Development of the medium and low voltage DC distribution system is of great significance to a regional transmission of electric energy,increasing a penetration rate of new energy,and enhancing a safety of the operati...Development of the medium and low voltage DC distribution system is of great significance to a regional transmission of electric energy,increasing a penetration rate of new energy,and enhancing a safety of the operation of the AC/DC interconnected grid.This paper first summarizes the medium and low voltage DC distribution system schemes and plans put forward by many countries,and then elaborate status of under-construction medium and low voltage DC distribution system project cases in China.Based on these project cases,this paper analyzes key issues involved in the medium and low voltage DC distribution system topologies,equipment,operation control technologies and DC fault protections,in order to provide theoretical and technical reference for future medium and low voltage DC distribution system-related projects.Finally,this paper combines a current China research status to summarize and give a prediction about the future research direction of medium and low voltage DC distribution system,which can provide reference for the research of medium and low voltage DC distribution system.展开更多
For a long time, because of the lack of investment capital and enough attentions, the overall constructions of rural power grid were far behind than the urban power grid in Chongqing Jiangbei Power Company. The low vo...For a long time, because of the lack of investment capital and enough attentions, the overall constructions of rural power grid were far behind than the urban power grid in Chongqing Jiangbei Power Company. The low voltage problems were highlighted in the rural power grid due to the characteristics of rural power grid. Using the distribution network flow calculation method, we evaluated the low voltage problems of the rural power grid which belongs to Chongqing Jiangbei Power Company. In addition, we collected the data of distribution transformers in electricity consumption peak period. Some practical management strategies were proposed by the analysis and evaluation of potential and appeared low voltage problems.展开更多
This paper proposes a technique to mitigate the voltage unbalance issue caused by the high penetration of photovoltaic （PV） systems into the low voltage distribution networks （LVDN） using a single phase energy sto...This paper proposes a technique to mitigate the voltage unbalance issue caused by the high penetration of photovoltaic （PV） systems into the low voltage distribution networks （LVDN） using a single phase energy storage system （ESS）. The ESS comprises a hi-directional power flow inverter and a battery bank. The system is capable of absorbing the excess power and delivering power to the network in order to keep the voltage unbalance factor （VUF） below the statutory limit of 1%. Investigations are carried out in the experimental small-scale energy zone （SSEZ）. The experimental results demonstrate that the ESS is capable of mitigating the VUF of the network.展开更多
In this study,a pulsed,high voltage driven hollow-cathode electron beam sources through an optical trigger is designed with characteristics of simple structure,low cost,and easy triggering.To validate the new design,t...In this study,a pulsed,high voltage driven hollow-cathode electron beam sources through an optical trigger is designed with characteristics of simple structure,low cost,and easy triggering.To validate the new design,the characteristics of hollow-cathode discharge and electron beam characterization under pulsed high voltage drive are studied experimentally and discussed by discharge characteristics and analyses of waveform details,respectively.The validation experiments indicate that the pulsed high voltage supply significantly improves the frequency and stability of the discharge,which provides a new solution for the realization of a high-frequency,high-energy electron beam source.The peak current amplitude in the high-energy electron beam increases from 6.2 A to 79.6 A,which indicates the pulsed power mode significantly improves the electron beam performance.Besides,increasing the capacitance significantly affects the highcurrent,lower-energy electron beam more than the high-energy electron beam.展开更多
In-situ XRD,^(31)P NMR and ^(23)Na NMR were used to analyze the interaction behavior of Na_(3)V_(2)(PO_(4))_(3) at low voltage,and then a new intercalation model was proposed.During the transition from Na_(3)V_(2)(PO_...In-situ XRD,^(31)P NMR and ^(23)Na NMR were used to analyze the interaction behavior of Na_(3)V_(2)(PO_(4))_(3) at low voltage,and then a new intercalation model was proposed.During the transition from Na_(3)V_(2)(PO_(4))_(3) to Na_(4)V_(2)(PO_(4))_(3),Na ions insert into M1,M2 and M3 sites simultaneously.Afterwards,during the transition of Na_(4)V_(2)(PO_(4))_(3)to Na_(5)V_(2)(PO_(4))_(3),Na ions mainly insert into M3 site.展开更多
Compared with organic electrolytes,aqueous electrolytes exhibit significantly higher ionic conductivity and possess inherent safety features,showcasing unique advantages in supercapacitors.However,challenges remain fo...Compared with organic electrolytes,aqueous electrolytes exhibit significantly higher ionic conductivity and possess inherent safety features,showcasing unique advantages in supercapacitors.However,challenges remain for low-salt aqueous electrolytes operating at high voltage and low temperature.Herein,we report a low-salt(0.87 m,m means mol kg^(-1))'salt in dimethyl sulfoxide/water'hybrid electrolyte with non-flammability via hybridizing aqueous electrolyte with an organic co-solvent of dimethyl sulfoxide(hydrogen bond acceptor).As a result,the 0.87 m hybrid electrolyte exhibits enhanced electrochemical stability,a freezing temperature below-50℃,and an outstanding ionic conductivity of 0.52mS cm~(-1)at-50℃.Dimethyl sulfoxide can anchor water molecules through intermolecular hydrogen bond interaction,effectively reinforcing the stability of water in the hybrid electrolyte.Furthermore,the interaction between dimethyl sulfoxide and water molecules diminishes the involvement of water in the generation of ordered ice crystals,finally facilitating the low-temperature performance of the hybrid electrolyte.When paired with the 0.87 m'salt in dimethyl sulfoxide/water'hybrid electrolyte,the symmetric supercapacitor presents a 2.0 V high operating voltage at 25℃,and can operate stably at-50℃.Importantly,the suppressed electrochemical reaction of water at-50℃further leads to the symmetric supercapacitor operated at a higher voltage of 2.6 V.This modification strategy opens an effective avenue to develop low-salt electrolytes for high-voltage and low-temperature aqueous supercapacitors.展开更多
