by deep trap levels can be released under the high-temperature stimulus,which return back to the luminescent centers and participate in the radiative recombination to improve thermal stability.This study provides a new crystallographic idea and theoretical support for obtaining luminescent materials with high thermal stability.展开更多
文摘Thermal quenching(TQ)at elevated temperature is a major factor affecting the luminescent intensity and efficiency of phosphors.Improving the thermal stability of phosphors and weakening the TQ effect are of significance for the high-quality illumination of phosphor-converted WLEDs.Here,a novel red-emitting phosphor K_(2)Zn(PO_(3))_(4)∶Mn^(2+)is synthesized by standard high temperature solid state reaction in ambient atmosphere,which is a new member of self-reduction system.An effective synthesis strategy is proposed to optimize its photoluminescent performances.Combined with X-ray photoelectron spectroscopy and X-ray absorption fine structure spectroscopy,oxygen vacancy defects introduced by Mn doping are proved to play an important role in the transition of Mn^(4+)→Mn^(2+).Thermoluminescence analysis reveals that the distribution of trap levels,especially the deep ones,is effectively regulated by the controllable crystallization and significantly affect the thermal stability of phosphors.Then a defect-assisted model is proposed to address the inner mechanism of the phenomenon.The carriers trapped by deep trap levels can be released under the high-temperature stimulus,which return back to the luminescent centers and participate in the radiative recombination to improve thermal stability.This study provides a new crystallographic idea and theoretical support for obtaining luminescent materials with high thermal stability.
文摘铌酸锂晶体的内偏置场对铁电应用、电光应用和非线性光学应用等均有直接影响。本工作建立了铌酸锂(LN)晶体内偏置场测试方法,对同成分铌酸锂(CLN)晶体、近化学计量比铌酸锂(nSLN)晶体、掺杂铌酸锂(doped LN)晶体的内偏置场和矫顽场进行测量。结果表明,CLN晶体内偏置场最高(E_(int)=2.53 kV/mm),nSLN晶体的内偏置场大幅降低,其中富锂熔体法生长和气相输运平衡(vapor transport equilibration,VTE)法结合得到的nSLN晶体的内偏置场最小,与CLN晶体相比降低了约两个数量级;掺杂铌酸锂晶体的内偏置场与CLN晶体相比也普遍降低,其中掺6.5%(摩尔分数)Mg的CLN晶体的内偏置场约为CLN晶体的四分之一,掺7%(摩尔分数)Zn的CLN晶体的内偏置场约为CLN晶体的六分之一。最后对组分和掺杂影响内偏置场的因素进行了简要分析。
