基金Supported by National Natural Science Foundation of China (617905 80,61790581,61790582,61435012)the National Key Technologies R&D Program of China (2018YFA0306101)+1 种基金the Key R&D Program of Guangdong Province (2018R030329001)the Scientific Instrument Developing Project of the Chinese Academy of Sciences (YJKYYQ20170032)
文摘通过MBE外延系统生长了1.3µm的GaAs基InAs量子点激光器.为了获得更好的器件性能,InAs量子点的最优生长温度被标定为520℃,并且在有源区中引入Be掺杂.制备了脊宽100µm,腔长2 mm的激光器单管器件,在未镀膜的情况下,达到了峰值功率1.008 W的室温连续工作,阈值电流密度为110 A/cm^-2,在80℃下仍然可以实现连续工作,在50℃以下范围内,特征温度达到405 K.
