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Recent Progress in KTiOPO_(4) Crystal Research
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作者 Liu Yaogang Wei Jinqian +3 位作者 Wang Jiyang Chen Fushen Han Jianru Jiang Minhua 《人工晶体学报》 CSCD 1991年第3期302-302,共1页
The influences of vatious growth conditions on KTP crystal quality were stutied.According to the results obtained,We have improved the growth technology.Now high quality and large size(up to 29×73×58mm,180g)... The influences of vatious growth conditions on KTP crystal quality were stutied.According to the results obtained,We have improved the growth technology.Now high quality and large size(up to 29×73×58mm,180g)KTP crystal can be grown steadily.The rusults of tests using SHG devices made of this crystal both home and abroad have shown that the conversion efficiency reaehes 74%(Peak value reaches86%)and the damage threshold is higher than 1GW/cm^(2). 展开更多
关键词 improved growth technologynow temperature shg devices crystal growth KTPO damage threshold conversion efficiency CONCENTRATION
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