We present an optimal and robust quantum control method for efficient population transfer in asymmetric double quantum-dot molecules.We derive a long-duration control scheme that allows for highly efficient population...We present an optimal and robust quantum control method for efficient population transfer in asymmetric double quantum-dot molecules.We derive a long-duration control scheme that allows for highly efficient population transfer by accurately controlling the amplitude of a narrow-bandwidth pulse.To overcome fluctuations in control field parameters,we employ a frequency-domain quantum optimal control theory method to optimize the spectral phase of a single pulse with broad bandwidth while preserving the spectral amplitude.It is shown that this spectral-phase-only optimization approach can successfully identify robust and optimal control fields,leading to efficient population transfer to the target state while concurrently suppressing population transfer to undesired states.The method demonstrates resilience to fluctuations in control field parameters,making it a promising approach for reliable and efficient population transfer in practical applications.展开更多
A switchable autostereoscopic 3-dimensional(3D) display device with wide color gamut is introduced in this paper. In conjunction with a novel directional quantum-dot(QD) backlight, the precise scanning control strateg...A switchable autostereoscopic 3-dimensional(3D) display device with wide color gamut is introduced in this paper. In conjunction with a novel directional quantum-dot(QD) backlight, the precise scanning control strategy, and the eye-tracking system, this spatial-sequential solution enables our autostereoscopic display to combine all the advantages of full resolution,wide color gamut, low crosstalk, and switchable 2D/3D. And also, we fabricated an autostereoscopic display prototype and demonstrated its performances effectively. The results indicate that our system can both break the limitation of viewing position and provide high-quality 3D images. We present two working modes in this system. In the spatial-sequential mode,the crosstalk is about 6%. In the time-multiplexed mode, the viewer should wear auxiliary and the crosstalk is about 1%,just next to that of a commercial 3D display(BENQ XL2707-B and View Sonic VX2268 WM). Additionally, our system is also completely compatible with active shutter glasses and its 3D resolution is same as its 2D resolution. Because of the excellent properties of the QD material, the color gamut can be widely extended to 77.98% according to the ITU-R recommendation BT.2020(Rec.2020).展开更多
We report on the fabrication and characterization of InAs/GaAs chirped multilayer quantum-dot superluminescent diodes(CMQD-SLDs)with and without direct Si doping in QDs.It was found that both the output power and the ...We report on the fabrication and characterization of InAs/GaAs chirped multilayer quantum-dot superluminescent diodes(CMQD-SLDs)with and without direct Si doping in QDs.It was found that both the output power and the spectral width of the CMQD-SLDs were significantly enhanced by direct Si doping in the QDs.The output power and spectral width have been increased by approximately 18.3%and 40%,respectively.Moreover,we shortened the cavity length of the doped CMQD-SLD and obtained a spectral width of 106 nm.In addition,the maximum output power and spectral width of the CMQD-SLD doped directly with Si can be further increased to 16.6 mW and 114 nm,respectively,through anti-reflection coating and device packaging.The device exhibited the smallest spectral dip of 0.2 dB when the spectrum was widest.The improved performances of the doped CMQD-SLD can be attributed to the direct doping of Si in the QDs,optimization of device structure and device packaging.展开更多
We theoretically analyze the transient properties of a probe field absorption and dispersion in a coupled semiconductor double-quantum-dot nanostructure.We show that in the presence of the Gaussian laser beams,absorpt...We theoretically analyze the transient properties of a probe field absorption and dispersion in a coupled semiconductor double-quantum-dot nanostructure.We show that in the presence of the Gaussian laser beams,absorption and dispersion of the probe field can be dramatically influenced by the relative phase between applied fields and intensity of the Gaussian laser beams.Transient and steady-state behaviors of the probe field absorption and dispersion are discussed to estimate the required switching time.The estimated range is between 5-8 ps for subluminal to superluminal light propagation.展开更多
To fill the continuous needs for faster processing elements with less power consumption causes large pressure on the complementary metal oxide semiconductor(CMOS)technology developers.The scaling scenario is not an op...To fill the continuous needs for faster processing elements with less power consumption causes large pressure on the complementary metal oxide semiconductor(CMOS)technology developers.The scaling scenario is not an option nowadays and other technologies need to be investigated.The quantum-dot cellular automata(QCA)technology is one of the important emerging nanotechnologies that have attracted much researchers’attention in recent years.This technology has many interesting features,such as high speed,low power consumption,and small size.These features make it an appropriate alternative to the CMOS technique.This paper suggests three novel structures of XNOR gates in the QCA technology.The presented structures do not follow the conventional approaches to the logic gates design but depend on the inherent capabilities of the new technology.The proposed structures are used as the main building blocks for a single-bit comparator.The resulted circuits are simulated for the verification purpose and then compared with existing counterparts in the literature.The comparison results are encouraging to append the proposed structures to the library of QCA gates.展开更多
