Perovskite light emitting diodes(PeLEDs)have attracted considerable research attention because of their external quantum efficiency(EQE)of>20%and have potential scope for further improvement.However,compared to red...Perovskite light emitting diodes(PeLEDs)have attracted considerable research attention because of their external quantum efficiency(EQE)of>20%and have potential scope for further improvement.However,compared to red and green PeLEDs,blue PeLEDs have not been extensively investigated,which limits their commercial applications in the fields of luminance and full-color displays.In this review,blue-PeLED-related research is categorized by the composition of perovskite.The main challenges and corresponding optimization strategies for perovskite films are summarized.Next,the novel strategies for the design of device structures of blue PeLEDs are reviewed from the perspective of transport layers and interfacial layers.Accordingly,future directions for blue PeLEDs are discussed.This review can be a guideline for optimizing perovskite film and device structure of blue PeLEDs,thereby enhancing their development and application scope.展开更多
We have synthesized Ca2Si5N8：Eu^2＋ phosphor through a solid-state reaction and investigated its structural and luminescent properties. Our Rietveld refinement of the crystal structure of Ca1.9Eu0.1Si5N8 reveals that...We have synthesized Ca2Si5N8：Eu^2＋ phosphor through a solid-state reaction and investigated its structural and luminescent properties. Our Rietveld refinement of the crystal structure of Ca1.9Eu0.1Si5N8 reveals that Eu atoms substituting for Ca atoms occupy two crystallographic positions. Between 10 K and 300 K, Ca2Si5N8：Eu^2＋ phosphor shows a broad red emission band centred at -1.97 eV-2.01 eV. The gravity centre of the excitation band is located at 3.0 eV 3.31 eV. The centroid shift of the 5d levels of Eu^2＋ is determined to be -1.17 eV, and the red-shift of the lowest absorption band to be - 0.54 eV due to the crystal field splitting. We have analysed the temperature dependence of PL by using a configuration coordinate model. The Huang-Rhys parameter S = 6.0, the phonon energy hv = 52 meV, and the Stokes shift △S = 0.57 eV are obtained. The emission intensity maximum occurring at -200 K can be explained by a trapping effect. Both photoluminescence （PL） emission intensity and decay time decrease with temperature increasing beyond 200 K due to the non-radiative process.展开更多
While considerable research has been conducted on the structural principles,fabrication techniques,and photoelectric properties of high-voltage light-emitting diodes(LEDs),their performance in light communication rema...While considerable research has been conducted on the structural principles,fabrication techniques,and photoelectric properties of high-voltage light-emitting diodes(LEDs),their performance in light communication remains underexplored.A high-voltage seriesconnected LED or photodetector(HVS-LED/PD)based on the gallium nitride(GaN)integrated photoelectronic chip is presented in this paper.Multi-quantum wells(MQW)diodes with identical structures are integrated onto a single chip through wafer-scale micro-fabrication techniques and connected in series to construct the HVS-LED/PD.The advantages of the HVS-LED/PD in communication are explored by testing its performance as both a light transmitter and a PD.The series connection enhances the device's 3 dB bandwidth,allowing it to increase from 1.56 MHz to a minimum of 2.16 MHz when functioning as an LED,and from 47.42 kHz to at least 85.83 kHz when operating as a PD.The results demonstrate that the light communication performance of HVS-LED/PD is better than that of a single GaN MQW diode with bandwidth and transmission quantity,which enriches the research of GaN-based high-voltage devices.展开更多
Blue InGaN light-emitting diodes （LEDs） with a conventional electron blocking layer （EBL）, a common n-A1GaN hole blocking layer （HBL）, and an n-A1GaN HBL with gradual A1 composition are investigated numerically,...Blue InGaN light-emitting diodes （LEDs） with a conventional electron blocking layer （EBL）, a common n-A1GaN hole blocking layer （HBL）, and an n-A1GaN HBL with gradual A1 composition are investigated numerically, which involves analyses of the carrier concentration in the active region, energy band diagram, electrostatic field, and internal quantum efficiency （IQE）. The results indicate that LEDs with an n-AIGaN HBL with gradual AI composition exhibit better hole injection efficiency, lower electron leakage, and a smaller electrostatic field in the active region than LEDs with a conven tional p-A1GaN EBL or a common n-A1GaN HBL. Meanwhile, the efficiency droop is alleviated when an n-A1GaN HBL with gradual A1 composition is used.展开更多
