We propose a scheme for the implementation of remote controlled-NOT gates and entanglement swapping via geometric phase gates in ion-trap systems. The proposed scheme uses the two ground states of the A-type ions as m...We propose a scheme for the implementation of remote controlled-NOT gates and entanglement swapping via geometric phase gates in ion-trap systems. The proposed scheme uses the two ground states of the A-type ions as memory instead of the vibrational mode. And the system is robust against the spontaneous radiation and the dephasing.展开更多
High fidelity two-qubit gates are fundamental for scaling up the superconducting qubit number.We use two qubits coupled via a frequency-tunable coupler which can adjust the coupling strength,and demonstrate the CZ gat...High fidelity two-qubit gates are fundamental for scaling up the superconducting qubit number.We use two qubits coupled via a frequency-tunable coupler which can adjust the coupling strength,and demonstrate the CZ gate using two different schemes,adiabatic and diabatic methods.The Clifford based randomized benchmarking(RB) method is used to assess and optimize the CZ gate fidelity.The fidelities of adiabatic and diabatic CZ gates are 99.53(8)% and 98.72(2)%,respectively.We also analyze the errors induced by the decoherence.Comparing to 30 ns duration time of adiabatic CZ gate,the duration time of diabatic CZ gate is 19 ns,revealing lower incoherence error rate r’_(incoherent),int=0.0197(5) compared to r_(incoherent,int)=0.0223(3).展开更多
Using the dynamical properties of the polarization bistability that depends on the detuning of the injected light,we propose a novel approach to implement reliable all-optical stochastic logic gates in the cascaded ve...Using the dynamical properties of the polarization bistability that depends on the detuning of the injected light,we propose a novel approach to implement reliable all-optical stochastic logic gates in the cascaded vertical cavity surface emitting lasers（VCSELs） with optical-injection.Here,two logic inputs are encoded in the detuning of the injected light from a tunable CW laser.The logic outputs are decoded from the two orthogonal polarization lights emitted from the optically injected VCSELs.For the same logic inputs,under electro-optic modulation,we perform various digital signal processing（NOT,AND,NAND,XOR,XNOR,OR,NOR） in the all-optical domain by controlling the logic operation of the applied electric field.Also we explore their delay storages by using the mechanism of the generalized chaotic synchronization.To quantify the reliabilities of these logic gates,we further demonstrate their success probabilities.展开更多
We propose a scheme for implementing nongeometric phase gates fbr two trapped ions via adiabatic passage of dark states. During the operation, the vibrational mode is only virtually excited, thus the scheme is insensi...We propose a scheme for implementing nongeometric phase gates fbr two trapped ions via adiabatic passage of dark states. During the operation, the vibrational mode is only virtually excited, thus the scheme is insensitive to heating. Furthermore, the spontaneous emission is suppressed since the ions are always in the electronic ground states. The scheme is robust against small fluctuations of parameters, and the conditional phase is tunable.展开更多
Schemes for two-qubit and three-qubit controlled gates based on cross-Kerr nonlinearity are proposed in this paper.The probability of the success of these gates can be increased by quantum nondemolition detectors,whic...Schemes for two-qubit and three-qubit controlled gates based on cross-Kerr nonlinearity are proposed in this paper.The probability of the success of these gates can be increased by quantum nondemolition detectors,which are used to judge which paths the signal photons pass through.These schemes are almost deterministic and require no ancilla photon.The advantages of these gates over the existing ones include less resource consumption and a higher probability of success,which make our schemes more feasible with current technology.展开更多
Electrochemical logical operations utilizing biological molecules(protein or DNA), which can be used in disease diagnostics and bio-computing, have attracted great research interest. However, the existing logic operat...Electrochemical logical operations utilizing biological molecules(protein or DNA), which can be used in disease diagnostics and bio-computing, have attracted great research interest. However, the existing logic operations, being realized on macroscopic electrode, are not suitable for implantable logic devices. Here, we demonstrate DNA-based logic gates with electrochemical signal as output combined with gold flower microelectrodes. The designed logic gates are of fast response, enzyme-free, and micrometer scale. They perform well in either pure solution or complex matrices, such as fetal bovine serum,suggesting great potential for in vivo applications.展开更多
