Based on Peltier effect,Bi_(2)Te_(3)-based alloy is widely used in commercial solid-state refrigeration at room temperature.The mainstream strategies for enhancing room-temperature thermoelectric performance in Bi_(2)...Based on Peltier effect,Bi_(2)Te_(3)-based alloy is widely used in commercial solid-state refrigeration at room temperature.The mainstream strategies for enhancing room-temperature thermoelectric performance in Bi_(2)Te_(3)focus on band and microstructure engineering.However,a clear understanding of the modulation of band structure and scattering through such engineering remains still challenging,because the minority carriers compensate partially the overall transport properties for the narrow-gap Bi_(2)Te_(3)at room temperature(known as the bipolar effect).The purpose of this work is to model the transport properties near and far away from the bipolar effect region for Bi_(2)Te_(3)-based thermoelectric material by a two-band model taking contributions of both majority and minority carriers into account.This is endowed by shifting the Fermi level from the conduction band to the valence band during the modeling.A large amount of data of Bi_(2)Te_(3)-based materials is collected from various studies for the comparison between experimental and predicted properties.The fundamental parameters,such as the density of states effective masses and deformation potential coefficients,of Bi_(2)Te_(3)-based materials are quantified.The analysis can help find out the impact factors(e.g.the mobility ratio between conduction and valence bands)for the improvement of thermoelectric properties for Bi_(2)Te_(3)-based alloys.This work provides a convenient tool for analyzing and predicting the transport performance even in the presence of bipolar effect,which can facilitate the development of the narrow-gap thermoelectric semiconductors.展开更多
In order to reduce the oxidizing and volatilizing caused by Mg element in the traditional methods for synthesizing Mg2Sil-xSnx （x=0.2, 0.4, 0.6, 0.8） solid solutions, microwave irradiation techniques were used in pr...In order to reduce the oxidizing and volatilizing caused by Mg element in the traditional methods for synthesizing Mg2Sil-xSnx （x=0.2, 0.4, 0.6, 0.8） solid solutions, microwave irradiation techniques were used in preparing them as thermoelectric materials. Structure and phase composition of the obtained materials were investigated by X-ray diffraction （XRD）. The electrical conductivity, Seebeck coefficient and thermal conductivity were measured as a function of temperature from 300 to 750 K. It is found that Mg2Si1-xSnx solid solutions are well formed with excessive content of 5% （molar fraction） Mg from the stoichiometric MgESil.xSnx under microwave irradiation. A maximum dimensionless figure of merit, ZT, of about 0.26 is obtained for Mg2Si1-xSnx solid solutions at about 500 K for x=0.6.展开更多
基金National Natural Science Foundation of China(T2125008,92263108,92163203,52102292,52003198)Shanghai Rising-Star Program(23QA1409300)Innovation Program of Shanghai Municipal Education Commission(2021-01-07-00-07-E00096)。
文摘Based on Peltier effect,Bi_(2)Te_(3)-based alloy is widely used in commercial solid-state refrigeration at room temperature.The mainstream strategies for enhancing room-temperature thermoelectric performance in Bi_(2)Te_(3)focus on band and microstructure engineering.However,a clear understanding of the modulation of band structure and scattering through such engineering remains still challenging,because the minority carriers compensate partially the overall transport properties for the narrow-gap Bi_(2)Te_(3)at room temperature(known as the bipolar effect).The purpose of this work is to model the transport properties near and far away from the bipolar effect region for Bi_(2)Te_(3)-based thermoelectric material by a two-band model taking contributions of both majority and minority carriers into account.This is endowed by shifting the Fermi level from the conduction band to the valence band during the modeling.A large amount of data of Bi_(2)Te_(3)-based materials is collected from various studies for the comparison between experimental and predicted properties.The fundamental parameters,such as the density of states effective masses and deformation potential coefficients,of Bi_(2)Te_(3)-based materials are quantified.The analysis can help find out the impact factors(e.g.the mobility ratio between conduction and valence bands)for the improvement of thermoelectric properties for Bi_(2)Te_(3)-based alloys.This work provides a convenient tool for analyzing and predicting the transport performance even in the presence of bipolar effect,which can facilitate the development of the narrow-gap thermoelectric semiconductors.
基金Project(2009BB4228) supported by the Natural Science Foundation of Chongqing City,ChinaProject(CK2010Z09) supported by the Research Foundation of Chongqing University of Science and Technology,China
文摘In order to reduce the oxidizing and volatilizing caused by Mg element in the traditional methods for synthesizing Mg2Sil-xSnx （x=0.2, 0.4, 0.6, 0.8） solid solutions, microwave irradiation techniques were used in preparing them as thermoelectric materials. Structure and phase composition of the obtained materials were investigated by X-ray diffraction （XRD）. The electrical conductivity, Seebeck coefficient and thermal conductivity were measured as a function of temperature from 300 to 750 K. It is found that Mg2Si1-xSnx solid solutions are well formed with excessive content of 5% （molar fraction） Mg from the stoichiometric MgESil.xSnx under microwave irradiation. A maximum dimensionless figure of merit, ZT, of about 0.26 is obtained for Mg2Si1-xSnx solid solutions at about 500 K for x=0.6.
