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The influence of trapping centres on the photoelectron decay in silver halide 被引量:7
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作者 李晓苇 张荣香 +3 位作者 刘荣鹃 杨少鹏 韩理 傅广生 《Chinese Physics B》 SCIE EI CAS CSCD 2006年第3期624-630,共7页
Photoelectron is the foundation of latent image formation, the decay process of photoelectrons is influenced by all kinds of trapping centres in silver halide. By analysing the mechanism of latent image formation it i... Photoelectron is the foundation of latent image formation, the decay process of photoelectrons is influenced by all kinds of trapping centres in silver halide. By analysing the mechanism of latent image formation it is found that electron trap, hole trap, and one kind of recombination centre where free electron and trapped hole recombine are the main trapping centres in silver halide. Different trapping centres have different influences on the photoelectron behaviour. The effects of all kinds of typical trapping centres on the decay of photoelectrons are systematically investigated by solving the photoelectron decay kinetic equations. The results are in agreement with those obtained in the microwave absorption dielectric spectrum experiment. 展开更多
关键词 silver halide electron trap recombination centre hole trap
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