Quantum-dot cellular automata(QCA)is an emerging computational paradigm which can overcome scaling limitations of the existing complementary metal oxide semiconductor(CMOS)technology.The existence of defects cannot be...Quantum-dot cellular automata(QCA)is an emerging computational paradigm which can overcome scaling limitations of the existing complementary metal oxide semiconductor(CMOS)technology.The existence of defects cannot be ignored,considering the fabrication of QCA devices at the molecular level where it could alter the functionality.Therefore,defects in QCA devices need to be analyzed.So far,the simulation-based displacement defect analysis has been presented in the literature,which results in an increased demand in the corresponding mathematical model.In this paper,the displacement defect analysis of the QCA main primitive,majority voter(MV),is presented and carried out both in simulation and mathematics,where the kink energy based mathematical model is applied.The results demonstrate that this model is valid for the displacement defect in QCA MV.展开更多
We report on the measurement of junction temperature of the InAs/InP（l00） quantum dot lasers working in the 1.55μm wavelength region. The measurement is based on analyzing the temperature induced mode shift of the ...We report on the measurement of junction temperature of the InAs/InP（l00） quantum dot lasers working in the 1.55μm wavelength region. The measurement is based on analyzing the temperature induced mode shift of the Fabry-Perot cavity. Under pulsed operation mode, more than 20℃ junction temperature rise is measured for the quantum-dot （QD） laser when the duty cycle is increased from 1% to 95%. For a reference quantum well laser, the junction temperature rise is obtained as only around 3℃. The large junction temperature rise might be a crucial factor to improve the performance of QD lasers.展开更多
With a chirped InAs/GaAs SML-QD （quantum dot） structure serving as the active region, the superluminescent diodes emitting at wavelength of around 970nm are fabricated. By using an active multimode interferometer co...With a chirped InAs/GaAs SML-QD （quantum dot） structure serving as the active region, the superluminescent diodes emitting at wavelength of around 970nm are fabricated. By using an active multimode interferometer configuration, these devices exhibit high continue-wave output powers from the narrow ridge waveguides. At continue-wave injection current of 800mA, an output power of 18.5mW, and the single Gaussian-like emission spectrum centered at 972nm with a full width at half maximum of 18nm are obtained.展开更多
This paper presents a finite element method of calculating strain distributions in and around the self-organized GaN/AlN hexagonal quantum dots. The model is based on the continuum elastic theory, which is capable of ...This paper presents a finite element method of calculating strain distributions in and around the self-organized GaN/AlN hexagonal quantum dots. The model is based on the continuum elastic theory, which is capable of treating a quantum dot with an arbitrary shape. A truncated hexagonal pyramid shaped quantum dot is adopted in this paper. The electronic energy levels of the GaN/AlN system are calculated by solving a three-dimension effective mass Shrodinger equation including a strain modified confinement potential and polarization effects. The calculations support the previous results published in the literature.展开更多
We propose a Rashba three-terminal double-quantum-dot device to generate a spin-polarized current and manipulate the electron spin in each quantum dot by utilizing the temperature gradient instead of the electric bias...We propose a Rashba three-terminal double-quantum-dot device to generate a spin-polarized current and manipulate the electron spin in each quantum dot by utilizing the temperature gradient instead of the electric bias voltage. This device possesses a nonresonant tunneling channel and two resonant tunneling channels. The Keldysh nonequilibrium Green＇s function techniques are employed to determinate the spin-polarized current flowing from the electrodes and the spin accumulation in each quantum dot. We find that their signs and magnitudes are well controllable by the gate voltage or the temperature gradient. This result is attributed to the change in the slope of the transmission probability at the Fermi levels in the low-temperature region. Importantly, an obviously pure spin current can be injected into or extracted from one of the three electrodes by properly choosing the temperature gradient and the gate voltages. Therefore, the device can be used as an ideal thermal generator to produce a pure spin current and manipulate the electron spin in the quantum dot.展开更多
A broadband tunable grating-coupled external cavity laser is realized by employing a self-assembled InAs/GaAs quantum-dot （QD） superluminescent diode （SLD） as the gain device. The SLD device is processed with a be...A broadband tunable grating-coupled external cavity laser is realized by employing a self-assembled InAs/GaAs quantum-dot （QD） superluminescent diode （SLD） as the gain device. The SLD device is processed with a bent-waveguide structure and facet antireflection （AR） coating. Tuning bandwidths of 106 nm and 117 nm are achieved under a-A and 3.5-A injection currents, respectively. The large tuning range originates essentially from the broad gain spectrum of self-assembled QDs. The bent waveguide structure combined with the facet AR coating plays a role in suppressing the inner-cavity lasing under a large injection current.展开更多
