Organic solar cells(OSCs)have gained conspicuous progress during the past few decades due to the development of materials and upgrading of the device structure.The power conversion efficiency(PCE)of the single-junctio...Organic solar cells(OSCs)have gained conspicuous progress during the past few decades due to the development of materials and upgrading of the device structure.The power conversion efficiency(PCE)of the single-junction device had surpassed 19%.The cathode interface layer(CIL),by optimizing the connection between the active layer and the cathode electrode,has become a momentous part to strengthen the performances of the OSCs.Simultaneously,CIL is also indispensable to illustrating the working mechanism of OSCs and enhancing the stability of the OSCs.In this essay,hybrid CILs in OSCs have been summarized.Firstly,the advancement and operating mechanism of OSCs,and the effects and relevant design rules of CIL are briefly concluded;secondly,the significant influence of CIL on enhancing the stability and PCE of OSCs is presented;thirdly,the characteristics of organic hybrid CIL and organic-inorganic hybrid CIL are introduced.Finally,the conclusion and outlook of CIL are summarized.展开更多
Polymer-based composite electrolytes composed of three-dimensional Li_(6.4)La_(3)Zr_(2)Al_(0.2)O_(12)(3D-LLZAO)have attracted increasing attention due to their continuous ion conduction and satisfactory mechanical pro...Polymer-based composite electrolytes composed of three-dimensional Li_(6.4)La_(3)Zr_(2)Al_(0.2)O_(12)(3D-LLZAO)have attracted increasing attention due to their continuous ion conduction and satisfactory mechanical properties.However,the organic/inorganic interface is incompatible,resulting in slow lithium-ion transport at the interface.Therefore,the compatibility of organic/inorganic interface is an urgent problem to be solved.Inspired by the concept of“gecko eaves”,polymer-based composite solid electrolytes with dense interface structures were designed.The bridging of organic/inorganic interfaces was established by introducing silane coupling agent(3-chloropropyl)trimethoxysilane(CTMS)into the PEO-3D-LLZAO(PL)electrolyte.The in-situ coupling reaction improves the interface affinity,strengthens the organic/inorganic interaction,reduces the interface resistance,and thus achieves an efficient interface ion transport network.The prepared PEO-3D-LLZAO-CTMS(PLC)electrolyte exhibits enhanced ionic conductivity of 6.04×10^(-4)S cm^(-1)and high ion migration number(0.61)at 60℃and broadens the electrochemical window(5.1 V).At the same time,the PLC electrolyte has good thermal stability and high mechanical properties.Moreover,the Li Fe PO_(4)|PLC|Li battery has excellent rate performance and cycling stability with a capacity decay rate of 2.2%after 100 cycles at 60℃and 0.1 C.These advantages of PLC membranes indicate that this design approach is indeed practical,and the in-situ coupling method provides a new approach to address interface compatibility issues.展开更多
Focusing on the low open circuit voltage(V_(OC))and fill factor(FF)in flexible Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)solar cells,indium(In)ions are introduced into the CZTSSe absorbers near Mo foils to modify the back interface...Focusing on the low open circuit voltage(V_(OC))and fill factor(FF)in flexible Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)solar cells,indium(In)ions are introduced into the CZTSSe absorbers near Mo foils to modify the back interface and passivate deep level defects in CZTSSe bulk concurrently for improving the performance of flexible device.The results show that In doping effectively inhibits the formation of secondary phase(Cu(S,Se)_(2))and VSndefects.Further studies demonstrate that the barrier height at the back interface is decreased and the deep level defects(Cu_(Sn)defects)in CZTSSe bulk are passivated.Moreover,the carrier concentration is increased and the V_(OC) deficit(V_(OC,def))is decreased significantly due to In doping.Finally,the flexible CZTSSe solar cell with 10.01%power conversion efficiency(PCE)has been obtained.The synergistic strategy of interface modification and bulk defects passivation through In incorporation provides a new thought for the fabrication of efficient flexible kesterite-based solar cells.展开更多
The yttria-stabilized zirconia(YSZ)is a famous thermal barrier coating material to protect hot-end components of an engine.As a characteristic feature of the YSZ,the surface roughness shall play an important role in t...The yttria-stabilized zirconia(YSZ)is a famous thermal barrier coating material to protect hot-end components of an engine.As a characteristic feature of the YSZ,the surface roughness shall play an important role in the interface thermal conductance between the YSZ and gas,considering that the gas is typically at an extremely high temperature.We investigate the effect of the surface roughness on the thermal conductance of the YSZ-gas interface with surface roughness described by nanoscale pores on the surface of the YSZ.We reveal two competitive mechanisms related to the microstructure of the pore,i.e.,the actual contact area effect and the confinement effect.The increase of the pore depth will enlarge the actual contact area between the YSZ and gas,leading to enhancement of the solid-gas interface thermal conductance.In contrast to the positive actual contact area effect,the geometry-induced confinement effect greatly reduces the interface thermal conductance.These findings shall offer some fundamental understandings for the microscopic mechanisms of the YSZ-gas interface thermal conductance.展开更多
