Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hin...Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hinder system integration due to their specific manufacturing processes.Conversely,metal oxide diodes,with their simple fabrication techniques,offer advantages for system integration.The oxygen vacancy defect of oxide semiconductor will greatly affect the electrical performance of the device,so the performance of the diode can be effectively controlled by adjusting the oxygen vacancy concentration.This study centers on optimizing the performance of diodes by modulating the oxygen vacancy concentration within InGaZnO films through control of oxygen flows during the sputtering process.Experimental results demonstrate that the diode exhibits a forward current density of 43.82 A·cm^(−2),with a rectification ratio of 6.94×10^(4),efficiently rectifying input sine signals with 1 kHz frequency and 5 V magnitude.These results demonstrate its potential in energy conversion and management.By adjusting the oxygen vacancy,a methodology is provided for optimizing the performance of rectifying diodes.展开更多
SPAD阵列的规模不断扩大对读出电路(Read-out Integrated Circuit,ROIC)提出了更高的要求,时间数字转换器(Time to Digital Converter,TDC)是ROIC的核心电路,完成对光子飞行时间(Time-of-Flight,TOF)高精度量化。为避免大规模阵列中高...SPAD阵列的规模不断扩大对读出电路(Read-out Integrated Circuit,ROIC)提出了更高的要求,时间数字转换器(Time to Digital Converter,TDC)是ROIC的核心电路,完成对光子飞行时间(Time-of-Flight,TOF)高精度量化。为避免大规模阵列中高频时钟信号长距离走线而引起的串扰和噪声干扰,抑制初相误差引起的检测精度退化,设计了一种基于内置时钟的ROIC阵列电路,阵列像素间距均为100μm,内置于各像素内的门控环形振荡器(Gated Ring Oscillator,GRO)独立提供像素TDC所需的高频分相时钟信号,各像素GRO均由像素外置锁相环(Phase Locked Loop,PLL)产生的压控信号控制。由于采用一种基于事件驱动的检测策略,只量化光子事件有效触发的TOF,有效降低了系统功耗。该芯片采用TSMC 0.18μm 1.8 V标准CMOS工艺制造,测试结果表明:TDC的时间分辨率和量程分别为102 ps和100 ns,微分非线性DNL低于0.8 LSB,积分非线性INL低于1.3 LSB,系统功耗小于59.3 mW。展开更多
文摘Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hinder system integration due to their specific manufacturing processes.Conversely,metal oxide diodes,with their simple fabrication techniques,offer advantages for system integration.The oxygen vacancy defect of oxide semiconductor will greatly affect the electrical performance of the device,so the performance of the diode can be effectively controlled by adjusting the oxygen vacancy concentration.This study centers on optimizing the performance of diodes by modulating the oxygen vacancy concentration within InGaZnO films through control of oxygen flows during the sputtering process.Experimental results demonstrate that the diode exhibits a forward current density of 43.82 A·cm^(−2),with a rectification ratio of 6.94×10^(4),efficiently rectifying input sine signals with 1 kHz frequency and 5 V magnitude.These results demonstrate its potential in energy conversion and management.By adjusting the oxygen vacancy,a methodology is provided for optimizing the performance of rectifying diodes.