Strained-Si0.73Ge0.27 channels are successfully integrated with high-R/metal gates in p-type metai-oxide- semi- conductor field effect transistors （pMOSFETs） using the replacement post-gate process. A silicon cap an...Strained-Si0.73Ge0.27 channels are successfully integrated with high-R/metal gates in p-type metai-oxide- semi- conductor field effect transistors （pMOSFETs） using the replacement post-gate process. A silicon cap and oxide inter layers are inserted between Si0.73Ge0.27 and high-κ dielectric to improve the interface. The fab- ricated Si0.73Ge0.27 pMOSFETs with gate length of 3Onto exhibit good performance with high drive current （~428μA/μm at VDD = 1 V） and suppressed short-channel effects （DIBL^77mV/V and SS^90mV/decade）. It is found that the enhancement of effective hole mobility is up to 200% in long-gate-length Si0.73Ge0.27-channel pMOSFETs compared with the corresponding silicon transistors. The improvement of device performance is reduced due to strain relaxation as the gate length decreases, while 26% increase of the drive current is still obtained for 30-nm-gate-length Si0.73Ge0.27 devices.展开更多
Skyrmions in synthetic antiferromagnetic(SAF) systems have attracted much attention in recent years due to their superior stability, high-speed mobility, and completely compensated skyrmion Hall effect. They are promi...Skyrmions in synthetic antiferromagnetic(SAF) systems have attracted much attention in recent years due to their superior stability, high-speed mobility, and completely compensated skyrmion Hall effect. They are promising building blocks for the next generation of magnetic storage and computing devices with ultra-low energy and ultra-high density.Here, we theoretically investigate the motion of a skyrmion in an SAF bilayer racetrack and find the velocity of a skyrmion can be controlled jointly by the edge effect and the driving force induced by the spin current. Furthermore, we propose a logic gate that can realize different logic functions of logic AND, OR, NOT, NAND, NOR, and XOR gates. Several effects including the spin–orbit torque, the skyrmion Hall effect, skyrmion–skyrmion repulsion, and skyrmion–edge interaction are considered in this design. Our work may provide a way to utilize the SAF skyrmion as a versatile information carrier for future energy-efficient logic gates.展开更多
A novel enhancement-mode AlGaN/GaN high electron mobility transistor（HEMT） is proposed and studied.Specifically,several split floating gates（FGs） with negative charges are inserted to the conventional MIS structur...A novel enhancement-mode AlGaN/GaN high electron mobility transistor（HEMT） is proposed and studied.Specifically,several split floating gates（FGs） with negative charges are inserted to the conventional MIS structure.The simulation results revealed that the V_（th） decreases with the increase of polarization sheet charge density and the tunnel dielectric（between FGs and AlGaN） thickness,while it increases with the increase of FGs sheet charge density and blocking dielectric（between FGs and control gate） thickness.In the case of the same gate length,the V_（th） will left shift with decreasing FG length.More interestingly,the split FGs could significantly reduce the device failure probability in comparison with the single large area FG structure.展开更多
We propose a scheme for implementing conditional quantum phase gates for two four-state atoms trapped in a cavity. The two ground states of the atoms are coupled through two Raman processes induced by the cavity mode ...We propose a scheme for implementing conditional quantum phase gates for two four-state atoms trapped in a cavity. The two ground states of the atoms are coupled through two Raman processes induced by the cavity mode and two classical fields. Under certain conditions nonresonant Raman processes lead to two-atom coupling and can be used to produce conditional phase gates. The scheme is insensitive to cavity decay, thermal photons, and atomic spontaneous emission. The scheme does not require individual addressing of the atoms.展开更多
Based on squeezed operators this paper has implemented an ideal unconventional geometric quantum gate （GQG） in ion trap-optical cavity system by radiating the trapped ions with the cavity field of frequency ωc and ...Based on squeezed operators this paper has implemented an ideal unconventional geometric quantum gate （GQG） in ion trap-optical cavity system by radiating the trapped ions with the cavity field of frequency ωc and an external laser field of frequency ωL. It can ensure that the gate time is shorter than the coherence time for qubits and the decay time of the optical cavity by appropriately tuning the ionic transition frequency ω0, the frequencies of the cavity mode ωc and the vibrational mode v. It has also realized the unconventional GQG under the influence of the cavity decay based on the squeezed-like operators and found that the present scheme works well for the smaller cavity decay by investigating the corresponding fidelity and success probability.展开更多
