To solve the problem of the low on-state current in p-type tunnel field-effect transistors(p-TFETs),this paper analyzes the mechanism of adjusting the tunneling current of a TFET device determined by studying the infl...To solve the problem of the low on-state current in p-type tunnel field-effect transistors(p-TFETs),this paper analyzes the mechanism of adjusting the tunneling current of a TFET device determined by studying the influence of the peak position of ion implantation on the potential of the p-TFET device surface and the width of the tunneling barrier.Doping-regulated silicon-based high on-state p-TFET devices are designed and fabricated,and the test results show that the on-state current of the fabricated devices can be increased by about two orders of magnitude compared with the current of other devices with the same structure.This method provides a new idea for the realization of high on-state current TFET devices.展开更多
A novel super-junction lateral double-diffused metal-oxide semiconductor （SJ-LDMOS） with a partial lightly doped P pillar （PD） is proposed. Firstly, the reduction in the partial P pillar charges ensures the charge...A novel super-junction lateral double-diffused metal-oxide semiconductor （SJ-LDMOS） with a partial lightly doped P pillar （PD） is proposed. Firstly, the reduction in the partial P pillar charges ensures the charge balance and suppresses the substrate-assisted depletion effect. Secondly, the new electric field peak produced by the P/P junction modulates the surface electric field distribution. Both of these result in a high breakdown voltage （BV）. In addition, due to the same conduction paths, the specific on-resistance （Ron,sp） of the PD SJ-LDMOS is approximately identical to the conventional SJ-LDMOS. Simulation results indicate that the average value of the surface lateral electric field of the PD SJ-LDMOS reaches 20 V/μm at a 15 μm drift length, resulting in a BV of 300 V.展开更多
Unusual quantum phenomena usually emerge upon doping Mott insulators.Using a molecular beam epitaxy system integrated with cryogenic sc√annin√g tunneling microscope,we investigate the electronic structure of a modul...Unusual quantum phenomena usually emerge upon doping Mott insulators.Using a molecular beam epitaxy system integrated with cryogenic sc√annin√g tunneling microscope,we investigate the electronic structure of a modulation-doped Mott insulator Sn/Si(111)-(√3×√3)R30°.In underdoped regions,we observe a universal pseudogap opening around the Fermi level,which changes little with the applied magnetic field and the occurrence of Sn vacancies.The pseudogap gets smeared out at elevated temperatures and alters in size with the spatial confinement of the Mott insulating phase.Our findings,along with the previously observed superconductivity at a higher doping level,are highly reminiscent of the electronic phase diagram in the doped copper oxide compounds.展开更多
We demonstrate an electric-controlled terahertz（THz） modulator which can be used to realize amplitude modulation of terahertz waves with slight photo-doping. The THz pulse transmission was efficiently modulated by e...We demonstrate an electric-controlled terahertz（THz） modulator which can be used to realize amplitude modulation of terahertz waves with slight photo-doping. The THz pulse transmission was efficiently modulated by electrically controlling the monolayer silicon-based device. The modulation depth reached 100% almost when the applied voltage was 7V at an external laser intensity of 0.6W/cm2. The saturation voltage reduced with the increase of the photo-excited intensity. In a THz continuous wave（CW）system, a significant fall in both THz transmission and reflection was also observed with the increase of applied voltage. This reduction in the THz transmission and reflection was induced by the absorption for electron injection. The results show that a high-efficiency and high modulation depth broadband electric-controlled terahertz modulator in a pure Si structure has been realized.展开更多
Terahertz（THz）radiation has been extensively investigated in recent years due to its potential applications in communication,homeland security,safety inspection,sensing,and imaging.For a common THz system,three part...Terahertz（THz）radiation has been extensively investigated in recent years due to its potential applications in communication,homeland security,safety inspection,sensing,and imaging.For a common THz system,three parts are quite important：THz sources,THz detectors,and THz functional devices.展开更多
基金Project supported by the Key Research and Development Program of Shaanxi(Grant No.2021GY-010)the National Defense Science and Technology Foundation Strengthening Program of China(Grant No.2019-XXXX-XX-236-00).
文摘To solve the problem of the low on-state current in p-type tunnel field-effect transistors(p-TFETs),this paper analyzes the mechanism of adjusting the tunneling current of a TFET device determined by studying the influence of the peak position of ion implantation on the potential of the p-TFET device surface and the width of the tunneling barrier.Doping-regulated silicon-based high on-state p-TFET devices are designed and fabricated,and the test results show that the on-state current of the fabricated devices can be increased by about two orders of magnitude compared with the current of other devices with the same structure.This method provides a new idea for the realization of high on-state current TFET devices.
基金supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2010ZX02201)the National Natural Science Foundation of China (Grant No. 61176069)the National Defense Pre-Research of China (Grant No. 51308020304)
文摘A novel super-junction lateral double-diffused metal-oxide semiconductor （SJ-LDMOS） with a partial lightly doped P pillar （PD） is proposed. Firstly, the reduction in the partial P pillar charges ensures the charge balance and suppresses the substrate-assisted depletion effect. Secondly, the new electric field peak produced by the P/P junction modulates the surface electric field distribution. Both of these result in a high breakdown voltage （BV）. In addition, due to the same conduction paths, the specific on-resistance （Ron,sp） of the PD SJ-LDMOS is approximately identical to the conventional SJ-LDMOS. Simulation results indicate that the average value of the surface lateral electric field of the PD SJ-LDMOS reaches 20 V/μm at a 15 μm drift length, resulting in a BV of 300 V.
基金by the National Natural Science Foundation of China(Grant Nos.62074092 and 11604366)the National Key R&D Program of China(Grant No.2018YFA0305603)。
文摘Unusual quantum phenomena usually emerge upon doping Mott insulators.Using a molecular beam epitaxy system integrated with cryogenic sc√annin√g tunneling microscope,we investigate the electronic structure of a modulation-doped Mott insulator Sn/Si(111)-(√3×√3)R30°.In underdoped regions,we observe a universal pseudogap opening around the Fermi level,which changes little with the applied magnetic field and the occurrence of Sn vacancies.The pseudogap gets smeared out at elevated temperatures and alters in size with the spatial confinement of the Mott insulating phase.Our findings,along with the previously observed superconductivity at a higher doping level,are highly reminiscent of the electronic phase diagram in the doped copper oxide compounds.
基金supported by the Natural Science Foundation of Beijing under Grant No.4144069the Science and Technology Project of Beijing Municipal Education Commission under Grant No.KM201410028004
文摘We demonstrate an electric-controlled terahertz（THz） modulator which can be used to realize amplitude modulation of terahertz waves with slight photo-doping. The THz pulse transmission was efficiently modulated by electrically controlling the monolayer silicon-based device. The modulation depth reached 100% almost when the applied voltage was 7V at an external laser intensity of 0.6W/cm2. The saturation voltage reduced with the increase of the photo-excited intensity. In a THz continuous wave（CW）system, a significant fall in both THz transmission and reflection was also observed with the increase of applied voltage. This reduction in the THz transmission and reflection was induced by the absorption for electron injection. The results show that a high-efficiency and high modulation depth broadband electric-controlled terahertz modulator in a pure Si structure has been realized.
文摘Terahertz（THz）radiation has been extensively investigated in recent years due to its potential applications in communication,homeland security,safety inspection,sensing,and imaging.For a common THz system,three parts are quite important：THz sources,THz detectors,and THz functional devices.
