Multi-element array photoelectric detector is the core devices to form a photoelectric detection target with a large field of view.This photoelectric detection target brings about the problem of uneven detection sensi...Multi-element array photoelectric detector is the core devices to form a photoelectric detection target with a large field of view.This photoelectric detection target brings about the problem of uneven detection sensitivity distribution in the detection screen.To improve the uneven detection sensitivity of this photoelectric detection target,this paper analyzes the distribution law of the uneven detection sensitivity of the photoelectric detection target using the multi-element array photoelectric detector,dissects the main factors affecting the detection sensitivity according to the photoelectric detection principle,establishes the calculation model of detection sensitivity of the photoelectric detection target in the different detection areas and proposes a method to improve the detection sensitivity by compensating the gain of each unit photoelectric detector.The analysis of simulation and experimental results show that the proposed method of photoelectric detection target can effectively improve the output signal amplitude of the projectile under the certain detection distance,in particular,the output signal amplitude of the projectile is significantly increased when the projectile passes through the detection blind area.The experimental results are consistent with the simulation results,which verify the effectiveness of the proposed improvement method.展开更多
To enhance the avalanche ionization, we designed a new separate absorption and multiplication AlGaN solarblind avalanche photodiode （APD） by using a high/low-Al-content AlGaN heterostructure as the multiplication re...To enhance the avalanche ionization, we designed a new separate absorption and multiplication AlGaN solarblind avalanche photodiode （APD） by using a high/low-Al-content AlGaN heterostructure as the multiplication region instead of the conventional AlGaN homogeneous layer. The calculated results show that the designed APD with Al0.3Ga0.7N/Al0.45Ga0.55N heterostructure multiplication region exhibits a 60% higher gain than the conventional APD and a smaller avalanche breakdown voltage due to the use of the low-Al-content Al0.3Ga0.7N which has about a six times higher hole ionization coefficient than the high-Al-content Al0.45Ga0.55N. Meanwhile, the designed APD still remains a good solar-blind characteristic by introducing a quarter-wave A1GaN/A1N distributed Bragg reflectors structure at the bottom of the device.展开更多
基金supported by Project of the Xi’an Science and Technology Innovation talent service enterprise project(No.2020KJRC0041)National Natural Science Foundation of China(No.62073256)Key Programs of Shaanxi Science and Technology Department(No.2020GY-125)。
文摘Multi-element array photoelectric detector is the core devices to form a photoelectric detection target with a large field of view.This photoelectric detection target brings about the problem of uneven detection sensitivity distribution in the detection screen.To improve the uneven detection sensitivity of this photoelectric detection target,this paper analyzes the distribution law of the uneven detection sensitivity of the photoelectric detection target using the multi-element array photoelectric detector,dissects the main factors affecting the detection sensitivity according to the photoelectric detection principle,establishes the calculation model of detection sensitivity of the photoelectric detection target in the different detection areas and proposes a method to improve the detection sensitivity by compensating the gain of each unit photoelectric detector.The analysis of simulation and experimental results show that the proposed method of photoelectric detection target can effectively improve the output signal amplitude of the projectile under the certain detection distance,in particular,the output signal amplitude of the projectile is significantly increased when the projectile passes through the detection blind area.The experimental results are consistent with the simulation results,which verify the effectiveness of the proposed improvement method.
基金Project supported by the State Key Project of Research and Development Plan,China(Grant No.2016YFB0400903)the National Natural Science Foundation of China(Grant Nos.61634002,61274075,and 61474060)+2 种基金the Key Project of Jiangsu Province,China(Grant No.BE2016174)the Anhui University Natural Science Research Project,China(Grant No.KJ2015A153)the Open Fund(KFS)of State Key Lab of Optical Technologieson Nanofabrication and Microengineering,Institute of Optics and Electronics,Chinese Academy of Science
文摘To enhance the avalanche ionization, we designed a new separate absorption and multiplication AlGaN solarblind avalanche photodiode （APD） by using a high/low-Al-content AlGaN heterostructure as the multiplication region instead of the conventional AlGaN homogeneous layer. The calculated results show that the designed APD with Al0.3Ga0.7N/Al0.45Ga0.55N heterostructure multiplication region exhibits a 60% higher gain than the conventional APD and a smaller avalanche breakdown voltage due to the use of the low-Al-content Al0.3Ga0.7N which has about a six times higher hole ionization coefficient than the high-Al-content Al0.45Ga0.55N. Meanwhile, the designed APD still remains a good solar-blind characteristic by introducing a quarter-wave A1GaN/A1N distributed Bragg reflectors structure at the bottom of the device.
