A novel ultra-low-power readout integrated circuit(ROIC) for 1 024×1 024 ultraviolet(UV) AlGaN focal plane arrays(FPA) with 18 μm-pitch was presented. In order to optimize power consumption for UVFPA readout cir...A novel ultra-low-power readout integrated circuit(ROIC) for 1 024×1 024 ultraviolet(UV) AlGaN focal plane arrays(FPA) with 18 μm-pitch was presented. In order to optimize power consumption for UVFPA readout circuit these methods were adopted, which including single-terminal amplifier under subthreshold region as CTIA amplifier, common current source load for source follow(SF) buffer in column pixels and level shift circuits, and time-sharing tail current source for column buffer. The smallest operational current of CTIA in pixel unit is only 8.5 nA with 3.3 V power supply by using single-terminal amplifier. The ROIC has been fabricated in SMIC 0.18 μm 1P6M mixed signal process and also achieved better performances with the novel design of bias current adjustable. Furthermore, the overall power consumption of the chip is 67.3 mW at 2 MHz in 8-outputs mode by the above methods according to the experimental results.展开更多
本文报道了1280×1024元InAs/GaSb II类超晶格中/中波双色红外焦平面阵列探测器的研究结果。探测器采用PN-NP叠层双色外延结构,信号提取采用叠层双色结构和顺序读出方式。运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外...本文报道了1280×1024元InAs/GaSb II类超晶格中/中波双色红外焦平面阵列探测器的研究结果。探测器采用PN-NP叠层双色外延结构,信号提取采用叠层双色结构和顺序读出方式。运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为中波1:6 ML InAs/7 ML GaSb和中波2:9 ML InAs/7 ML GaSb。焦平面阵列像元中心距为12μm。在80 K时测试,器件双波段的工作谱段为中波1:3~4μm,中波2:3.8~5.2μm。中波1器件平均峰值探测率达到6.32×10^(11) cm·Hz^(1/2)W^(-1),中波2器件平均峰值探测率达到2.84×10^(11) cm·Hz^(1/2)W^(-1)。红外焦平面偏压调节成像测试得到清晰的双波段成像。本文是国内首次报道1280×1024规模InAs/GaSb II类超晶格中/中波双色红外焦平面探测器。展开更多
文摘A novel ultra-low-power readout integrated circuit(ROIC) for 1 024×1 024 ultraviolet(UV) AlGaN focal plane arrays(FPA) with 18 μm-pitch was presented. In order to optimize power consumption for UVFPA readout circuit these methods were adopted, which including single-terminal amplifier under subthreshold region as CTIA amplifier, common current source load for source follow(SF) buffer in column pixels and level shift circuits, and time-sharing tail current source for column buffer. The smallest operational current of CTIA in pixel unit is only 8.5 nA with 3.3 V power supply by using single-terminal amplifier. The ROIC has been fabricated in SMIC 0.18 μm 1P6M mixed signal process and also achieved better performances with the novel design of bias current adjustable. Furthermore, the overall power consumption of the chip is 67.3 mW at 2 MHz in 8-outputs mode by the above methods according to the experimental results.
文摘本文报道了1280×1024元InAs/GaSb II类超晶格中/中波双色红外焦平面阵列探测器的研究结果。探测器采用PN-NP叠层双色外延结构,信号提取采用叠层双色结构和顺序读出方式。运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为中波1:6 ML InAs/7 ML GaSb和中波2:9 ML InAs/7 ML GaSb。焦平面阵列像元中心距为12μm。在80 K时测试,器件双波段的工作谱段为中波1:3~4μm,中波2:3.8~5.2μm。中波1器件平均峰值探测率达到6.32×10^(11) cm·Hz^(1/2)W^(-1),中波2器件平均峰值探测率达到2.84×10^(11) cm·Hz^(1/2)W^(-1)。红外焦平面偏压调节成像测试得到清晰的双波段成像。本文是国内首次报道1280×1024规模InAs/GaSb II类超晶格中/中波双色红外焦平面探测器。