The rate performance and cycle stability of graphitized needle coke(GNC)as anode are still limited by the sluggish kinetics and volume expansion during the Li ions intercalation and de-intercalation process.Especially...The rate performance and cycle stability of graphitized needle coke(GNC)as anode are still limited by the sluggish kinetics and volume expansion during the Li ions intercalation and de-intercalation process.Especially,the output of energy density for lithium ion batteries(LIBs)is directly affected by the delithiation capacity below 0.5 V.Here,the mildly expanded graphitized needle coke(MEGNC)with the enlarged interlayer spacing from 0.346 to 0.352 nm is obtained by the two-step mild oxidation intercalation modification.The voltage plateau of MEGNC anode below 0.5 V is obviously broadened as compared to the initial GNC anode,contributing to the enhancement of Li storage below the low voltage plateau.Moreover,the coin full cell and pouch full cell configured with MEGNC anode exhibit much enhanced Li storage ability,energy density and better cycling stability than those full cells configured with GNC and commercial graphite anodes,demonstrating the practical application value of MEGNC.The superior anode behaviors of MEGNC including the increased effective capacity at low voltage and superior cyclic stability are mainly benefited from the enlarged interlayer spacing,which not only accelerates the Li ions diffusion rate,but also effectively alleviates the volume expansion and fragmentation during the Li ions intercalation process.In addition,the above result is further confirmed by the density functional theory simulation.This work provides an effective modification strategy for the NC-based graphite to enhance the delithiation capacity at a low voltage plateau,dedicated to improving the energy density and durability of LIBs.展开更多
This paper identifies the contributions of p-a-SiC：H layers and i-a-Si：H layers to the open circuit voltage of p-i-n type a-Si：H solar cells deposited at a low temperature of 125℃. We find that poor quality p-a-Si...This paper identifies the contributions of p-a-SiC：H layers and i-a-Si：H layers to the open circuit voltage of p-i-n type a-Si：H solar cells deposited at a low temperature of 125℃. We find that poor quality p-a-SiC：H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely. A significant improvement in open circuit voltage has been obtained by using high quality p-~SiC：H films optimized at the ＂low-power regime＂ under low silane flow rates and high hydrogen dilution conditions.展开更多
A new ultra-low specific on-resistance （Ron,sp） vertical double diffusion metal-oxide-semiconductor field-effect tran- sistor （VDMOS） with continuous electron accumulation （CEA） layer, denoted as CEA-VDMOS, is p...A new ultra-low specific on-resistance （Ron,sp） vertical double diffusion metal-oxide-semiconductor field-effect tran- sistor （VDMOS） with continuous electron accumulation （CEA） layer, denoted as CEA-VDMOS, is proposed and its new current transport mechanism is investigated. It features a trench gate directly extended to the drain, which includes two PN junctions. In on-state, the electron accumulation layers are formed along the sides of the extended gate and introduce two continuous low-resistance current paths from the source to the drain in a cell pitch. This mechanism not only dramatically reduces the Ron,sp but also makes the Ron,sp almost independent of the n-pillar doping concentration （Am）. In off-state, the depletion between the n-pillar and p-pillar within the extended trench gate increases the Nn, and further reduces the Ron,sp. Especially, the two PNjunctions within the trench gate support a high gate--drain voltage in the off-state and on-state, re- spectively. However, the extended gate increases the gate capacitance and thus weakens the dynamic performance to some extent. Therefore, the CEA-VDMOS is more suitable for low and medium frequencies application. Simulation indicates that the CEA-VDMOS reduces the Ron,sp by 80% compared with the conventional super-junction VDMOS （CSJ-VDMOS） at the same high breakdown voltage （BV）.展开更多
The driving voltage of an organic light-emitting diode（OLED） is lowered by employing molybdenum trioxide（MoO3）/N,N＇-bis（naphthalene-1-yl）-N,N＇-bis（phe-nyl）-benzidine（NPB） multiple quantum well（MQW） struc...The driving voltage of an organic light-emitting diode（OLED） is lowered by employing molybdenum trioxide（MoO3）/N,N＇-bis（naphthalene-1-yl）-N,N＇-bis（phe-nyl）-benzidine（NPB） multiple quantum well（MQW） structure in the hole transport layer.For the device with double quantum well（DQW） structure of ITO/[MoO3（2.5 nm）/NPB（20 nm）]2/Alq3（50 nm）/LiF（0.8 nm）/Al（120 nm）],the turn-on voltage is reduced to 2.8 V,which is lowered by 0.4 V compared with that of the control device（without MQW structures）,and the driving voltage is 5.6 V,which is reduced by 1 V compared with that of the control device at the 1000 cd/m2.In this work,the enhancement of the injection and transport ability for holes could reduce the driving voltage for the device with MQW structure,which is attributed not only to the reduced energy barrier between ITO and NPB,but also to the forming charge transfer complex between MoO3 and NPB induced by the interfacial doping effect of MoO3.展开更多