The growth of GaAs epilayers on silicon substrates with multiple layers of InAs quantum dots（QDs） as dislocation filters by metalorganic chemical vapor deposition（MOCVD） is investigated in detail.The growth condit...The growth of GaAs epilayers on silicon substrates with multiple layers of InAs quantum dots（QDs） as dislocation filters by metalorganic chemical vapor deposition（MOCVD） is investigated in detail.The growth conditions of single and multiple layers of QDs used as dislocation filters in GaAs/Si epilayers are optimized.It is found that the insertion of a five-layer InAs QDs into the GaAs buffer layer effectively reduces the dislocation density of GaAs/Si film.Compared with the dislocation density of 5×10^7 cm^-2 in the GaAs/Si sample without QDs,a density of 2×10^6 cm^-2 is achieved in the sample with QD dislocation filters.展开更多
The 1.55-μm quantum-dot (QD) micropillar cavities are strongly required as single photon sources (SPSs) for silica-fiber-based quantum information processing. Theoretical analysis shows that the adiabatic distributed...The 1.55-μm quantum-dot (QD) micropillar cavities are strongly required as single photon sources (SPSs) for silica-fiber-based quantum information processing. Theoretical analysis shows that the adiabatic distributed Bragg reflector (DBR) structure may greatly improve the quality of a micropillar cavity. An InGaAsP/InP micropillar cavity is originally difficult, but it becomes more likely usable with inserted tapered (thickness decreased towards the center) distributed DBRs. Simulation turns out that, incorporating adiabatically tapered DBRs, a Si/SiO2- InP hybrid micropillar cavity, which enables weakly coupling InAs/InP quantum dots (QDs), can even well satisfy strong coupling at a smaller diameter. Certainly, not only the tapered structure, other adiabatic designs, e.g., both DBR layers getting thicker and one thicker one thinner, also improve the quality, reduce the diameter, and degrade the fabrication difficulty of Si/SiO2-InP hybrid micropillar cavities. Furthermore, the problem of the thin epitaxial semiconductor layer can also be greatly resolved by inserting adiabatic InGaAsP/InP DBRs. With tapered DBRs, the InGaAsP/InP-air-aperture micro-pillar cavity serves as an efficient, coherent, and monolithically producible 1.55-μm single-photon source (SPS). The adiabatic design is thus an effective way to obtain prospective candidates for 1.55-μm QD SPSs.展开更多
The spin-polarized linear conductance spectrum and current–voltage characteristics in a four-quantum-dot ring embodied into Aharonov–Bohm （AB） interferometer are investigated theoretically by considering a local R...The spin-polarized linear conductance spectrum and current–voltage characteristics in a four-quantum-dot ring embodied into Aharonov–Bohm （AB） interferometer are investigated theoretically by considering a local Rashba spin–orbit interaction. It shows that the spin-polarized linear conductance and the corresponding spin polarization are each a function of magnetic flux phase at zero bias voltage with a period of 2π, and that Hubbard U cannot influence the electron transport properties in this case. When adjusting appropriately the structural parameter of inter-dot coupling and dot-lead coupling strength, the electronic spin polarization can reach a maximum value. Furthermore, by adjusting the bias voltages applied to the leads, the spin-up and spin-down currents move in opposite directions and pure spin current exists in the configuration space in appropriate situations. Based on the numerical results, such a model can be applied to the design of a spin filter device.展开更多
According to the well-established light-to-electricity conversion theory,resonant excited carriers in the quantum dots will relax to the ground states and cannot escape from the quantum dots to form photocurrent,which...According to the well-established light-to-electricity conversion theory,resonant excited carriers in the quantum dots will relax to the ground states and cannot escape from the quantum dots to form photocurrent,which have been observed in quantum dots without a p–n junction at an external bias.Here,we experimentally observed more than 88% of the resonantly excited photo carriers escaping from In As quantum dots embedded in a short-circuited p–n junction to form photocurrent.The phenomenon cannot be explained by thermionic emission,tunneling process,and intermediate-band theories.A new mechanism is suggested that the photo carriers escape directly from the quantum dots to form photocurrent rather than relax to the ground state of quantum dots induced by a p–n junction.The finding is important for understanding the low-dimensional semiconductor physics and applications in solar cells and photodiode detectors.展开更多
We study the spin-dependent thermopower in a double-quantum-dot(DQD) embedded between the left and right two-dimensional electron gases(2DEGs) in doped quantum wells under an in-plane magnetic field. When the separati...We study the spin-dependent thermopower in a double-quantum-dot(DQD) embedded between the left and right two-dimensional electron gases(2DEGs) in doped quantum wells under an in-plane magnetic field. When the separation between the DQD is smaller than the Fermi wavelength in the 2DEGs, the asymmetry in the dots' energy levels leads to pronounced quantum interference effects characterized by the Dicke line-shape of the conductance, which are sensitive to the properties of the 2DEGs. The magnitude of the thermopower, which denotes the generated voltage in response to an infinitesimal temperature difference between the two 2DEGs under vanishing charge current, will be obviously enhanced by the Dicke effect. The application of the in-plane magnetic field results in the polarization of the spin-up and spin-down conductances and thermopowers, and enables an efficient spin-filter device in addition to a tunable pure spin thermopower in the absence of its charge counterpart.展开更多
