With the analysis of experiment and theory on GaN HEMT devices under DC sweep,an improved model for kink effect based on advanced SPICE model for high electron mobility transistors(ASM-HEMT)is pro⁃posed,considering th...With the analysis of experiment and theory on GaN HEMT devices under DC sweep,an improved model for kink effect based on advanced SPICE model for high electron mobility transistors(ASM-HEMT)is pro⁃posed,considering the relationship between the drain/gate-source voltage and kink effect.The improved model can not only accurately describe the trend of the drain-source current with the current collapse and kink effect,but also precisely fit different values of drain-source voltages at which the kink effect occurs under different gatesource voltages.Furthermore,it well characterizes the DC characteristics of GaN devices in the full operating range,with the fitting error less than 3%.To further verify the accuracy and convergence of the improved model,a load-pull system is built in ADS.The simulated result shows that although both the original ASM-HEMT and the improved model predict the output power for the maximum power matching of GaN devices well,the im⁃proved model predicts the power-added efficiency for the maximum efficiency matching more accurately,with 4%improved.展开更多
In this paper we present a new experimental observation using a conventional reflectometry technique,poloidal correlation reflectometry(PCR),in the Experimental Advanced Superconducting Tokamak(EAST).The turbulence sp...In this paper we present a new experimental observation using a conventional reflectometry technique,poloidal correlation reflectometry(PCR),in the Experimental Advanced Superconducting Tokamak(EAST).The turbulence spectrum detected by the PCR system exhibits an asymmetry and induced Doppler shift f_(D)during the internal kink mode(IKM)rotation phase.This Doppler shift f_(D)is the target measurement of Doppler reflectometry,but captured by conventional reflectometry.Results show that the Doppler shift f_(D)is modulated by the periodic changes in the effective angle between the probing wave and cutoff layer normal,but not by plasma turbulence.The fishbone mode and saturated long-lived mode are typical IKMs,and this modulation phenomenon is observed in both cases.Moreover,the value of the Doppler shift f_(D)is positively correlated with the amplitude of the IKM,even when the latter is small.However,the positive and negative frequency components of the Doppler shift f_(D)can be asymmetric,which is related to the plasma configuration.A simulated analysis is performed by ray tracing to verify these observations.These results establish a clear link between f_(D)and IKM rotation,and are helpful for studying the characteristics of IKM and related physical phenomena.展开更多
Up to now,the DNA molecule adsorbed on a surface was believed to always preserve its native structure.This belief implies a negligible contribution of lateral surface forces during and after DNA adsorption although th...Up to now,the DNA molecule adsorbed on a surface was believed to always preserve its native structure.This belief implies a negligible contribution of lateral surface forces during and after DNA adsorption although their impact has never been elucidated.High-resolution atomic force microscopy was used to observe that stiff DNA molecules kinetically trapped on monomolecular films comprising one-dimensional periodically charged lamellar templates as a single layer or as a sublayer are oversaturated by sharp discontinuous kinks and can also be locally melted and supercoiled.We argue that kink/anti-kink pairs are induced by an overcritical lateral bending stress(>30 pNnm)inevitable for the highly anisotropic 1D-1D electrostatic interaction of DNA and underlying rows of positive surface charges.In addition,the unexpected kink-inducing mechanical instability in the shape of the template-directed DNA confined between the positively charged lamellar sides is observed indicating the strong impact of helicity.The previously reported anomalously low values of the persistence length of the surface-adsorbed DNA are explained by the impact of the surface-induced low-scale bending.The sites of the local melting and supercoiling are convincingly introduced as other lateral stress-induced structural DNA anomalies by establishing a link with DNA high-force mechanics.The results open up the study in the completely unexplored area of the principally anomalous kinetically trapped DNA surface conformations in which the DNA local mechanical response to the surface-induced spatially modulated lateral electrostatic stress is essentially nonlinear.The underlying rich and complex in-plane nonlinear physics acts at the nanoscale beyond the scope of applicability of the worm-like chain approximation.展开更多
