In the extreme conditions of high altitude,low temperature,low pressure,and high speed,the aircraft engine is prone to flameout and difficult to start secondary ignition,which makes reliable ignition of combustion cha...In the extreme conditions of high altitude,low temperature,low pressure,and high speed,the aircraft engine is prone to flameout and difficult to start secondary ignition,which makes reliable ignition of combustion chamber at high altitude become a worldwide problem.To solve this problem,a kind of multichannel plasma igniter with round cavity is proposed in this paper,the three-channel and five-channel igniters are compared with the traditional ones.The discharge energy of the three igniters was compared based on the electric energy test and the thermal energy test,and ignition experiments was conducted in the simulated high-altitude environment of the component combustion chamber.The results show that the recessed multichannel plasma igniter has higher discharge energy than the conventional spark igniter,which can increase the conversion efficiency of electric energy from 26%to 43%,and the conversion efficiency of thermal energy from 25%to 73%.The recessed multichannel plasma igniter can achieve greater spark penetration depth and excitation area,which both increase with the increase of height.At the same height,the inlet flow helps to increase the penetration depth of the spark.The recessed multichannel plasma igniter can widen the lean ignition boundary,and the maximum enrichment percentage of lean ignition boundary can reach 31%.展开更多
We fabricated a set of symmetric gate-recess devices with gate length of 70 nm.We kept the source-to-drain spacing(L_(SD))unchanged,and obtained a group of devices with gate-recess length(L_(recess))from 0.4µm to...We fabricated a set of symmetric gate-recess devices with gate length of 70 nm.We kept the source-to-drain spacing(L_(SD))unchanged,and obtained a group of devices with gate-recess length(L_(recess))from 0.4µm to 0.8µm through process improvement.In order to suppress the influence of the kink effect,we have done SiN_(X) passivation treatment.The maximum saturation current density(ID_(max))and maximum transconductance(g_(m,max))increase as L_(recess) decreases to 0.4µm.At this time,the device shows ID_(max)=749.6 mA/mm at V_(GS)=0.2 V,V_(DS)=1.5 V,and g_(m,max)=1111 mS/mm at V_(GS)=−0.35 V,V_(DS)=1.5 V.Meanwhile,as L_(recess) increases,it causes parasitic capacitance C_(gd) and g_(d) to decrease,making f_(max) drastically increases.When L_(recess)=0.8µm,the device shows f_(T)=188 GHz and f_(max)=1112 GHz.展开更多
In this work, AlGaN/GaN FinFETs with different fin widths have been successfully fabricated, and the recessed-gate FinFETs are fabricated for comparison. The recessed-gate FinFETs exhibit higher transconductance value...In this work, AlGaN/GaN FinFETs with different fin widths have been successfully fabricated, and the recessed-gate FinFETs are fabricated for comparison. The recessed-gate FinFETs exhibit higher transconductance value and positive shift of threshold voltage. Moreover, with the fin width of the recessed-gate FinFETs increasing, the variations of both threshold voltage and the transconductance increase. Next, transfer characteristics of the recessed-gate FinFETs with different fin widths and recessed-gate depths are simulated by Silvaco software. The relationship between the threshold voltage and the AlGaN layer thickness has been investigated. The simulation results indicate that the slope of threshold voltage variation reduces with the fin width decreasing. Finally, a simplified threshold voltage model for recessed-gate FinFET is established,which agrees with both the experimental results and simulation results.展开更多
The influences of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with ICPrecessed anode was investigated for the first time. It was found that the turn-on voltage is decreased w...The influences of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with ICPrecessed anode was investigated for the first time. It was found that the turn-on voltage is decreased with the increase of dry-etching power. Furthermore, the leakage currents in the reverse bias region above pinch-off voltage rise as radio frequency（RF） power increases, while below pinch-off voltage, leakage currents tend to be independent of RF power.Based on detailed current–voltage–temperature（I–V –T） measurements, the barrier height of thermionic-field emission（TFE） from GaN is lowered as RF power increases, which results in early conduction. The increase of leakage current can be explained by Frenkel–Poole（FP） emission that higher dry-etching damage in the sidewall leads to the higher tunneling current, while below pinch-off voltage, the leakage is only related to the AlGaN surface, which is independent of RF power.展开更多
