This paper investigates the luminescence characteristics of Eu2＋ activated Ca2SiO4, Sr2SiO4 and Ba2SiO4 phosphors. Two emission bands are assigned to the f-d transitions of Eu2＋ ions doped into two different cation ...This paper investigates the luminescence characteristics of Eu2＋ activated Ca2SiO4, Sr2SiO4 and Ba2SiO4 phosphors. Two emission bands are assigned to the f-d transitions of Eu2＋ ions doped into two different cation sites in host lattices, and show different emission colour variation caused by substituting M2＋ cations for smaller cations. This behaviour is discussed in terms of two competing factors of the crystal field strength and covalence. These phosphors with maximum excitation of around 370 nm can be applied as a colour-tunable phosphor for light-emitting diodes （LEDs） based on ultraviolet chip/phosphor technology.展开更多
We have synthesized Ca2Si5N8：Eu^2＋ phosphor through a solid-state reaction and investigated its structural and luminescent properties. Our Rietveld refinement of the crystal structure of Ca1.9Eu0.1Si5N8 reveals that...We have synthesized Ca2Si5N8：Eu^2＋ phosphor through a solid-state reaction and investigated its structural and luminescent properties. Our Rietveld refinement of the crystal structure of Ca1.9Eu0.1Si5N8 reveals that Eu atoms substituting for Ca atoms occupy two crystallographic positions. Between 10 K and 300 K, Ca2Si5N8：Eu^2＋ phosphor shows a broad red emission band centred at -1.97 eV-2.01 eV. The gravity centre of the excitation band is located at 3.0 eV 3.31 eV. The centroid shift of the 5d levels of Eu^2＋ is determined to be -1.17 eV, and the red-shift of the lowest absorption band to be - 0.54 eV due to the crystal field splitting. We have analysed the temperature dependence of PL by using a configuration coordinate model. The Huang-Rhys parameter S = 6.0, the phonon energy hv = 52 meV, and the Stokes shift △S = 0.57 eV are obtained. The emission intensity maximum occurring at -200 K can be explained by a trapping effect. Both photoluminescence （PL） emission intensity and decay time decrease with temperature increasing beyond 200 K due to the non-radiative process.展开更多
GaN-based irregular multiple quantum well （IMQW） structures assembled two different types of QWs emitting complementary wavelengths for dichromatic white light-emitting diodes （LEDs） are optimized in order to obta...GaN-based irregular multiple quantum well （IMQW） structures assembled two different types of QWs emitting complementary wavelengths for dichromatic white light-emitting diodes （LEDs） are optimized in order to obtain near white light emissions. The hole distributions and spontaneous emission spectra of the IMQW structures are analysed in detail by fully considering the effects of strain, well-coupling, valence band-mixing and polarization effect through employing a newly developed theoretical model from the k. p theory. Several structure parameters such as well material component, well width, layout of the wells and the thickness of harrier between different types of QWs are employed to analyse how these parameters together with the polarization effect influence the electronic and the optical properties of IMQW structure. Numerical results show that uniform hole distributions in different types of QWs are obtained when the number of the QWs emitting blue light is two, the number of the QWs emitting yellow light is one and the barrier between different types of QWs is 8nm in thickness. The near white light emission is realized using GaN-based IMQW structure with appropriate design parameters and injection level.展开更多
This paper synthesizes the Sr2SiO4：Eu^2＋ phosphor by high temperature solid-state reaction. The emission spectrum of Sr2SiO4 ： Eu^2＋ shows two bands centred at 480 and 547 nm, which agree well with the calculation...This paper synthesizes the Sr2SiO4：Eu^2＋ phosphor by high temperature solid-state reaction. The emission spectrum of Sr2SiO4 ： Eu^2＋ shows two bands centred at 480 and 547 nm, which agree well with the calculation values of emission spectrum, and the location of yellow emission of Sr2SiO4 ： Eu^2＋ is influenced by the Eu^2＋ concentration. The excitation spectrum for 547 nm emission has two bands at 363 and 402 nm. The emission spectrum of white light emitting diodes （w-LEDs） based on Sr2SiO4 ： Eu^2＋ phosphor ＋ InGaN LED was investigated.展开更多
A system with uniform light reflection in the inner surface within a horizontal 2/3 cylindrical structure for line-scan CCD of the print testing was designed. The design was based on diffuse reflection uniformity of t...A system with uniform light reflection in the inner surface within a horizontal 2/3 cylindrical structure for line-scan CCD of the print testing was designed. The design was based on diffuse reflection uniformity of the integrating sphere and requirement of the strip uniform illumination region. This system was called dome light. White light LED array light sources were used for uniform illumi- nation. The LEDs were filtrated to composite array light source based on coefficient of variation of a single LED. The standard white board and SG color checkers were used in the line-scan CCD imaging experiments under the dome light and ordinary illumination light source. The average color difference （AE） of SG color checkers in CIELAB space was 2. 091 under the dome light and 2. 286 under ordinary illumination light source respectively. Experimental results indicate that the dome light can satisfy illumination uniformity and color rendering consistency for line-scan CCD and provide a standard light source for uniform calibration of different cameras.展开更多
基金supported by Hebei Provincial Technology Development Foundation of China(Grant No 51215103b)Science Foundation of Hebei University of China(Grant No 2006Q06)
文摘This paper investigates the luminescence characteristics of Eu2＋ activated Ca2SiO4, Sr2SiO4 and Ba2SiO4 phosphors. Two emission bands are assigned to the f-d transitions of Eu2＋ ions doped into two different cation sites in host lattices, and show different emission colour variation caused by substituting M2＋ cations for smaller cations. This behaviour is discussed in terms of two competing factors of the crystal field strength and covalence. These phosphors with maximum excitation of around 370 nm can be applied as a colour-tunable phosphor for light-emitting diodes （LEDs） based on ultraviolet chip/phosphor technology.