Logic gates are fundamental structural components in all modern digital electronic devices. Here, nonequilibrium Green's functions are incorporated with the density functional theory to verify the thermal spin tra...Logic gates are fundamental structural components in all modern digital electronic devices. Here, nonequilibrium Green's functions are incorporated with the density functional theory to verify the thermal spin transport features of the single-molecule spintronic devices constructed by a single molecule in series or parallel connected with graphene nanoribbons electrodes. Our calculations demonstrate that the electric field can manipulate the spin-polarized current. Then, a complete set of thermal spin molecular logic gates are proposed, including AND, OR, and NOT gates. The mentioned logic gates enable different designs of complex thermal spin molecular logic functions and facilitate the electric field control of thermal spin molecular devices.展开更多
The shrinking silicon feature size causes the continuous increment of the aging effect due to the negative bias temperature instability （NBTI）, which becomes a potential stopper for IC development. As the basis of c...The shrinking silicon feature size causes the continuous increment of the aging effect due to the negative bias temperature instability （NBTI）, which becomes a potential stopper for IC development. As the basis of circuit-level aging protection, an efficient aging critical-gate identification method is crucially required to select a set of gates for protection to guarantee the normal lifetime of the circuits. The existing critical-gate identification methods always depend on a critical path set which contains so many paths that its generation procedure requires undesirable CPU runtime; furthermore, these methods can achieve a better solution with taking account of the topological connection. This paper proposes a time-efficient critical gates identification method with topological connection analysis, which chooses a small set of critical gates. Experiments over many circuits of ITC99 and ISCAS benchmark demonstrate that, to guarantee the normal lifetime （e.g., 10 years） of each circuit, our method achieves a 3.97x speedup and saves as much as 27.21% area overhead compared with the existing methods.展开更多
We present a scheme to realize the basic two-qubit logic gates such as the quantum phase gate and SWAP gate using a detuned microwave cavity interacting with three-level superconducting-quantum-interference-device （S...We present a scheme to realize the basic two-qubit logic gates such as the quantum phase gate and SWAP gate using a detuned microwave cavity interacting with three-level superconducting-quantum-interference-device （SQUID） qubit（s）, by placing SQUID（s） in a two-mode microwave cavity and using adiabatic passage methods. In this scheme, the two logical states of the qubit are represented by the two lowest levels of the SQUID, and the cavity fields are treated as quantized. Compared with the previous method, the complex procedures of adjusting tile level spacing of the SQUID and applying the resonant microwave pulse to the SQUID to create transformation are not required. Based on superconducting device with relatively long decoherence time and simplified operation procedure, the gates operate at a high speed, which is important in view of decoherence.展开更多
A scheme, based on the two two-level atoms resonantly driven by the classical field separately trapped in two cavities coupled by an optical fibre, for the implementation of remote two-qubit gates is investigated. It ...A scheme, based on the two two-level atoms resonantly driven by the classical field separately trapped in two cavities coupled by an optical fibre, for the implementation of remote two-qubit gates is investigated. It is found that the quantum controlled-phase and swap gates can be achieved with the assistance of the classical field when there are detunings of the coupling quantum fields. Moreover, the influence of the dissipation of the cavities and the optical fibre is analysed while the spontaneous emission of the atoms can be effectively suppressed by introducing A-type atoms.展开更多