A set of 100-nm gate-length In P-based high electron mobility transistors(HEMTs)were designed and fabricated with different gate offsets in gate recess.A novel technology was proposed for independent definition of gat...A set of 100-nm gate-length In P-based high electron mobility transistors(HEMTs)were designed and fabricated with different gate offsets in gate recess.A novel technology was proposed for independent definition of gate recess and T-shaped gate by electron beam lithography.DC and RF measurement was conducted.With the gate offset varying from drain side to source side,the maximum drain current(I_(ds,max))and transconductance(g_(m,max))increased.In the meantime,fTdecreased while f;increased,and the highest fmax of 1096 GHz was obtained.It can be explained by the increase of gate-source capacitance and the decrease of gate-drain capacitance and source resistance.Output conductance was also suppressed by gate offset toward source side.This provides simple and flexible device parameter selection for HEMTs of different usages.展开更多
Autosomal recessive congenital ichthyosis(ARCI)is characterized by being born as collodion babies,hyperkeratosis,and skin scaling.We described a collodion baby at birth with mild ectropion,eclabium,and syndactyly.Whol...Autosomal recessive congenital ichthyosis(ARCI)is characterized by being born as collodion babies,hyperkeratosis,and skin scaling.We described a collodion baby at birth with mild ectropion,eclabium,and syndactyly.Whole exome sequencing showed a compound heterozygous variant c.[56C>A],p.(Ser19X)and c.[100G>A],p.(Ala34Thr)in the PNPLA1 gene[NM_001145717;exon 1].The protein encoded by PNPLA1 acts as a unique transacylase that specifically transfers linoleic acid from triglyceride toω-hydroxy fatty acid in ceramide,thus giving rise toω-O-acylceramide,a particular class of sphingolipids that is essential for skin barrier function.The variant was located in the patatin core domain of PNPLA1 and resulted in a truncated protein which could disrupt the function of the protein.This case report highlights a novel compound heterozygous mutation in PNPLA1 identified in a Chinese child.展开更多
This paper reports that multi-recessed gate 4H-SiC MESFETs （metal semiconductor filed effect transistors） with a gate periphery of 5-mm are fabricated and characterized.The multi-recessed region under the gate termi...This paper reports that multi-recessed gate 4H-SiC MESFETs （metal semiconductor filed effect transistors） with a gate periphery of 5-mm are fabricated and characterized.The multi-recessed region under the gate terminal is applied to improve the gate-drain breakdown voltage and to alleviate the trapping induced instabilities by moving the current path away from the surface of the device.The experimental results demonstrate that microwave output power density,power gain and power-added efficiency for multi-finger 5-mm gate periphery SiC MESFETs with multi-recessed gate structure are about 29%, 1.1dB and 7% higher than those of conventional devices fabricated in this work using the same process.展开更多
In this paper, a surface potential based threshold voltage model of fully-depleted（FD） recessed-source/drain（Re-S/D）silicon-on-insulator（SOI） metal-oxide semiconductor field-effect transistor（MOSFET） is presen...In this paper, a surface potential based threshold voltage model of fully-depleted（FD） recessed-source/drain（Re-S/D）silicon-on-insulator（SOI） metal-oxide semiconductor field-effect transistor（MOSFET） is presented while considering the effects of high-k gate-dielectric material induced fringing-field. The two-dimensional（2D） Poisson＇s equation is solved in a channel region in order to obtain the surface potential under the assumption of the parabolic potential profile in the transverse direction of the channel with appropriate boundary conditions. The accuracy of the model is verified by comparing the model＇s results with the 2D simulation results from ATLAS over a wide range of channel lengths and other parameters,including the dielectric constant of gate-dielectric material.展开更多