多晶硅薄膜晶体管(P-Si TFTs)技术在SOP(system on panel)显示应用中发挥着越来越重要的作用。随着尺寸的不断缩小,P-Si TFT的Kink效应越来越明显,对有源液晶显示矩阵和驱动电路的性能影响很大。对发生Kink效应的物理机制、二维数值仿...多晶硅薄膜晶体管(P-Si TFTs)技术在SOP(system on panel)显示应用中发挥着越来越重要的作用。随着尺寸的不断缩小,P-Si TFT的Kink效应越来越明显,对有源液晶显示矩阵和驱动电路的性能影响很大。对发生Kink效应的物理机制、二维数值仿真及其一维解析模型进行了分析,讨论了晶粒边界、沟道长度与Kink效应的关系,提出建立适合电路仿真的一维解析模型的关键与展望。展开更多
A semi-analytical method is introduced to study kink instability in cylindrical plasma with line-tied boundary conditions. The method is based on an expansion for magnetohydrodynamics （MHD） equations in one-dimensio...A semi-analytical method is introduced to study kink instability in cylindrical plasma with line-tied boundary conditions. The method is based on an expansion for magnetohydrodynamics （MHD） equations in one-dimensional （1D） radial eigenvalue problems by using Fourier transforms. The MHD equations then become an ordinary differential equation. This method is applicable to both ideal and non-ideal MHD problem. The effect of plasma pressure （P0） on kink instability is studied in a cylindrical geometry. Complex discrete spectra are pre- sented. Two-dimensional （2D） eigenfunctions with the line-tied boundary conditions are obtained. The growth rate and radial eigenfunctions are different in the two cases of P0 = 0 and P0 ≠ 0, which indicate that the effect of plasma pressure can not be ignored if it is large enough. This method allows us to understand the role of individual radial eigenfunctions, and is also computationally efficient compared to direct solutions of the MHD equations by the finite difference method.展开更多
介绍了部分耗尽型 SOI MOS 器件浮体状态下的 Kink 效应及对模拟电路的影响。阐述了 4 种常用体接触方式及其他消除部分耗尽型 SOI MOS 器件 Kink 效应的工艺方法,同时给出了部分耗尽型 SOIM O S F E T 工作在浮体状态下时模拟电路...介绍了部分耗尽型 SOI MOS 器件浮体状态下的 Kink 效应及对模拟电路的影响。阐述了 4 种常用体接触方式及其他消除部分耗尽型 SOI MOS 器件 Kink 效应的工艺方法,同时给出了部分耗尽型 SOIM O S F E T 工作在浮体状态下时模拟电路的设计方法。展开更多
A three-dimensional （3-D） transient model has been developed to investigate plasma deformation driven by a magnetic field and its influence on arc stability in a circuit breaker. The 3-D distribution of electric cur...A three-dimensional （3-D） transient model has been developed to investigate plasma deformation driven by a magnetic field and its influence on arc stability in a circuit breaker. The 3-D distribution of electric current density is obtained from a current continuity equation along with the generalized Ohm＇s law; while the magnetic field induced by the current flowing through the arc column is calculated by the magnetic vector potential equation. When gas interacts with an arc column, fundamental factors, such as Ampere＇s law, Ohm＇s law, the turbulence model, transport equations of mass, momentum and energy of plasma flow, have to be coupled for aria- lyzing the phenomenon. The coupled interactions between arc and plasma flow are described in the fl＇amework of time-dependent magnetohydrodynamic （MHD） equations in conjunction with a K-~ turbulence model. Simulations have been focused on sausage and kink instabilities in plasma （these phenomena are related tO pinch effects and electromagnetic fields）. The 3-D sjm- ulation reveals the relation between plasma deformation and instability phenomena, which affect arc stability during circuit breaker operation. Plasma deformation is the consequence of coupled interactions between the electromagnetic force and plasma flow described in simulations.展开更多
In this paper, a new current expression based on both the direct currect （DC） characteristics of the A1GaN/GaN high election mobility transistor （HEMT） and the hyperbolic tangent function tanh is proposed, by whic...In this paper, a new current expression based on both the direct currect （DC） characteristics of the A1GaN/GaN high election mobility transistor （HEMT） and the hyperbolic tangent function tanh is proposed, by which we can describe the kink effect of the A1GaN/GaN HEMT well. Then, an improved EEHEMT model including the proposed current expression is presented. The simulated and measured results of Ⅰ-Ⅴ, S-parameter, and radio frequency （RF） large-signal characteristics are compared for a self-developed on-wafer A1GaN/GaN HEMT with ten gate fingers each being 0.4-μm long and 125-p-m wide （Such an A1GaN/GaN HEMT is denoted as A1GaN/GaN HEMT （10 × 125 μm））. The improved large signal model simulates the Ⅰ-Ⅴ characteristic much more accurately than the original one, and its transconductance and RF characteristics are also in excellent agreement with the measured data.展开更多
基金Supported by the National Key R&D Program of China(2022YFF0707800,2022YFF0707801)Primary Research&Development Plan of Jiangsu Province(BE2022070,BE2022070-2)。