In the system with two two-level ions confined in a linear trap, this paper presents a simple scheme to realize the quantum phase gate （QPG） and the swap gate beyond the Lamb Dicke （LD） limit. These two-qubit quan...In the system with two two-level ions confined in a linear trap, this paper presents a simple scheme to realize the quantum phase gate （QPG） and the swap gate beyond the Lamb Dicke （LD） limit. These two-qubit quantum logic gates only involve the internal states of two trapped ions. The scheme does not use the vibrational mode as the data bus and only requires a single resonant interaction of the ions with the lasers. Neither the LD approximation nor the auxiliary atomic level is needed in the proposed scheme. Thus the scheme is simple and the interaction time is very short, which is important in view of decoherence. The experimental feasibility for achieving this scheme is also discussed.展开更多
We propose a scheme for the realization of unconventional geometric two-qubit phase gates with two identical two-level ions, In the present scheme, the two ions are simultaneously illuminated by a standing-wave laser ...We propose a scheme for the realization of unconventional geometric two-qubit phase gates with two identical two-level ions, In the present scheme, the two ions are simultaneously illuminated by a standing-wave laser pulse with its pulse frequency being tuned to the ionic transition. The gate operation time can be much shorter, making the system robust against decoherence. In addition, we choose the appropriate experimental parameters to construct the geometric phase gate in one step, and thus avoid implementing the pure geometric single qubit operation.展开更多
A power MOSFET with integrated split gate and dummy gate(SD-MOS) is proposed and demonstrated by the TCAD SENTAURUS.The split gate is surrounded by the source and shielded by the dummy gate.Consequently,the coupling a...A power MOSFET with integrated split gate and dummy gate(SD-MOS) is proposed and demonstrated by the TCAD SENTAURUS.The split gate is surrounded by the source and shielded by the dummy gate.Consequently,the coupling area between the split gate and the drain electrode is reduced,thus the gate-to-drain charge(Q_(GD)),reverse transfer capacitance(C_(RSS)) and turn-off loss(E_(off)) are significantly decreased.Moreover,the MOS-channel diode is controlled by the dummy gate with ultra-thin gate oxide t_(ox),which can be turned on before the parasitic P-base/N-drift diode at the reverse conduction,then the majority carriers are injected to the N-drift to attenuate the minority injection.Therefore,the reverse recovery charge(Q_(RR)),time(T_(RR)) and peak current(I_(RRM)) are effectively reduced at the reverse freewheeling state.Additionally,the specific on-resistance(R_(on,sp)) and breakdown voltage(BV) are also studied to evaluate the static properties of the proposed SD-MOS.The simulation results show that the Q_(GD) of 6 nC/cm^(2),the C_(RSS) of 1.1 pF/cm^(2) at the V_(DS) of 150 V,the QRR of 1.2 μC/cm^(2) and the R_(on,sp) of 8.4 mΩ·cm^(2) are obtained,thus the figures of merit(FOM) including Q_(GD) ×R_(on,sp) of50 nC·mΩ,E_(off) × R_(on,sp) of 0.59 mJ·mΩ and the Q_(RR) × R_(on,sp) of 10.1 μC·mΩ are achieved for the proposed SD-MOS.展开更多
基金Project supported by the National Natural Science Foundation (Grant Nos 10574022 and 10575022)the Funds of the Natural Science of Fujian Province, China (Grant No Z0512006)
文摘We propose a scheme for the implementation of remote controlled-NOT gates and entanglement swapping via geometric phase gates in ion-trap systems. The proposed scheme uses the two ground states of the A-type ions as memory instead of the vibrational mode. And the system is robust against the spontaneous radiation and the dephasing.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11890704,12004042,and 11674376)the Natural Science Foundation of Beijing,China(Grant No.Z190012)+1 种基金the National Key Research and Development Program of China(Grant No.2016YFA0301800)the Key-Area Research and Development Program of Guang-Dong Province,China(Grant No.2018B030326001)。
文摘High fidelity two-qubit gates are fundamental for scaling up the superconducting qubit number.We use two qubits coupled via a frequency-tunable coupler which can adjust the coupling strength,and demonstrate the CZ gate using two different schemes,adiabatic and diabatic methods.The Clifford based randomized benchmarking(RB) method is used to assess and optimize the CZ gate fidelity.The fidelities of adiabatic and diabatic CZ gates are 99.53(8)% and 98.72(2)%,respectively.We also analyze the errors induced by the decoherence.Comparing to 30 ns duration time of adiabatic CZ gate,the duration time of diabatic CZ gate is 19 ns,revealing lower incoherence error rate r’_(incoherent),int=0.0197(5) compared to r_(incoherent,int)=0.0223(3).