In this paper, in order to solve the interface-trap issue and enhance the transconductance induced by high-k dielectric in metal-insulator-semiconductor （MIS） high electron mobility transistors （HEMTs）, we demonst...In this paper, in order to solve the interface-trap issue and enhance the transconductance induced by high-k dielectric in metal-insulator-semiconductor （MIS） high electron mobility transistors （HEMTs）, we demonstrate better performances of recessed-gate A1203 MIS-HEMTs which are fabricated by Fluorine-based Si3N4 etching and chlorine- based A1CaN etching with three etching times （15 s, 17 s and 19 s）. The gate leakage current of MIS-HEMT is about three orders of magnitude lower than that of A1GaN/CaN HEMT. Through the recessed-gate etching, the transconductanee increases effectively. When the recessed-gate depth is 1.02 nm, the best interface performance with Tit----（0.20--1.59） p^s and Dit ：（0.55-1.08）x 1012 cm-2.eV- 1 can be obtained. After chlorine-based etching, the interface trap density reduces considerably without generating any new type of trap. The accumulated chlorine ions and the N vacancies in the AIGaN surface caused by the plasma etching can degrade the breakdown and the high frequency performances of devices. By comparing the characteristics of recessed-gate MIS-HEMTs with different etching times, it is found that a low power chlorine-based plasma etching for a short time （15 s in this paper） can enhance the performances of MIS-HEMTs effectively.展开更多
The distribution of American industries has been unbalanced and most of the early industrial regions were centered in northeastern America.The northeastern traditional industrial base once was called"manufacturin...The distribution of American industries has been unbalanced and most of the early industrial regions were centered in northeastern America.The northeastern traditional industrial base once was called"manufacturing belt".Since the 1950s,old industrial bases in the United States have been under recession.The northeastern region was then even called"rust belt".Some issues and measures of policy were set up by the government to adjust and restructure the old industrial bases,and some are useful experience and inspirations for our country,such as setting up special branches and organizations,establishing and implementing strategic planning for the adjustment and restructure of old industrial bases,adjusting the industrial branch and system,emphasizing on environment control and preservation and so on was achieved.Learning the successful experience from America,effective countermeasures and steps must be taken to accelerate the revival of the old industrial base in Northeastern China.展开更多
基金National Natural Science Foundation of China(Grant No.91641204).
文摘In the extreme conditions of high altitude,low temperature,low pressure,and high speed,the aircraft engine is prone to flameout and difficult to start secondary ignition,which makes reliable ignition of combustion chamber at high altitude become a worldwide problem.To solve this problem,a kind of multichannel plasma igniter with round cavity is proposed in this paper,the three-channel and five-channel igniters are compared with the traditional ones.The discharge energy of the three igniters was compared based on the electric energy test and the thermal energy test,and ignition experiments was conducted in the simulated high-altitude environment of the component combustion chamber.The results show that the recessed multichannel plasma igniter has higher discharge energy than the conventional spark igniter,which can increase the conversion efficiency of electric energy from 26%to 43%,and the conversion efficiency of thermal energy from 25%to 73%.The recessed multichannel plasma igniter can achieve greater spark penetration depth and excitation area,which both increase with the increase of height.At the same height,the inlet flow helps to increase the penetration depth of the spark.The recessed multichannel plasma igniter can widen the lean ignition boundary,and the maximum enrichment percentage of lean ignition boundary can reach 31%.
基金the National Natural Science Foundation of China(Grant No.61434006).
文摘We fabricated a set of symmetric gate-recess devices with gate length of 70 nm.We kept the source-to-drain spacing(L_(SD))unchanged,and obtained a group of devices with gate-recess length(L_(recess))from 0.4µm to 0.8µm through process improvement.In order to suppress the influence of the kink effect,we have done SiN_(X) passivation treatment.The maximum saturation current density(ID_(max))and maximum transconductance(g_(m,max))increase as L_(recess) decreases to 0.4µm.At this time,the device shows ID_(max)=749.6 mA/mm at V_(GS)=0.2 V,V_(DS)=1.5 V,and g_(m,max)=1111 mS/mm at V_(GS)=−0.35 V,V_(DS)=1.5 V.Meanwhile,as L_(recess) increases,it causes parasitic capacitance C_(gd) and g_(d) to decrease,making f_(max) drastically increases.When L_(recess)=0.8µm,the device shows f_(T)=188 GHz and f_(max)=1112 GHz.
