Compared with bulk-silicon technology, silicon-on-insulator (SOI) technology possesses many advan-tages but it is inevitable that the buried silicon dioxide layer also thermally insulates the metal – oxide – silicon...Compared with bulk-silicon technology, silicon-on-insulator (SOI) technology possesses many advan-tages but it is inevitable that the buried silicon dioxide layer also thermally insulates the metal – oxide – silicon field-effect transistors (MOSFETs) from the bulk due to the low thermal conductivity. One of the alternative insulator to replace the buried oxide layer is aluminum nitride (AlN), which has a thermal conductivity that is about 200 times higher than that of SiO2 (320 W·m ? 1·K? 1 versus 1.4 W·m? 1·K? 1). To investigate the self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride (SOAN) substrate, a two-dimensional numerical analysis is performed by using a device simulator called MEDICI run on a Solaris workstation to simulate the electri-cal characteristics and temperature distribution by comparing with those of bulk and standard SOI MOSFETs. Our study suggests that AlN is a suitable alternative to silicon dioxide as a buried dielectric in SOI and expands the appli-cations of SOI to high temperature conditions.展开更多
An inherent self-heating effect of the silicon-on-insulator (SOI) devices limits their application at high current levels. In this paper a novel solution to reduce the self-heating effect is proposed, based on N+ and ...An inherent self-heating effect of the silicon-on-insulator (SOI) devices limits their application at high current levels. In this paper a novel solution to reduce the self-heating effect is proposed, based on N+ and O+ co-implantation into silicon wafer to form a new buried layer structure. This new structure was simulated using Medici program, and the temperature distribution and output characteristics were compared with those of the conventional SOI counterparts. As expected, a reduction of self-heating effect in the novel SOI device was observed.展开更多
A possible heating effect on the process of high deposition rate microcrystalline silicon has been studied. It includes the discharge time-accumulating heating effect, discharge power, inter-electrode distance, and to...A possible heating effect on the process of high deposition rate microcrystalline silicon has been studied. It includes the discharge time-accumulating heating effect, discharge power, inter-electrode distance, and total gas flow rate induced heating effect. It is found that the heating effects mentioned above are in some ways quite similar to and in other ways very different from each other. However, all of them will directly or indirectly cause the increase of the substrate surface temperature during the process of depositing microcrystalline silicon thin films, which will affect the properties of the materials with increasing time. This phenomenon is very serious for the high deposition rate of microcrystalline silicon thin films because of the high input power and the relatively small inter-electrode distance needed. Through analysis of the heating effects occurring in the process of depositing microcrystalline silicon, it is proposed that the discharge power and the heating temperature should be as low as possible, and the total gas flow rate and the inter-electrode distance should be suitable so that device-grade high quality deposition rate microcrystalline silicon thin films can be fabricated.展开更多
Dielectrophoresis(DEP)technology has become important application of microfluidic technology to manipulate particles.By using a local modulating electric field to control the combination of electroosmotic microvortice...Dielectrophoresis(DEP)technology has become important application of microfluidic technology to manipulate particles.By using a local modulating electric field to control the combination of electroosmotic microvortices and DEP,our group proposed a device using a direct current(DC)electric field to achieve continuous particle separation.In this paper,the influence of the Joule heating effect on the continuous separation of particles is analyzed.Results show that the Joule heating effect is caused by the local electric field,and the Joule heating effect caused by adjusting the modulating voltage is more significant than that by driving voltage.Moreover,a non-uniform temperature distribution exists in the channel due to the Joule heating effect,and the temperature is the highest at the midpoint of the modulating electrodes.The channel flux can be enhanced,and the enhancement of both the channel flux and temperature is more obvious for a stronger Joule heating effect.In addition,the ability of the vortices to trap particles is enhanced since a larger DEP force is exerted on the particles with the Joule heating effect;and the ability of the vortex to capture particles is stronger with a stronger Joule heating effect.The separation efficiency can also be increased because perfect separation is achieved at a higher channel flux.Parameter optimization of the separation device,such as the convective heat transfer coefficient of the channel wall,the length of modulating electrode,and the width of the channel,is performed.展开更多
A new self-heating effect model for 4H-SiC MESFETs is proposed based on a combination of an analytical and a computer aided design （CAD） oriented drain current model. The circuit oriented expressions of 4H-SiC low-f...A new self-heating effect model for 4H-SiC MESFETs is proposed based on a combination of an analytical and a computer aided design （CAD） oriented drain current model. The circuit oriented expressions of 4H-SiC low-field electron mobility and incomplete ionization rate, which are related to temperature, are presented in this model, which are used to estimate the self-heating effect of 4H-SiC MESFETs. The verification of the present model is made, and the good agreement between simulated results and measured data of DC I - V curves with the self-heating effect is obtained.展开更多