A high performance InAlN/GaN high electron mobility transistor(HEMT)at low voltage operation(6-10 V drain voltage)has been fabricated.An 8 nm InAlN barrier layer is adopted to generate large 2DEG density thus to reduc...A high performance InAlN/GaN high electron mobility transistor(HEMT)at low voltage operation(6-10 V drain voltage)has been fabricated.An 8 nm InAlN barrier layer is adopted to generate large 2DEG density thus to reduce sheet resistance.Highly scaled lateral dimension(1.2μm source-drain spacing)is to reduce access resistance.Both low sheet resistance of the InAlN/GaN structure and scaled lateral dimension contribute to an high extrinsic transconductance of 550 mS/mm and a large drain current of 2.3 A/mm with low on-resistance(Ron)of 0.9Ω·mm.Small signal measurement shows an fT/fmax of 131 GHz/196 GHz.Large signal measurement shows that the InAlN/GaN HEMT can yield 64.7%-52.7%(Vds=6-10 V)power added efficiency(PAE)associated with 1.6-2.4 W/mm output power density at 8 GHz.These results demonstrate that GaN-based HEMTs not only have advantages in the existing high voltage power and high frequency rf field,but also are attractive for low voltage mobile compatible rf applications.展开更多
Micro-supercapacitors(MSCs)are considered as highly competitive power sources for miniaturized electronics.However,narrow voltage window and poor anti-freezing properties of MSCs in conventional aqueous electrolytes l...Micro-supercapacitors(MSCs)are considered as highly competitive power sources for miniaturized electronics.However,narrow voltage window and poor anti-freezing properties of MSCs in conventional aqueous electrolytes lead to low energy density and limited environmental adaption.Herein,we report the construction of low-temperature and high-energy-density MSCs based on anti-freezing hybrid gel electrolytes(HGE)through introducing ethylene glycol(EG)additives into aqueous LiCl electrolyte.Since EG partially destroys hydrogen bond network among water molecules,the HGE exhibits maximum electrochemical stability window of 2.7 V and superior anti-freezing features with a glass transition temperature of-62.8℃.Further,the optimized MSCs using activated carbon microelectrodes possess impressive volumetric capacitance of 28.9 F cm^(-3)and energy density of 10.3 mWh cm^(-3)in the voltage of 1.6 V,2.6 times higher than MSCs tested in 1.2 V.Importantly,the MSCs display 68.3%capacitance retention even at-30℃ compared to the value at 25℃,and ultra-long cyclability with 85.7%of initial capacitance after 15,000 times,indicating extraordinary low-temperature performance.Besides,our devices offer favorable flexibility and modular integration.Therefore,this work provides a general strategy of realizing flexible,safe and anti-freezing microscale power sources,holding great potential towards subzero-temperature microelectronic applications.展开更多
The characteristics of low permeability reservoirs and distribution of sweet spots in the Oligocene Zhuhai Formation of Wenchang A sag, Pearl River Basin were investigated by core observation and thin section analysis...The characteristics of low permeability reservoirs and distribution of sweet spots in the Oligocene Zhuhai Formation of Wenchang A sag, Pearl River Basin were investigated by core observation and thin section analysis. The study results show that there develop the fine, medium and coarse sandstone reservoirs of tidal flat–fan delta facies, which are of mostly low permeability and locally medium permeability. There are two kinds of pore evolution patterns: oil charging first and densification later, the reservoirs featuring this pattern are mainly in the third member of Zhuhai Formation between the south fault zone and the sixth fault zone, and the pattern of densification first and gas charging later is widespread across the study area. Strong compaction and local calcium cementation are the key factors causing low permeability of the reservoirs in the Zhuhai Formation. Thick and coarse grain sand sedimentary body is the precondition to form "sweet spot" reservoirs. Weak compaction and cementation, dissolution, early hydrocarbon filling and authigenic chlorite coating are the main factors controlling formation of "sweet spot" reservoir. It is predicted that there develop between the south fault and sixth fault zones the Class Ⅰ "sweet spot" in medium compaction zone, Class Ⅱ "sweet spot" in nearly strong compaction zone, Class Ⅲ "sweet spot" reservoir in the nearly strong to strong compaction zone with oil charging at early stage, and Class IV "sweet spot" reservoir in the strong compaction and authigenic chlorite coating protection zone in the sixth fault zone.展开更多
Rectifiers with high efficiency and high power density are crucial to the stable and efficient power supply of 5G communication base stations,which deserves in-depth investigation.In general,there are two key problems...Rectifiers with high efficiency and high power density are crucial to the stable and efficient power supply of 5G communication base stations,which deserves in-depth investigation.In general,there are two key problems to be addressed:supporting both alternating current(AC)and direct current(DC)input,and minimizing the common-mode voltage as well as leakage current for safety reasons.In this paper,a hybrid five-level single-phase rectifier is proposed.A five-level topology is adopted in the upper arm,and a half-bridge diode topology is adopted in the lower arm.A dual closed-loop control strategy and a flying capacitor voltage regulation method are designed accordingly so that the compatibility of both AC and DC input is realized with low common voltage and small passive devices.Simulation and experimental results demonstrate the effectiveness and performance of the proposed rectifier.展开更多
A detector setup for the measurement of angular distribution of heavy-ion elastic scattering at energies around Coulomb barrier on the radioactive ion beam line in Lanzhou at the heavy-ion research facility in Lanzhou...A detector setup for the measurement of angular distribution of heavy-ion elastic scattering at energies around Coulomb barrier on the radioactive ion beam line in Lanzhou at the heavy-ion research facility in Lanzhou is designed.The beam profile and the scattering angles on the target are deduced by two parallel plate avalanche counters,and four sets of detector telescopes(including doublesided silicon strip detectors) are placed systematically with the beam line,incorporating with Monte Carlo simulations.The data of ^(16)O on ^(89)Y target were analyzed to compare with the simulation results.It is found that the simulated distribution is agreeable with the experimental data.By assuming the pure Rutherford scattering at small scattering angles,the angular distribution of elastic scattering of^(16)O+^(89)Y at low energies can be reasonably obtained.It indicates that this set of detector setup can be used for the measurement of angular distributions of heavy-ion elastic scattering at energies around Coulomb barrier.展开更多