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFB0400 300)the National Natural Science Foundation of China(Grant Nos.61574110,61574112,and 61474091)
文摘In this work, AlGaN/GaN FinFETs with different fin widths have been successfully fabricated, and the recessed-gate FinFETs are fabricated for comparison. The recessed-gate FinFETs exhibit higher transconductance value and positive shift of threshold voltage. Moreover, with the fin width of the recessed-gate FinFETs increasing, the variations of both threshold voltage and the transconductance increase. Next, transfer characteristics of the recessed-gate FinFETs with different fin widths and recessed-gate depths are simulated by Silvaco software. The relationship between the threshold voltage and the AlGaN layer thickness has been investigated. The simulation results indicate that the slope of threshold voltage variation reduces with the fin width decreasing. Finally, a simplified threshold voltage model for recessed-gate FinFET is established,which agrees with both the experimental results and simulation results.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51177175 and 61274039)the National Basic Research Program of China(Grant Nos.2010CB923200 and 2011CB301903)+4 种基金the Ph.D. Programs Foundation of Ministry of Education of China(Grant No.20110171110021)the International Science and Technology Collaboration Program of China(Grant No.2012DFG52260)the National High Technology Research and Development Program of China(Grant No.2014AA032606)the Science and Technology Plan of Guangdong Province,China(Grant No.2013B010401013)the Opened Fund of the State Key Laboratory on Integrated Optoelectronics,China(Grant No.IOSKL2014KF17)
文摘The influences of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with ICPrecessed anode was investigated for the first time. It was found that the turn-on voltage is decreased with the increase of dry-etching power. Furthermore, the leakage currents in the reverse bias region above pinch-off voltage rise as radio frequency（RF） power increases, while below pinch-off voltage, leakage currents tend to be independent of RF power.Based on detailed current–voltage–temperature（I–V –T） measurements, the barrier height of thermionic-field emission（TFE） from GaN is lowered as RF power increases, which results in early conduction. The increase of leakage current can be explained by Frenkel–Poole（FP） emission that higher dry-etching damage in the sidewall leads to the higher tunneling current, while below pinch-off voltage, the leakage is only related to the AlGaN surface, which is independent of RF power.
基金Project supported by the National Nature Science Foundation of China(Grant No.61434006)。
文摘A set of 100-nm gate-length In P-based high electron mobility transistors(HEMTs)were designed and fabricated with different gate offsets in gate recess.A novel technology was proposed for independent definition of gate recess and T-shaped gate by electron beam lithography.DC and RF measurement was conducted.With the gate offset varying from drain side to source side,the maximum drain current(I_(ds,max))and transconductance(g_(m,max))increased.In the meantime,fTdecreased while f;increased,and the highest fmax of 1096 GHz was obtained.It can be explained by the increase of gate-source capacitance and the decrease of gate-drain capacitance and source resistance.Output conductance was also suppressed by gate offset toward source side.This provides simple and flexible device parameter selection for HEMTs of different usages.
基金This study was supported by the Jiangsu Maternal and Child Health Research Project(F201863).
文摘Autosomal recessive congenital ichthyosis(ARCI)is characterized by being born as collodion babies,hyperkeratosis,and skin scaling.We described a collodion baby at birth with mild ectropion,eclabium,and syndactyly.Whole exome sequencing showed a compound heterozygous variant c.[56C>A],p.(Ser19X)and c.[100G>A],p.(Ala34Thr)in the PNPLA1 gene[NM_001145717;exon 1].The protein encoded by PNPLA1 acts as a unique transacylase that specifically transfers linoleic acid from triglyceride toω-hydroxy fatty acid in ceramide,thus giving rise toω-O-acylceramide,a particular class of sphingolipids that is essential for skin barrier function.The variant was located in the patatin core domain of PNPLA1 and resulted in a truncated protein which could disrupt the function of the protein.This case report highlights a novel compound heterozygous mutation in PNPLA1 identified in a Chinese child.