基金supported by the National Natural Science Foundation of China (Grant No 50672007)Program for the New Century Excellent Talents of China (Grant No NCET-06-0082)the National Basic Research Program of China (Grant No2007CB936202)
文摘We have synthesized Ca2Si5N8：Eu^2＋ phosphor through a solid-state reaction and investigated its structural and luminescent properties. Our Rietveld refinement of the crystal structure of Ca1.9Eu0.1Si5N8 reveals that Eu atoms substituting for Ca atoms occupy two crystallographic positions. Between 10 K and 300 K, Ca2Si5N8：Eu^2＋ phosphor shows a broad red emission band centred at -1.97 eV-2.01 eV. The gravity centre of the excitation band is located at 3.0 eV 3.31 eV. The centroid shift of the 5d levels of Eu^2＋ is determined to be -1.17 eV, and the red-shift of the lowest absorption band to be - 0.54 eV due to the crystal field splitting. We have analysed the temperature dependence of PL by using a configuration coordinate model. The Huang-Rhys parameter S = 6.0, the phonon energy hv = 52 meV, and the Stokes shift △S = 0.57 eV are obtained. The emission intensity maximum occurring at -200 K can be explained by a trapping effect. Both photoluminescence （PL） emission intensity and decay time decrease with temperature increasing beyond 200 K due to the non-radiative process.
基金supported by the National Natural Science Foundation of China (Grant No. 60777013)the Nature Science Foundation of Beijing,China (Grant No. 4082023)the Excellent Doctoral Science and Technology Innovation Foundation of Beijing Jiaotong University,China (Grant No. 141063522)
文摘GaN-based irregular multiple quantum well （IMQW） structures assembled two different types of QWs emitting complementary wavelengths for dichromatic white light-emitting diodes （LEDs） are optimized in order to obtain near white light emissions. The hole distributions and spontaneous emission spectra of the IMQW structures are analysed in detail by fully considering the effects of strain, well-coupling, valence band-mixing and polarization effect through employing a newly developed theoretical model from the k. p theory. Several structure parameters such as well material component, well width, layout of the wells and the thickness of harrier between different types of QWs are employed to analyse how these parameters together with the polarization effect influence the electronic and the optical properties of IMQW structure. Numerical results show that uniform hole distributions in different types of QWs are obtained when the number of the QWs emitting blue light is two, the number of the QWs emitting yellow light is one and the barrier between different types of QWs is 8nm in thickness. The near white light emission is realized using GaN-based IMQW structure with appropriate design parameters and injection level.
基金Project supported by Hebei Provincial Technology Development Foundation of China(Grant No51215103b)
文摘This paper synthesizes the Sr2SiO4：Eu^2＋ phosphor by high temperature solid-state reaction. The emission spectrum of Sr2SiO4 ： Eu^2＋ shows two bands centred at 480 and 547 nm, which agree well with the calculation values of emission spectrum, and the location of yellow emission of Sr2SiO4 ： Eu^2＋ is influenced by the Eu^2＋ concentration. The excitation spectrum for 547 nm emission has two bands at 363 and 402 nm. The emission spectrum of white light emitting diodes （w-LEDs） based on Sr2SiO4 ： Eu^2＋ phosphor ＋ InGaN LED was investigated.
基金Supported by the National Natural Science Foundation of China(61078048)
文摘A system with uniform light reflection in the inner surface within a horizontal 2/3 cylindrical structure for line-scan CCD of the print testing was designed. The design was based on diffuse reflection uniformity of the integrating sphere and requirement of the strip uniform illumination region. This system was called dome light. White light LED array light sources were used for uniform illumi- nation. The LEDs were filtrated to composite array light source based on coefficient of variation of a single LED. The standard white board and SG color checkers were used in the line-scan CCD imaging experiments under the dome light and ordinary illumination light source. The average color difference （AE） of SG color checkers in CIELAB space was 2. 091 under the dome light and 2. 286 under ordinary illumination light source respectively. Experimental results indicate that the dome light can satisfy illumination uniformity and color rendering consistency for line-scan CCD and provide a standard light source for uniform calibration of different cameras.