This paper is devoted to the simulation of the arc plasma in a simplified low-voltage circuit breaker chamber. Based on a group of coupled governing equations, a three-dimensional （3-D） arc plasma model is built and...This paper is devoted to the simulation of the arc plasma in a simplified low-voltage circuit breaker chamber. Based on a group of coupled governing equations, a three-dimensional （3-D） arc plasma model is built and solved by a modified commercial code. Firstly, this paper presents a solution of the stationary state of the arc plasma and discusses the distribution of some parameters throughout the chamber. Secondly, with the ferromagnetic materials included, the balance of the stationary state is broken and a transient course is calculated. In light of the simulation results, the temperature distribution sequence, the arc motion and the plasma jet are then described and analyzed in detail.展开更多
In the storage ring RF system of Shanghai Synchrotron Radiation Facility,the clock distribution and the local oscillator are two parts of the digital low level radio frequency hardware board.In this paper,we designed ...In the storage ring RF system of Shanghai Synchrotron Radiation Facility,the clock distribution and the local oscillator are two parts of the digital low level radio frequency hardware board.In this paper,we designed and produced the clock distribution and the local oscillator board using the AD9858 and AD9510 chips.The results show that the phase noise of the local oscillator signal is lower than 100dBc/Hz with 50 kHz offset.展开更多
Scaling problems and limitations of conventional silicon transistors have led the designers to exploit novel nano-technologies. One of the most promising and feasible nano-technologies is CNT(Carbon Nanotube) based tr...Scaling problems and limitations of conventional silicon transistors have led the designers to exploit novel nano-technologies. One of the most promising and feasible nano-technologies is CNT(Carbon Nanotube) based transistors. In this paper, a high-speed and energy-efficient CNFET(Carbon Nanotube Field Effect Transistor) based Full Adder cell is proposed for nanotechnology. This design is simulated in various supply voltages, frequencies and load capacitors using HSPICE circuit simulator. Significant improvement is achieved in terms of speed and PDP(Power-Delay-Product) in comparison with other classical and state-of-the-art CMOS and CNFET-based designs, existing in the literature. The proposed Full Adder can also drive large load capacitance and works properly in low supply voltages.展开更多
A novel partial silicon-on-insulator （PSOI） high voltage device with a low-k （relative permittivity） dielectric buried layer （LK PSOI） and its breakdown mechanism are presented and investigated by MEDICI. At a l...A novel partial silicon-on-insulator （PSOI） high voltage device with a low-k （relative permittivity） dielectric buried layer （LK PSOI） and its breakdown mechanism are presented and investigated by MEDICI. At a low k value the electric field strength in the dielectric buried layer （EI） is enhanced and a Si window makes the substrate share the vertical drop, resulting in a high vertical breakdown voltage; in the lateral direction, a high electric field peak is introduced at the Si window, which modulates the electric field distribution in the SOI layer; consequently, a high breakdown voltage （BV） is obtained. The values of EI and BV of LK PSOI with ki = 2 on a 2μm thick SOI layer over 1μm thick buried layer are enhanced by 74% and 19%, respectively, compared with those of the conventional PSOI. Furthermore, the Si window also alleviates the self-heating effect.展开更多
A novel low power and low voltage current mirror with a very low current copy error is presented and the principle of its operation is discussed. In this circuit, the gain boosting regulated cascode scheme is used to ...A novel low power and low voltage current mirror with a very low current copy error is presented and the principle of its operation is discussed. In this circuit, the gain boosting regulated cascode scheme is used to improve the output resistance, while using inverter as an amplifier. The simulation results with HSPICE in TSMC 0.18 μm CMOS technology are given, which verify the high performance of the proposed structure. Simulation results show an input resistance of 0.014 Ω and an output resistance of 3 GΩ. The current copy error is favorable as low as 0.002% together with an input （the minimum input voltage of Vin,min- 0.24 V） and an output （the minimum output voltage of Vout,min~ 0.16 V） compliances while working with the 1 V power supply and the 50 μA input current. The current copy error is near zero at the input current of 27 μA. It consumes only 76μW and introduces a very low output offset current of 50 pA.展开更多
基金supported by the National Key Rese arch and Development Program of China(2018YFB0904100)Science and Technology Project of State Grid(SGHB0000KXJS1800685)
文摘Development of the medium and low voltage DC distribution system is of great significance to a regional transmission of electric energy,increasing a penetration rate of new energy,and enhancing a safety of the operation of the AC/DC interconnected grid.This paper first summarizes the medium and low voltage DC distribution system schemes and plans put forward by many countries,and then elaborate status of under-construction medium and low voltage DC distribution system project cases in China.Based on these project cases,this paper analyzes key issues involved in the medium and low voltage DC distribution system topologies,equipment,operation control technologies and DC fault protections,in order to provide theoretical and technical reference for future medium and low voltage DC distribution system-related projects.Finally,this paper combines a current China research status to summarize and give a prediction about the future research direction of medium and low voltage DC distribution system,which can provide reference for the research of medium and low voltage DC distribution system.
