Significant progress has recently been made in enhancing the power conversion efficiency(PCE)of perovskite solar cells(PSCs).The electron transport layer(ETL),as an essential component of PSCs,significantly influences...Significant progress has recently been made in enhancing the power conversion efficiency(PCE)of perovskite solar cells(PSCs).The electron transport layer(ETL),as an essential component of PSCs,significantly influences the performance of devices.Traditional spin-coating method for preparing the ETL fails to fully cover the cusp of FTO transparent conductive glass substrate,leading to direct contact between perovskite film and FTO substrate,which induces charge recombination and reduces the performance of PSCs.To address this issue,an in-situ growth method was proposed to prepare conformal SnO_(2) films on FTO glass substrates in this study.The resulting SnO_(2) films are not only dense and uniform,fully covering the cusp of the FTO glass substrates and reducing the contact area between the FTO substrates and the perovskite films,but also facilitating the formation of perovskite films with large grain sizes.Moreover,the conformal SnO_(2) films can improve the charge extraction at the SnO_(2)/perovskite interface,reduce the trap density and trap-assisted recombination in PSCs,and thus enhance the PCE of PSCs.Through comparative experiments,it is found that the PSCs with in-situ grown SnO_(2) films show an improved PCE of 21.97%,which significantly increased compared to that with spin-coated SnO_(2) films(20.93%).All above data demonstrate that the as-prepared SnO_(2) film can serve as an ideal ETL.It is worth mentioning that this method avoids the use of corrosive hydrochloric acid and toxic thioglycolic acid,and it can also be extended to ITO flexible transparent conductive substrates in the future.展开更多
Cadmium sulfide(CdS)is an n-type semiconductor with excellent electrical conductivity that is widely used as an electron transport material(ETM)in solar cells.At present,numerous methods for preparing CdS thin films h...Cadmium sulfide(CdS)is an n-type semiconductor with excellent electrical conductivity that is widely used as an electron transport material(ETM)in solar cells.At present,numerous methods for preparing CdS thin films have emerged,among which magnetron sputtering(MS)is one of the most commonly used vacuum techniques.For this type of technique,the substrate temperature is one of the key deposition parameters that affects the interfacial properties between the target film and substrate,determining the specific growth habits of the films.Herein,the effect of substrate temperature on the microstructure and electrical properties of magnetron-sputtered CdS(MS-CdS)films was studied and applied for the first time in hydrothermally deposited antimony selenosulfide(Sb_(2)(S,Se)_(3))solar cells.Adjusting the substrate temperature not only results in the design of the flat and dense film with enhanced crystallinity but also leads to the formation of an energy level arrangement with a Sb_(2)(S,Se)_(3)layer that is more favorable for electron transfer.In addition,we developed an oxygen plasma treatment for CdS,reducing the parasitic absorption of the device and resulting in an increase in the short-circuit current density of the solar cell.This study demonstrates the feasibility of MS-CdS in the fabrication of hydrothermal Sb_(2)(S,Se)_(3)solar cells and provides interface optimization strategies to improve device performance.展开更多
Local segregation in Cu-In precursors and its effects on the element distribution and microstructures of selenized CuInSe2 thin films were investigated. Cu-In precursors with an ideal total mole ratio of Cu to In of 0...Local segregation in Cu-In precursors and its effects on the element distribution and microstructures of selenized CuInSe2 thin films were investigated. Cu-In precursors with an ideal total mole ratio of Cu to In of 0.92 were prepared by middle frequency alternating current magnetron sputtering with Cu-In alloy target, then CuInSe2 absorbers for solar cells were formed by selenization process in selenium atmosphere. Scanning electron microscope and energy dispersive X-ray spectroscope were used respectively to observe the surface morphologies and determine the compositions of both Cu-In precursors and CuInSe2 thin films. Their microstructures were characterized by X-ray diffractometry and Raman spectroscope. The results show that Cu-In precursors are mainly composed of (Cu11In9) phase with In-rich solid solution. Stoichiometric CuInSe2 thin films with a homogeneous element distribution and single chalcopyrite phase can be synthesized from a segregated Cu-In precursor film with an ideal total mole ratio of Cu to In of 0.92. CuInSe2 thin film shows P-type conductivity and its resistivity reaches 1.2×103Ω·cm.展开更多
