With a chirped InAs/GaAs SML-QD （quantum dot） structure serving as the active region, the superluminescent diodes emitting at wavelength of around 970nm are fabricated. By using an active multimode interferometer co...With a chirped InAs/GaAs SML-QD （quantum dot） structure serving as the active region, the superluminescent diodes emitting at wavelength of around 970nm are fabricated. By using an active multimode interferometer configuration, these devices exhibit high continue-wave output powers from the narrow ridge waveguides. At continue-wave injection current of 800mA, an output power of 18.5mW, and the single Gaussian-like emission spectrum centered at 972nm with a full width at half maximum of 18nm are obtained.展开更多
This paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an InAl- GaAs/AlGaAs quantum dot active region. The emission spectrum of the device is centred at 884 nm with a full widt...This paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an InAl- GaAs/AlGaAs quantum dot active region. The emission spectrum of the device is centred at 884 nm with a full width at half maximum of 37 nm and an output power of 18 mW. By incorporating an Al composition into the quan- tum dot active region, short-wavelength superluminescent diode devices can be obtained. An intersection was found for the light power-injection current curves measured from the straight-waveguide facet and the bent-waveguide facet, respectively. The result is attributed to the conjunct effects of the gain and the additional loss of the bent waveguide. A numerical simulation is performed to verify the qualitative explanation. It is shown that bent waveguide loss is an important factor that affects the output power of J-shaped superluminescent diode devices.展开更多
We report on the fabrication and characterization of InAs/GaAs chirped multilayer quantum-dot superluminescent diodes(CMQD-SLDs)with and without direct Si doping in QDs.It was found that both the output power and the ...We report on the fabrication and characterization of InAs/GaAs chirped multilayer quantum-dot superluminescent diodes(CMQD-SLDs)with and without direct Si doping in QDs.It was found that both the output power and the spectral width of the CMQD-SLDs were significantly enhanced by direct Si doping in the QDs.The output power and spectral width have been increased by approximately 18.3%and 40%,respectively.Moreover,we shortened the cavity length of the doped CMQD-SLD and obtained a spectral width of 106 nm.In addition,the maximum output power and spectral width of the CMQD-SLD doped directly with Si can be further increased to 16.6 mW and 114 nm,respectively,through anti-reflection coating and device packaging.The device exhibited the smallest spectral dip of 0.2 dB when the spectrum was widest.The improved performances of the doped CMQD-SLD can be attributed to the direct doping of Si in the QDs,optimization of device structure and device packaging.展开更多
Visible-light communication(VLC)stands as a promising component of the future communication network by providing high-capacity,low-latency,and high-security wireless communication.Superluminescent diode(SLD)is propose...Visible-light communication(VLC)stands as a promising component of the future communication network by providing high-capacity,low-latency,and high-security wireless communication.Superluminescent diode(SLD)is proposed as a new light emitter in the VLC system due to its properties of droop-free emission,high optical power density,and low speckle-noise.In this paper,we analyze a VLC system based on SLD,demonstrating effective implementation of carrierless amplitude and phase modulation(CAP).We create a low-complexity memory-polynomial-aided neural network(MPANN)to replace the traditional finite impulse response(FIR)post-equalization filters of CAP,leading to significant mitigation of the linear and nonlinear distortion of the VLC channel.The MPANN shows a gain in Q factor of up to 2.7 dB higher than other equalizers,and more than four times lower complexity than a standard deep neural network(DNN),hence,the proposed MPANN opens a pathway for the next generation of robust and efficient neural network equalizers in VLC.We experimentally demonstrate a proof-of-concept 2.95-Gbit/s transmission using MPANN-aided CAP with 16-quadrature amplitude modulation(16-QAM)through a 30-cm channel based on the 442-nm blue SLD emitter.展开更多
According to the InAs/GaAs submonolayer quantum dot active region, we demonstrate a bent-waveguide superluminescent diode emitting at a wavelength of around 970 nm. At a pulsed injection current of 0.5 A, the device e...According to the InAs/GaAs submonolayer quantum dot active region, we demonstrate a bent-waveguide superluminescent diode emitting at a wavelength of around 970 nm. At a pulsed injection current of 0.5 A, the device exhibits an output power of 24 mW and an emission spectrum centred at 971 nm with a full width at half maximum of 16 nm.展开更多
对由8个量子阱所组成的条形超辐射发光二极管(Superlum inescent d iode,SLD)进行了热分析,计算了不同器件结构下的热阻和温度分布。计算结果表明,热阻变化受芯片宽度和长度的影响较大,可以达到两个数量级;当注入功率达到1 W时,有源区...对由8个量子阱所组成的条形超辐射发光二极管(Superlum inescent d iode,SLD)进行了热分析,计算了不同器件结构下的热阻和温度分布。计算结果表明,热阻变化受芯片宽度和长度的影响较大,可以达到两个数量级;当注入功率达到1 W时,有源区的温度将接近50 K。该分析对有效地设计芯片的结构,减少温度升高对SLD稳定性的影响具有指导意义。展开更多
制备了一种新型的具有高调制带宽的1 053 nm超辐射发光二极管(SLD).利用光荧光(PL)测试分析了不同温度、不同生长速率对SLD芯片外延材料质量的影响,优化了In Ga As/Ga As量子阱的生长温度与生长速率.分析了SLD模块的光电特性随温度与注...制备了一种新型的具有高调制带宽的1 053 nm超辐射发光二极管(SLD).利用光荧光(PL)测试分析了不同温度、不同生长速率对SLD芯片外延材料质量的影响,优化了In Ga As/Ga As量子阱的生长温度与生长速率.分析了SLD模块的光电特性随温度与注入电流的变化关系.研究结果表明,SLD输出波长随温度的漂移系数为0.35 nm/℃,其输出波长随注入电流的漂移对温度并不敏感.在25℃、100 m A注入电流下SLD的-3 d B调制带宽达到1.7 GHz,尾纤输出功率2.5 m W,相应的光谱半宽为24 nm,光谱波纹为0.15 d B.展开更多
基金Project supported by the National Basic Research Program of China (Grant No. 2006CB604904)the National Natural Science Foundation of China (Grant Nos. 60976057, 61274072, and 60876086)
文摘With a chirped InAs/GaAs SML-QD （quantum dot） structure serving as the active region, the superluminescent diodes emitting at wavelength of around 970nm are fabricated. By using an active multimode interferometer configuration, these devices exhibit high continue-wave output powers from the narrow ridge waveguides. At continue-wave injection current of 800mA, an output power of 18.5mW, and the single Gaussian-like emission spectrum centered at 972nm with a full width at half maximum of 18nm are obtained.
