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Effects of the oxygen transport properties of electrolytes on the reaction mechanisms in lithium-oxygen batteries
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作者 Aijing Yan Zhuojun Zhang +1 位作者 Xu Xiao Peng Tan 《中国科学技术大学学报》 北大核心 2025年第2期35-42,34,I0001,I0002,共11页
Lithium-oxygen batteries attract considerable attention due to exceptionally high theoretical energy density,while the development remains in its early stage.As is widely suggested,the solution mechanism induces great... Lithium-oxygen batteries attract considerable attention due to exceptionally high theoretical energy density,while the development remains in its early stage.As is widely suggested,the solution mechanism induces greater discharge capacity,while the surface mechanism induces greater cycle stability.Therefore,battery performance can be improved by adjusting the reaction mechanism.Previous studies predominantly focus on extremely thin or flat electrodes.In contrast,this work utilizes thick electrodes,emphasizing the importance of mass transport.Given that the electrolyte solvent is the main site of mass transport,the effects of two typical solvents on mass transport and battery performance are investigated:dimethyl sulfoxide with low viscosity and a high O_(2) diffusion rate and tetraethylene glycol dimethyl ether with high O_(2) solubility and high Li+transport capability.The results reveal a novel pathway for reaction mechanism induction where the mechanism varies with the spatial position of the electrode.As the spatial distribution of the electrode progresses,a layered appearance of solution mechanism products,transition state products,and surface mechanism products emerges,which is attributed to the increase in the mass transfer resistance.This work presents a distinct perspective on the way solvents influence reaction pathways and offers a new approach to regulating reaction pathways. 展开更多
关键词 Li-O_(2)battery nonaqueous electrolyte oxygen transport property solution mechanism surface mechanism
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Inverse Stone-Thrower-Wales defect and transport properties of 9AGNR double-gate graphene nanoribbon FETs
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作者 Mohammad Bagher NASROLLAHNEJAD Parviz KESHAVARZI 《Journal of Central South University》 SCIE EI CAS CSCD 2019年第11期2943-2952,共10页
Defect-based engineering of carbon nanostructures is becoming an important and powerful method to modify the electron transport properties in graphene nanoribbon FETs. In this paper, the impact of the position and sym... Defect-based engineering of carbon nanostructures is becoming an important and powerful method to modify the electron transport properties in graphene nanoribbon FETs. In this paper, the impact of the position and symmetry of the ISTW defect on the performance of low dimensional 9AGNR double-gate graphene nanoribbon FET (DG-GNRFET) is investigated. Analyzing the transmission spectra, density of states and current-voltage characteristics shows that the defect effect on the electron transport is considerably varied depending on the positions and the orientations (the symmetric and asymmetric configuration) of the ISTW defect in the channel length. Based on the results, the asymmetric ISTW defect leads to a more controllability of the gate voltages over drain current, and drain current increases more than 5 times. The results have also con rmed the ISTW defect engineering potential on controlling the channel electrical current of DG-AGNR FET. 展开更多
关键词 inverse Stone-Thrower-Wales defect electronic transport properties graphene nanoribbon tight binding NEGF formalism
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Effects of thermal transport properties on temperature distribution within silicon wafer
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作者 王爱华 牛义红 +1 位作者 陈铁军 P.F.HSU 《Journal of Central South University》 SCIE EI CAS 2014年第4期1402-1410,共9页
A combined conduction and radiation heat transfer model was used to simulate the heat transfer within wafer and investigate the effect of thermal transport properties on temperature non-uniformity within wafer surface... A combined conduction and radiation heat transfer model was used to simulate the heat transfer within wafer and investigate the effect of thermal transport properties on temperature non-uniformity within wafer surface. It is found that the increased conductivities in both doped and undoped regions help reduce the temperature difference across the wafer surface. However, the doped layer conductivity has little effect on the overall temperature distribution and difference. The temperature level and difference on the top surface drop suddenly when absorption coefficient changes from 104 to 103 m-1. When the absorption coefficient is less or equal to 103 m-1, the temperature level and difference do not change much. The emissivity has the dominant effect on the top surface temperature level and difference. Higher surface emissivity can easily increase the temperature level of the wafer surface. After using the improved property data, the overall temperature level reduces by about 200 K from the basis case. The results will help improve the current understanding of the energy transport in the rapid thermal processing and the wafer temperature monitor and control level. 展开更多