基金Project supported by the National Natural Science Foundation of China(Grant No.61475120)the Innovative Projects in Guangdong Colleges and Universities,China(Grant Nos.2014KTSCX134 and 2015KTSCX146)
文摘Using the dynamical properties of the polarization bistability that depends on the detuning of the injected light,we propose a novel approach to implement reliable all-optical stochastic logic gates in the cascaded vertical cavity surface emitting lasers（VCSELs） with optical-injection.Here,two logic inputs are encoded in the detuning of the injected light from a tunable CW laser.The logic outputs are decoded from the two orthogonal polarization lights emitted from the optically injected VCSELs.For the same logic inputs,under electro-optic modulation,we perform various digital signal processing（NOT,AND,NAND,XOR,XNOR,OR,NOR） in the all-optical domain by controlling the logic operation of the applied electric field.Also we explore their delay storages by using the mechanism of the generalized chaotic synchronization.To quantify the reliabilities of these logic gates,we further demonstrate their success probabilities.
基金Supported by the National Natural Science Foundation of China under Grant No 10225421, and the Fund from Fuzhou University.
文摘We propose a scheme for implementing nongeometric phase gates fbr two trapped ions via adiabatic passage of dark states. During the operation, the vibrational mode is only virtually excited, thus the scheme is insensitive to heating. Furthermore, the spontaneous emission is suppressed since the ions are always in the electronic ground states. The scheme is robust against small fluctuations of parameters, and the conditional phase is tunable.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 61068001 and 11264042)the Program for Chun Miao Excellent Talents of Department of Education of Jilin Province,China (Grant No. 201316)
文摘Schemes for two-qubit and three-qubit controlled gates based on cross-Kerr nonlinearity are proposed in this paper.The probability of the success of these gates can be increased by quantum nondemolition detectors,which are used to judge which paths the signal photons pass through.These schemes are almost deterministic and require no ancilla photon.The advantages of these gates over the existing ones include less resource consumption and a higher probability of success,which make our schemes more feasible with current technology.
基金supported by the National Natural Science Foundation of China(Nos.31470960 and 21422508)
文摘Electrochemical logical operations utilizing biological molecules(protein or DNA), which can be used in disease diagnostics and bio-computing, have attracted great research interest. However, the existing logic operations, being realized on macroscopic electrode, are not suitable for implantable logic devices. Here, we demonstrate DNA-based logic gates with electrochemical signal as output combined with gold flower microelectrodes. The designed logic gates are of fast response, enzyme-free, and micrometer scale. They perform well in either pure solution or complex matrices, such as fetal bovine serum,suggesting great potential for in vivo applications.