Using the tight-binding approximation and the transfer matrix method, this paper studies the electronic transport properties through a periodic array of quantum-dot （QD） rings threaded by a magnetic flux. It demonst...Using the tight-binding approximation and the transfer matrix method, this paper studies the electronic transport properties through a periodic array of quantum-dot （QD） rings threaded by a magnetic flux. It demonstrates that the even^odd parity of the QD number in a single ring and the number of the QD rings in the array play a crucial role in the electron transmission. For a single QD ring, the resonance and antiresonance transmission depend not only on the applied magnetic flux but also on the difference between the number of QDs on the two arms of the ring. For an array of QD rings, the transmission properties are related not only to the even-odd parity of the number No of QDs in the single ring but also to the even-odd parity of the ring number N in the array. When the incident electron energy is aligned with the site energy, for the array of N rings with No = odd the antiresonance transmission cannot occur but the resonance transmission may occur and the transmission spectrum has N resonance peaks （N - 1 resonance peaks） in a period for N = odd （for N = even）. For the array of N rings with No = even the transmission properties depend on the flux threading the ring and the QD number on one arm of the ring. These results may be helpful in designing QD devices.展开更多
Andreev reflection （AR） in a normal-metal/quantum-dot/superconductor （N-QD-S） system with coupled Majorana bound states （MBSs） is investigated theoretically. We find that in the N--QD-S system, the AR can be enh...Andreev reflection （AR） in a normal-metal/quantum-dot/superconductor （N-QD-S） system with coupled Majorana bound states （MBSs） is investigated theoretically. We find that in the N--QD-S system, the AR can be enhanced when coupling to the MBSs is incorporated. Fano line-shapes can be observed in the AR conductance spectrum when there is an appropriate QD-MBS coupling or MBS-MBS coupling. The AR conductance is always e2/2h at the zero Fermi energy point when only QD--MBSs coupling is considered. In addition, the resonant AR occurs when the MBS-MBS coupling roughly equals to the QD energy level. We also find that an AR antiresonance appears when the QD energy level approximately equals to the sum of the QD-MBS coupling and the MBS-MBS coupling. These features may serve as characteristic signatures for the probe of MBSs.展开更多
A wide wavelength tuning range swept external-cavity laser using an In As/Ga As quantum-dot superluminescent diode as a gain device is demonstrated. The tunable filter consists of a polygon scanner and a grating in Li...A wide wavelength tuning range swept external-cavity laser using an In As/Ga As quantum-dot superluminescent diode as a gain device is demonstrated. The tunable filter consists of a polygon scanner and a grating in Littrow telescope-less configuration. The swept laser generates greater than 54-m W peak output power and up to 33-k Hz sweep rate with a sweep range of 150 nm centered at 1155 nm. The effects of injection current and sweep rate on the sweep performance of the swept laser are studied.展开更多
We investigate the quantum transport properties through a special kind of quantum dot（QD） system composed of a serially coupled multi-QD-pair（multi-QDP） chain and side-coupled Majorana bound states（MBSs） by usin...We investigate the quantum transport properties through a special kind of quantum dot（QD） system composed of a serially coupled multi-QD-pair（multi-QDP） chain and side-coupled Majorana bound states（MBSs） by using the Green functions method,where the conductance can be classified into two kinds：the electron tunneling（ET） conductance and the Andreev reflection（AR） one.First we find that for the nonzero MBS-QDP coupling a sharp AR-induced zero-bias conductance peak with the height of e^2/h is present（or absent） when the MBS is coupled to the far left（or the other） QDP.Moreover,the MBS-QDP coupling can suppress the ET conductance and strengthen the AR one,and further split into two sub-peaks each of the total conductance peaks of the isolated multi-QDPs,indicating that the MBS will make obvious influences on the competition between the ET and AR processes.Then we find that the tunneling rate ΓLis able to affect the conductances of leads L and R in different ways,demonstrating that there exists a ΓL-related competition between the AR and ET processes.Finally we consider the effect of the inter-MBS coupling on the conductances of the multi-QDP chains and it is shown that the inter-MBS coupling will split the zero-bias conductance peak with the height of e^2/h into two sub-peaks.As the inter-MBS coupling becomes stronger,the two sub-peaks are pushed away from each other and simultaneously become lower,which is opposite to that of the single QDP chain where the two sub-peaks with the height of about e^2/2h become higher.Also,the decay of the conductance sub-peaks with the increase of the MBS-QDP coupling becomes slower as the number of the QDPs becomes larger.This research should be an important extension in studying the transport properties in the kind of QD systems coupled with the side MBSs,which is helpful for understanding the nature of the MBSs,as well as the MBS-related QD transport properties.展开更多
基金This work was supported by the National Natural Science Foundations of China(Grant Nos.12275033,61973317,and 12274470)the Natural Science Foundation of Hunan Province for Distinguished Young Scholars(Grant No.2022JJ10070)+1 种基金the Natural Science Foundation of Hunan Province(Grant No.2022JJ30582)the Scientific Research Fund of Hunan Provincial Education Department(Grant No.20A025).
