In this paper,the small-signal modeling of the Indium Phosphide High Electron Mobility Transistor(InP HEMT)based on the Transformer neural network model is investigated.The AC S-parameters of the HEMT device are train...In this paper,the small-signal modeling of the Indium Phosphide High Electron Mobility Transistor(InP HEMT)based on the Transformer neural network model is investigated.The AC S-parameters of the HEMT device are trained and validated using the Transformer model.In the proposed model,the eight-layer transformer encoders are connected in series and the encoder layer of each Transformer consists of the multi-head attention layer and the feed-forward neural network layer.The experimental results show that the measured and modeled S-parameters of the HEMT device match well in the frequency range of 0.5-40 GHz,with the errors versus frequency less than 1%.Compared with other models,good accuracy can be achieved to verify the effectiveness of the proposed model.展开更多
基金Supported by the National Natural Science Foundation of China(62201293,62034003)the Open-Foundation of State Key Laboratory of Millimeter-Waves(K202313)the Jiangsu Province Youth Science and Technology Talent Support Project(JSTJ-2024-040)。
文摘In this paper,the small-signal modeling of the Indium Phosphide High Electron Mobility Transistor(InP HEMT)based on the Transformer neural network model is investigated.The AC S-parameters of the HEMT device are trained and validated using the Transformer model.In the proposed model,the eight-layer transformer encoders are connected in series and the encoder layer of each Transformer consists of the multi-head attention layer and the feed-forward neural network layer.The experimental results show that the measured and modeled S-parameters of the HEMT device match well in the frequency range of 0.5-40 GHz,with the errors versus frequency less than 1%.Compared with other models,good accuracy can be achieved to verify the effectiveness of the proposed model.