基金supported by the National Basic Research Program of China (Grant No. 2006CB604904)the National Natural Science Foundation of China (Grant Nos. 60876086, 60976057, and 60776037)
文摘This paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an InAl- GaAs/AlGaAs quantum dot active region. The emission spectrum of the device is centred at 884 nm with a full width at half maximum of 37 nm and an output power of 18 mW. By incorporating an Al composition into the quan- tum dot active region, short-wavelength superluminescent diode devices can be obtained. An intersection was found for the light power-injection current curves measured from the straight-waveguide facet and the bent-waveguide facet, respectively. The result is attributed to the conjunct effects of the gain and the additional loss of the bent waveguide. A numerical simulation is performed to verify the qualitative explanation. It is shown that bent waveguide loss is an important factor that affects the output power of J-shaped superluminescent diode devices.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.62035012,62074143,and 62004191)Zhejiang Lab (Grant No.2020LC0AD02)
文摘We report on the fabrication and characterization of InAs/GaAs chirped multilayer quantum-dot superluminescent diodes(CMQD-SLDs)with and without direct Si doping in QDs.It was found that both the output power and the spectral width of the CMQD-SLDs were significantly enhanced by direct Si doping in the QDs.The output power and spectral width have been increased by approximately 18.3%and 40%,respectively.Moreover,we shortened the cavity length of the doped CMQD-SLD and obtained a spectral width of 106 nm.In addition,the maximum output power and spectral width of the CMQD-SLD doped directly with Si can be further increased to 16.6 mW and 114 nm,respectively,through anti-reflection coating and device packaging.The device exhibited the smallest spectral dip of 0.2 dB when the spectrum was widest.The improved performances of the doped CMQD-SLD can be attributed to the direct doping of Si in the QDs,optimization of device structure and device packaging.
基金the National Key Research,Development Program of China(2017YFB0403603)the NSFC project(No.61925104).JAHL,YM,TKN and BSO gratefully acknowledge the financial support from King Abdullah University of Science and Technology(KAUST)through BAS/1/1614-01-01,REP/1/2878-01-01,GEN/1/6607-01-01,and KCR/1/2081-01-01the King Abdullah University of Science and Technology(KAUST)Office of Sponsored Research(OSR)under Award No.OSR-CRG2017-3417.JAHL further acknowledge access to the KAUST Nanofabrication Core Lab for the fabrication of devices.
文摘Visible-light communication(VLC)stands as a promising component of the future communication network by providing high-capacity,low-latency,and high-security wireless communication.Superluminescent diode(SLD)is proposed as a new light emitter in the VLC system due to its properties of droop-free emission,high optical power density,and low speckle-noise.In this paper,we analyze a VLC system based on SLD,demonstrating effective implementation of carrierless amplitude and phase modulation(CAP).We create a low-complexity memory-polynomial-aided neural network(MPANN)to replace the traditional finite impulse response(FIR)post-equalization filters of CAP,leading to significant mitigation of the linear and nonlinear distortion of the VLC channel.The MPANN shows a gain in Q factor of up to 2.7 dB higher than other equalizers,and more than four times lower complexity than a standard deep neural network(DNN),hence,the proposed MPANN opens a pathway for the next generation of robust and efficient neural network equalizers in VLC.We experimentally demonstrate a proof-of-concept 2.95-Gbit/s transmission using MPANN-aided CAP with 16-quadrature amplitude modulation(16-QAM)through a 30-cm channel based on the 442-nm blue SLD emitter.
基金supported by the National Basic Research Program of China (Grant No.2006CB604904)the National Natural Science Foundation of China (Grant Nos.60876086,60976057,and 60776037)
文摘According to the InAs/GaAs submonolayer quantum dot active region, we demonstrate a bent-waveguide superluminescent diode emitting at a wavelength of around 970 nm. At a pulsed injection current of 0.5 A, the device exhibits an output power of 24 mW and an emission spectrum centred at 971 nm with a full width at half maximum of 16 nm.
文摘制备了一种新型的具有高调制带宽的1 053 nm超辐射发光二极管(SLD).利用光荧光(PL)测试分析了不同温度、不同生长速率对SLD芯片外延材料质量的影响,优化了In Ga As/Ga As量子阱的生长温度与生长速率.分析了SLD模块的光电特性随温度与注入电流的变化关系.研究结果表明,SLD输出波长随温度的漂移系数为0.35 nm/℃,其输出波长随注入电流的漂移对温度并不敏感.在25℃、100 m A注入电流下SLD的-3 d B调制带宽达到1.7 GHz,尾纤输出功率2.5 m W,相应的光谱半宽为24 nm,光谱波纹为0.15 d B.