The novel AlGaN-based ultraviolet light-emitting diodes(UV-LEDs) with double superlattice structure(DSL) are proposed and demonstrated by numerical simulation and experimental verification. The DSL consists of 30-peri...The novel AlGaN-based ultraviolet light-emitting diodes(UV-LEDs) with double superlattice structure(DSL) are proposed and demonstrated by numerical simulation and experimental verification. The DSL consists of 30-period Mg modulation-doped p-AlGaN/u-GaN superlattice(SL) and 4-period p-AlGaN/p-GaN SL electron blocking layer, which are used to replace the p-type GaN layer and electron blocking layer of conventional UV-LEDs, respectively. Due to the special effects and interfacial stress, the AlGaN/GaN short-period superlattice can reduce the acceptor ionization energy of the ptype regions, thereby increasing the hole concentration. Meanwhile, the multi-barrier electron blocking layers are effective in suppressing electron leakage and improving hole injection. Experimental results show that the enhancements of 22.5%and 37.9% in the output power and external quantum efficiency at 120 m A appear in the device with double superlattice structure.展开更多
A new method for patterned sapphire substrate （PSS） design is developed and proven to be reliable and cost-effective. As progress is made with LEDs＇ luminous efficiency, the pattern units of PSS become more complic...A new method for patterned sapphire substrate （PSS） design is developed and proven to be reliable and cost-effective. As progress is made with LEDs＇ luminous efficiency, the pattern units of PSS become more complicated, and the effect of complicated geometrical features is almost impossible to study systematically by experiments only. By employing our new method, the influence of pattern parameters can be systematically studied, and various novel patterns are designed and optimized within a reasonable time span, with great improvement in LEDs＇ light extraction efficiency （LEE）. Clearly, PSS pattern design with such a method deserves particular attention. We foresee that GaN-based LEDs on these newly designed PSSs will achieve more progress in the coming years.展开更多
The characteristics of a blue light-emitting diode （LED） with a p-InA1GaN hole injection layer （HIL） is analyzed numerically. The simulation results indicate that the newly designed structure presents superior opt...The characteristics of a blue light-emitting diode （LED） with a p-InA1GaN hole injection layer （HIL） is analyzed numerically. The simulation results indicate that the newly designed structure presents superior optical and electrical performance such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-InA1GaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.展开更多
针对强日光环境下OCC(Optical Camera Communication)系统接收端解码困难的问题,提出了基于分段式线性灰度变换的Gradient-Harris解码算法。首先搭建一套OCC实验系统,接收端相机采集原始图像,利用标准相关系数匹配方法提取目标LED阵列...针对强日光环境下OCC(Optical Camera Communication)系统接收端解码困难的问题,提出了基于分段式线性灰度变换的Gradient-Harris解码算法。首先搭建一套OCC实验系统,接收端相机采集原始图像,利用标准相关系数匹配方法提取目标LED阵列区域。其次通过分段式线性灰度变换对目标LED阵列区域进行图像增强,利用Gradient-Harris解码算法进行目标LED阵列的形状提取和状态识别。实验结果表明,应用基于分段式线性灰度变换的Gradient-Harris解码算法,强日光环境下OCC实验系统的平均解码速率为128.08 bit/s,平均误码率为4.38×10^(-4),最大通信距离为55 m。展开更多
为研究LED补光对温室樱桃番茄产量和品质的影响,探讨设施栽培中利用补光手段实现增产和提高品质的调控新途径,以哈金龙樱桃番茄为试验材料,在温室条件下采用LED灯带和LED灯管对定植后樱桃番茄进行侧面补光,光源光通量密度为100 μmol/m2...为研究LED补光对温室樱桃番茄产量和品质的影响,探讨设施栽培中利用补光手段实现增产和提高品质的调控新途径,以哈金龙樱桃番茄为试验材料,在温室条件下采用LED灯带和LED灯管对定植后樱桃番茄进行侧面补光,光源光通量密度为100 μmol/m2·s,每天补光12 h （8：00～20：00）,测定分析不同补光处理下樱桃番茄果实产量和品质的变化.结果表明,LED灯管和LED灯带补光处理的樱桃番茄挂果数、总产量和单果重均显著高于对照,且LED灯管处理效果较好,挂果数、总产量和单果重分别提高48.91％、94.86％和30.86％.LED灯管补光处理能显著提高樱桃番茄果实的品质指标,Vc可溶性蛋白、游离氨基酸、可溶性糖和蔗糖含量均显著高于对照,番茄红素、花色苷、类黄酮和可溶性酚含量均最高,番茄着色最好.展开更多
基金This work was supported by the National Natural Science Foundation of China(51775199,51735004)Natural Science Foundation of Guangdong Province(2018B030306008)the Fundamental Research Funds for the Central Universities.