关键词 silicon wafer thermal transport properties temperature distribution radiation heat transfer
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Effect of boron/nitrogen co-doping on transport properties of C60 molecular devices
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作者 伍晓赞 黄光辉 +1 位作者 陶庆斌 徐慧 《Journal of Central South University》 SCIE EI CAS 2013年第4期889-893,共5页
By using nonequilibrium Green's function method and first-principles calculations, the electronic transport properties of doped C60 molecular devices were investigated. It is revealed that the C60 molecular devices s... By using nonequilibrium Green's function method and first-principles calculations, the electronic transport properties of doped C60 molecular devices were investigated. It is revealed that the C60 molecular devices show the metal behavior due to the interaction between the C60 molecule and the metal electrode. The current-voltage curve displays a linear behavior at low bias, and the currents have the relation of MI〉M3〉M4〉M2 when the bias voltage is lower than 0.6 V. Electronic transport properties are affected greatly by the doped atoms. Negative differential resistance is found in a certain bias range for C60 and C58BN molecular devices, but cannot be observed in C59B and C59N molecular devices. These unconventional effects can be used to design novel nanoelectronic devices. 展开更多
关键词 negative differential resistance molecular device electronic transport property first-principles calculation
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Ion-transport characteristics of new-old concrete composite system 被引量:5
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作者 龙广成 谢友均 +1 位作者 丁巍巍 Ahmed OMRAN 《Journal of Central South University》 SCIE EI CAS 2014年第2期790-798,共9页
New-old concrete composite system usually exists in concrete repairing structure.In the present work,series of experiments were carried out to investigate permeability and ion diffusion properties of new-old concrete ... New-old concrete composite system usually exists in concrete repairing structure.In the present work,series of experiments were carried out to investigate permeability and ion diffusion properties of new-old concrete composite by measuring 6-hour coulomb charge and chloride diffusivity.The interrelation among transport properties of new-old composites,new,and old concretes was also discussed.Results indicate that the permeability and chloride diffusivity of new-old concrete composite system closely interrelate to the corresponding new concrete and old concrete.The interfacial transition zone between new concrete and old concrete greatly influences the transport property of new-old concrete system.Compared with the corresponding new concrete and old concrete lower permeability and diffusivity values for the new-old concrete composites can be achieved by choosing suitable new concrete.It is possible to design the tailor-made new-old concrete composite system for repair given the transport property. 展开更多
关键词 new-old concrete composite chloride diffusivity PERMEABILITY transport property
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Beam Measurement System in NSRL 被引量:4
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作者 Sun, Baogen Lu, Ping +2 位作者 Wang, Junhua Fang, Zhigao Liu, Jianhong 《Journal of Systems Engineering and Electronics》 SCIE EI CSCD 2000年第3期9-13,共5页
This paper describes the beam measurement system for the accelerator of the National Synchrotron Radiation Laboratory (NSRL). The design considerations of the beam measurement instrumentation system for the NSRL are a... This paper describes the beam measurement system for the accelerator of the National Synchrotron Radiation Laboratory (NSRL). The design considerations of the beam measurement instrumentation system for the NSRL are aided by the commissioning of the machine and provide sufficient machine parameters for machine study as well as the common operation. The beam measurement system includes the part for the linac and transport line and the part for the storage ring. The measurement results are presented in the paper. 展开更多
关键词 Fluorescent screens Parameter estimation Synchrotron radiation transport properties
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Negative differential resistance behavior in doped C_(82) molecular devices
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作者 徐慧 贾姝婷 陈灵娜 《Journal of Central South University》 SCIE EI CAS 2012年第2期299-303,共5页
By using the first-principle calculations and nonequilibrium Green functions method, the electronic transport properties of molecular devices constructed by C82, C80BN and C80N2 were studied. The results show that the... By using the first-principle calculations and nonequilibrium Green functions method, the electronic transport properties of molecular devices constructed by C82, C80BN and C80N2 were studied. The results show that the electronic transport properties of molecular devices are affected by doped atoms. Negative differential resistance (NDR) behavior can be observed in certain bias regions for C82 and C80BN molecular devices but cannot be observed for C80N2 molecular device. A mechanism for the negative differential resistance behavior was suggested. 展开更多
关键词 electronic transport properties negative differential resistance FIRST-PRINCIPLE molecular device
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