文摘We present an optimal and robust quantum control method for efficient population transfer in asymmetric double quantum-dot molecules.We derive a long-duration control scheme that allows for highly efficient population transfer by accurately controlling the amplitude of a narrow-bandwidth pulse.To overcome fluctuations in control field parameters,we employ a frequency-domain quantum optimal control theory method to optimize the spectral phase of a single pulse with broad bandwidth while preserving the spectral amplitude.It is shown that this spectral-phase-only optimization approach can successfully identify robust and optimal control fields,leading to efficient population transfer to the target state while concurrently suppressing population transfer to undesired states.The method demonstrates resilience to fluctuations in control field parameters,making it a promising approach for reliable and efficient population transfer in practical applications.
基金Project supported by the National Key R&D Program of China(Grant No.2016YFB0401503)the R&D Plan of Jiangsu Science and Technology Department,China(Grant No.BE2016173)
文摘A switchable autostereoscopic 3-dimensional(3D) display device with wide color gamut is introduced in this paper. In conjunction with a novel directional quantum-dot(QD) backlight, the precise scanning control strategy, and the eye-tracking system, this spatial-sequential solution enables our autostereoscopic display to combine all the advantages of full resolution,wide color gamut, low crosstalk, and switchable 2D/3D. And also, we fabricated an autostereoscopic display prototype and demonstrated its performances effectively. The results indicate that our system can both break the limitation of viewing position and provide high-quality 3D images. We present two working modes in this system. In the spatial-sequential mode,the crosstalk is about 6%. In the time-multiplexed mode, the viewer should wear auxiliary and the crosstalk is about 1%,just next to that of a commercial 3D display(BENQ XL2707-B and View Sonic VX2268 WM). Additionally, our system is also completely compatible with active shutter glasses and its 3D resolution is same as its 2D resolution. Because of the excellent properties of the QD material, the color gamut can be widely extended to 77.98% according to the ITU-R recommendation BT.2020(Rec.2020).
基金Project supported by the National Natural Science Foundation of China (Grant Nos.62035012,62074143,and 62004191)Zhejiang Lab (Grant No.2020LC0AD02)
文摘We report on the fabrication and characterization of InAs/GaAs chirped multilayer quantum-dot superluminescent diodes(CMQD-SLDs)with and without direct Si doping in QDs.It was found that both the output power and the spectral width of the CMQD-SLDs were significantly enhanced by direct Si doping in the QDs.The output power and spectral width have been increased by approximately 18.3%and 40%,respectively.Moreover,we shortened the cavity length of the doped CMQD-SLD and obtained a spectral width of 106 nm.In addition,the maximum output power and spectral width of the CMQD-SLD doped directly with Si can be further increased to 16.6 mW and 114 nm,respectively,through anti-reflection coating and device packaging.The device exhibited the smallest spectral dip of 0.2 dB when the spectrum was widest.The improved performances of the doped CMQD-SLD can be attributed to the direct doping of Si in the QDs,optimization of device structure and device packaging.
文摘We theoretically analyze the transient properties of a probe field absorption and dispersion in a coupled semiconductor double-quantum-dot nanostructure.We show that in the presence of the Gaussian laser beams,absorption and dispersion of the probe field can be dramatically influenced by the relative phase between applied fields and intensity of the Gaussian laser beams.Transient and steady-state behaviors of the probe field absorption and dispersion are discussed to estimate the required switching time.The estimated range is between 5-8 ps for subluminal to superluminal light propagation.
文摘To fill the continuous needs for faster processing elements with less power consumption causes large pressure on the complementary metal oxide semiconductor(CMOS)technology developers.The scaling scenario is not an option nowadays and other technologies need to be investigated.The quantum-dot cellular automata(QCA)technology is one of the important emerging nanotechnologies that have attracted much researchers’attention in recent years.This technology has many interesting features,such as high speed,low power consumption,and small size.These features make it an appropriate alternative to the CMOS technique.This paper suggests three novel structures of XNOR gates in the QCA technology.The presented structures do not follow the conventional approaches to the logic gates design but depend on the inherent capabilities of the new technology.The proposed structures are used as the main building blocks for a single-bit comparator.The resulted circuits are simulated for the verification purpose and then compared with existing counterparts in the literature.The comparison results are encouraging to append the proposed structures to the library of QCA gates.