基金Supported by the National Basic Research Program of China under Grant No 2011CBA00605the National Natural Science Foundation of China under Grant No 61404165
文摘Strained-Si0.73Ge0.27 channels are successfully integrated with high-R/metal gates in p-type metai-oxide- semi- conductor field effect transistors （pMOSFETs） using the replacement post-gate process. A silicon cap and oxide inter layers are inserted between Si0.73Ge0.27 and high-κ dielectric to improve the interface. The fab- ricated Si0.73Ge0.27 pMOSFETs with gate length of 3Onto exhibit good performance with high drive current （~428μA/μm at VDD = 1 V） and suppressed short-channel effects （DIBL^77mV/V and SS^90mV/decade）. It is found that the enhancement of effective hole mobility is up to 200% in long-gate-length Si0.73Ge0.27-channel pMOSFETs compared with the corresponding silicon transistors. The improvement of device performance is reduced due to strain relaxation as the gate length decreases, while 26% increase of the drive current is still obtained for 30-nm-gate-length Si0.73Ge0.27 devices.
基金support from the National Natural Science Foundation of China (Grant Nos.51771127,52171188,and 52111530143)the Central Government Funds of Guiding Local Scientific and Technological Development for Sichuan Province,China (Grant No.2021ZYD0025)+7 种基金supported by JSPS KAKENHI (Grant No.JP22F22061)support from Guangdong Basic and Applied Basic Research Foundation (Grant No.2021B1515120047)Guangdong Special Support Project (Grant No.2019BT02X030)Shenzhen Fundamental Research Fund (Grant No.JCYJ20210324120213037)Shenzhen Peacock Group Plan (No.KQTD20180413181702403)Pearl River Recruitment Program of Talents (Grant No.2017GC010293)the National Natural Science Foundation of China (Grant Nos.11974298 and 61961136006)support from the Grantsin-Aid Scientific Research from JSPS KAKENHI (Grant Nos.JP20F20363,JP21H01364,and JP21K18872)。
文摘Skyrmions in synthetic antiferromagnetic(SAF) systems have attracted much attention in recent years due to their superior stability, high-speed mobility, and completely compensated skyrmion Hall effect. They are promising building blocks for the next generation of magnetic storage and computing devices with ultra-low energy and ultra-high density.Here, we theoretically investigate the motion of a skyrmion in an SAF bilayer racetrack and find the velocity of a skyrmion can be controlled jointly by the edge effect and the driving force induced by the spin current. Furthermore, we propose a logic gate that can realize different logic functions of logic AND, OR, NOT, NAND, NOR, and XOR gates. Several effects including the spin–orbit torque, the skyrmion Hall effect, skyrmion–skyrmion repulsion, and skyrmion–edge interaction are considered in this design. Our work may provide a way to utilize the SAF skyrmion as a versatile information carrier for future energy-efficient logic gates.
基金Project supported by“Efficient and Energy-Saving GaN on Si Power Devices”Research Fund(Grant No.KQCX20140522151322946)the Research Fund of the Third Generation Semiconductor Key Laboratory of Shenzhen,China(Grant No.ZDSYS20140509142721434)+1 种基金the“Key Technology Research of GaN on Si Power Devices”Research Fund(Grant No.JSGG20140729145956266)the“Research of Low Cost Fabrication of GaN Power Devices and System Integration”Research Fund(Grant No.JCYJ201602261926390)
文摘A novel enhancement-mode AlGaN/GaN high electron mobility transistor（HEMT） is proposed and studied.Specifically,several split floating gates（FGs） with negative charges are inserted to the conventional MIS structure.The simulation results revealed that the V_（th） decreases with the increase of polarization sheet charge density and the tunnel dielectric（between FGs and AlGaN） thickness,while it increases with the increase of FGs sheet charge density and blocking dielectric（between FGs and control gate） thickness.In the case of the same gate length,the V_（th） will left shift with decreasing FG length.More interestingly,the split FGs could significantly reduce the device failure probability in comparison with the single large area FG structure.