In the previous study of longitudinal spin Seebeck effect（LSSE）, the thermal gradient was often generated by inserting the sample between the cool bath and the hot bath. For practical use, this method is too cumbers...In the previous study of longitudinal spin Seebeck effect（LSSE）, the thermal gradient was often generated by inserting the sample between the cool bath and the hot bath. For practical use, this method is too cumbersome to be easily integrated into modern electrical circuits. Since the laser can be easily focused into a small region, it will be more convenient and friendly to the integrated circuit. In this paper, we systematically investigate the LSSE and spin Hall magnetoresistance（SMR） of the Pt/Y_3 Fe_5 O_（12） heterostructure under focused laser-heating. We find that the extremely large voltage of inverse spin Hall effect（VISHE） can be obtained by reducing the diameter of laser or increasing the number of light spots.Meanwhile, even under the illumination of the ultraviolet light which will excite the electron from the valence band to the conduction band in yttrium iron garnet（YIG）, the magnitude of SMR is nearly constant. It indicates that the spin transport behavior of the adjacent Pt is independent of the electron configuration of YIG. The laser-heating method to generate LSSE will be very promising for modern integrated electronic circuits and will promote the application of spin caloritronics in practice.展开更多
The characteristics of adsorption, desorption, and diffusion of gas in tectonic coal are important for the prediction of coal and gas outbursts. Three types of coal samples, of which both metamorphic grade and degree ...The characteristics of adsorption, desorption, and diffusion of gas in tectonic coal are important for the prediction of coal and gas outbursts. Three types of coal samples, of which both metamorphic grade and degree of damage is different, were selected from Tongchun, Qilin, and Pingdingshan mines. Using a series of experiments in an electrostatic field, we analyzed the characteristics of gas adsorption and diffusion in tectonic coal. We found that gas adsorption in coal conforms to the Langmuir equation in an electrostatic field. Both the depth of the adsorption potential well and the coal molecular electroneg- ativity increases under the action of an electrostatic field. A Joule heating effect was caused by changing the coal-gas system conductivity in an electrostatic field. The quantity of gas adsorbed and AP result from competition between the depth of the adsorption potential well, the coal molecular electronegativ- ity, and the Joule heating effect. △P peaks when the three factors control behavior equally. Compared with anthracite, the impact of the electrostatic field on the gas diffusion capacity of middle and high rank coals is greater. Compared with the original coal, the gas adsorption quantity,△P, and the gas diffusion capacity of tectonic coal are greater in an electrostatic field. In addition, the smaller the particle size of tectonic coal, the larger the△P.展开更多
A non-depletion floating layer silicon-on-insulator （NFL SOI） lateral double-diffused metal–oxide–semiconductor （LDMOS） is proposed and the NFL-assisted modulated field （NFLAMF） principle is investigated in th...A non-depletion floating layer silicon-on-insulator （NFL SOI） lateral double-diffused metal–oxide–semiconductor （LDMOS） is proposed and the NFL-assisted modulated field （NFLAMF） principle is investigated in this paper. Based on this principle, the floating layer can pin the potential for modulating bulk field. In particular, the accumulated high concentration of holes at the bottom of the NFL can efficiently shield the electric field of the SOI layer and enhance the dielectric field in the buried oxide layer （BOX）. At variation of back-gate bias, the shielding charges of NFL can also eliminate back-gate effects. The simulated results indicate that the breakdown voltage （BV） is increased from 315 V to 558 V compared to the conventional reduced surface field （RESURF） SOI （CSOI） LDMOS, yielding a 77% improvement. Furthermore, due to the field shielding effect of the NFL, the device can maintain the same breakdown voltage of 558 V with a thinner BOX to resolve the thermal problem in an SOI device.展开更多
基金Supported by the Special Funds for Major State Basic Research Projects (No.G2000036506)the National Natural Science Foundation of China (No. 60476006)
文摘Compared with bulk-silicon technology, silicon-on-insulator (SOI) technology possesses many advan-tages but it is inevitable that the buried silicon dioxide layer also thermally insulates the metal – oxide – silicon field-effect transistors (MOSFETs) from the bulk due to the low thermal conductivity. One of the alternative insulator to replace the buried oxide layer is aluminum nitride (AlN), which has a thermal conductivity that is about 200 times higher than that of SiO2 (320 W·m ? 1·K? 1 versus 1.4 W·m? 1·K? 1). To investigate the self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride (SOAN) substrate, a two-dimensional numerical analysis is performed by using a device simulator called MEDICI run on a Solaris workstation to simulate the electri-cal characteristics and temperature distribution by comparing with those of bulk and standard SOI MOSFETs. Our study suggests that AlN is a suitable alternative to silicon dioxide as a buried dielectric in SOI and expands the appli-cations of SOI to high temperature conditions.