基金Project supported by Major State Basic Research Development Program of China (Grant No 51327010101)
文摘This paper reports that multi-recessed gate 4H-SiC MESFETs （metal semiconductor filed effect transistors） with a gate periphery of 5-mm are fabricated and characterized.The multi-recessed region under the gate terminal is applied to improve the gate-drain breakdown voltage and to alleviate the trapping induced instabilities by moving the current path away from the surface of the device.The experimental results demonstrate that microwave output power density,power gain and power-added efficiency for multi-finger 5-mm gate periphery SiC MESFETs with multi-recessed gate structure are about 29%, 1.1dB and 7% higher than those of conventional devices fabricated in this work using the same process.
基金supported by the Science and Engineering Research Board(SERB),Department of Science and Technology,Ministry of Human Resource and Development,Government of India under Young Scientist Research(Grant No.SB/FTP/ETA-415/2012)
文摘In this paper, a surface potential based threshold voltage model of fully-depleted（FD） recessed-source/drain（Re-S/D）silicon-on-insulator（SOI） metal-oxide semiconductor field-effect transistor（MOSFET） is presented while considering the effects of high-k gate-dielectric material induced fringing-field. The two-dimensional（2D） Poisson＇s equation is solved in a channel region in order to obtain the surface potential under the assumption of the parabolic potential profile in the transverse direction of the channel with appropriate boundary conditions. The accuracy of the model is verified by comparing the model＇s results with the 2D simulation results from ATLAS over a wide range of channel lengths and other parameters,including the dielectric constant of gate-dielectric material.
基金supported by the National Key Science and Technology Special Project,China (Grant No. 2008ZX01002-002)the National Natural Science Foundation of China (Grant No. 60736033)
文摘In this paper, in order to solve the interface-trap issue and enhance the transconductance induced by high-k dielectric in metal-insulator-semiconductor （MIS） high electron mobility transistors （HEMTs）, we demonstrate better performances of recessed-gate A1203 MIS-HEMTs which are fabricated by Fluorine-based Si3N4 etching and chlorine- based A1CaN etching with three etching times （15 s, 17 s and 19 s）. The gate leakage current of MIS-HEMT is about three orders of magnitude lower than that of A1GaN/CaN HEMT. Through the recessed-gate etching, the transconductanee increases effectively. When the recessed-gate depth is 1.02 nm, the best interface performance with Tit----（0.20--1.59） p^s and Dit ：（0.55-1.08）x 1012 cm-2.eV- 1 can be obtained. After chlorine-based etching, the interface trap density reduces considerably without generating any new type of trap. The accumulated chlorine ions and the N vacancies in the AIGaN surface caused by the plasma etching can degrade the breakdown and the high frequency performances of devices. By comparing the characteristics of recessed-gate MIS-HEMTs with different etching times, it is found that a low power chlorine-based plasma etching for a short time （15 s in this paper） can enhance the performances of MIS-HEMTs effectively.
文摘The distribution of American industries has been unbalanced and most of the early industrial regions were centered in northeastern America.The northeastern traditional industrial base once was called"manufacturing belt".Since the 1950s,old industrial bases in the United States have been under recession.The northeastern region was then even called"rust belt".Some issues and measures of policy were set up by the government to adjust and restructure the old industrial bases,and some are useful experience and inspirations for our country,such as setting up special branches and organizations,establishing and implementing strategic planning for the adjustment and restructure of old industrial bases,adjusting the industrial branch and system,emphasizing on environment control and preservation and so on was achieved.Learning the successful experience from America,effective countermeasures and steps must be taken to accelerate the revival of the old industrial base in Northeastern China.