文摘Quantum-dot cellular automata(QCA)is an emerging computational paradigm which can overcome scaling limitations of the existing complementary metal oxide semiconductor(CMOS)technology.The existence of defects cannot be ignored,considering the fabrication of QCA devices at the molecular level where it could alter the functionality.Therefore,defects in QCA devices need to be analyzed.So far,the simulation-based displacement defect analysis has been presented in the literature,which results in an increased demand in the corresponding mathematical model.In this paper,the displacement defect analysis of the QCA main primitive,majority voter(MV),is presented and carried out both in simulation and mathematics,where the kink energy based mathematical model is applied.The results demonstrate that this model is valid for the displacement defect in QCA MV.
基金Supported by the National Natural Foundation of China under Grant Nos 61204058 and 61021064the Natural Foundation of Guangdong Province under Grant No S2013010011833the Foundation of Shenzhen Innovation Program under Grant No JCYJ20130401095559823
文摘We report on the measurement of junction temperature of the InAs/InP（l00） quantum dot lasers working in the 1.55μm wavelength region. The measurement is based on analyzing the temperature induced mode shift of the Fabry-Perot cavity. Under pulsed operation mode, more than 20℃ junction temperature rise is measured for the quantum-dot （QD） laser when the duty cycle is increased from 1% to 95%. For a reference quantum well laser, the junction temperature rise is obtained as only around 3℃. The large junction temperature rise might be a crucial factor to improve the performance of QD lasers.
基金Project supported by the National Basic Research Program of China (Grant No. 2006CB604904)the National Natural Science Foundation of China (Grant Nos. 60976057, 61274072, and 60876086)
文摘With a chirped InAs/GaAs SML-QD （quantum dot） structure serving as the active region, the superluminescent diodes emitting at wavelength of around 970nm are fabricated. By using an active multimode interferometer configuration, these devices exhibit high continue-wave output powers from the narrow ridge waveguides. At continue-wave injection current of 800mA, an output power of 18.5mW, and the single Gaussian-like emission spectrum centered at 972nm with a full width at half maximum of 18nm are obtained.
基金supported by the State Key Development Program for Basic Research of China (Grant No 2003CB314901)the National Natural Science Foundation of China (Grant No 60644004)High School Innovation and Introducing Intellect Project of China (Grant No B07005)
文摘This paper presents a finite element method of calculating strain distributions in and around the self-organized GaN/AlN hexagonal quantum dots. The model is based on the continuum elastic theory, which is capable of treating a quantum dot with an arbitrary shape. A truncated hexagonal pyramid shaped quantum dot is adopted in this paper. The electronic energy levels of the GaN/AlN system are calculated by solving a three-dimension effective mass Shrodinger equation including a strain modified confinement potential and polarization effects. The calculations support the previous results published in the literature.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 11247028, 11147162, and 61106126)the Open Fund of Jiangsu Laboratory of Advanced Functional Materials, China (Grant No. 12KFJJ001)
文摘We propose a Rashba three-terminal double-quantum-dot device to generate a spin-polarized current and manipulate the electron spin in each quantum dot by utilizing the temperature gradient instead of the electric bias voltage. This device possesses a nonresonant tunneling channel and two resonant tunneling channels. The Keldysh nonequilibrium Green＇s function techniques are employed to determinate the spin-polarized current flowing from the electrodes and the spin accumulation in each quantum dot. We find that their signs and magnitudes are well controllable by the gate voltage or the temperature gradient. This result is attributed to the change in the slope of the transmission probability at the Fermi levels in the low-temperature region. Importantly, an obviously pure spin current can be injected into or extracted from one of the three electrodes by properly choosing the temperature gradient and the gate voltages. Therefore, the device can be used as an ideal thermal generator to produce a pure spin current and manipulate the electron spin in the quantum dot.
基金Project supported by the National Key Basic Research and Development Program of China (Grant No. 2006CB604904)the National Natural Science Foundation of China (Grant Nos. 60976057, 60876086, 60776037, and 10775106)
文摘A broadband tunable grating-coupled external cavity laser is realized by employing a self-assembled InAs/GaAs quantum-dot （QD） superluminescent diode （SLD） as the gain device. The SLD device is processed with a bent-waveguide structure and facet antireflection （AR） coating. Tuning bandwidths of 106 nm and 117 nm are achieved under a-A and 3.5-A injection currents, respectively. The large tuning range originates essentially from the broad gain spectrum of self-assembled QDs. The bent waveguide structure combined with the facet AR coating plays a role in suppressing the inner-cavity lasing under a large injection current.