文摘Perovskite light emitting diodes(PeLEDs)have attracted considerable research attention because of their external quantum efficiency(EQE)of>20%and have potential scope for further improvement.However,compared to red and green PeLEDs,blue PeLEDs have not been extensively investigated,which limits their commercial applications in the fields of luminance and full-color displays.In this review,blue-PeLED-related research is categorized by the composition of perovskite.The main challenges and corresponding optimization strategies for perovskite films are summarized.Next,the novel strategies for the design of device structures of blue PeLEDs are reviewed from the perspective of transport layers and interfacial layers.Accordingly,future directions for blue PeLEDs are discussed.This review can be a guideline for optimizing perovskite film and device structure of blue PeLEDs,thereby enhancing their development and application scope.
基金supported by the National Natural Science Foundation of China (Grant No 50672007)Program for the New Century Excellent Talents of China (Grant No NCET-06-0082)the National Basic Research Program of China (Grant No2007CB936202)
文摘We have synthesized Ca2Si5N8：Eu^2＋ phosphor through a solid-state reaction and investigated its structural and luminescent properties. Our Rietveld refinement of the crystal structure of Ca1.9Eu0.1Si5N8 reveals that Eu atoms substituting for Ca atoms occupy two crystallographic positions. Between 10 K and 300 K, Ca2Si5N8：Eu^2＋ phosphor shows a broad red emission band centred at -1.97 eV-2.01 eV. The gravity centre of the excitation band is located at 3.0 eV 3.31 eV. The centroid shift of the 5d levels of Eu^2＋ is determined to be -1.17 eV, and the red-shift of the lowest absorption band to be - 0.54 eV due to the crystal field splitting. We have analysed the temperature dependence of PL by using a configuration coordinate model. The Huang-Rhys parameter S = 6.0, the phonon energy hv = 52 meV, and the Stokes shift △S = 0.57 eV are obtained. The emission intensity maximum occurring at -200 K can be explained by a trapping effect. Both photoluminescence （PL） emission intensity and decay time decrease with temperature increasing beyond 200 K due to the non-radiative process.
基金This work is jointly supported by the National Natural Science Foundation of China under Grant Nos.62004103,62105162,62005130,61827804,62274096,and 61904086the Natural Science Foundation of Jiangsu Province under Grant No.BK20200743+3 种基金the Natural Science Foundation of the Higher Education Institutions of Jiangsu Province under Grant No.22KJA510003the Natural Science Foundation of Nanjing University of Posts and Telecommunications under Grant No.NY223084the“111”project under Grant No.D17018the Postgraduate Research&Practice Innovation Program of Jiangsu Province under Grant No.SJCX230257.
文摘While considerable research has been conducted on the structural principles,fabrication techniques,and photoelectric properties of high-voltage light-emitting diodes(LEDs),their performance in light communication remains underexplored.A high-voltage seriesconnected LED or photodetector(HVS-LED/PD)based on the gallium nitride(GaN)integrated photoelectronic chip is presented in this paper.Multi-quantum wells(MQW)diodes with identical structures are integrated onto a single chip through wafer-scale micro-fabrication techniques and connected in series to construct the HVS-LED/PD.The advantages of the HVS-LED/PD in communication are explored by testing its performance as both a light transmitter and a PD.The series connection enhances the device's 3 dB bandwidth,allowing it to increase from 1.56 MHz to a minimum of 2.16 MHz when functioning as an LED,and from 47.42 kHz to at least 85.83 kHz when operating as a PD.The results demonstrate that the light communication performance of HVS-LED/PD is better than that of a single GaN MQW diode with bandwidth and transmission quantity,which enriches the research of GaN-based high-voltage devices.
基金supported by the National Natural Science Foundation of China(Grant No.61176043)the Special Funds for Provincial Strategic and Emerging Industries Projects of Guangdong Province,China(Grant Nos.2010A081002005,2011A081301003,and 2012A080304016)the Youth Foundation of South China Normal University(Grant No.2012KJ018)
文摘Blue InGaN light-emitting diodes （LEDs） with a conventional electron blocking layer （EBL）, a common n-A1GaN hole blocking layer （HBL）, and an n-A1GaN HBL with gradual A1 composition are investigated numerically, which involves analyses of the carrier concentration in the active region, energy band diagram, electrostatic field, and internal quantum efficiency （IQE）. The results indicate that LEDs with an n-AIGaN HBL with gradual AI composition exhibit better hole injection efficiency, lower electron leakage, and a smaller electrostatic field in the active region than LEDs with a conven tional p-A1GaN EBL or a common n-A1GaN HBL. Meanwhile, the efficiency droop is alleviated when an n-A1GaN HBL with gradual A1 composition is used.