One-dimensional(1D)micro/nanowires of wide band gap semiconductors have become one of the most promising blocks of high-performance photodetectors.However,in the axial direction of micro/nanowires,the carriers can tra...One-dimensional(1D)micro/nanowires of wide band gap semiconductors have become one of the most promising blocks of high-performance photodetectors.However,in the axial direction of micro/nanowires,the carriers can transport freely driven by an external electric field,which usually produces large dark current and low detectivity.Here,an UV photodetector built from three cross-intersecting ZnO microwires with double homo-interfaces is demonstrated by the chemical vapor deposition and physical transfer techniques.Compared with the reference device without interface,the dark current of this ZnO double-interface photodetector is significantly reduced by nearly 5 orders of magnitude,while the responsivity decreases slightly,thereby greatly improving the normalized photocurrent-to-dark current ratio.In addition,ZnO double-interface photodetector exhibits a much faster response speed(~0.65 s)than the no-interface device(~95 s).The improved performance is attributed to the potential barriers at the microwire-microwire homo-interfaces,which can regulate the carrier transport.Our findings in this work provide a promising approach for the design and development of high-performance photodetectors.展开更多
For the further improvement of the power conversion efficiency(PCE)and stability of perovskite solar cells(PSCs),the buried interface between the perovskite and the electron transport layer is crucial.However,it is ch...For the further improvement of the power conversion efficiency(PCE)and stability of perovskite solar cells(PSCs),the buried interface between the perovskite and the electron transport layer is crucial.However,it is challenging to effectively optimize this interface as it is buried beneath the perovskite film.Herein,we have designed and synthesized a series of multifunctional organic-inorganic(OI)complexes as buried interfacial material to promote electron extraction,as well as the crystal growth of the perovskite.The OI complex with BF4−group not only eliminates oxygen vacancies on the SnO_(2) surface but also balances energy level alignment between SnO_(2) and perovskite,providing a favorable environment for charge carrier extraction.Moreover,OI complex with amine(−NH_(2))functional group can regulate the crystallization of the perovskite film via interaction with PbI2,resulting in highly crystallized perovskite film with large grains and low defect density.Consequently,with rational molecular design,the PSCs with optimal OI complex buried interface layer which contains both BF4−and−NH_(2) functional groups yield a champion device efficiency of 23.69%.More importantly,the resulting unencapsulated device performs excellent ambient stability,maintaining over 90%of its initial efficiency after 2000 h storage,and excellent light stability of 91.5%remaining PCE in the maximum power point tracking measurement(under continuous 100 mW cm−2 light illumination in N2 atmosphere)after 500 h.展开更多
Co-sputtered AlxNiy thin films were used as diffusion barriers between aluminum and hydrogenated microcrystalline silicon （μc-Si：H） for flexible thin film solar cells. The stoichiometric ratio of AlxNiy showed a s...Co-sputtered AlxNiy thin films were used as diffusion barriers between aluminum and hydrogenated microcrystalline silicon （μc-Si：H） for flexible thin film solar cells. The stoichiometric ratio of AlxNiy showed a significant effect on the structures of the films. The obtained Al3Ni2 film was amorphous, while polycrystalline films were obtained when the ratio of aluminum to nickel was 1：1 and 2：3. An auger electron spectroscope and four-point probe system were applied to test the resistance to the interdiffusion between aluminum and silicon, as well as the conductivities of the AlxNiy barriers. The data of auger depth profile showed that the content of silicon was the minimum in the aluminum layer after sputtering for 4 min using AlNi thin film as the barrier layer. Compared to other AlxNiy alloys, the AlNi thin film possessed the lowest sheet resistance.展开更多