基金supported by the Fundamental Research Funds for the Central Universities,China(Grant No.2013RC1205)the National Basic Research Program of China(Grant No.2010CB327601)
文摘The growth of GaAs epilayers on silicon substrates with multiple layers of InAs quantum dots（QDs） as dislocation filters by metalorganic chemical vapor deposition（MOCVD） is investigated in detail.The growth conditions of single and multiple layers of QDs used as dislocation filters in GaAs/Si epilayers are optimized.It is found that the insertion of a five-layer InAs QDs into the GaAs buffer layer effectively reduces the dislocation density of GaAs/Si film.Compared with the dislocation density of 5×10^7 cm^-2 in the GaAs/Si sample without QDs,a density of 2×10^6 cm^-2 is achieved in the sample with QD dislocation filters.
基金supported by the Sichuan Science and Technology Program under Grant No.2018JY0084
文摘The 1.55-μm quantum-dot (QD) micropillar cavities are strongly required as single photon sources (SPSs) for silica-fiber-based quantum information processing. Theoretical analysis shows that the adiabatic distributed Bragg reflector (DBR) structure may greatly improve the quality of a micropillar cavity. An InGaAsP/InP micropillar cavity is originally difficult, but it becomes more likely usable with inserted tapered (thickness decreased towards the center) distributed DBRs. Simulation turns out that, incorporating adiabatically tapered DBRs, a Si/SiO2- InP hybrid micropillar cavity, which enables weakly coupling InAs/InP quantum dots (QDs), can even well satisfy strong coupling at a smaller diameter. Certainly, not only the tapered structure, other adiabatic designs, e.g., both DBR layers getting thicker and one thicker one thinner, also improve the quality, reduce the diameter, and degrade the fabrication difficulty of Si/SiO2-InP hybrid micropillar cavities. Furthermore, the problem of the thin epitaxial semiconductor layer can also be greatly resolved by inserting adiabatic InGaAsP/InP DBRs. With tapered DBRs, the InGaAsP/InP-air-aperture micro-pillar cavity serves as an efficient, coherent, and monolithically producible 1.55-μm single-photon source (SPS). The adiabatic design is thus an effective way to obtain prospective candidates for 1.55-μm QD SPSs.
基金Project supported by the Natural Science Foundation of Liaoning Province, China (Grant No. 201202085)the National Natural Science Foundation of China(Grant No. 11004138)+1 种基金the Excellent Young Scientists Fund of Liaoning Provence, China (Grant No. LJQ2011020)the Young Scientists Fund of Shenyang Ligong University (Grant No. 2011QN-04-11)
文摘The spin-polarized linear conductance spectrum and current–voltage characteristics in a four-quantum-dot ring embodied into Aharonov–Bohm （AB） interferometer are investigated theoretically by considering a local Rashba spin–orbit interaction. It shows that the spin-polarized linear conductance and the corresponding spin polarization are each a function of magnetic flux phase at zero bias voltage with a period of 2π, and that Hubbard U cannot influence the electron transport properties in this case. When adjusting appropriately the structural parameter of inter-dot coupling and dot-lead coupling strength, the electronic spin polarization can reach a maximum value. Furthermore, by adjusting the bias voltages applied to the leads, the spin-up and spin-down currents move in opposite directions and pure spin current exists in the configuration space in appropriate situations. Based on the numerical results, such a model can be applied to the design of a spin filter device.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11574362,61210014,11374340,and 11474205)the Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission,China(Grant No.Z151100003515001)
文摘According to the well-established light-to-electricity conversion theory,resonant excited carriers in the quantum dots will relax to the ground states and cannot escape from the quantum dots to form photocurrent,which have been observed in quantum dots without a p–n junction at an external bias.Here,we experimentally observed more than 88% of the resonantly excited photo carriers escaping from In As quantum dots embedded in a short-circuited p–n junction to form photocurrent.The phenomenon cannot be explained by thermionic emission,tunneling process,and intermediate-band theories.A new mechanism is suggested that the photo carriers escape directly from the quantum dots to form photocurrent rather than relax to the ground state of quantum dots induced by a p–n junction.The finding is important for understanding the low-dimensional semiconductor physics and applications in solar cells and photodiode detectors.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61274101,51362031,and 11675023)the Innovation Development Fund of China Academy of Engineering Physics(CAEP)(Grant No.ZYCX1921-02)+2 种基金the Presidential Foundation of CAEP(Grant No.YZ2015014)the Initial Project of University of Electronic Science and Technology of China,Zhongshan Institute(Grant No.415YKQ02)Science and Technology Bureau of Zhongshan,China(Grant Nos.417S26 and 180809162197886)
