A pocket coherent population trapping（CPT） atomic magnetometer scheme that uses a vertical cavity surface emitting laser as a light source is proposed and experimentally investigated.Using the differential detecting...A pocket coherent population trapping（CPT） atomic magnetometer scheme that uses a vertical cavity surface emitting laser as a light source is proposed and experimentally investigated.Using the differential detecting magneto–optic rotation effect,a CPT spectrum with the background canceled and a high signal-to-noise ratio is obtained.The experimental results reveal that the sensitivity of the proposed scheme can be improved by half an order,and the ability to detect weak magnetic fields is extended one-fold.Therefore,the proposed scheme is suited to realize a pocket-size CPT magnetometer.展开更多
In this paper, two-dimensional （2D） transient simulations of an A1GaN/GaN high-electron-mobility transistor （HEMT） are carded out and analyzed to investigate the current collapse due to trapping effects. The coupl...In this paper, two-dimensional （2D） transient simulations of an A1GaN/GaN high-electron-mobility transistor （HEMT） are carded out and analyzed to investigate the current collapse due to trapping effects. The coupling effect of the trapping and thermal effects are taken into account in our simulation. The turn-on pulse gate-lag transient responses with different quiescent biases are obtained, and the pulsed current-voltage （l-V） curves are extracted from the transients. The experimental results of both gate-lag transient current and pulsed I-V curves are reproduced by the simulation, and the current collapse due to the trapping effect is explained from the view of physics based on the simulation results. In addition, the results show that bulk acceptor traps can influence the gate-lag transient characteristics of A1GaN/GaN HEMTs besides surface traps and that the thermal effect can accelerate the emission of captured electrons for traps. Pulse transient simulation is meaningful in analyzing the mechanism of dynamic current collapse, and the work in this paper will benefit the reliability study and model development of GaN-based devices.展开更多
In the microwave 199Hg＋ trapped-ion clock, the frequency instability degradation caused by the Dick effect is un- avoidable because of the periodical interrogating field. In this paper, the general expression of the ...In the microwave 199Hg＋ trapped-ion clock, the frequency instability degradation caused by the Dick effect is un- avoidable because of the periodical interrogating field. In this paper, the general expression of the sensitivity function g（t） to the frequency fluctuation of the interrogating field with Nπ-pulse （N is odd） is derived. According to the measured phase noise of the 40.5-GHz microwave synthesizer, the Dick-effect limited Allan deviation of our 199Hg＋ trapped-ion clock is worked out. The results indicate that the limited Allan deviations are about 1.75 ×10-13/√τ and 3.03 ×10-13/√τ respectively in the linear ion trap and in the two-segment extended linear ion trap under our present experimental parameters.展开更多
The effects of trapped electrons on off-axis lower hybrid current drive （LHCD） in tokamaks are studied, A computer code for solving the Fokker-Planck equation in a toroidal geometry is developed and employed. The co...The effects of trapped electrons on off-axis lower hybrid current drive （LHCD） in tokamaks are studied, A computer code for solving the Fokker-Planck equation in a toroidal geometry is developed and employed. The code is suitable for various auxiliary heating and current drive schemes in tokamak plasmas. The influence of the resonance regime on the current drive efficiency as well as the influence of trapped particle fraction on the current drive efficiency are emphasized. It is shown that, as an electrostatic force, the lower hybrid wave causes some of the trapped electrons to be untrapped and lose their energy, which can cut the LHCD efficiency by about 30%. The ITER scaling law is also used to estimate the trapped electron effects.展开更多
A two-dimensional electrical SiC MOS interface model including interface and near-interface traps is established based on the relevant tunneling and interface Shockley–Read–Hall model. The consistency between simula...A two-dimensional electrical SiC MOS interface model including interface and near-interface traps is established based on the relevant tunneling and interface Shockley–Read–Hall model. The consistency between simulation results and measured data in the different temperatures shows that this interface model can accurately describe the capture and emission performance for near-interface oxide traps, and can well explain the hysteresis-voltage response with increasing temperature, which is intensified by the interaction between deep oxide traps and shallow oxide traps. This also indicates that the near-interface traps result in an increase of threshold-voltage shift in SiC MOSFET with increasing temperature.展开更多
We experimentally demonstrate the quantum anti-Zeno effect in a two-level system based on a single trapped ion ^（40）Ca~＋. In the large detuning regime, we show that the transfer from the ground state to the excited...We experimentally demonstrate the quantum anti-Zeno effect in a two-level system based on a single trapped ion ^（40）Ca~＋. In the large detuning regime, we show that the transfer from the ground state to the excited state can be remarkably enhanced by the inserted projection measurements. The inserted measurements in our experiment are realized by the electron shelving technique. Compared to the ideal projection measurement, which makes the quantum state collapse instantaneously, a practical electron shelving process needs a finite time duration. The minimum time for this collapse process is shown to be inversely proportional to the square of the coupling strength between the measurement laser and the system.展开更多
