In this paper, a mixed terminal structure for the 4H-SiC merged PiN/Schottky diode （MPS） is investigated, which is a combination of a field plate, a junction termination extension and floating limiting rings. Optimi...In this paper, a mixed terminal structure for the 4H-SiC merged PiN/Schottky diode （MPS） is investigated, which is a combination of a field plate, a junction termination extension and floating limiting rings. Optimization is performed on the terminal structure by using the ISE-TCAD. Further analysis shows that this structure can greatly reduce the sensitivity of the breakdown voltage to the doping concentration and can effectively suppress the effect of the interface charge compared with the structure of the junction termination extension. At the same time, the 4H-SiC MPS with this termination structure can reach a high and stable breakdown voltage.展开更多
A method to improve the surge current capability of silicon carbide(SiC)merged PiN Schottky(MPS)diodes is presented and investigated via three-dimensional electro-thermal simulations.When compared with a conventional ...A method to improve the surge current capability of silicon carbide(SiC)merged PiN Schottky(MPS)diodes is presented and investigated via three-dimensional electro-thermal simulations.When compared with a conventional MPS diode,the proposed structure has a more uniform current distribution during bipolar conduction due to the help of the continuous P+surface,which can avoid the formation of local hotspots during the surge process.The Silvaco simulation results show that the proposed structure has a 20.29%higher surge capability and a 15.06%higher surge energy compared with a conventional MPS diode.The bipolar on-state voltage of the proposed structure is 4.69 V,which is 56.29%lower than that of a conventional MPS diode,enabling the device to enter the bipolar mode earlier during the surge process.Furthermore,the proposed structure can suppress the occurrence of‘snapback'phenomena when switching from the unipolar to the bipolar operation mode.In addition,an analysis of the surge process of MPS diodes is carried out in detail.展开更多
A novel 4 H-Si C merged P–I–N Schottky(MPS)with floating back-to-back diode(FBD),named FBD-MPS,is proposed and investigated by the Sentaurus technology computer-aided design(TCAD)and analytical model.The FBD feature...A novel 4 H-Si C merged P–I–N Schottky(MPS)with floating back-to-back diode(FBD),named FBD-MPS,is proposed and investigated by the Sentaurus technology computer-aided design(TCAD)and analytical model.The FBD features a trench oxide and floating P-shield,which is inserted between the P+/N-(PN)junction and Schottky junction to eliminate the shorted anode effect.The FBD is formed by the N-drift/P-shield/N-drift and it separates the PN and Schottky active region independently.The FBD reduces not only the Vturn to suppress the snapback effect but also the Von at bipolar operation.The results show that the snapback can be completely eliminated,and the maximum electric field(Emax)is shifted from the Schottky junction to the FBD in the breakdown state.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.61006060)the Shaanxi Provincial 13115 Innovation Engineering,China(Grant No.2008ZDKG-30)
文摘In this paper, a mixed terminal structure for the 4H-SiC merged PiN/Schottky diode （MPS） is investigated, which is a combination of a field plate, a junction termination extension and floating limiting rings. Optimization is performed on the terminal structure by using the ISE-TCAD. Further analysis shows that this structure can greatly reduce the sensitivity of the breakdown voltage to the doping concentration and can effectively suppress the effect of the interface charge compared with the structure of the junction termination extension. At the same time, the 4H-SiC MPS with this termination structure can reach a high and stable breakdown voltage.
基金the National Research and Development Program for Major Research Instruments of China(Grant No.62027814)the National Natural Science Foundation of China(Grant No.61904045)Zhejiang Provincial Natural Science Foundation of China(Grant No.LQ20F040004)。
文摘A method to improve the surge current capability of silicon carbide(SiC)merged PiN Schottky(MPS)diodes is presented and investigated via three-dimensional electro-thermal simulations.When compared with a conventional MPS diode,the proposed structure has a more uniform current distribution during bipolar conduction due to the help of the continuous P+surface,which can avoid the formation of local hotspots during the surge process.The Silvaco simulation results show that the proposed structure has a 20.29%higher surge capability and a 15.06%higher surge energy compared with a conventional MPS diode.The bipolar on-state voltage of the proposed structure is 4.69 V,which is 56.29%lower than that of a conventional MPS diode,enabling the device to enter the bipolar mode earlier during the surge process.Furthermore,the proposed structure can suppress the occurrence of‘snapback'phenomena when switching from the unipolar to the bipolar operation mode.In addition,an analysis of the surge process of MPS diodes is carried out in detail.
文摘A novel 4 H-Si C merged P–I–N Schottky(MPS)with floating back-to-back diode(FBD),named FBD-MPS,is proposed and investigated by the Sentaurus technology computer-aided design(TCAD)and analytical model.The FBD features a trench oxide and floating P-shield,which is inserted between the P+/N-(PN)junction and Schottky junction to eliminate the shorted anode effect.The FBD is formed by the N-drift/P-shield/N-drift and it separates the PN and Schottky active region independently.The FBD reduces not only the Vturn to suppress the snapback effect but also the Von at bipolar operation.The results show that the snapback can be completely eliminated,and the maximum electric field(Emax)is shifted from the Schottky junction to the FBD in the breakdown state.
