随着通信技术升级以及5G通信应用的驱动,各种智能设备所需的滤波器数量激增,促进了滤波器市场的繁荣,但对其性能要求也越来越高,例如大带宽、高频率、高功率容量、微型化、集成化以及低成本等指标是学术界与产业界重点关注的方向,而基...随着通信技术升级以及5G通信应用的驱动,各种智能设备所需的滤波器数量激增,促进了滤波器市场的繁荣,但对其性能要求也越来越高,例如大带宽、高频率、高功率容量、微型化、集成化以及低成本等指标是学术界与产业界重点关注的方向,而基于薄膜体声波谐振器(Thin Film Bulk Acoustic Resonator,FBAR)技术的FBAR滤波器已成为最有前景的滤波器之一。另外,当前空腔型FBAR滤波器已取得了一定的商业成功,但是仍面临性能不足、工艺复杂、成本略高、技术受限等困境。为此,本文试图从器件理论研究与结构优化、高性能压电材料制备与优化、新型工艺开发及技术融合三方面对FBAR滤波器的相关问题与关键技术进行综述,旨在为该研究领域的学者梳理FBAR滤波器技术进阶与迭代的脉络,以期为未来研究的路径与方向提供若干启发性思考。展开更多
金属氧化物薄膜晶体管(Metal oxide thin film transistors,MOTFTs)因其具有较高的载流子迁移率和较好的电学稳定性,在大尺寸发光显示驱动背板应用方面极具潜力。此外,MOTFTs与非晶硅薄膜晶体管的制备工艺兼容,制造成本较低,具有较大市...金属氧化物薄膜晶体管(Metal oxide thin film transistors,MOTFTs)因其具有较高的载流子迁移率和较好的电学稳定性,在大尺寸发光显示驱动背板应用方面极具潜力。此外,MOTFTs与非晶硅薄膜晶体管的制备工艺兼容,制造成本较低,具有较大市场竞争优势。然而,衡量MOTFTs性能的两个关键指标——迁移率和稳定性之间的矛盾限制了其高端显示应用。因此,开发高迁移率兼具高稳定性的MOTFTs成为研究热点和产业竞争焦点。大量研究表明,稀土掺杂氧化物有源半导体材料体系有望实现这一目标。本文重点综述兼具高迁移率和高稳定性的稀土掺杂氧化物材料设计及MOTFTs已达到的性能,探讨稀土掺杂金属氧化物薄膜晶体管(RE-MOTFTs)面临的挑战和发展潜力。展开更多
As a representative transition metal dichalcogenides(TMD),NiTe_(2)has an ultra-fast optical response,high carrier mobility,and excellent environmental stability.It has a broad application prospect in the fields of ene...As a representative transition metal dichalcogenides(TMD),NiTe_(2)has an ultra-fast optical response,high carrier mobility,and excellent environmental stability.It has a broad application prospect in the fields of ener-gy,biomedicine,optoelectronic devices,and so on.At present,there have been scant reports on the application of NiTe_(2)in the field of ultrafast photonics.In this work,NiTe_(2)was synthesized by chemical vapor deposition(CVD)and integrated with a tapered optical fiber to achieve mode-locking in an erbium-doped fiber laser(EDFL)and a thu-lium-doped fiber laser(TDFL).The mode-locked EDFL exhibited a pulse width of 678 fs and an output power of 3.92 mW.The pulse width of mode-locked TDFL was estimated to have a pulse width of 694 fs with an output power of 21.64 mW.These results demonstrate that NiTe_(2)is an effective saturable absorber material with potential applica-tions in the field of ultrafast optics.展开更多
文摘随着通信技术升级以及5G通信应用的驱动,各种智能设备所需的滤波器数量激增,促进了滤波器市场的繁荣,但对其性能要求也越来越高,例如大带宽、高频率、高功率容量、微型化、集成化以及低成本等指标是学术界与产业界重点关注的方向,而基于薄膜体声波谐振器(Thin Film Bulk Acoustic Resonator,FBAR)技术的FBAR滤波器已成为最有前景的滤波器之一。另外,当前空腔型FBAR滤波器已取得了一定的商业成功,但是仍面临性能不足、工艺复杂、成本略高、技术受限等困境。为此,本文试图从器件理论研究与结构优化、高性能压电材料制备与优化、新型工艺开发及技术融合三方面对FBAR滤波器的相关问题与关键技术进行综述,旨在为该研究领域的学者梳理FBAR滤波器技术进阶与迭代的脉络,以期为未来研究的路径与方向提供若干启发性思考。
文摘金属氧化物薄膜晶体管(Metal oxide thin film transistors,MOTFTs)因其具有较高的载流子迁移率和较好的电学稳定性,在大尺寸发光显示驱动背板应用方面极具潜力。此外,MOTFTs与非晶硅薄膜晶体管的制备工艺兼容,制造成本较低,具有较大市场竞争优势。然而,衡量MOTFTs性能的两个关键指标——迁移率和稳定性之间的矛盾限制了其高端显示应用。因此,开发高迁移率兼具高稳定性的MOTFTs成为研究热点和产业竞争焦点。大量研究表明,稀土掺杂氧化物有源半导体材料体系有望实现这一目标。本文重点综述兼具高迁移率和高稳定性的稀土掺杂氧化物材料设计及MOTFTs已达到的性能,探讨稀土掺杂金属氧化物薄膜晶体管(RE-MOTFTs)面临的挑战和发展潜力。
基金National Natural Science Foundations of China (61571188), Scientific Research Fund of Hunan Province Education Department (12A074), Natural Science Foundation of Hunan Province (10JJ6087)
基金Supported by Guangdong Basic and Applied Basic Research Fund,China(2024A1515012429)。
文摘As a representative transition metal dichalcogenides(TMD),NiTe_(2)has an ultra-fast optical response,high carrier mobility,and excellent environmental stability.It has a broad application prospect in the fields of ener-gy,biomedicine,optoelectronic devices,and so on.At present,there have been scant reports on the application of NiTe_(2)in the field of ultrafast photonics.In this work,NiTe_(2)was synthesized by chemical vapor deposition(CVD)and integrated with a tapered optical fiber to achieve mode-locking in an erbium-doped fiber laser(EDFL)and a thu-lium-doped fiber laser(TDFL).The mode-locked EDFL exhibited a pulse width of 678 fs and an output power of 3.92 mW.The pulse width of mode-locked TDFL was estimated to have a pulse width of 694 fs with an output power of 21.64 mW.These results demonstrate that NiTe_(2)is an effective saturable absorber material with potential applica-tions in the field of ultrafast optics.
