The damage effect characteristics of GaAs pseudomorphic high electron mobility transistor(pHEMT)under the irradiation of C band high-power microwave(HPM)is investigated in this paper.Based on the theoretical analysis,...The damage effect characteristics of GaAs pseudomorphic high electron mobility transistor(pHEMT)under the irradiation of C band high-power microwave(HPM)is investigated in this paper.Based on the theoretical analysis,the thermoelectric coupling model is established,and the key damage parameters of the device under typical pulse conditions are predicted,including the damage location,damage power,etc.By the injection effect test and device microanatomy analysis through using scanning electron microscope(SEM)and energy dispersive spectrometer(EDS),it is concluded that the gate metal in the first stage of the device is the vulnerable to HPM damage,especially the side below the gate near the source.The damage power in the injection test is about 40 dBm and in good agreement with the simulation result.This work has a certain reference value for microwave damage assessment of pHEMT.展开更多
By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimi...By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency （PAE） of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads.展开更多
基金Project supported by the Foundation Enhancement Planthe National Natural Science Foundation of China (Grant No. 61974116)
文摘The damage effect characteristics of GaAs pseudomorphic high electron mobility transistor(pHEMT)under the irradiation of C band high-power microwave(HPM)is investigated in this paper.Based on the theoretical analysis,the thermoelectric coupling model is established,and the key damage parameters of the device under typical pulse conditions are predicted,including the damage location,damage power,etc.By the injection effect test and device microanatomy analysis through using scanning electron microscope(SEM)and energy dispersive spectrometer(EDS),it is concluded that the gate metal in the first stage of the device is the vulnerable to HPM damage,especially the side below the gate near the source.The damage power in the injection test is about 40 dBm and in good agreement with the simulation result.This work has a certain reference value for microwave damage assessment of pHEMT.
基金supported by the Innovation Fund of State Key Lab of Millimeter Waves
文摘By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency （PAE） of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads.