基金Supported by the Special Funds for Major State Basic Research Projects(NO.G20000365)and the National Natural Science Foundation of China(No.90101012)
文摘An inherent self-heating effect of the silicon-on-insulator (SOI) devices limits their application at high current levels. In this paper a novel solution to reduce the self-heating effect is proposed, based on N+ and O+ co-implantation into silicon wafer to form a new buried layer structure. This new structure was simulated using Medici program, and the temperature distribution and output characteristics were compared with those of the conventional SOI counterparts. As expected, a reduction of self-heating effect in the novel SOI device was observed.
基金Project supported by Hi-Tech Research and Development Program of China (Grant Nos. 2007AA05Z436 and 2009AA050602)Science and Technology Support Project of Tianjin (Grant No. 08ZCKFGX03500)+3 种基金National Basic Research Program of China(Grant Nos. 2006CB202602 and 2006CB202603)National Natural Science Foundation of China (Grant No. 60976051)International Cooperation Project between China-Greece Government (Grant Nos. 2006DFA62390 and 2009DFA62580)Program for New Century Excellent Talents in University of China (Grant No. NCET-08-0295)
文摘A possible heating effect on the process of high deposition rate microcrystalline silicon has been studied. It includes the discharge time-accumulating heating effect, discharge power, inter-electrode distance, and total gas flow rate induced heating effect. It is found that the heating effects mentioned above are in some ways quite similar to and in other ways very different from each other. However, all of them will directly or indirectly cause the increase of the substrate surface temperature during the process of depositing microcrystalline silicon thin films, which will affect the properties of the materials with increasing time. This phenomenon is very serious for the high deposition rate of microcrystalline silicon thin films because of the high input power and the relatively small inter-electrode distance needed. Through analysis of the heating effects occurring in the process of depositing microcrystalline silicon, it is proposed that the discharge power and the heating temperature should be as low as possible, and the total gas flow rate and the inter-electrode distance should be suitable so that device-grade high quality deposition rate microcrystalline silicon thin films can be fabricated.
基金Project supported by the National Natural Science Foundation of China(Grant No.11572139).
文摘Dielectrophoresis(DEP)technology has become important application of microfluidic technology to manipulate particles.By using a local modulating electric field to control the combination of electroosmotic microvortices and DEP,our group proposed a device using a direct current(DC)electric field to achieve continuous particle separation.In this paper,the influence of the Joule heating effect on the continuous separation of particles is analyzed.Results show that the Joule heating effect is caused by the local electric field,and the Joule heating effect caused by adjusting the modulating voltage is more significant than that by driving voltage.Moreover,a non-uniform temperature distribution exists in the channel due to the Joule heating effect,and the temperature is the highest at the midpoint of the modulating electrodes.The channel flux can be enhanced,and the enhancement of both the channel flux and temperature is more obvious for a stronger Joule heating effect.In addition,the ability of the vortices to trap particles is enhanced since a larger DEP force is exerted on the particles with the Joule heating effect;and the ability of the vortex to capture particles is stronger with a stronger Joule heating effect.The separation efficiency can also be increased because perfect separation is achieved at a higher channel flux.Parameter optimization of the separation device,such as the convective heat transfer coefficient of the channel wall,the length of modulating electrode,and the width of the channel,is performed.
