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Modeling Approach and Analysis of the Structural Parameters of an Inductively Coupled Plasma Etcher Based on a Regression Orthogonal Design 被引量:3
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作者 程嘉 朱煜 季林红 《Plasma Science and Technology》 SCIE EI CAS CSCD 2012年第12期1059-1068,共10页
The geometry of an inductively coupled plasma (ICP) etcher is usually considered to be an important factor for determining both plasma and process uniformity over a large wafer. During the past few decades, these pa... The geometry of an inductively coupled plasma (ICP) etcher is usually considered to be an important factor for determining both plasma and process uniformity over a large wafer. During the past few decades, these parameters were determined by the "trial and error" method, resulting in wastes of time and funds. In this paper, a new approach of regression orthogonal design with plasma simulation experiments is proposed to investigate the sensitivity of the structural parameters on the uniformity of plasma characteristics. The tool for simulating plasma is CFD-ACE+, which is commercial multi-physical modeling software that has been proven to be accurate for plasma simulation. The simulated experimental results are analyzed to get a regression equation on three structural parameters. Through this equation, engineers can compute the uniformity of the electron number density rapidly without modeling by CFD-ACE+. An optimization performed at the end produces good results. 展开更多
关键词 fluid model inductively coupled plasma regression orthogonal structural parameters design of experiment
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