The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2) quantum ...The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2) quantum dot(QDs)materials in a simple and convenient way to form a heterogeneous structure.Various performance enhancements have been realized through the formation of typeⅡenergy bands in heterostructures,opening up new research directions for the future development of photodetector devices.This work successfully fabricated a high-sensitivity photodetector based on WS_(2)QDs/GaAs NWs heterostructure.Under 660 nm laser excitation,the photodetector exhibits a responsivity of 368.07 A/W,a detectivity of 2.7×10^(12)Jones,an external quantum efficiency of 6.47×10^(2)%,a low-noise equivalent power of 2.27×10^(-17)W·Hz^(-1/2),a response time of 0.3 s,and a recovery time of 2.12 s.This study provides a new solution for the preparation of high-performance GaAs detectors and promotes the development of optoelectronic devices for GaAs NWs.展开更多
An attempt was made to combine molecular imprinting technique and the electropolymerization of self-assembled o-amino thiophenol（o-AT） to prepare imprinted film using cinchonine as the model template analyte. The pr...An attempt was made to combine molecular imprinting technique and the electropolymerization of self-assembled o-amino thiophenol（o-AT） to prepare imprinted film using cinchonine as the model template analyte. The procedure of forming recognition cavity and the effect of the ratio of monomers to templates on the imprinted film, together with sensitivity and selectivity to cinchonine on the imprinted electrode, were demonstrated. An indirect and rapid detection was carried out using potassium ferricyande as a probe. Stable response is achieved within 4 min, covering a linear range (5.0×10-6\)4.0×10-5 mol/L. From the results, the main driving force for recognition is supposed to be hydrophobic interaction, complementary cavity effect and phenyl group for π-π interactions with the enaphthyl residue.展开更多
文摘The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2) quantum dot(QDs)materials in a simple and convenient way to form a heterogeneous structure.Various performance enhancements have been realized through the formation of typeⅡenergy bands in heterostructures,opening up new research directions for the future development of photodetector devices.This work successfully fabricated a high-sensitivity photodetector based on WS_(2)QDs/GaAs NWs heterostructure.Under 660 nm laser excitation,the photodetector exhibits a responsivity of 368.07 A/W,a detectivity of 2.7×10^(12)Jones,an external quantum efficiency of 6.47×10^(2)%,a low-noise equivalent power of 2.27×10^(-17)W·Hz^(-1/2),a response time of 0.3 s,and a recovery time of 2.12 s.This study provides a new solution for the preparation of high-performance GaAs detectors and promotes the development of optoelectronic devices for GaAs NWs.
文摘An attempt was made to combine molecular imprinting technique and the electropolymerization of self-assembled o-amino thiophenol（o-AT） to prepare imprinted film using cinchonine as the model template analyte. The procedure of forming recognition cavity and the effect of the ratio of monomers to templates on the imprinted film, together with sensitivity and selectivity to cinchonine on the imprinted electrode, were demonstrated. An indirect and rapid detection was carried out using potassium ferricyande as a probe. Stable response is achieved within 4 min, covering a linear range (5.0×10-6\)4.0×10-5 mol/L. From the results, the main driving force for recognition is supposed to be hydrophobic interaction, complementary cavity effect and phenyl group for π-π interactions with the enaphthyl residue.
