Effect of flip chip bonding parameters on microstructure at the interconnect interface and shear properties of 64.8Sn35.2Pb microbumps were investigated in this work.Results show that the main intermetallic compound(I...Effect of flip chip bonding parameters on microstructure at the interconnect interface and shear properties of 64.8Sn35.2Pb microbumps were investigated in this work.Results show that the main intermetallic compound(IMC)at the interconnect interface is(Ni,Cu)_(3)Sn_(4)phase,and meanwhile a small amount of(Cu,Ni)_(6)Sn_(5)phase with a size of 50−100 nm is formed around(Ni,Cu)_(3)Sn_(4)phase.The orientation relationship of[-1-56](Ni,Cu)_(3)Sn_(4)//[152](Cu,Ni)_(6)Sn_(5)and(601)(Ni,Cu)_(3)Sn_(4)//(-201)(Cu,Ni)_(6)Sn_(5)is found between these two phases,and the atomic matching at the interface of the two phases is low.The highest shear force of 77.3 gf is achieved in the 64.8Sn35.2Pb microbump at the peak temperature of 250℃and parameter V1 because dense IMCs and no cracks form at the interconnect interface.Two typical fracture modes of microbumps are determined as solder fracture and mixed fracture.The high thermal stress presenting in the thick IMCs layer induces crack initiation,and cracks propagate along theα/βphase boundaries in the Sn-Pb solder under shear force,leading to a mixed fracture mode in the microbumps.展开更多
将Flipped Class Model引入到高校网球课教学,有助于激发学生对高校网球项目课学习的积极性,增强学生网球项目课学习的自主性,加强师生间的交流。运用SWOT态势分析法,将Flipped Class Model引入到高校网球教学,将会促进教师教学能力提...将Flipped Class Model引入到高校网球课教学,有助于激发学生对高校网球项目课学习的积极性,增强学生网球项目课学习的自主性,加强师生间的交流。运用SWOT态势分析法,将Flipped Class Model引入到高校网球教学,将会促进教师教学能力提高、教学过程中教师和学生角色转换、学生学习习惯改变等。展开更多
功耗攻击是一种通过统计电路的功耗信息得到敏感数据信息的攻击手段。作为电路的重要组成单元,触发器的抗功耗攻击水平与电路的安全性能息息相关,为此提出一种抗功耗攻击型触发器。通过引入“预充电-求值-放电”三阶段逻辑,提出了改进...功耗攻击是一种通过统计电路的功耗信息得到敏感数据信息的攻击手段。作为电路的重要组成单元,触发器的抗功耗攻击水平与电路的安全性能息息相关,为此提出一种抗功耗攻击型触发器。通过引入“预充电-求值-放电”三阶段逻辑,提出了改进型的三阶段动态电流模式逻辑D触发器(improved three-phase dynamic current mode logic-based D flip-flop,TDyCML_FF),避免了因负载电容不均衡引起的电路功耗不恒定等安全问题。同时对三阶段逻辑结构进行了改进,由电路内部节点信号生成放电信号,从而避免通过减缓时钟频率或消除放电信号对其进行攻击,提高了电路的抗功耗攻击性能。通过Hspice仿真实验,并引入归一化能量偏差(NED)和归一化标准偏差(NSD)2个量化参数,将TDyCML_FF感应放大逻辑触发器(SABL_FF)、三阶段双轨预充电逻辑触发器(TDPL_FF)等抗功耗攻击型触发器进行了对比,证明TDyCML_FF具有较高的抗功耗攻击性能。展开更多
基金Project(U2341254)supported by Ye Qisun Science Foundation of National Natural Science Foundation of ChinaProject(52475406)supported by the National Nature Science Foundation of ChinaProject(2024CY2-GJHX-32)supported by the Key R&D Program of Shaanxi Province,China。
文摘Effect of flip chip bonding parameters on microstructure at the interconnect interface and shear properties of 64.8Sn35.2Pb microbumps were investigated in this work.Results show that the main intermetallic compound(IMC)at the interconnect interface is(Ni,Cu)_(3)Sn_(4)phase,and meanwhile a small amount of(Cu,Ni)_(6)Sn_(5)phase with a size of 50−100 nm is formed around(Ni,Cu)_(3)Sn_(4)phase.The orientation relationship of[-1-56](Ni,Cu)_(3)Sn_(4)//[152](Cu,Ni)_(6)Sn_(5)and(601)(Ni,Cu)_(3)Sn_(4)//(-201)(Cu,Ni)_(6)Sn_(5)is found between these two phases,and the atomic matching at the interface of the two phases is low.The highest shear force of 77.3 gf is achieved in the 64.8Sn35.2Pb microbump at the peak temperature of 250℃and parameter V1 because dense IMCs and no cracks form at the interconnect interface.Two typical fracture modes of microbumps are determined as solder fracture and mixed fracture.The high thermal stress presenting in the thick IMCs layer induces crack initiation,and cracks propagate along theα/βphase boundaries in the Sn-Pb solder under shear force,leading to a mixed fracture mode in the microbumps.
文摘将Flipped Class Model引入到高校网球课教学,有助于激发学生对高校网球项目课学习的积极性,增强学生网球项目课学习的自主性,加强师生间的交流。运用SWOT态势分析法,将Flipped Class Model引入到高校网球教学,将会促进教师教学能力提高、教学过程中教师和学生角色转换、学生学习习惯改变等。
文摘功耗攻击是一种通过统计电路的功耗信息得到敏感数据信息的攻击手段。作为电路的重要组成单元,触发器的抗功耗攻击水平与电路的安全性能息息相关,为此提出一种抗功耗攻击型触发器。通过引入“预充电-求值-放电”三阶段逻辑,提出了改进型的三阶段动态电流模式逻辑D触发器(improved three-phase dynamic current mode logic-based D flip-flop,TDyCML_FF),避免了因负载电容不均衡引起的电路功耗不恒定等安全问题。同时对三阶段逻辑结构进行了改进,由电路内部节点信号生成放电信号,从而避免通过减缓时钟频率或消除放电信号对其进行攻击,提高了电路的抗功耗攻击性能。通过Hspice仿真实验,并引入归一化能量偏差(NED)和归一化标准偏差(NSD)2个量化参数,将TDyCML_FF感应放大逻辑触发器(SABL_FF)、三阶段双轨预充电逻辑触发器(TDPL_FF)等抗功耗攻击型触发器进行了对比,证明TDyCML_FF具有较高的抗功耗攻击性能。