The capacitance-voltage（C-V） characteristic of the TiW/p-InP Schottky barrier diodes（SBDs） is analyzed considering the effects of the interface state（N（ss））, series resistance（Rs）, and deep level defects. Th...The capacitance-voltage（C-V） characteristic of the TiW/p-InP Schottky barrier diodes（SBDs） is analyzed considering the effects of the interface state（N（ss））, series resistance（Rs）, and deep level defects. The C-V of the Schottky contact is modeled based on the physical mechanism of the interfacial state and series resistance effect. The fitting coefficients α andβ are used to reflect the N（ss） and Rs on the C-V characteristics, respectively. The α decreases with the increase of frequency,while β increases with the increase of frequency. The capacitance increases with the increase of α and the decrease of β.From our model, the peak capacitance and its position can be estimated. The experimental value is found to be larger than the calculated one at the lower voltage. This phenomenon can be explained by the effect of deep level defects.展开更多
Vertical GaN Schottky barrier diodes with Ti N anodes were fabricated to investigate the electrical performance. The turn-on voltage and specific on-resistance of diodes are deduced to be approximately 0.41 V and 0.98...Vertical GaN Schottky barrier diodes with Ti N anodes were fabricated to investigate the electrical performance. The turn-on voltage and specific on-resistance of diodes are deduced to be approximately 0.41 V and 0.98 mΩ·cm2, respectively.The current-voltage curves show rectifying characteristics under different temperatures from 25℃ to 200℃, implying a good thermal stability of Ti N/Ga N contact. The low-frequency noise follows a 1/f behavior due to the multiple traps and/or barrier inhomogeneous at Ti N/Ga N interface. The trapping/de-trapping between traps and Fermi level causes the slight capacitance dispersion under reverse voltage.展开更多
基金supported by the National Natural Science Foundation of China(52263017,21965023,52173170,51973087,and22065025)the Science Fund for Distinguished Young Scholars of Jiangxi Province(20212ACB214009)+2 种基金the Natural Science Foundation of Jiangxi Province(20212ACB203010,20224BAB214007 and20212BAB204052)the Training Project of High-level and Highskilled Leading Talents of Jiangxi Province(2023)the Thousand Talents Plan of Jiangxi Province(jxsq2019201004 and jxsq2020101068)。
文摘Organic solar cells(OSCs)have gained conspicuous progress during the past few decades due to the development of materials and upgrading of the device structure.The power conversion efficiency(PCE)of the single-junction device had surpassed 19%.The cathode interface layer(CIL),by optimizing the connection between the active layer and the cathode electrode,has become a momentous part to strengthen the performances of the OSCs.Simultaneously,CIL is also indispensable to illustrating the working mechanism of OSCs and enhancing the stability of the OSCs.In this essay,hybrid CILs in OSCs have been summarized.Firstly,the advancement and operating mechanism of OSCs,and the effects and relevant design rules of CIL are briefly concluded;secondly,the significant influence of CIL on enhancing the stability and PCE of OSCs is presented;thirdly,the characteristics of organic hybrid CIL and organic-inorganic hybrid CIL are introduced.Finally,the conclusion and outlook of CIL are summarized.
基金supported by the Key Program(U20A20235)funded by the National Natural Science Foundation of Chinathe National Natural Science Foundation of China(52171127,51974242)+3 种基金the Natural Science Basic Research Program of Shaanxi(2023-JC-QN-0595)the Regional Innovation Capability Guidance Program of Shaanxi(2022QFY10-06)the Key R&D Program of Xianyang Science and Technology Bureau(2021ZDYF-GY-0029)the Program of Xi’an Science and Technology Bureau(23GXFW0066)。
文摘Polymer-based composite electrolytes composed of three-dimensional Li_(6.4)La_(3)Zr_(2)Al_(0.2)O_(12)(3D-LLZAO)have attracted increasing attention due to their continuous ion conduction and satisfactory mechanical properties.However,the organic/inorganic interface is incompatible,resulting in slow lithium-ion transport at the interface.Therefore,the compatibility of organic/inorganic interface is an urgent problem to be solved.Inspired by the concept of“gecko eaves”,polymer-based composite solid electrolytes with dense interface structures were designed.The bridging of organic/inorganic interfaces was established by introducing silane coupling agent(3-chloropropyl)trimethoxysilane(CTMS)into the PEO-3D-LLZAO(PL)electrolyte.The in-situ coupling reaction improves the interface affinity,strengthens the organic/inorganic interaction,reduces the interface resistance,and thus achieves an efficient interface ion transport network.The prepared PEO-3D-LLZAO-CTMS(PLC)electrolyte exhibits enhanced ionic conductivity of 6.04×10^(-4)S cm^(-1)and high ion migration number(0.61)at 60℃and broadens the electrochemical window(5.1 V).At the same time,the PLC electrolyte has good thermal stability and high mechanical properties.Moreover,the Li Fe PO_(4)|PLC|Li battery has excellent rate performance and cycling stability with a capacity decay rate of 2.2%after 100 cycles at 60℃and 0.1 C.These advantages of PLC membranes indicate that this design approach is indeed practical,and the in-situ coupling method provides a new approach to address interface compatibility issues.