基金supported by the National Key R&D Program of China(Grant Nos.2016YFB0400800,2016YFB0400801,and 2016YFB0400802)the National Natural Science Foundation of China(Grant No.61634005)the Fundamental Research Funds for the Central Universities,China(Grant No.JBZ171101)
文摘The novel AlGaN-based ultraviolet light-emitting diodes(UV-LEDs) with double superlattice structure(DSL) are proposed and demonstrated by numerical simulation and experimental verification. The DSL consists of 30-period Mg modulation-doped p-AlGaN/u-GaN superlattice(SL) and 4-period p-AlGaN/p-GaN SL electron blocking layer, which are used to replace the p-type GaN layer and electron blocking layer of conventional UV-LEDs, respectively. Due to the special effects and interfacial stress, the AlGaN/GaN short-period superlattice can reduce the acceptor ionization energy of the ptype regions, thereby increasing the hole concentration. Meanwhile, the multi-barrier electron blocking layers are effective in suppressing electron leakage and improving hole injection. Experimental results show that the enhancements of 22.5%and 37.9% in the output power and external quantum efficiency at 120 m A appear in the device with double superlattice structure.
基金Project supported by the National Natural Science Fundation for Excellent Young Scholars of China(Grant No.51422203)the National Natural Science Foundation of China(Grant No.51372001)+1 种基金the Outstanding Youth Foundation of Guangdong Scientific Committee(Grant No.S2013050013882)the Strategic Special Funds for LEDs of Guangdong Province,China(Grant Nos.2011A081301010,2011A081301012,2012A080302002,and 2012A080302004)
文摘A new method for patterned sapphire substrate （PSS） design is developed and proven to be reliable and cost-effective. As progress is made with LEDs＇ luminous efficiency, the pattern units of PSS become more complicated, and the effect of complicated geometrical features is almost impossible to study systematically by experiments only. By employing our new method, the influence of pattern parameters can be systematically studied, and various novel patterns are designed and optimized within a reasonable time span, with great improvement in LEDs＇ light extraction efficiency （LEE）. Clearly, PSS pattern design with such a method deserves particular attention. We foresee that GaN-based LEDs on these newly designed PSSs will achieve more progress in the coming years.
基金Project supported by the National Natural Science Foundation of China (Grant No.61176043)the Special Funds for Strategic and Emerging Industries Projects of Guangdong Province,China (Grant Nos.2010A081002005,2011A081301003,and 2012A080304016)
文摘The characteristics of a blue light-emitting diode （LED） with a p-InA1GaN hole injection layer （HIL） is analyzed numerically. The simulation results indicate that the newly designed structure presents superior optical and electrical performance such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-InA1GaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.
文摘针对强日光环境下OCC(Optical Camera Communication)系统接收端解码困难的问题,提出了基于分段式线性灰度变换的Gradient-Harris解码算法。首先搭建一套OCC实验系统,接收端相机采集原始图像,利用标准相关系数匹配方法提取目标LED阵列区域。其次通过分段式线性灰度变换对目标LED阵列区域进行图像增强,利用Gradient-Harris解码算法进行目标LED阵列的形状提取和状态识别。实验结果表明,应用基于分段式线性灰度变换的Gradient-Harris解码算法,强日光环境下OCC实验系统的平均解码速率为128.08 bit/s,平均误码率为4.38×10^(-4),最大通信距离为55 m。
文摘为研究LED补光对温室樱桃番茄产量和品质的影响,探讨设施栽培中利用补光手段实现增产和提高品质的调控新途径,以哈金龙樱桃番茄为试验材料,在温室条件下采用LED灯带和LED灯管对定植后樱桃番茄进行侧面补光,光源光通量密度为100 μmol/m2·s,每天补光12 h （8：00～20：00）,测定分析不同补光处理下樱桃番茄果实产量和品质的变化.结果表明,LED灯管和LED灯带补光处理的樱桃番茄挂果数、总产量和单果重均显著高于对照,且LED灯管处理效果较好,挂果数、总产量和单果重分别提高48.91％、94.86％和30.86％.LED灯管补光处理能显著提高樱桃番茄果实的品质指标,Vc可溶性蛋白、游离氨基酸、可溶性糖和蔗糖含量均显著高于对照,番茄红素、花色苷、类黄酮和可溶性酚含量均最高,番茄着色最好.