文摘With the analysis of experiment and theory on GaN HEMT devices under DC sweep,an improved model for kink effect based on advanced SPICE model for high electron mobility transistors(ASM-HEMT)is pro⁃posed,considering the relationship between the drain/gate-source voltage and kink effect.The improved model can not only accurately describe the trend of the drain-source current with the current collapse and kink effect,but also precisely fit different values of drain-source voltages at which the kink effect occurs under different gatesource voltages.Furthermore,it well characterizes the DC characteristics of GaN devices in the full operating range,with the fitting error less than 3%.To further verify the accuracy and convergence of the improved model,a load-pull system is built in ADS.The simulated result shows that although both the original ASM-HEMT and the improved model predict the output power for the maximum power matching of GaN devices well,the im⁃proved model predicts the power-added efficiency for the maximum efficiency matching more accurately,with 4%improved.
基金supported by the National Key R&D Program of China(Nos.2022YFE03050003,2022YFE03020004,2019YFE03080200 and 2022YFE03070004)National Natural Science Foundation of China(Nos.12275315,11875289,12175277 and 11975271)+3 种基金partly supported by the Youth Science and Technology Talents Support Program(2020)by Anhui Association for Science and Technology(No.RCTJ202009)the Science Foundation of Institute of Plasma Physics,Chinese Academy of Sciences(No.DSJJ2021-08)the China Postdoctoral Science Foundation(No.2021M703256)the Director Funding of Hefei Institutes of Physical Science,Chinese Academy of Sciences(No.YZJJ2022QN16)。
文摘In this paper we present a new experimental observation using a conventional reflectometry technique,poloidal correlation reflectometry(PCR),in the Experimental Advanced Superconducting Tokamak(EAST).The turbulence spectrum detected by the PCR system exhibits an asymmetry and induced Doppler shift f_(D)during the internal kink mode(IKM)rotation phase.This Doppler shift f_(D)is the target measurement of Doppler reflectometry,but captured by conventional reflectometry.Results show that the Doppler shift f_(D)is modulated by the periodic changes in the effective angle between the probing wave and cutoff layer normal,but not by plasma turbulence.The fishbone mode and saturated long-lived mode are typical IKMs,and this modulation phenomenon is observed in both cases.Moreover,the value of the Doppler shift f_(D)is positively correlated with the amplitude of the IKM,even when the latter is small.However,the positive and negative frequency components of the Doppler shift f_(D)can be asymmetric,which is related to the plasma configuration.A simulated analysis is performed by ray tracing to verify these observations.These results establish a clear link between f_(D)and IKM rotation,and are helpful for studying the characteristics of IKM and related physical phenomena.
基金This work was supported in part by a grant from Russian Scientific Foundation(Project No.17-75-30064).
文摘Up to now,the DNA molecule adsorbed on a surface was believed to always preserve its native structure.This belief implies a negligible contribution of lateral surface forces during and after DNA adsorption although their impact has never been elucidated.High-resolution atomic force microscopy was used to observe that stiff DNA molecules kinetically trapped on monomolecular films comprising one-dimensional periodically charged lamellar templates as a single layer or as a sublayer are oversaturated by sharp discontinuous kinks and can also be locally melted and supercoiled.We argue that kink/anti-kink pairs are induced by an overcritical lateral bending stress(>30 pNnm)inevitable for the highly anisotropic 1D-1D electrostatic interaction of DNA and underlying rows of positive surface charges.In addition,the unexpected kink-inducing mechanical instability in the shape of the template-directed DNA confined between the positively charged lamellar sides is observed indicating the strong impact of helicity.The previously reported anomalously low values of the persistence length of the surface-adsorbed DNA are explained by the impact of the surface-induced low-scale bending.The sites of the local melting and supercoiling are convincingly introduced as other lateral stress-induced structural DNA anomalies by establishing a link with DNA high-force mechanics.The results open up the study in the completely unexplored area of the principally anomalous kinetically trapped DNA surface conformations in which the DNA local mechanical response to the surface-induced spatially modulated lateral electrostatic stress is essentially nonlinear.The underlying rich and complex in-plane nonlinear physics acts at the nanoscale beyond the scope of applicability of the worm-like chain approximation.