基金supported by the National Natural Science Foundation of China(62074037)the Science and Technology Department of Fujian Province(2020I0006)the Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China(2021ZZ124)。
文摘Focusing on the low open circuit voltage(V_(OC))and fill factor(FF)in flexible Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)solar cells,indium(In)ions are introduced into the CZTSSe absorbers near Mo foils to modify the back interface and passivate deep level defects in CZTSSe bulk concurrently for improving the performance of flexible device.The results show that In doping effectively inhibits the formation of secondary phase(Cu(S,Se)_(2))and VSndefects.Further studies demonstrate that the barrier height at the back interface is decreased and the deep level defects(Cu_(Sn)defects)in CZTSSe bulk are passivated.Moreover,the carrier concentration is increased and the V_(OC) deficit(V_(OC,def))is decreased significantly due to In doping.Finally,the flexible CZTSSe solar cell with 10.01%power conversion efficiency(PCE)has been obtained.The synergistic strategy of interface modification and bulk defects passivation through In incorporation provides a new thought for the fabrication of efficient flexible kesterite-based solar cells.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11822206 and 12072182)the Innovation Program of the Shanghai Municipal Education Commission(Grant No.2017-01-07-00-09-E00019)+1 种基金the Key Research Project of Zhejiang Laboratorythe National Supercomputing Center in Zhengzhou(Grant No.2021PE0AC02)
文摘The yttria-stabilized zirconia(YSZ)is a famous thermal barrier coating material to protect hot-end components of an engine.As a characteristic feature of the YSZ,the surface roughness shall play an important role in the interface thermal conductance between the YSZ and gas,considering that the gas is typically at an extremely high temperature.We investigate the effect of the surface roughness on the thermal conductance of the YSZ-gas interface with surface roughness described by nanoscale pores on the surface of the YSZ.We reveal two competitive mechanisms related to the microstructure of the pore,i.e.,the actual contact area effect and the confinement effect.The increase of the pore depth will enlarge the actual contact area between the YSZ and gas,leading to enhancement of the solid-gas interface thermal conductance.In contrast to the positive actual contact area effect,the geometry-induced confinement effect greatly reduces the interface thermal conductance.These findings shall offer some fundamental understandings for the microscopic mechanisms of the YSZ-gas interface thermal conductance.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62074148,61875194,11727902,12074372,11774341,11974344,61975204,and 11804335)the National Ten Thousand Talent Program for Young Topnotch Talents,the Key Research and Development Program of Changchun City(Grant No.21ZY05)+2 种基金the 100 Talents Program of the Chinese Academy of Sciences,Youth Innovation Promotion Association,CAS(Grant No.2020225)Jilin Province Science Fund(Grant No.20210101145JC)XuGuang Talents Plan of CIOMP。
文摘One-dimensional(1D)micro/nanowires of wide band gap semiconductors have become one of the most promising blocks of high-performance photodetectors.However,in the axial direction of micro/nanowires,the carriers can transport freely driven by an external electric field,which usually produces large dark current and low detectivity.Here,an UV photodetector built from three cross-intersecting ZnO microwires with double homo-interfaces is demonstrated by the chemical vapor deposition and physical transfer techniques.Compared with the reference device without interface,the dark current of this ZnO double-interface photodetector is significantly reduced by nearly 5 orders of magnitude,while the responsivity decreases slightly,thereby greatly improving the normalized photocurrent-to-dark current ratio.In addition,ZnO double-interface photodetector exhibits a much faster response speed(~0.65 s)than the no-interface device(~95 s).The improved performance is attributed to the potential barriers at the microwire-microwire homo-interfaces,which can regulate the carrier transport.Our findings in this work provide a promising approach for the design and development of high-performance photodetectors.