文摘For a long time, because of the lack of investment capital and enough attentions, the overall constructions of rural power grid were far behind than the urban power grid in Chongqing Jiangbei Power Company. The low voltage problems were highlighted in the rural power grid due to the characteristics of rural power grid. Using the distribution network flow calculation method, we evaluated the low voltage problems of the rural power grid which belongs to Chongqing Jiangbei Power Company. In addition, we collected the data of distribution transformers in electricity consumption peak period. Some practical management strategies were proposed by the analysis and evaluation of potential and appeared low voltage problems.
基金supported in part by the Ministry of Science,Technology and Innovation in Malaysia under the Brain Gain Programme under Grant No. MOSTI/BGM/ R&D/15
文摘This paper proposes a technique to mitigate the voltage unbalance issue caused by the high penetration of photovoltaic （PV） systems into the low voltage distribution networks （LVDN） using a single phase energy storage system （ESS）. The ESS comprises a hi-directional power flow inverter and a battery bank. The system is capable of absorbing the excess power and delivering power to the network in order to keep the voltage unbalance factor （VUF） below the statutory limit of 1%. Investigations are carried out in the experimental small-scale energy zone （SSEZ）. The experimental results demonstrate that the ESS is capable of mitigating the VUF of the network.
基金supported by National Natural Science Foundation of China(No.12102099)the National Key R&D Program of China(No.2021YFC2202700)the Outstanding Academic Leader Project of Shanghai(Youth)(No.23XD1421700),respectively。
文摘In this study,a pulsed,high voltage driven hollow-cathode electron beam sources through an optical trigger is designed with characteristics of simple structure,low cost,and easy triggering.To validate the new design,the characteristics of hollow-cathode discharge and electron beam characterization under pulsed high voltage drive are studied experimentally and discussed by discharge characteristics and analyses of waveform details,respectively.The validation experiments indicate that the pulsed high voltage supply significantly improves the frequency and stability of the discharge,which provides a new solution for the realization of a high-frequency,high-energy electron beam source.The peak current amplitude in the high-energy electron beam increases from 6.2 A to 79.6 A,which indicates the pulsed power mode significantly improves the electron beam performance.Besides,increasing the capacitance significantly affects the highcurrent,lower-energy electron beam more than the high-energy electron beam.
基金supported by grants from the National Natural Science Foundation of China(No.22272055)multifunctional platform for innovation of ECNU(EPR).
文摘In-situ XRD,^(31)P NMR and ^(23)Na NMR were used to analyze the interaction behavior of Na_(3)V_(2)(PO_(4))_(3) at low voltage,and then a new intercalation model was proposed.During the transition from Na_(3)V_(2)(PO_(4))_(3) to Na_(4)V_(2)(PO_(4))_(3),Na ions insert into M1,M2 and M3 sites simultaneously.Afterwards,during the transition of Na_(4)V_(2)(PO_(4))_(3)to Na_(5)V_(2)(PO_(4))_(3),Na ions mainly insert into M3 site.
基金partly supported by the National Key R&D Program of China(2022YFB4101602)the National Natural Science Foundation of China(22078052)the Fundamental Research Funds for the Central Universities(DUT22ZD207)。
文摘Compared with organic electrolytes,aqueous electrolytes exhibit significantly higher ionic conductivity and possess inherent safety features,showcasing unique advantages in supercapacitors.However,challenges remain for low-salt aqueous electrolytes operating at high voltage and low temperature.Herein,we report a low-salt(0.87 m,m means mol kg^(-1))'salt in dimethyl sulfoxide/water'hybrid electrolyte with non-flammability via hybridizing aqueous electrolyte with an organic co-solvent of dimethyl sulfoxide(hydrogen bond acceptor).As a result,the 0.87 m hybrid electrolyte exhibits enhanced electrochemical stability,a freezing temperature below-50℃,and an outstanding ionic conductivity of 0.52mS cm~(-1)at-50℃.Dimethyl sulfoxide can anchor water molecules through intermolecular hydrogen bond interaction,effectively reinforcing the stability of water in the hybrid electrolyte.Furthermore,the interaction between dimethyl sulfoxide and water molecules diminishes the involvement of water in the generation of ordered ice crystals,finally facilitating the low-temperature performance of the hybrid electrolyte.When paired with the 0.87 m'salt in dimethyl sulfoxide/water'hybrid electrolyte,the symmetric supercapacitor presents a 2.0 V high operating voltage at 25℃,and can operate stably at-50℃.Importantly,the suppressed electrochemical reaction of water at-50℃further leads to the symmetric supercapacitor operated at a higher voltage of 2.6 V.This modification strategy opens an effective avenue to develop low-salt electrolytes for high-voltage and low-temperature aqueous supercapacitors.
