A diode with Tb(AcAc)3Phen as emitting layer and PPV,Vlq3 as hole and electron transportion layer,respectively,has been prepared.the spectrum of the diode shows a characteristic emission line of pure TB(3+).The recomb...A diode with Tb(AcAc)3Phen as emitting layer and PPV,Vlq3 as hole and electron transportion layer,respectively,has been prepared.the spectrum of the diode shows a characteristic emission line of pure TB(3+).The recombination region of injected electrons and holes in the diode has been discussed.展开更多
We have demonstrated an electroluminescent (EL) device having the structure of ITO/PPV/Alq3:PVK/Al. This device could be driven by either forward bias or backward bias, and its EL originated from PPV layer.
文摘A diode with Tb(AcAc)3Phen as emitting layer and PPV,Vlq3 as hole and electron transportion layer,respectively,has been prepared.the spectrum of the diode shows a characteristic emission line of pure TB(3+).The recombination region of injected electrons and holes in the diode has been discussed.
文摘We have demonstrated an electroluminescent (EL) device having the structure of ITO/PPV/Alq3:PVK/Al. This device could be driven by either forward bias or backward bias, and its EL originated from PPV layer.