基金The authors acknowledge the financial support from the Natural Science Foundation of China(Nos.21931002 and 22101123)the National Key Research and Development Program of China(2018YFB0704100)+4 种基金the Shenzhen Science and Technology Innovation Committee(no.JCYJ20200109140812302)the Leading talents of Guangdong province program(2016LJ06N507)the Guangdong Provincial Key Laboratory of Energy Materials for Electric Power(no.2018B030322001)the Guangdong Provincial Key Laboratory of Catalysis(no.2020B121201002)Outstanding Talents Training Fund in Shenzhen.
文摘For the further improvement of the power conversion efficiency(PCE)and stability of perovskite solar cells(PSCs),the buried interface between the perovskite and the electron transport layer is crucial.However,it is challenging to effectively optimize this interface as it is buried beneath the perovskite film.Herein,we have designed and synthesized a series of multifunctional organic-inorganic(OI)complexes as buried interfacial material to promote electron extraction,as well as the crystal growth of the perovskite.The OI complex with BF4−group not only eliminates oxygen vacancies on the SnO_(2) surface but also balances energy level alignment between SnO_(2) and perovskite,providing a favorable environment for charge carrier extraction.Moreover,OI complex with amine(−NH_(2))functional group can regulate the crystallization of the perovskite film via interaction with PbI2,resulting in highly crystallized perovskite film with large grains and low defect density.Consequently,with rational molecular design,the PSCs with optimal OI complex buried interface layer which contains both BF4−and−NH_(2) functional groups yield a champion device efficiency of 23.69%.More importantly,the resulting unencapsulated device performs excellent ambient stability,maintaining over 90%of its initial efficiency after 2000 h storage,and excellent light stability of 91.5%remaining PCE in the maximum power point tracking measurement(under continuous 100 mW cm−2 light illumination in N2 atmosphere)after 500 h.
基金supported by the Fundamental Research Funds for the Central Universities of China (No. DUT10JN08)
文摘Co-sputtered AlxNiy thin films were used as diffusion barriers between aluminum and hydrogenated microcrystalline silicon （μc-Si：H） for flexible thin film solar cells. The stoichiometric ratio of AlxNiy showed a significant effect on the structures of the films. The obtained Al3Ni2 film was amorphous, while polycrystalline films were obtained when the ratio of aluminum to nickel was 1：1 and 2：3. An auger electron spectroscope and four-point probe system were applied to test the resistance to the interdiffusion between aluminum and silicon, as well as the conductivities of the AlxNiy barriers. The data of auger depth profile showed that the content of silicon was the minimum in the aluminum layer after sputtering for 4 min using AlNi thin film as the barrier layer. Compared to other AlxNiy alloys, the AlNi thin film possessed the lowest sheet resistance.
基金Project supported by the National Natural Science Foundation of China(Grant No.61774108)the Scientific Research Foundation for the Returned Overseas Chinese Scholars,Ministry of Education of China
文摘The capacitance-voltage（C-V） characteristic of the TiW/p-InP Schottky barrier diodes（SBDs） is analyzed considering the effects of the interface state（N（ss））, series resistance（Rs）, and deep level defects. The C-V of the Schottky contact is modeled based on the physical mechanism of the interfacial state and series resistance effect. The fitting coefficients α andβ are used to reflect the N（ss） and Rs on the C-V characteristics, respectively. The α decreases with the increase of frequency,while β increases with the increase of frequency. The capacitance increases with the increase of α and the decrease of β.From our model, the peak capacitance and its position can be estimated. The experimental value is found to be larger than the calculated one at the lower voltage. This phenomenon can be explained by the effect of deep level defects.
基金Project supported by the Open Project of State Key Laboratory of Superhard Materials,Jilin University(Grant No.201906)Key Laboratory of Microelectronic Devices and Integrated Technology,Institute of Microelectronics(Grant No.202006)the Science and Technology Program of Ningbo(Grant No.2019B10129).
文摘Vertical GaN Schottky barrier diodes with Ti N anodes were fabricated to investigate the electrical performance. The turn-on voltage and specific on-resistance of diodes are deduced to be approximately 0.41 V and 0.98 mΩ·cm2, respectively.The current-voltage curves show rectifying characteristics under different temperatures from 25℃ to 200℃, implying a good thermal stability of Ti N/Ga N contact. The low-frequency noise follows a 1/f behavior due to the multiple traps and/or barrier inhomogeneous at Ti N/Ga N interface. The trapping/de-trapping between traps and Fermi level causes the slight capacitance dispersion under reverse voltage.