基金supported by the National Natural Science Foundation of China (Grant No 10674025)the Doctoral Foundation of the Ministry of Education of China (Grant No 20070386002)
文摘We propose a scheme for implementing conditional quantum phase gates for two four-state atoms trapped in a cavity. The two ground states of the atoms are coupled through two Raman processes induced by the cavity mode and two classical fields. Under certain conditions nonresonant Raman processes lead to two-atom coupling and can be used to produce conditional phase gates. The scheme is insensitive to cavity decay, thermal photons, and atomic spontaneous emission. The scheme does not require individual addressing of the atoms.
基金Project supported by the National Natural Science Foundation of China (Grant No 60667001)the Science Foundation of Yanbian University in China (Grant No 2007-31)
文摘Based on squeezed operators this paper has implemented an ideal unconventional geometric quantum gate （GQG） in ion trap-optical cavity system by radiating the trapped ions with the cavity field of frequency ωc and an external laser field of frequency ωL. It can ensure that the gate time is shorter than the coherence time for qubits and the decay time of the optical cavity by appropriately tuning the ionic transition frequency ω0, the frequencies of the cavity mode ωc and the vibrational mode v. It has also realized the unconventional GQG under the influence of the cavity decay based on the squeezed-like operators and found that the present scheme works well for the smaller cavity decay by investigating the corresponding fidelity and success probability.
基金the Natioanl Natural Science Foundation of China (Grant No. 11864011)in part by Youth Project of Scientific and technological Research Program of Chongqing Education Commission (Grant No. KJQN202101204)。
文摘Logic gates are fundamental structural components in all modern digital electronic devices. Here, nonequilibrium Green's functions are incorporated with the density functional theory to verify the thermal spin transport features of the single-molecule spintronic devices constructed by a single molecule in series or parallel connected with graphene nanoribbons electrodes. Our calculations demonstrate that the electric field can manipulate the spin-polarized current. Then, a complete set of thermal spin molecular logic gates are proposed, including AND, OR, and NOT gates. The mentioned logic gates enable different designs of complex thermal spin molecular logic functions and facilitate the electric field control of thermal spin molecular devices.
基金supported by the National Natural Science Foundation of China under Grant No.61274036,No.61371025,No.61204027,and No.61474036
文摘The shrinking silicon feature size causes the continuous increment of the aging effect due to the negative bias temperature instability （NBTI）, which becomes a potential stopper for IC development. As the basis of circuit-level aging protection, an efficient aging critical-gate identification method is crucially required to select a set of gates for protection to guarantee the normal lifetime of the circuits. The existing critical-gate identification methods always depend on a critical path set which contains so many paths that its generation procedure requires undesirable CPU runtime; furthermore, these methods can achieve a better solution with taking account of the topological connection. This paper proposes a time-efficient critical gates identification method with topological connection analysis, which chooses a small set of critical gates. Experiments over many circuits of ITC99 and ISCAS benchmark demonstrate that, to guarantee the normal lifetime （e.g., 10 years） of each circuit, our method achieves a 3.97x speedup and saves as much as 27.21% area overhead compared with the existing methods.
文摘We present a scheme to realize the basic two-qubit logic gates such as the quantum phase gate and SWAP gate using a detuned microwave cavity interacting with three-level superconducting-quantum-interference-device （SQUID） qubit（s）, by placing SQUID（s） in a two-mode microwave cavity and using adiabatic passage methods. In this scheme, the two logical states of the qubit are represented by the two lowest levels of the SQUID, and the cavity fields are treated as quantized. Compared with the previous method, the complex procedures of adjusting tile level spacing of the SQUID and applying the resonant microwave pulse to the SQUID to create transformation are not required. Based on superconducting device with relatively long decoherence time and simplified operation procedure, the gates operate at a high speed, which is important in view of decoherence.