Trap-assisted tunneling（TAT） has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor（TFET）. In this paper, we assess subthreshold perf...Trap-assisted tunneling（TAT） has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor（TFET）. In this paper, we assess subthreshold performance of double gate TFET（DG-TFET） through a band-to-band tunneling（BTBT） model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile（D_（it）） and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current.展开更多
For most pulsed atomic clocks, the Dick effect is one of the main limits to reach its frequency stability limitation due to quantum projection noise. In this paper, we measure the phase noise of the local oscillator i...For most pulsed atomic clocks, the Dick effect is one of the main limits to reach its frequency stability limitation due to quantum projection noise. In this paper, we measure the phase noise of the local oscillator in the Ramsey-CPT atomic clock and calculate the Dick effect induced Allan deviation based on a three-level atomic model, which is quite different from typical atomic clocks. We further present a detailed analysis of optimizing the sensitivity function and minimizing the Dick effect by interleaving lock. By optimizing the duty circle of laser pulses, average time during detection and optical intensity of laser beam, the Dick effect induced Allan deviation can be reduced to the level of 10 14.展开更多
This paper investigates the effects of gamma-ray irradiation on the Shallow-Trench Isolation （STI） leakage currents in 180-nm complementary metal oxide semiconductor technology. No hump effect in the subthreshold re...This paper investigates the effects of gamma-ray irradiation on the Shallow-Trench Isolation （STI） leakage currents in 180-nm complementary metal oxide semiconductor technology. No hump effect in the subthreshold region is observed after irradiation, which is considered to be due to the thin STI corner oxide thickness. A negative substrate bias could effectively suppress the STI leakage, but it also impairs the device characteristics. The three-dimensional simulation is introduced to understand the impact of substrate bias, Moreover, we propose a simple method for extracting the best substrate bias value, which not only eliminates the STI leakage but also has the least impact on the device characteristics.展开更多
The current voltage （IV） characteristics are greatly influenced by the dispersion effects in A1GaN/CaN high electron mobility transistors. The direct current （DC） IV and pulsed IV measurements are performed to giv...The current voltage （IV） characteristics are greatly influenced by the dispersion effects in A1GaN/CaN high electron mobility transistors. The direct current （DC） IV and pulsed IV measurements are performed to give a deep investigation into the dispersion effects, which are mainly related to the trap and self-heating mechanisms. The results show that traps play an important role in the kink effects, and high stress can introduce more traps and defects in the device. With the help of the pulsed IV measurements, the trapping effects and self-heating effects can be separated. The impact of time constants on the dispersion effects is also discussed. In order to achieve an accurate static DC IV measurement, the steady state of the bias points must be considered carefully to avoid the dispersion effects.展开更多
Input/output devices for flash memory are exposed to gamma ray irradiation. Total ionizing dose has been shown great influence on characteristic degradation of transistors with different sizes. In this paper, we obser...Input/output devices for flash memory are exposed to gamma ray irradiation. Total ionizing dose has been shown great influence on characteristic degradation of transistors with different sizes. In this paper, we observed a larger increase of off-state leakage in the short channel device than in long one. However, a larger threshold voltage shift is observed for the narrow width device than for the wide one, which is well known as the radiation induced narrow channel effect. The radiation induced charge in the shallow trench isolation oxide influences the electric field of the narrow channel device. Also, the drain bias dependence of the off-state leakage after irradiation is observed, which is called the radiation enhanced drain induced barrier lowing effect. Finally, we found that substrate bias voltage can suppress the off-state leakage, while leading to more obvious hump effect.展开更多
当前,氮化镓(gallium nitride,GaN)高电子迁移率晶体管(high electron mobility transistors,HEMTs)器件已逐渐被广泛应用。然而,退化问题仍然是困扰其高可靠应用的重要因素。特别是开态应力下,器件的退化机理值得深入研究。文章基于实...当前,氮化镓(gallium nitride,GaN)高电子迁移率晶体管(high electron mobility transistors,HEMTs)器件已逐渐被广泛应用。然而,退化问题仍然是困扰其高可靠应用的重要因素。特别是开态应力下,器件的退化机理值得深入研究。文章基于实验测试及仿真,重点研究了氮化镓射频HEMT器件在开态应力下的退化现象与机理。研究结果表明,单一的高漏压应力并不会对器件带来明显退化,而高漏压与大的漏极电流结合则会对器件产生明显退化,这一影响重点集中在栅极与漏极之间的有源区。需要注意的是,栅极偏置电压在沟道电子进入栅下区域的过程中也起到了重要作用。开态应力下,栅极偏压形成的垂直电场会使得器件栅下区域损伤更加严重。文章的研究成果可以为氮化镓射频器件在复杂环境下的高可靠性应用提供重要支撑。展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11304362 and 61434005)
文摘A pocket coherent population trapping（CPT） atomic magnetometer scheme that uses a vertical cavity surface emitting laser as a light source is proposed and experimentally investigated.Using the differential detecting magneto–optic rotation effect,a CPT spectrum with the background canceled and a high signal-to-noise ratio is obtained.The experimental results reveal that the sensitivity of the proposed scheme can be improved by half an order,and the ability to detect weak magnetic fields is extended one-fold.Therefore,the proposed scheme is suited to realize a pocket-size CPT magnetometer.