文摘We study the spin-dependent thermopower in a double-quantum-dot(DQD) embedded between the left and right two-dimensional electron gases(2DEGs) in doped quantum wells under an in-plane magnetic field. When the separation between the DQD is smaller than the Fermi wavelength in the 2DEGs, the asymmetry in the dots' energy levels leads to pronounced quantum interference effects characterized by the Dicke line-shape of the conductance, which are sensitive to the properties of the 2DEGs. The magnitude of the thermopower, which denotes the generated voltage in response to an infinitesimal temperature difference between the two 2DEGs under vanishing charge current, will be obviously enhanced by the Dicke effect. The application of the in-plane magnetic field results in the polarization of the spin-up and spin-down conductances and thermopowers, and enables an efficient spin-filter device in addition to a tunable pure spin thermopower in the absence of its charge counterpart.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 10774094 and 10775091)National Fundamental Fund of Personnel Training (Grant No. J0730317)Natural Science Foundation of Shanxi Province of China (GrantNo. 2009011001-1)
文摘Using the tight-binding approximation and the transfer matrix method, this paper studies the electronic transport properties through a periodic array of quantum-dot （QD） rings threaded by a magnetic flux. It demonstrates that the even^odd parity of the QD number in a single ring and the number of the QD rings in the array play a crucial role in the electron transmission. For a single QD ring, the resonance and antiresonance transmission depend not only on the applied magnetic flux but also on the difference between the number of QDs on the two arms of the ring. For an array of QD rings, the transmission properties are related not only to the even-odd parity of the number No of QDs in the single ring but also to the even-odd parity of the ring number N in the array. When the incident electron energy is aligned with the site energy, for the array of N rings with No = odd the antiresonance transmission cannot occur but the resonance transmission may occur and the transmission spectrum has N resonance peaks （N - 1 resonance peaks） in a period for N = odd （for N = even）. For the array of N rings with No = even the transmission properties depend on the flux threading the ring and the QD number on one arm of the ring. These results may be helpful in designing QD devices.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61176089 and 10974043)the Natural Science Foundation of Hebei Province,China(Grant Nos.A2011205092 and 2014205005)the Fund for Hebei Normal University for Nationalities,China(Grant No.201109)
文摘Andreev reflection （AR） in a normal-metal/quantum-dot/superconductor （N-QD-S） system with coupled Majorana bound states （MBSs） is investigated theoretically. We find that in the N--QD-S system, the AR can be enhanced when coupling to the MBSs is incorporated. Fano line-shapes can be observed in the AR conductance spectrum when there is an appropriate QD-MBS coupling or MBS-MBS coupling. The AR conductance is always e2/2h at the zero Fermi energy point when only QD--MBSs coupling is considered. In addition, the resonant AR occurs when the MBS-MBS coupling roughly equals to the QD energy level. We also find that an AR antiresonance appears when the QD energy level approximately equals to the sum of the QD-MBS coupling and the MBS-MBS coupling. These features may serve as characteristic signatures for the probe of MBSs.
基金Project supported by the National Natural Science Foundation of China(Grant No.61274072)the National High Technology Research and Development Program of China(Grant No.2013AA014201)
文摘A wide wavelength tuning range swept external-cavity laser using an In As/Ga As quantum-dot superluminescent diode as a gain device is demonstrated. The tunable filter consists of a polygon scanner and a grating in Littrow telescope-less configuration. The swept laser generates greater than 54-m W peak output power and up to 33-k Hz sweep rate with a sweep range of 150 nm centered at 1155 nm. The effects of injection current and sweep rate on the sweep performance of the swept laser are studied.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11274040 and 10974015)the Program for New Century Excellent Talents in University of China(Grant No.NCET-08-0044)
文摘We investigate the quantum transport properties through a special kind of quantum dot（QD） system composed of a serially coupled multi-QD-pair（multi-QDP） chain and side-coupled Majorana bound states（MBSs） by using the Green functions method,where the conductance can be classified into two kinds：the electron tunneling（ET） conductance and the Andreev reflection（AR） one.First we find that for the nonzero MBS-QDP coupling a sharp AR-induced zero-bias conductance peak with the height of e^2/h is present（or absent） when the MBS is coupled to the far left（or the other） QDP.Moreover,the MBS-QDP coupling can suppress the ET conductance and strengthen the AR one,and further split into two sub-peaks each of the total conductance peaks of the isolated multi-QDPs,indicating that the MBS will make obvious influences on the competition between the ET and AR processes.Then we find that the tunneling rate ΓLis able to affect the conductances of leads L and R in different ways,demonstrating that there exists a ΓL-related competition between the AR and ET processes.Finally we consider the effect of the inter-MBS coupling on the conductances of the multi-QDP chains and it is shown that the inter-MBS coupling will split the zero-bias conductance peak with the height of e^2/h into two sub-peaks.As the inter-MBS coupling becomes stronger,the two sub-peaks are pushed away from each other and simultaneously become lower,which is opposite to that of the single QDP chain where the two sub-peaks with the height of about e^2/2h become higher.Also,the decay of the conductance sub-peaks with the increase of the MBS-QDP coupling becomes slower as the number of the QDPs becomes larger.This research should be an important extension in studying the transport properties in the kind of QD systems coupled with the side MBSs,which is helpful for understanding the nature of the MBSs,as well as the MBS-related QD transport properties.