基金supported by the National Natural Science Foundation of China(21776309,22122807 and 21706283)。
文摘The rate performance and cycle stability of graphitized needle coke(GNC)as anode are still limited by the sluggish kinetics and volume expansion during the Li ions intercalation and de-intercalation process.Especially,the output of energy density for lithium ion batteries(LIBs)is directly affected by the delithiation capacity below 0.5 V.Here,the mildly expanded graphitized needle coke(MEGNC)with the enlarged interlayer spacing from 0.346 to 0.352 nm is obtained by the two-step mild oxidation intercalation modification.The voltage plateau of MEGNC anode below 0.5 V is obviously broadened as compared to the initial GNC anode,contributing to the enhancement of Li storage below the low voltage plateau.Moreover,the coin full cell and pouch full cell configured with MEGNC anode exhibit much enhanced Li storage ability,energy density and better cycling stability than those full cells configured with GNC and commercial graphite anodes,demonstrating the practical application value of MEGNC.The superior anode behaviors of MEGNC including the increased effective capacity at low voltage and superior cyclic stability are mainly benefited from the enlarged interlayer spacing,which not only accelerates the Li ions diffusion rate,but also effectively alleviates the volume expansion and fragmentation during the Li ions intercalation process.In addition,the above result is further confirmed by the density functional theory simulation.This work provides an effective modification strategy for the NC-based graphite to enhance the delithiation capacity at a low voltage plateau,dedicated to improving the energy density and durability of LIBs.
基金Project supported by the National High Technology Research and Development Program of China （Grant No. 2009AA05Z422）, the National Basic Research Program of China （Grant Nos. 2011CBA00705, 2011CBA00706, and 2011CBA00707）, and the Natural Science Foundation of Tianjin （Grant No. 08JCZDJC22200）.
文摘This paper identifies the contributions of p-a-SiC：H layers and i-a-Si：H layers to the open circuit voltage of p-i-n type a-Si：H solar cells deposited at a low temperature of 125℃. We find that poor quality p-a-SiC：H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely. A significant improvement in open circuit voltage has been obtained by using high quality p-~SiC：H films optimized at the ＂low-power regime＂ under low silane flow rates and high hydrogen dilution conditions.
基金supported by the National Natural Science Foundation of China(Grant Nos.61176069 and 61376079)the Fundamental Research Funds for the Central Universities,China(Grant No.ZYGX2014Z006)
文摘A new ultra-low specific on-resistance （Ron,sp） vertical double diffusion metal-oxide-semiconductor field-effect tran- sistor （VDMOS） with continuous electron accumulation （CEA） layer, denoted as CEA-VDMOS, is proposed and its new current transport mechanism is investigated. It features a trench gate directly extended to the drain, which includes two PN junctions. In on-state, the electron accumulation layers are formed along the sides of the extended gate and introduce two continuous low-resistance current paths from the source to the drain in a cell pitch. This mechanism not only dramatically reduces the Ron,sp but also makes the Ron,sp almost independent of the n-pillar doping concentration （Am）. In off-state, the depletion between the n-pillar and p-pillar within the extended trench gate increases the Nn, and further reduces the Ron,sp. Especially, the two PNjunctions within the trench gate support a high gate--drain voltage in the off-state and on-state, re- spectively. However, the extended gate increases the gate capacitance and thus weakens the dynamic performance to some extent. Therefore, the CEA-VDMOS is more suitable for low and medium frequencies application. Simulation indicates that the CEA-VDMOS reduces the Ron,sp by 80% compared with the conventional super-junction VDMOS （CSJ-VDMOS） at the same high breakdown voltage （BV）.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60906022 and 60676051)the Natural Science Foundation of Tianjin,China (Grant No. 10JCYBJC01100)+1 种基金the Scientific Developing Foundation of Tianjin Education Commission,China (Grant No. 2011ZD02)the Jiangsu Natural Science Development Foundation for University,China (Grant No. 09KJB140006)
文摘The driving voltage of an organic light-emitting diode（OLED） is lowered by employing molybdenum trioxide（MoO3）/N,N＇-bis（naphthalene-1-yl）-N,N＇-bis（phe-nyl）-benzidine（NPB） multiple quantum well（MQW） structure in the hole transport layer.For the device with double quantum well（DQW） structure of ITO/[MoO3（2.5 nm）/NPB（20 nm）]2/Alq3（50 nm）/LiF（0.8 nm）/Al（120 nm）],the turn-on voltage is reduced to 2.8 V,which is lowered by 0.4 V compared with that of the control device（without MQW structures）,and the driving voltage is 5.6 V,which is reduced by 1 V compared with that of the control device at the 1000 cd/m2.In this work,the enhancement of the injection and transport ability for holes could reduce the driving voltage for the device with MQW structure,which is attributed not only to the reduced energy barrier between ITO and NPB,but also to the forming charge transfer complex between MoO3 and NPB induced by the interfacial doping effect of MoO3.
