成功制备出室温激射波长为2μm的Ga Sb基侧向耦合分布反馈量子阱激光器.采用全息曝光及电感耦合等离子体刻蚀技术制备二阶布拉格光栅.优化了光栅制备的刻蚀条件,并获得室温2μm单纵模激射.激光器输出光功率超过5 m W,最大边模抑制比达到...成功制备出室温激射波长为2μm的Ga Sb基侧向耦合分布反馈量子阱激光器.采用全息曝光及电感耦合等离子体刻蚀技术制备二阶布拉格光栅.优化了光栅制备的刻蚀条件,并获得室温2μm单纵模激射.激光器输出光功率超过5 m W,最大边模抑制比达到24 d B.展开更多
基金Supported by the National Basic Research Program of China(2014CB643903,2013CB932904)the National Natural Science Foundation of China(61435012,61306088,61274013)
基金Supported by National Natural Science Foundation of China(11474248,61176127,61006085,61274013,61306013)Key Program for International S&T cooperation Projects of China(2011DFA62380)Ph.D.Programs Foundation of Ministry of Education of China(20105303120002)
基金Supported by National Natural Science Foundation of China(11374211)the Innovation Program of Shanghai Municipal Education Commission(14ZZ020)+1 种基金Shanghai Science and Technology Development Funds(No.15QA1402200)the open fund from HPCL(No.201511-01)
基金Supported by the National Natural Science Foundation of China(61774130,11474248,61790581,51973070)the Ph.D.Pro⁃grams Foundation of Ministry of Education of China(20105303120002)National Key Technology Research and Development Program of the Ministry of Sci⁃ence and Technology of China(2018YFA0209101).