基金Project supported by the National Natural Science Foundation of China (Grant No. 10374025)the Natural Science Foundation of Hunan Province of China (Grant Nos. 07JJ3013 and 07JJ5003)the Education Ministry of Hunan Province of China (Grant No. 06A038)
文摘A scheme, based on the two two-level atoms resonantly driven by the classical field separately trapped in two cavities coupled by an optical fibre, for the implementation of remote two-qubit gates is investigated. It is found that the quantum controlled-phase and swap gates can be achieved with the assistance of the classical field when there are detunings of the coupling quantum fields. Moreover, the influence of the dissipation of the cavities and the optical fibre is analysed while the spontaneous emission of the atoms can be effectively suppressed by introducing A-type atoms.
基金Project supported by the Important Program of Hunan Provincial Education Department (Grant No 06A038)Department of Education of Hunan Province (Grant No 06C080)+1 种基金Natural Science Foundation of Hunan Province, China (Grant No 07JJ3013)Postdoctoral Fund of China (Grant No 20070420825)
文摘In the system with two two-level ions confined in a linear trap, this paper presents a simple scheme to realize the quantum phase gate （QPG） and the swap gate beyond the Lamb Dicke （LD） limit. These two-qubit quantum logic gates only involve the internal states of two trapped ions. The scheme does not use the vibrational mode as the data bus and only requires a single resonant interaction of the ions with the lasers. Neither the LD approximation nor the auxiliary atomic level is needed in the proposed scheme. Thus the scheme is simple and the interaction time is very short, which is important in view of decoherence. The experimental feasibility for achieving this scheme is also discussed.
基金Project supported by the National Natural Science Foundation of China （Grant No 10574022）, and the Funds of the Natural Science of Fujian Province, China （Grant Nos Z0512006 and A0210014）.
文摘We propose a scheme for the realization of unconventional geometric two-qubit phase gates with two identical two-level ions, In the present scheme, the two ions are simultaneously illuminated by a standing-wave laser pulse with its pulse frequency being tuned to the ionic transition. The gate operation time can be much shorter, making the system robust against decoherence. In addition, we choose the appropriate experimental parameters to construct the geometric phase gate in one step, and thus avoid implementing the pure geometric single qubit operation.
基金Project supported by the National Natural Science Foundation of China (Grants No. 61604027 and 61704016)the Chongqing Natural Science Foundation, China (Grant No. cstc2020jcyj-msxmX0550)。
文摘A power MOSFET with integrated split gate and dummy gate(SD-MOS) is proposed and demonstrated by the TCAD SENTAURUS.The split gate is surrounded by the source and shielded by the dummy gate.Consequently,the coupling area between the split gate and the drain electrode is reduced,thus the gate-to-drain charge(Q_(GD)),reverse transfer capacitance(C_(RSS)) and turn-off loss(E_(off)) are significantly decreased.Moreover,the MOS-channel diode is controlled by the dummy gate with ultra-thin gate oxide t_(ox),which can be turned on before the parasitic P-base/N-drift diode at the reverse conduction,then the majority carriers are injected to the N-drift to attenuate the minority injection.Therefore,the reverse recovery charge(Q_(RR)),time(T_(RR)) and peak current(I_(RRM)) are effectively reduced at the reverse freewheeling state.Additionally,the specific on-resistance(R_(on,sp)) and breakdown voltage(BV) are also studied to evaluate the static properties of the proposed SD-MOS.The simulation results show that the Q_(GD) of 6 nC/cm^(2),the C_(RSS) of 1.1 pF/cm^(2) at the V_(DS) of 150 V,the QRR of 1.2 μC/cm^(2) and the R_(on,sp) of 8.4 mΩ·cm^(2) are obtained,thus the figures of merit(FOM) including Q_(GD) ×R_(on,sp) of50 nC·mΩ,E_(off) × R_(on,sp) of 0.59 mJ·mΩ and the Q_(RR) × R_(on,sp) of 10.1 μC·mΩ are achieved for the proposed SD-MOS.