基金Project supported by the China Postdoctoral Science Foundation(Grant No.2018M640957)the Fundamental Research Funds for the Central Universities,China(Grant No.20101196761)+2 种基金the National Natural Science Foundation of China(Grant No.61904135)the National Defense Pre-Research Foundation of China(Grant No.31513020307)the Natural Science Foundation of Shaanxi Province of China(Grant No.2020JQ-316).
文摘A high performance InAlN/GaN high electron mobility transistor(HEMT)at low voltage operation(6-10 V drain voltage)has been fabricated.An 8 nm InAlN barrier layer is adopted to generate large 2DEG density thus to reduce sheet resistance.Highly scaled lateral dimension(1.2μm source-drain spacing)is to reduce access resistance.Both low sheet resistance of the InAlN/GaN structure and scaled lateral dimension contribute to an high extrinsic transconductance of 550 mS/mm and a large drain current of 2.3 A/mm with low on-resistance(Ron)of 0.9Ω·mm.Small signal measurement shows an fT/fmax of 131 GHz/196 GHz.Large signal measurement shows that the InAlN/GaN HEMT can yield 64.7%-52.7%(Vds=6-10 V)power added efficiency(PAE)associated with 1.6-2.4 W/mm output power density at 8 GHz.These results demonstrate that GaN-based HEMTs not only have advantages in the existing high voltage power and high frequency rf field,but also are attractive for low voltage mobile compatible rf applications.
基金financially supported by the National Natural Science Foundation of China(22125903,51872283,22109160,22005297)the Dalian Innovation Support Plan for High Level Talents(2019RT09)+6 种基金the The Joint Fund of the Yulin University and the Dalian National Laboratory For Clean Energy(DNL),CAS,DNL Cooperation Fund,CAS(DNL201912,DNL201915,DNL202016,DNL202019),DICP(DICP ZZBS201802,DICP I2020032)The Joint Fund of the Yulin University and the Dalian National Laboratory for Clean Energy(YLU-DNL Fund 2021002,YLU-DNL Fund 2021009)the China Postdoctoral Science Foundation(2021M693126,2020M680995,2021M703145,2021M693127)the International Postdoctoral Exchange Fellowship Program(Talent-Introduction Program)(YJ20210311)the Plan for promoting innovative talents of Education Department of Liaoning Province(LCR2018015)the Shenyang Youth Science and Technology Project(RC200444)the Natural Science Foundation of Liaoning Province(2021-MS-234)。
文摘Micro-supercapacitors(MSCs)are considered as highly competitive power sources for miniaturized electronics.However,narrow voltage window and poor anti-freezing properties of MSCs in conventional aqueous electrolytes lead to low energy density and limited environmental adaption.Herein,we report the construction of low-temperature and high-energy-density MSCs based on anti-freezing hybrid gel electrolytes(HGE)through introducing ethylene glycol(EG)additives into aqueous LiCl electrolyte.Since EG partially destroys hydrogen bond network among water molecules,the HGE exhibits maximum electrochemical stability window of 2.7 V and superior anti-freezing features with a glass transition temperature of-62.8℃.Further,the optimized MSCs using activated carbon microelectrodes possess impressive volumetric capacitance of 28.9 F cm^(-3)and energy density of 10.3 mWh cm^(-3)in the voltage of 1.6 V,2.6 times higher than MSCs tested in 1.2 V.Importantly,the MSCs display 68.3%capacitance retention even at-30℃ compared to the value at 25℃,and ultra-long cyclability with 85.7%of initial capacitance after 15,000 times,indicating extraordinary low-temperature performance.Besides,our devices offer favorable flexibility and modular integration.Therefore,this work provides a general strategy of realizing flexible,safe and anti-freezing microscale power sources,holding great potential towards subzero-temperature microelectronic applications.
基金Supported by the China National Science and Technology Major Project(2016ZX05024-006)Research Project of China National Offshore Oil Corporation(CNOOC-KJ125ZDXM07LTD02ZJ11)
文摘The characteristics of low permeability reservoirs and distribution of sweet spots in the Oligocene Zhuhai Formation of Wenchang A sag, Pearl River Basin were investigated by core observation and thin section analysis. The study results show that there develop the fine, medium and coarse sandstone reservoirs of tidal flat–fan delta facies, which are of mostly low permeability and locally medium permeability. There are two kinds of pore evolution patterns: oil charging first and densification later, the reservoirs featuring this pattern are mainly in the third member of Zhuhai Formation between the south fault zone and the sixth fault zone, and the pattern of densification first and gas charging later is widespread across the study area. Strong compaction and local calcium cementation are the key factors causing low permeability of the reservoirs in the Zhuhai Formation. Thick and coarse grain sand sedimentary body is the precondition to form "sweet spot" reservoirs. Weak compaction and cementation, dissolution, early hydrocarbon filling and authigenic chlorite coating are the main factors controlling formation of "sweet spot" reservoir. It is predicted that there develop between the south fault and sixth fault zones the Class Ⅰ "sweet spot" in medium compaction zone, Class Ⅱ "sweet spot" in nearly strong compaction zone, Class Ⅲ "sweet spot" reservoir in the nearly strong to strong compaction zone with oil charging at early stage, and Class IV "sweet spot" reservoir in the strong compaction and authigenic chlorite coating protection zone in the sixth fault zone.