基金Project supported by the National Defense Foundation of China (Grant No 51327010101)the National Natural Science Foundation of China (Grant No 60606022)
文摘A new self-heating effect model for 4H-SiC MESFETs is proposed based on a combination of an analytical and a computer aided design （CAD） oriented drain current model. The circuit oriented expressions of 4H-SiC low-field electron mobility and incomplete ionization rate, which are related to temperature, are presented in this model, which are used to estimate the self-heating effect of 4H-SiC MESFETs. The verification of the present model is made, and the good agreement between simulated results and measured data of DC I - V curves with the self-heating effect is obtained.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11604265,51471134,51572222,and 11704386)the Fundamental Research Funds for the Central Universities,China(Grant Nos.3102018zy044 and 3102017jc01001)
文摘In the previous study of longitudinal spin Seebeck effect（LSSE）, the thermal gradient was often generated by inserting the sample between the cool bath and the hot bath. For practical use, this method is too cumbersome to be easily integrated into modern electrical circuits. Since the laser can be easily focused into a small region, it will be more convenient and friendly to the integrated circuit. In this paper, we systematically investigate the LSSE and spin Hall magnetoresistance（SMR） of the Pt/Y_3 Fe_5 O_（12） heterostructure under focused laser-heating. We find that the extremely large voltage of inverse spin Hall effect（VISHE） can be obtained by reducing the diameter of laser or increasing the number of light spots.Meanwhile, even under the illumination of the ultraviolet light which will excite the electron from the valence band to the conduction band in yttrium iron garnet（YIG）, the magnitude of SMR is nearly constant. It indicates that the spin transport behavior of the adjacent Pt is independent of the electron configuration of YIG. The laser-heating method to generate LSSE will be very promising for modern integrated electronic circuits and will promote the application of spin caloritronics in practice.
基金the National Natural Science Foundation of China(No.41272177)the Henan Polytechnic University Doctor Foundation(No.WS2013A11)
文摘The characteristics of adsorption, desorption, and diffusion of gas in tectonic coal are important for the prediction of coal and gas outbursts. Three types of coal samples, of which both metamorphic grade and degree of damage is different, were selected from Tongchun, Qilin, and Pingdingshan mines. Using a series of experiments in an electrostatic field, we analyzed the characteristics of gas adsorption and diffusion in tectonic coal. We found that gas adsorption in coal conforms to the Langmuir equation in an electrostatic field. Both the depth of the adsorption potential well and the coal molecular electroneg- ativity increases under the action of an electrostatic field. A Joule heating effect was caused by changing the coal-gas system conductivity in an electrostatic field. The quantity of gas adsorbed and AP result from competition between the depth of the adsorption potential well, the coal molecular electronegativ- ity, and the Joule heating effect. △P peaks when the three factors control behavior equally. Compared with anthracite, the impact of the electrostatic field on the gas diffusion capacity of middle and high rank coals is greater. Compared with the original coal, the gas adsorption quantity,△P, and the gas diffusion capacity of tectonic coal are greater in an electrostatic field. In addition, the smaller the particle size of tectonic coal, the larger the△P.
文摘A non-depletion floating layer silicon-on-insulator （NFL SOI） lateral double-diffused metal–oxide–semiconductor （LDMOS） is proposed and the NFL-assisted modulated field （NFLAMF） principle is investigated in this paper. Based on this principle, the floating layer can pin the potential for modulating bulk field. In particular, the accumulated high concentration of holes at the bottom of the NFL can efficiently shield the electric field of the SOI layer and enhance the dielectric field in the buried oxide layer （BOX）. At variation of back-gate bias, the shielding charges of NFL can also eliminate back-gate effects. The simulated results indicate that the breakdown voltage （BV） is increased from 315 V to 558 V compared to the conventional reduced surface field （RESURF） SOI （CSOI） LDMOS, yielding a 77% improvement. Furthermore, due to the field shielding effect of the NFL, the device can maintain the same breakdown voltage of 558 V with a thinner BOX to resolve the thermal problem in an SOI device.