基金Project supported by the National Natural Science Foundation of China(Grant No.61306113)
文摘In this paper, two-dimensional （2D） transient simulations of an A1GaN/GaN high-electron-mobility transistor （HEMT） are carded out and analyzed to investigate the current collapse due to trapping effects. The coupling effect of the trapping and thermal effects are taken into account in our simulation. The turn-on pulse gate-lag transient responses with different quiescent biases are obtained, and the pulsed current-voltage （l-V） curves are extracted from the transients. The experimental results of both gate-lag transient current and pulsed I-V curves are reproduced by the simulation, and the current collapse due to the trapping effect is explained from the view of physics based on the simulation results. In addition, the results show that bulk acceptor traps can influence the gate-lag transient characteristics of A1GaN/GaN HEMTs besides surface traps and that the thermal effect can accelerate the emission of captured electrons for traps. Pulse transient simulation is meaningful in analyzing the mechanism of dynamic current collapse, and the work in this paper will benefit the reliability study and model development of GaN-based devices.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11074248 and 11474320)
文摘In the microwave 199Hg＋ trapped-ion clock, the frequency instability degradation caused by the Dick effect is un- avoidable because of the periodical interrogating field. In this paper, the general expression of the sensitivity function g（t） to the frequency fluctuation of the interrogating field with Nπ-pulse （N is odd） is derived. According to the measured phase noise of the 40.5-GHz microwave synthesizer, the Dick-effect limited Allan deviation of our 199Hg＋ trapped-ion clock is worked out. The results indicate that the limited Allan deviations are about 1.75 ×10-13/√τ and 3.03 ×10-13/√τ respectively in the linear ion trap and in the two-segment extended linear ion trap under our present experimental parameters.
基金Project supported by the National Natural Science Foundation of China （Grant Nos 10675043, 10575031 and 10675042）.
文摘The effects of trapped electrons on off-axis lower hybrid current drive （LHCD） in tokamaks are studied, A computer code for solving the Fokker-Planck equation in a toroidal geometry is developed and employed. The code is suitable for various auxiliary heating and current drive schemes in tokamak plasmas. The influence of the resonance regime on the current drive efficiency as well as the influence of trapped particle fraction on the current drive efficiency are emphasized. It is shown that, as an electrostatic force, the lower hybrid wave causes some of the trapped electrons to be untrapped and lose their energy, which can cut the LHCD efficiency by about 30%. The ITER scaling law is also used to estimate the trapped electron effects.
基金Supported by the Science Challenge Project under Grant No TZ2018003
文摘A two-dimensional electrical SiC MOS interface model including interface and near-interface traps is established based on the relevant tunneling and interface Shockley–Read–Hall model. The consistency between simulation results and measured data in the different temperatures shows that this interface model can accurately describe the capture and emission performance for near-interface oxide traps, and can well explain the hysteresis-voltage response with increasing temperature, which is intensified by the interaction between deep oxide traps and shallow oxide traps. This also indicates that the near-interface traps result in an increase of threshold-voltage shift in SiC MOSFET with increasing temperature.
