Since rough surface scattering has a great impact on the accuracy of the propagation prediction algorithm,an integrated algorithm for indoor propagation prediction including rough surface scattering is proposed here.T...Since rough surface scattering has a great impact on the accuracy of the propagation prediction algorithm,an integrated algorithm for indoor propagation prediction including rough surface scattering is proposed here.This algorithm is composed of a three dimensional(3D) ray tracing algorithm based on binary space partitioning(BSP) and a diffuse scattering algorithm based on Oren-Nayar's theory.Lack of accuracy and prohibitive time consumption are the main drawbacks of the existing ray tracing based propagation prediction models.To defy these shortcomings,the balanced BSP tree is used in the proposed algorithm to accelerate the ray tracing,while the nearest object priority technique(NOP) and in contact surface(ICS) is used to eliminate the repeated rayobject intersection tests.Therefore,the final criteria of this study are the time consumption as well as accuracy by predicting the field strength and the number of received signals.Using the proposed approaches,our algorithm becomes faster and more accurate than the existing algorithms.A detailed comparative study with existing algorithms shows that the proposed algorithm has at most 37.83%higher accuracy and 34.44%lower time consumption.Moreover,effects of NOP and ICS techniques and scattering factor on time and ray prediction accuracy are also presented.展开更多
The effects of strain and surface roughness scattering on the quasi-ballistic hole transport in a strained gate-all-around germanium nanowire p-channel field-effect transistor （pFET） are investigated in this work. T...The effects of strain and surface roughness scattering on the quasi-ballistic hole transport in a strained gate-all-around germanium nanowire p-channel field-effect transistor （pFET） are investigated in this work. The valence subbands are shifted up and warped more parabolically by the influence of HfO2 due to the lattice mismatch. However, the boundary force only shifts the subbands downwards and has little effect on the reshaping of bands. Strain induced by HfO2 increases both the hole mobility and ON-current （/ON）, but has little effect on the hole mobility. The/ON is degraded by the surface roughness scattering in both strained and unstrained devices.展开更多
The electron mobility limited by the interface and surface roughness scatterings of the two-dimensional electron gas in AlxGa1-xN/GaN quantum wells is studied. The newly proposed surface roughness scattering in the Al...The electron mobility limited by the interface and surface roughness scatterings of the two-dimensional electron gas in AlxGa1-xN/GaN quantum wells is studied. The newly proposed surface roughness scattering in the AlGaN/GaN quantum wells becomes effective when an electric field exists in the AlxGa1-xN barrier. For the AlGaN/GaN potential well, the ground subband energy is governed by the spontaneous and the piezoelectric polarization fields which are determined by the barrier and the well thicknesses. The thickness fluctuation of the AlGaN barrier and the GaN well due to the roughnesses cause the local fluctuation of the ground subband energy, which will reduce the 2DEG mobility.展开更多
In this paper, we investigate the performance of the bulk fin field effect transistor （FinFET） through a three- dimensional （3D） full band Monte Carlo simulator with quantum correction. Several scattering mechanis...In this paper, we investigate the performance of the bulk fin field effect transistor （FinFET） through a three- dimensional （3D） full band Monte Carlo simulator with quantum correction. Several scattering mechanisms, such as the acoustic and optical phonon scattering, the ionized impurity scattering, the impact ionization scattering and the surface roughness scattering are considered in our simulator. The effects of the substrate bias and the surface roughness scattering near the Si/SiO2 interface on the performance of bulk FinFET are mainly discussed in our work. Our results show that the on-current of bulk FinFET is sensitive to the surface roughness and that we can reduce the substrate leakage current by modulating the substrate bias voltage.展开更多
基金financial support under the University of Malaya Research Grant(UMRG) scheme(RG098/12ICT)
文摘Since rough surface scattering has a great impact on the accuracy of the propagation prediction algorithm,an integrated algorithm for indoor propagation prediction including rough surface scattering is proposed here.This algorithm is composed of a three dimensional(3D) ray tracing algorithm based on binary space partitioning(BSP) and a diffuse scattering algorithm based on Oren-Nayar's theory.Lack of accuracy and prohibitive time consumption are the main drawbacks of the existing ray tracing based propagation prediction models.To defy these shortcomings,the balanced BSP tree is used in the proposed algorithm to accelerate the ray tracing,while the nearest object priority technique(NOP) and in contact surface(ICS) is used to eliminate the repeated rayobject intersection tests.Therefore,the final criteria of this study are the time consumption as well as accuracy by predicting the field strength and the number of received signals.Using the proposed approaches,our algorithm becomes faster and more accurate than the existing algorithms.A detailed comparative study with existing algorithms shows that the proposed algorithm has at most 37.83%higher accuracy and 34.44%lower time consumption.Moreover,effects of NOP and ICS techniques and scattering factor on time and ray prediction accuracy are also presented.
基金Project supported by the National Key Basic Research Program,China (Grant Nos.2011CBA00604 and 2009ZX02305-003)
文摘The effects of strain and surface roughness scattering on the quasi-ballistic hole transport in a strained gate-all-around germanium nanowire p-channel field-effect transistor （pFET） are investigated in this work. The valence subbands are shifted up and warped more parabolically by the influence of HfO2 due to the lattice mismatch. However, the boundary force only shifts the subbands downwards and has little effect on the reshaping of bands. Strain induced by HfO2 increases both the hole mobility and ON-current （/ON）, but has little effect on the hole mobility. The/ON is degraded by the surface roughness scattering in both strained and unstrained devices.
基金the National Natural Science Foundation of China(Grant Nos.91233111,11275228,60976008,61006004,61076001,and 10979507)the National Basic Research Program of China(Grant No.2012CB619305)the National High Technology Research and Development Program of China(Grant No.2011AA03A101)
文摘The electron mobility limited by the interface and surface roughness scatterings of the two-dimensional electron gas in AlxGa1-xN/GaN quantum wells is studied. The newly proposed surface roughness scattering in the AlGaN/GaN quantum wells becomes effective when an electric field exists in the AlxGa1-xN barrier. For the AlGaN/GaN potential well, the ground subband energy is governed by the spontaneous and the piezoelectric polarization fields which are determined by the barrier and the well thicknesses. The thickness fluctuation of the AlGaN barrier and the GaN well due to the roughnesses cause the local fluctuation of the ground subband energy, which will reduce the 2DEG mobility.
基金Project supported by the National Basic Research Program of China (Grant No. 2011CBA00604)
文摘In this paper, we investigate the performance of the bulk fin field effect transistor （FinFET） through a three- dimensional （3D） full band Monte Carlo simulator with quantum correction. Several scattering mechanisms, such as the acoustic and optical phonon scattering, the ionized impurity scattering, the impact ionization scattering and the surface roughness scattering are considered in our simulator. The effects of the substrate bias and the surface roughness scattering near the Si/SiO2 interface on the performance of bulk FinFET are mainly discussed in our work. Our results show that the on-current of bulk FinFET is sensitive to the surface roughness and that we can reduce the substrate leakage current by modulating the substrate bias voltage.
