We investigate a strain compensation method for the growth of complex interband cascade laser structures. For thick In As/Al Sb superlattice clad layers, the sublayer thicknesses were adjusted so that the tensile stra...We investigate a strain compensation method for the growth of complex interband cascade laser structures. For thick In As/Al Sb superlattice clad layers, the sublayer thicknesses were adjusted so that the tensile strain energy in the In As sublayer was equal to the compressive strain energy in the Al Sb sublayer. For the four-constituent active region, as the compressive strain in the Ga0.65In0.35Sb alloy layer was large, a tensile strain was incorporated in the chirped In As/Al Sb superlattice region for strain compensation to the Ga0.65In0.35Sb alloy. A laser structure of thickness 6 μm was grown on the Ga Sb substrate by molecular beam epitaxy. The wafer exhibited good surface morphology and high crystalline quality.展开更多
Strain-compensated Ge/Si0.15Ge0.85 multiple quantum wells were grown on an Si0.1 Ge0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition technology on an n＋-Si（001） substrate. Photoluminescence mea...Strain-compensated Ge/Si0.15Ge0.85 multiple quantum wells were grown on an Si0.1 Ge0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition technology on an n＋-Si（001） substrate. Photoluminescence measurements were performed at room temperature, and the quantum confinement effect of the direct-bandgap transitions of a Ge quantum well was observed, which is in good agreement with the calculated results. The luminescence mechanism was discussed by recombination rate analysis and the temperature dependence of the luminescence spectrum.展开更多
The strain and electron energy levels of InAs/GaAs（001） quantum dots （QDs） with a GaNAs strain compensation layer （SCL） are investigated. The results show that both the hydrostatic and biaxiai strain inside the ...The strain and electron energy levels of InAs/GaAs（001） quantum dots （QDs） with a GaNAs strain compensation layer （SCL） are investigated. The results show that both the hydrostatic and biaxiai strain inside the QDs with a GaNAs SCL are reduced compared with those with GaAs capping layers. Moreover, most of the compressive strain in the growth surface is compensated by the tensile strain of the GaNAs SCL, which implies that the influence of the strain environment of underlying QDs upon the next-layer QDs＇ growth surface is weak and suggests that the homogeneity and density of QDs can be improved. Our results are consistent with the published experimental literature. A GaNAs SCL is shown to influence the strain and band edge. As is known, the strain and the band offset affect the electronic structure, which shows that the SCL is proved to be useful to tailor the emission wavelength of QDs. Our research helps to better understand how the strain compensation technology can be applied to the growth of stacked QDs, which are useful in solar cells and laser devices.展开更多
基金Project supported by the National Key Research and Development Project of China (Grant No. 2018YFB2200500)the National Natural Science Foundation of China (Grant Nos. 61790583, 61835011, 62174158 and 61991431)+1 种基金Youth Innovation Promotion Association of the Chinese Academy of Sciences (Grant No. 2021107)the Key Program of the Chinese Academy of Sciences (Grant No. XDB43000000)。
文摘We investigate a strain compensation method for the growth of complex interband cascade laser structures. For thick In As/Al Sb superlattice clad layers, the sublayer thicknesses were adjusted so that the tensile strain energy in the In As sublayer was equal to the compressive strain energy in the Al Sb sublayer. For the four-constituent active region, as the compressive strain in the Ga0.65In0.35Sb alloy layer was large, a tensile strain was incorporated in the chirped In As/Al Sb superlattice region for strain compensation to the Ga0.65In0.35Sb alloy. A laser structure of thickness 6 μm was grown on the Ga Sb substrate by molecular beam epitaxy. The wafer exhibited good surface morphology and high crystalline quality.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61036003,61176013,61177038,and 60906035)the High Technology Research and Development Program of China(Grant No.2011AA010302)
文摘Strain-compensated Ge/Si0.15Ge0.85 multiple quantum wells were grown on an Si0.1 Ge0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition technology on an n＋-Si（001） substrate. Photoluminescence measurements were performed at room temperature, and the quantum confinement effect of the direct-bandgap transitions of a Ge quantum well was observed, which is in good agreement with the calculated results. The luminescence mechanism was discussed by recombination rate analysis and the temperature dependence of the luminescence spectrum.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60908028, 60971068, 10979065, and 61275201)the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant No. 2011RC0402)the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-10-0261)
文摘The strain and electron energy levels of InAs/GaAs（001） quantum dots （QDs） with a GaNAs strain compensation layer （SCL） are investigated. The results show that both the hydrostatic and biaxiai strain inside the QDs with a GaNAs SCL are reduced compared with those with GaAs capping layers. Moreover, most of the compressive strain in the growth surface is compensated by the tensile strain of the GaNAs SCL, which implies that the influence of the strain environment of underlying QDs upon the next-layer QDs＇ growth surface is weak and suggests that the homogeneity and density of QDs can be improved. Our results are consistent with the published experimental literature. A GaNAs SCL is shown to influence the strain and band edge. As is known, the strain and the band offset affect the electronic structure, which shows that the SCL is proved to be useful to tailor the emission wavelength of QDs. Our research helps to better understand how the strain compensation technology can be applied to the growth of stacked QDs, which are useful in solar cells and laser devices.
