The characteristics of high pressure sulphur hexafluoride（SF6） discharges in a highly non-uniform electric field under repetitive nanosecond pulses are investigated in this paper.The influencing factors on discharge...The characteristics of high pressure sulphur hexafluoride（SF6） discharges in a highly non-uniform electric field under repetitive nanosecond pulses are investigated in this paper.The influencing factors on discharge process,such as gas pressure,pulse repetition frequency（PRF）,and number of applied pulses,are analyzed.Experimental results show that the corona intensity weakens with the increase of gas pressure and strengthens with the increase of PRF or number of applied pulses.Spark discharge images suggest that a shorter and thicker discharge plasma channel will lead to a larger discharge current.The number of applied pulses to breakdown descends with the increase of PRF and ascends with the rise of gas pressure.The reduced electric field（E/p） decreases with the increase of PRF in all circumstances.The experimental results provide significant supplements to the dielectric characteristics of strongly electronegative gases under repetitive nanosecond pulses.展开更多
In the present paper we conduct a theoretical study of the thermal accumulation effect of a typical bipolar transistor caused by high power pulsed microwaves（HPMs）,and investigate the thermal accumulation effect as ...In the present paper we conduct a theoretical study of the thermal accumulation effect of a typical bipolar transistor caused by high power pulsed microwaves（HPMs）,and investigate the thermal accumulation effect as a function of pulse repetition frequency（PRF） and duty cycle.A study of the damage mechanism of the device is carried out from the variation analysis of the distribution of the electric field and the current density.The result shows that the accumulation temperature increases with PRF increasing and the threshold for the transistor is about 2 kHz.The response of the peak temperature induced by the injected single pulses indicates that the falling time is much longer than the rising time.Adopting the fitting method,the relationship between the peak temperature and the time during the rising edge and that between the peak temperature and the time during the falling edge are obtained.Moreover,the accumulation temperature decreases with duty cycle increasing for a certain mean power.展开更多
Dielectric barrier discharge （DBD） excitated by pulsed power is a promising method for producing nonthermal plasma at atmospheric pressure. Discharge characteristic in a DBD with salt water as electrodes by a home-m...Dielectric barrier discharge （DBD） excitated by pulsed power is a promising method for producing nonthermal plasma at atmospheric pressure. Discharge characteristic in a DBD with salt water as electrodes by a home-made unipolar nanosecond-pulse power source is presented in this paper. The generator is capable of providing repetitive pulses with the voltage up to 30 kV and duration of 70 ns at a 300 Ω resistive load. Applied voltage and discharge current are measured under various experimental conditions. The DBD created between two liquid electrodes shows that the discharge is homogeneous and diffuse in the whole discharge regime, Spectra diagnosis is conducted by an optical emission spectroscopy. The air plasma has strong emission from nitrogen species below 400 nm, notably the nitrogen second positive system.展开更多
The latch-up effect induced by high-power microwave（HPM） in complementary metal–oxide–semiconductor（CMOS） inverter is investigated in simulation and theory in this paper. The physical mechanisms of excess carrie...The latch-up effect induced by high-power microwave（HPM） in complementary metal–oxide–semiconductor（CMOS） inverter is investigated in simulation and theory in this paper. The physical mechanisms of excess carrier injection and HPM-induced latch-up are proposed. Analysis on upset characteristic under pulsed wave reveals increasing susceptibility under shorter-width pulsed wave which satisfies experimental data, and the dependence of upset threshold on pulse repetitive frequency（PRF） is believed to be due to the accumulation of excess carriers. Moreover, the trend that HPMinduced latch-up is more likely to happen in shallow-well device is proposed.Finally, the process of self-recovery which is ever-reported in experiment with its correlation with supply voltage and power level is elaborated, and the conclusions are consistent with reported experimental results.展开更多
基金supported by the National Basic Research Program of China(973 Program)(No.2011CB209405)National Natural Science Foundation of China(No.51207154)the Opening Project of State Key Laboratory of Electrical Insulation and Power Equipment in Xi'an Jiaotong University of China(No.EIPE12204)
文摘The characteristics of high pressure sulphur hexafluoride（SF6） discharges in a highly non-uniform electric field under repetitive nanosecond pulses are investigated in this paper.The influencing factors on discharge process,such as gas pressure,pulse repetition frequency（PRF）,and number of applied pulses,are analyzed.Experimental results show that the corona intensity weakens with the increase of gas pressure and strengthens with the increase of PRF or number of applied pulses.Spark discharge images suggest that a shorter and thicker discharge plasma channel will lead to a larger discharge current.The number of applied pulses to breakdown descends with the increase of PRF and ascends with the rise of gas pressure.The reduced electric field（E/p） decreases with the increase of PRF in all circumstances.The experimental results provide significant supplements to the dielectric characteristics of strongly electronegative gases under repetitive nanosecond pulses.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60776034)
文摘In the present paper we conduct a theoretical study of the thermal accumulation effect of a typical bipolar transistor caused by high power pulsed microwaves（HPMs）,and investigate the thermal accumulation effect as a function of pulse repetition frequency（PRF） and duty cycle.A study of the damage mechanism of the device is carried out from the variation analysis of the distribution of the electric field and the current density.The result shows that the accumulation temperature increases with PRF increasing and the threshold for the transistor is about 2 kHz.The response of the peak temperature induced by the injected single pulses indicates that the falling time is much longer than the rising time.Adopting the fitting method,the relationship between the peak temperature and the time during the rising edge and that between the peak temperature and the time during the falling edge are obtained.Moreover,the accumulation temperature decreases with duty cycle increasing for a certain mean power.
基金supported by National Natural Science Foundation of China(Nos.11076026,50707032)the Knowledge Innovation Program of the Chinese Academy of Sciences(No.KGCX2-YW-339)Opening Project of State Key Laboratory of Polymer Materials Engineering in Sichuan University(No.KF201103)
文摘Dielectric barrier discharge （DBD） excitated by pulsed power is a promising method for producing nonthermal plasma at atmospheric pressure. Discharge characteristic in a DBD with salt water as electrodes by a home-made unipolar nanosecond-pulse power source is presented in this paper. The generator is capable of providing repetitive pulses with the voltage up to 30 kV and duration of 70 ns at a 300 Ω resistive load. Applied voltage and discharge current are measured under various experimental conditions. The DBD created between two liquid electrodes shows that the discharge is homogeneous and diffuse in the whole discharge regime, Spectra diagnosis is conducted by an optical emission spectroscopy. The air plasma has strong emission from nitrogen species below 400 nm, notably the nitrogen second positive system.
基金Project supported by the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology,China Academy of Engineering Physics(Grant No.2015-0214.XY.K)
文摘The latch-up effect induced by high-power microwave（HPM） in complementary metal–oxide–semiconductor（CMOS） inverter is investigated in simulation and theory in this paper. The physical mechanisms of excess carrier injection and HPM-induced latch-up are proposed. Analysis on upset characteristic under pulsed wave reveals increasing susceptibility under shorter-width pulsed wave which satisfies experimental data, and the dependence of upset threshold on pulse repetitive frequency（PRF） is believed to be due to the accumulation of excess carriers. Moreover, the trend that HPMinduced latch-up is more likely to happen in shallow-well device is proposed.Finally, the process of self-recovery which is ever-reported in experiment with its correlation with supply voltage and power level is elaborated, and the conclusions are consistent with reported experimental results.