文摘多晶硅薄膜晶体管(P-Si TFTs)技术在SOP(system on panel)显示应用中发挥着越来越重要的作用。随着尺寸的不断缩小,P-Si TFT的Kink效应越来越明显,对有源液晶显示矩阵和驱动电路的性能影响很大。对发生Kink效应的物理机制、二维数值仿真及其一维解析模型进行了分析,讨论了晶粒边界、沟道长度与Kink效应的关系,提出建立适合电路仿真的一维解析模型的关键与展望。
基金supported by National Basic Research Program of China (No.2008CB717801)National Natural Science Foundation of China (No.10875024)Laboratory of College and University Program of Liaoning Province of China (No.2008S059)
文摘A semi-analytical method is introduced to study kink instability in cylindrical plasma with line-tied boundary conditions. The method is based on an expansion for magnetohydrodynamics （MHD） equations in one-dimensional （1D） radial eigenvalue problems by using Fourier transforms. The MHD equations then become an ordinary differential equation. This method is applicable to both ideal and non-ideal MHD problem. The effect of plasma pressure （P0） on kink instability is studied in a cylindrical geometry. Complex discrete spectra are pre- sented. Two-dimensional （2D） eigenfunctions with the line-tied boundary conditions are obtained. The growth rate and radial eigenfunctions are different in the two cases of P0 = 0 and P0 ≠ 0, which indicate that the effect of plasma pressure can not be ignored if it is large enough. This method allows us to understand the role of individual radial eigenfunctions, and is also computationally efficient compared to direct solutions of the MHD equations by the finite difference method.
文摘A three-dimensional （3-D） transient model has been developed to investigate plasma deformation driven by a magnetic field and its influence on arc stability in a circuit breaker. The 3-D distribution of electric current density is obtained from a current continuity equation along with the generalized Ohm＇s law; while the magnetic field induced by the current flowing through the arc column is calculated by the magnetic vector potential equation. When gas interacts with an arc column, fundamental factors, such as Ampere＇s law, Ohm＇s law, the turbulence model, transport equations of mass, momentum and energy of plasma flow, have to be coupled for aria- lyzing the phenomenon. The coupled interactions between arc and plasma flow are described in the fl＇amework of time-dependent magnetohydrodynamic （MHD） equations in conjunction with a K-~ turbulence model. Simulations have been focused on sausage and kink instabilities in plasma （these phenomena are related tO pinch effects and electromagnetic fields）. The 3-D sjm- ulation reveals the relation between plasma deformation and instability phenomena, which affect arc stability during circuit breaker operation. Plasma deformation is the consequence of coupled interactions between the electromagnetic force and plasma flow described in simulations.
基金Project supported by the National Natural Science Foundation of China(Grant No.61334002)the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory(Grant No.ZHD201206)the Program for New Century Excellent Talents in University(Grant No.NCET-12-0915)
文摘In this paper, a new current expression based on both the direct currect （DC） characteristics of the A1GaN/GaN high election mobility transistor （HEMT） and the hyperbolic tangent function tanh is proposed, by which we can describe the kink effect of the A1GaN/GaN HEMT well. Then, an improved EEHEMT model including the proposed current expression is presented. The simulated and measured results of Ⅰ-Ⅴ, S-parameter, and radio frequency （RF） large-signal characteristics are compared for a self-developed on-wafer A1GaN/GaN HEMT with ten gate fingers each being 0.4-μm long and 125-p-m wide （Such an A1GaN/GaN HEMT is denoted as A1GaN/GaN HEMT （10 × 125 μm））. The improved large signal model simulates the Ⅰ-Ⅴ characteristic much more accurately than the original one, and its transconductance and RF characteristics are also in excellent agreement with the measured data.