基金Space Application System of China Manned Space Program。
文摘Significant progress has recently been made in enhancing the power conversion efficiency(PCE)of perovskite solar cells(PSCs).The electron transport layer(ETL),as an essential component of PSCs,significantly influences the performance of devices.Traditional spin-coating method for preparing the ETL fails to fully cover the cusp of FTO transparent conductive glass substrate,leading to direct contact between perovskite film and FTO substrate,which induces charge recombination and reduces the performance of PSCs.To address this issue,an in-situ growth method was proposed to prepare conformal SnO_(2) films on FTO glass substrates in this study.The resulting SnO_(2) films are not only dense and uniform,fully covering the cusp of the FTO glass substrates and reducing the contact area between the FTO substrates and the perovskite films,but also facilitating the formation of perovskite films with large grain sizes.Moreover,the conformal SnO_(2) films can improve the charge extraction at the SnO_(2)/perovskite interface,reduce the trap density and trap-assisted recombination in PSCs,and thus enhance the PCE of PSCs.Through comparative experiments,it is found that the PSCs with in-situ grown SnO_(2) films show an improved PCE of 21.97%,which significantly increased compared to that with spin-coated SnO_(2) films(20.93%).All above data demonstrate that the as-prepared SnO_(2) film can serve as an ideal ETL.It is worth mentioning that this method avoids the use of corrosive hydrochloric acid and toxic thioglycolic acid,and it can also be extended to ITO flexible transparent conductive substrates in the future.
基金supported by the National Natural Science Foundation of China(22275180)the National Key Research and Development Program of China(2019YFA0405600)the Collaborative Innovation Program of Hefei Science Center,CAS,and the University Synergy Innovation Program of Anhui Province(GXXT-2023-031).
文摘Cadmium sulfide(CdS)is an n-type semiconductor with excellent electrical conductivity that is widely used as an electron transport material(ETM)in solar cells.At present,numerous methods for preparing CdS thin films have emerged,among which magnetron sputtering(MS)is one of the most commonly used vacuum techniques.For this type of technique,the substrate temperature is one of the key deposition parameters that affects the interfacial properties between the target film and substrate,determining the specific growth habits of the films.Herein,the effect of substrate temperature on the microstructure and electrical properties of magnetron-sputtered CdS(MS-CdS)films was studied and applied for the first time in hydrothermally deposited antimony selenosulfide(Sb_(2)(S,Se)_(3))solar cells.Adjusting the substrate temperature not only results in the design of the flat and dense film with enhanced crystallinity but also leads to the formation of an energy level arrangement with a Sb_(2)(S,Se)_(3)layer that is more favorable for electron transfer.In addition,we developed an oxygen plasma treatment for CdS,reducing the parasitic absorption of the device and resulting in an increase in the short-circuit current density of the solar cell.This study demonstrates the feasibility of MS-CdS in the fabrication of hydrothermal Sb_(2)(S,Se)_(3)solar cells and provides interface optimization strategies to improve device performance.
基金Project(2004AA513023) supported by the National High Technology Research and Development Program of China
文摘Local segregation in Cu-In precursors and its effects on the element distribution and microstructures of selenized CuInSe2 thin films were investigated. Cu-In precursors with an ideal total mole ratio of Cu to In of 0.92 were prepared by middle frequency alternating current magnetron sputtering with Cu-In alloy target, then CuInSe2 absorbers for solar cells were formed by selenization process in selenium atmosphere. Scanning electron microscope and energy dispersive X-ray spectroscope were used respectively to observe the surface morphologies and determine the compositions of both Cu-In precursors and CuInSe2 thin films. Their microstructures were characterized by X-ray diffractometry and Raman spectroscope. The results show that Cu-In precursors are mainly composed of (Cu11In9) phase with In-rich solid solution. Stoichiometric CuInSe2 thin films with a homogeneous element distribution and single chalcopyrite phase can be synthesized from a segregated Cu-In precursor film with an ideal total mole ratio of Cu to In of 0.92. CuInSe2 thin film shows P-type conductivity and its resistivity reaches 1.2×103Ω·cm.
