Direct current （DC） and pulsed measurements are performed to determine the degradation mechanisms of A1GaN/GaN high electron mobility transistors （HEMTs） under high temperature. The degradation of the DC character...Direct current （DC） and pulsed measurements are performed to determine the degradation mechanisms of A1GaN/GaN high electron mobility transistors （HEMTs） under high temperature. The degradation of the DC characteristics is mainly attributed to the reduction in the density and the mobility of the two-dimensional electron gas （2DEG）. The pulsed measurements indicate that the trap assisted tunneling is the dominant gate leakage mechanism in the temperature range of interest. The traps in the barrier layer become active as the temperature increases, which is conducive to the electron tunneling between the gate and the channel. The enhancement of the tunneling results in the weakening of the current collapse effects, as the electrons trapped by the barrier traps can escape more easily at the higher temperature.展开更多
In this paper,high temperature direct current（DC） performance of bilayer epitaxial graphene device on SiC substrate is studied in a temperature range from 25℃ to 200℃.At a gate voltage of-8 V（far from Dirac point...In this paper,high temperature direct current（DC） performance of bilayer epitaxial graphene device on SiC substrate is studied in a temperature range from 25℃ to 200℃.At a gate voltage of-8 V（far from Dirac point）,the drainsource current decreases obviously with increasing temperature,but it has little change at a gate bias of ＋8 V（near Dirac point）.The competing interactions between scattering and thermal activation are responsible for the different reduction tendencies.Four different kinds of scatterings are taken into account to qualitatively analyze the carrier mobility under different temperatures.The devices exhibit almost unchanged DC performances after high temperature measurements at 200℃ for 5 hours in air ambience,demonstrating the high thermal stabilities of the bilayer epitaxial graphene devices.展开更多
In order to investigate the physical and mechanical properties of sandstone containing fissures after exposure to high temperatures,fissures with different angles α were prefabricated in the plate sandstone samples,a...In order to investigate the physical and mechanical properties of sandstone containing fissures after exposure to high temperatures,fissures with different angles α were prefabricated in the plate sandstone samples,and the processed samples were then heated at 5 different temperatures.Indoor uniaxial compression was conducted to analyze the change rules of physical properties of sandstone after exposure to high temperature,and the deformation,strength and failure characteristics of sandstone containing fissures.The results show that,with increasing temperature,the volume of sandstone increases gradually while the quality and density decrease gradually,and the color of sandstone remains basically unchanged while the brightness increases markedly when the temperature is higher than 585 ℃;the peak strength of sandstone containing fissures first decreases then increases when the temperature is between 25℃and 400℃.The peak strain of sandstone containing fissures increases gradually while the average modulus decreases gradually with increasing temperature,and the mechanical properties of sandstone show obvious deterioration after 400 ℃.The peak strain of sandstone containing fissures increases gradually while the average modulus decreases gradually with increasing temperature;with increasing angle αof the fissure,the evolution characteristics of the macro-mechanical parameters of sandstone are closely related to the their own mechanical properties.When the temperature is 800 ℃,the correlation between the peak strength and average modulus of sandstone and the angle α of the fissure is obviously weakened.The failure modes of sandstone containing fissures after high temperature exposure are of three different kinds including:tensile crack failure,tensile and shear cracks mixed failure,and shear crack failure.Tensile and shear crack mixed failure occur mainly at low temperatures and small angles;tensile crack failure occurs at high temperatures and large angles.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.60736033)
文摘Direct current （DC） and pulsed measurements are performed to determine the degradation mechanisms of A1GaN/GaN high electron mobility transistors （HEMTs） under high temperature. The degradation of the DC characteristics is mainly attributed to the reduction in the density and the mobility of the two-dimensional electron gas （2DEG）. The pulsed measurements indicate that the trap assisted tunneling is the dominant gate leakage mechanism in the temperature range of interest. The traps in the barrier layer become active as the temperature increases, which is conducive to the electron tunneling between the gate and the channel. The enhancement of the tunneling results in the weakening of the current collapse effects, as the electrons trapped by the barrier traps can escape more easily at the higher temperature.
基金Project supported by the National Natural Science Foundation of China(Grant No.61306006)
文摘In this paper,high temperature direct current（DC） performance of bilayer epitaxial graphene device on SiC substrate is studied in a temperature range from 25℃ to 200℃.At a gate voltage of-8 V（far from Dirac point）,the drainsource current decreases obviously with increasing temperature,but it has little change at a gate bias of ＋8 V（near Dirac point）.The competing interactions between scattering and thermal activation are responsible for the different reduction tendencies.Four different kinds of scatterings are taken into account to qualitatively analyze the carrier mobility under different temperatures.The devices exhibit almost unchanged DC performances after high temperature measurements at 200℃ for 5 hours in air ambience,demonstrating the high thermal stabilities of the bilayer epitaxial graphene devices.
基金supported by the State Key Development Program for Basic Research of China(No.2013CB036003)the National Natural Science Foundation of China(No.51374198)the CUMT Innovation and Entrepreneurship Fund for Undergraduates(No.201509)
文摘In order to investigate the physical and mechanical properties of sandstone containing fissures after exposure to high temperatures,fissures with different angles α were prefabricated in the plate sandstone samples,and the processed samples were then heated at 5 different temperatures.Indoor uniaxial compression was conducted to analyze the change rules of physical properties of sandstone after exposure to high temperature,and the deformation,strength and failure characteristics of sandstone containing fissures.The results show that,with increasing temperature,the volume of sandstone increases gradually while the quality and density decrease gradually,and the color of sandstone remains basically unchanged while the brightness increases markedly when the temperature is higher than 585 ℃;the peak strength of sandstone containing fissures first decreases then increases when the temperature is between 25℃and 400℃.The peak strain of sandstone containing fissures increases gradually while the average modulus decreases gradually with increasing temperature,and the mechanical properties of sandstone show obvious deterioration after 400 ℃.The peak strain of sandstone containing fissures increases gradually while the average modulus decreases gradually with increasing temperature;with increasing angle αof the fissure,the evolution characteristics of the macro-mechanical parameters of sandstone are closely related to the their own mechanical properties.When the temperature is 800 ℃,the correlation between the peak strength and average modulus of sandstone and the angle α of the fissure is obviously weakened.The failure modes of sandstone containing fissures after high temperature exposure are of three different kinds including:tensile crack failure,tensile and shear cracks mixed failure,and shear crack failure.Tensile and shear crack mixed failure occur mainly at low temperatures and small angles;tensile crack failure occurs at high temperatures and large angles.
