Nitrogen doping in chemical vapor deposition-derived ultrananocrystalline diamond(UNCD)films in-creases the electronic conductivity,yet its microstructural effects on electron transport are insufficiently understood.W...Nitrogen doping in chemical vapor deposition-derived ultrananocrystalline diamond(UNCD)films in-creases the electronic conductivity,yet its microstructural effects on electron transport are insufficiently understood.We investigated the formation of nitrogen-induced diaph-ite structures(hybrid diamond-graphite phases)and their role in changing the conductivity.Nitrogen doping in a hy-drogen-rich plasma environment promotes the emergence of unique sp^(3)-sp^(2)bonding interfaces,where diamond grains are covalently integrated with graphitic domains,facilitating a structure-driven electronic transition.High-resolution transmis-sion electron microscopy and selected area electron diffraction reveal five-fold,six-fold and twelve-fold symmetries,along with an atypical{200}crystallographic reflection,confirming diaphite formation in 5%and 10%N-doped UNCD films,while high-er doping levels(15%and 20%)result in extensive graphitization.Raman spectroscopy tracks the evolution of sp^(2)bonding with increasing nitrogen content,while atomic force microscopy and X-ray diffraction indicate a consistent diamond grain size of~8 nm.Cryogenic electronic transport measurements reveal a conductivity increase from 8.72 to 708 S/cm as the nitrogen dop-ing level increases from 5%to 20%,which is attributed to defect-mediated carrier transport and 3D weak localization.The res-ulting conductivity is three orders of magnitude higher than previously reported.These findings establish a direct correlation between diaphite structural polymorphism and tunable electronic properties in nitrogen-doped UNCD films,offering new ways for defect-engineering diamond-based electronic materials.展开更多
随着新能源装机容量和渗透率的增加,电网逐渐呈现出较大等效电网阻抗的弱电网特性,此时常规强电网下设计的并网逆变器比例-积分(PI)参数往往会引起系统谐振等不稳定问题。针对弱电网下如何优化设计并网逆变器PI参数的问题,常规方法往往...随着新能源装机容量和渗透率的增加,电网逐渐呈现出较大等效电网阻抗的弱电网特性,此时常规强电网下设计的并网逆变器比例-积分(PI)参数往往会引起系统谐振等不稳定问题。针对弱电网下如何优化设计并网逆变器PI参数的问题,常规方法往往需要近似处理或反复试凑,而且无法结合多个性能指标进行参数整定。因此,文中基于D分割法得到了弱电网下的并网逆变器同时满足相角裕度、幅值裕度、电流环带宽和短路比等多性能指标下的PI参数稳定域,并通过图形可视化地表现出来,从而快速、准确地获取弱电网下的PI参数,避免了反复试凑。最后,得出了弱电网下的并网逆变器即使将锁相环带宽设置得很低,其PI参数也需要合理进行设计和选取才能使其稳定、高效运行的结论,并基于30 k W实验平台验证了该设计方法和结论的正确性。展开更多
文摘Nitrogen doping in chemical vapor deposition-derived ultrananocrystalline diamond(UNCD)films in-creases the electronic conductivity,yet its microstructural effects on electron transport are insufficiently understood.We investigated the formation of nitrogen-induced diaph-ite structures(hybrid diamond-graphite phases)and their role in changing the conductivity.Nitrogen doping in a hy-drogen-rich plasma environment promotes the emergence of unique sp^(3)-sp^(2)bonding interfaces,where diamond grains are covalently integrated with graphitic domains,facilitating a structure-driven electronic transition.High-resolution transmis-sion electron microscopy and selected area electron diffraction reveal five-fold,six-fold and twelve-fold symmetries,along with an atypical{200}crystallographic reflection,confirming diaphite formation in 5%and 10%N-doped UNCD films,while high-er doping levels(15%and 20%)result in extensive graphitization.Raman spectroscopy tracks the evolution of sp^(2)bonding with increasing nitrogen content,while atomic force microscopy and X-ray diffraction indicate a consistent diamond grain size of~8 nm.Cryogenic electronic transport measurements reveal a conductivity increase from 8.72 to 708 S/cm as the nitrogen dop-ing level increases from 5%to 20%,which is attributed to defect-mediated carrier transport and 3D weak localization.The res-ulting conductivity is three orders of magnitude higher than previously reported.These findings establish a direct correlation between diaphite structural polymorphism and tunable electronic properties in nitrogen-doped UNCD films,offering new ways for defect-engineering diamond-based electronic materials.
文摘随着新能源装机容量和渗透率的增加,电网逐渐呈现出较大等效电网阻抗的弱电网特性,此时常规强电网下设计的并网逆变器比例-积分(PI)参数往往会引起系统谐振等不稳定问题。针对弱电网下如何优化设计并网逆变器PI参数的问题,常规方法往往需要近似处理或反复试凑,而且无法结合多个性能指标进行参数整定。因此,文中基于D分割法得到了弱电网下的并网逆变器同时满足相角裕度、幅值裕度、电流环带宽和短路比等多性能指标下的PI参数稳定域,并通过图形可视化地表现出来,从而快速、准确地获取弱电网下的PI参数,避免了反复试凑。最后,得出了弱电网下的并网逆变器即使将锁相环带宽设置得很低,其PI参数也需要合理进行设计和选取才能使其稳定、高效运行的结论,并基于30 k W实验平台验证了该设计方法和结论的正确性。