文摘Rectifiers with high efficiency and high power density are crucial to the stable and efficient power supply of 5G communication base stations,which deserves in-depth investigation.In general,there are two key problems to be addressed:supporting both alternating current(AC)and direct current(DC)input,and minimizing the common-mode voltage as well as leakage current for safety reasons.In this paper,a hybrid five-level single-phase rectifier is proposed.A five-level topology is adopted in the upper arm,and a half-bridge diode topology is adopted in the lower arm.A dual closed-loop control strategy and a flying capacitor voltage regulation method are designed accordingly so that the compatibility of both AC and DC input is realized with low common voltage and small passive devices.Simulation and experimental results demonstrate the effectiveness and performance of the proposed rectifier.
基金Supported by the National Natural Science Foundation of China(Nos.11475013,11175011,11035007)
文摘A detector setup for the measurement of angular distribution of heavy-ion elastic scattering at energies around Coulomb barrier on the radioactive ion beam line in Lanzhou at the heavy-ion research facility in Lanzhou is designed.The beam profile and the scattering angles on the target are deduced by two parallel plate avalanche counters,and four sets of detector telescopes(including doublesided silicon strip detectors) are placed systematically with the beam line,incorporating with Monte Carlo simulations.The data of ^(16)O on ^(89)Y target were analyzed to compare with the simulation results.It is found that the simulated distribution is agreeable with the experimental data.By assuming the pure Rutherford scattering at small scattering angles,the angular distribution of elastic scattering of^(16)O+^(89)Y at low energies can be reasonably obtained.It indicates that this set of detector setup can be used for the measurement of angular distributions of heavy-ion elastic scattering at energies around Coulomb barrier.
基金The project supported by National Natural Science Foundation of China (No. 50477025)
文摘This paper is devoted to the simulation of the arc plasma in a simplified low-voltage circuit breaker chamber. Based on a group of coupled governing equations, a three-dimensional （3-D） arc plasma model is built and solved by a modified commercial code. Firstly, this paper presents a solution of the stationary state of the arc plasma and discusses the distribution of some parameters throughout the chamber. Secondly, with the ferromagnetic materials included, the balance of the stationary state is broken and a transient course is calculated. In light of the simulation results, the temperature distribution sequence, the arc motion and the plasma jet are then described and analyzed in detail.
基金Supported by Shanghai Synchrotron Radiation Facility
文摘In the storage ring RF system of Shanghai Synchrotron Radiation Facility,the clock distribution and the local oscillator are two parts of the digital low level radio frequency hardware board.In this paper,we designed and produced the clock distribution and the local oscillator board using the AD9858 and AD9510 chips.The results show that the phase noise of the local oscillator signal is lower than 100dBc/Hz with 50 kHz offset.
文摘Scaling problems and limitations of conventional silicon transistors have led the designers to exploit novel nano-technologies. One of the most promising and feasible nano-technologies is CNT(Carbon Nanotube) based transistors. In this paper, a high-speed and energy-efficient CNFET(Carbon Nanotube Field Effect Transistor) based Full Adder cell is proposed for nanotechnology. This design is simulated in various supply voltages, frequencies and load capacitors using HSPICE circuit simulator. Significant improvement is achieved in terms of speed and PDP(Power-Delay-Product) in comparison with other classical and state-of-the-art CMOS and CNFET-based designs, existing in the literature. The proposed Full Adder can also drive large load capacitance and works properly in low supply voltages.
基金supported by the National Natural Science Foundation of China (Grant Nos. 60806025 and 60976060)the National Laboratory of Analog Integrated Circuit (Grant No. 9140C0903070904)the Youth Teacher Foundation of the University of Electronic Science and Technology of China (Grant No. jx0721)
文摘A novel partial silicon-on-insulator （PSOI） high voltage device with a low-k （relative permittivity） dielectric buried layer （LK PSOI） and its breakdown mechanism are presented and investigated by MEDICI. At a low k value the electric field strength in the dielectric buried layer （EI） is enhanced and a Si window makes the substrate share the vertical drop, resulting in a high vertical breakdown voltage; in the lateral direction, a high electric field peak is introduced at the Si window, which modulates the electric field distribution in the SOI layer; consequently, a high breakdown voltage （BV） is obtained. The values of EI and BV of LK PSOI with ki = 2 on a 2μm thick SOI layer over 1μm thick buried layer are enhanced by 74% and 19%, respectively, compared with those of the conventional PSOI. Furthermore, the Si window also alleviates the self-heating effect.
基金supported by the Iran University of Science and Technology
文摘A novel low power and low voltage current mirror with a very low current copy error is presented and the principle of its operation is discussed. In this circuit, the gain boosting regulated cascode scheme is used to improve the output resistance, while using inverter as an amplifier. The simulation results with HSPICE in TSMC 0.18 μm CMOS technology are given, which verify the high performance of the proposed structure. Simulation results show an input resistance of 0.014 Ω and an output resistance of 3 GΩ. The current copy error is favorable as low as 0.002% together with an input （the minimum input voltage of Vin,min- 0.24 V） and an output （the minimum output voltage of Vout,min~ 0.16 V） compliances while working with the 1 V power supply and the 50 μA input current. The current copy error is near zero at the input current of 27 μA. It consumes only 76μW and introduces a very low output offset current of 50 pA.
