A low power 640×480 OLED-on-silicon chip design that used in microdisplay was presented. A novel pixel circuit was proposed to meet the special requirement of OLED-on-silicon. The novel pixel consists of three tr...A low power 640×480 OLED-on-silicon chip design that used in microdisplay was presented. A novel pixel circuit was proposed to meet the special requirement of OLED-on-silicon. The novel pixel consists of three transistors and one capacitor （3T 1C）. It has simple structure and can effectively reduce the current glitch generated during the AC driving from 55 pA to 7.5 pA, so that it can improve the precision of grayscale of display as well as extend the lifetime of （]）LED material. Except for the pixel array, low power row driver, column driver and other functional modules were also integrated on the chip. Several techniques were adopted to reduce the power consumption and frequency requirement of the chip. Finally, a 16×3×12 resolution chip was fabricated with standard 0.35 μm CMOS process of CSM and the chip can operate correctly.展开更多
采用两种经典传统荧光材料作为发光层,制备了非掺杂白色有机电致发光器件(WOLEDs).在器件中两层苝(perylene)以薄层的方式分别置于双极性主体材料CBP(4,4’-di(N-carbazole)biphyenyl)两侧作为蓝光发射体,一层超薄的红荧烯(rubrene)插入...采用两种经典传统荧光材料作为发光层,制备了非掺杂白色有机电致发光器件(WOLEDs).在器件中两层苝(perylene)以薄层的方式分别置于双极性主体材料CBP(4,4’-di(N-carbazole)biphyenyl)两侧作为蓝光发射体,一层超薄的红荧烯(rubrene)插入CBP中作为橙光发射体.通过改变rubrene在CBP中的插入位置获得了高效率白色荧光器件,最高电流效率为6.6 cd/A(外量子效率为2.6%),最高亮度为18480 cd/m^(2),且其中一种器件在200 mA/cm^(2)的高电流密度下,CIE(commission internationale de l’eclairage)色坐标可达理想白光平衡点(0.33,0.33).展开更多
基金Project(10ZCKFGX00200) supported by the Tianjin Science and Technology Supporting Plan,ChinaProject supported by the Fundamental Research Funds for the Central Universities of China
文摘A low power 640×480 OLED-on-silicon chip design that used in microdisplay was presented. A novel pixel circuit was proposed to meet the special requirement of OLED-on-silicon. The novel pixel consists of three transistors and one capacitor （3T 1C）. It has simple structure and can effectively reduce the current glitch generated during the AC driving from 55 pA to 7.5 pA, so that it can improve the precision of grayscale of display as well as extend the lifetime of （]）LED material. Except for the pixel array, low power row driver, column driver and other functional modules were also integrated on the chip. Several techniques were adopted to reduce the power consumption and frequency requirement of the chip. Finally, a 16×3×12 resolution chip was fabricated with standard 0.35 μm CMOS process of CSM and the chip can operate correctly.
文摘采用两种经典传统荧光材料作为发光层,制备了非掺杂白色有机电致发光器件(WOLEDs).在器件中两层苝(perylene)以薄层的方式分别置于双极性主体材料CBP(4,4’-di(N-carbazole)biphyenyl)两侧作为蓝光发射体,一层超薄的红荧烯(rubrene)插入CBP中作为橙光发射体.通过改变rubrene在CBP中的插入位置获得了高效率白色荧光器件,最高电流效率为6.6 cd/A(外量子效率为2.6%),最高亮度为18480 cd/m^(2),且其中一种器件在200 mA/cm^(2)的高电流密度下,CIE(commission internationale de l’eclairage)色坐标可达理想白光平衡点(0.33,0.33).