基金Project supported by the National Basic Research Program of China(Grant No.2016YFA0301903)the National Natural Science Foundation of China(Grant Nos.11174370,11304387,61632021,11305262,11574398,and N 61205108)the Research Plan Project of National University of Defense Technology,China(Grant No.ZK16-03-04)
文摘We experimentally demonstrate the quantum anti-Zeno effect in a two-level system based on a single trapped ion ^（40）Ca~＋. In the large detuning regime, we show that the transfer from the ground state to the excited state can be remarkably enhanced by the inserted projection measurements. The inserted measurements in our experiment are realized by the electron shelving technique. Compared to the ideal projection measurement, which makes the quantum state collapse instantaneously, a practical electron shelving process needs a finite time duration. The minimum time for this collapse process is shown to be inversely proportional to the square of the coupling strength between the measurement laser and the system.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61574109 and 61204092)
文摘Trap-assisted tunneling（TAT） has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor（TFET）. In this paper, we assess subthreshold performance of double gate TFET（DG-TFET） through a band-to-band tunneling（BTBT） model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile（D_（it）） and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current.
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFA0302101)the Initiative Program of State Key Laboratory of Precision Measurement Technology and Instruments
文摘For most pulsed atomic clocks, the Dick effect is one of the main limits to reach its frequency stability limitation due to quantum projection noise. In this paper, we measure the phase noise of the local oscillator in the Ramsey-CPT atomic clock and calculate the Dick effect induced Allan deviation based on a three-level atomic model, which is quite different from typical atomic clocks. We further present a detailed analysis of optimizing the sensitivity function and minimizing the Dick effect by interleaving lock. By optimizing the duty circle of laser pulses, average time during detection and optical intensity of laser beam, the Dick effect induced Allan deviation can be reduced to the level of 10 14.
文摘This paper investigates the effects of gamma-ray irradiation on the Shallow-Trench Isolation （STI） leakage currents in 180-nm complementary metal oxide semiconductor technology. No hump effect in the subthreshold region is observed after irradiation, which is considered to be due to the thin STI corner oxide thickness. A negative substrate bias could effectively suppress the STI leakage, but it also impairs the device characteristics. The three-dimensional simulation is introduced to understand the impact of substrate bias, Moreover, we propose a simple method for extracting the best substrate bias value, which not only eliminates the STI leakage but also has the least impact on the device characteristics.
基金Project supported by the National Basic Research Program of China (Grant No.2010CB327503)the National Natural Science Foundation of China (Grant No.60890191)
文摘The current voltage （IV） characteristics are greatly influenced by the dispersion effects in A1GaN/CaN high electron mobility transistors. The direct current （DC） IV and pulsed IV measurements are performed to give a deep investigation into the dispersion effects, which are mainly related to the trap and self-heating mechanisms. The results show that traps play an important role in the kink effects, and high stress can introduce more traps and defects in the device. With the help of the pulsed IV measurements, the trapping effects and self-heating effects can be separated. The impact of time constants on the dispersion effects is also discussed. In order to achieve an accurate static DC IV measurement, the steady state of the bias points must be considered carefully to avoid the dispersion effects.
文摘Input/output devices for flash memory are exposed to gamma ray irradiation. Total ionizing dose has been shown great influence on characteristic degradation of transistors with different sizes. In this paper, we observed a larger increase of off-state leakage in the short channel device than in long one. However, a larger threshold voltage shift is observed for the narrow width device than for the wide one, which is well known as the radiation induced narrow channel effect. The radiation induced charge in the shallow trench isolation oxide influences the electric field of the narrow channel device. Also, the drain bias dependence of the off-state leakage after irradiation is observed, which is called the radiation enhanced drain induced barrier lowing effect. Finally, we found that substrate bias voltage can suppress the off-state leakage, while leading to more obvious hump effect.
文摘当前,氮化镓(gallium nitride,GaN)高电子迁移率晶体管(high electron mobility transistors,HEMTs)器件已逐渐被广泛应用。然而,退化问题仍然是困扰其高可靠应用的重要因素。特别是开态应力下,器件的退化机理值得深入研究。文章基于实验测试及仿真,重点研究了氮化镓射频HEMT器件在开态应力下的退化现象与机理。研究结果表明,单一的高漏压应力并不会对器件带来明显退化,而高漏压与大的漏极电流结合则会对器件产生明显退化,这一影响重点集中在栅极与漏极之间的有源区。需要注意的是,栅极偏置电压在沟道电子进入栅下区域的过程中也起到了重要作用。开态应力下,栅极偏压形成的垂直电场会使得器件栅下区域损伤更加严重。文章的研究成果可以为氮化镓射频器件在复杂环境下的高可靠性应用提供重要支撑。
