A grazing incidence flat-field spectrograph using a concave grating was constructed to measure extreme ultraviolet （EUV） emission from a CO 2 laser-produced tin plasma throughout the wavelength region of 5 nm to 20 ...A grazing incidence flat-field spectrograph using a concave grating was constructed to measure extreme ultraviolet （EUV） emission from a CO 2 laser-produced tin plasma throughout the wavelength region of 5 nm to 20 nm for lithography. Spectral efficiency of the EUV emission around 13.5 nm from plate, cavity, and thin foil tin targets was studied. By translating the focusing lens along the laser axis, the dependence of EUV spectra on the amount of defocus was investigated. The results showed that the spectral efficiency was higher for the cavity target in comparison to the plate or foil target, while it decreased with an increase in the defocus distance. The source＇s spectra and the EUV emission intensity normalized to the incident pulse energy at 45 from the target normal were characterized for the in-band （2% of bandwidth） region as a function of laser energy spanning from 46 mJ to 600 mJ for the pure tin plate target. The energy normalized EUV emission was found to increase with the increasing incident pulse energy. It reached the optimum value for the laser energy of around 343 mJ, after which it dropped rapidly.展开更多
The soft X-ray interference lithography(XIL) branch beamline at Shanghai Synchrotron Radiation Facility(SSRF) is briefly introduced in this article. It is designed for obtaining 1D(line/space) and 2D(dot/hole)periodic...The soft X-ray interference lithography(XIL) branch beamline at Shanghai Synchrotron Radiation Facility(SSRF) is briefly introduced in this article. It is designed for obtaining 1D(line/space) and 2D(dot/hole)periodic nanostructures by using two or more coherent extreme ultraviolet(EUV) beams from an undulator source. A transmission-diffraction-grating type of interferometer is used at the end station. Initial results reveal high performance of the beamline, with 50 nm half-pitch 1D and 2D patterns from a single exposure area of400 μm× 400 μm. XIL is used in a growing number of areas, such as EUV resist test, surface enhanced Raman scattering(SERS) and color filter plasmonic devices. By using highly coherent EUV beam, broadband coherent diffractive imaging can be performed on the XIL beamline. Well reconstructed pinhole of φ20 μm has been realized.展开更多
Evaluating the comprehensive characteristics of extreme ultraviolet(EUV)photoresists is crucial for their application in EUV lithography,a key process in modern technology.This paper highlights the capabilities of the...Evaluating the comprehensive characteristics of extreme ultraviolet(EUV)photoresists is crucial for their application in EUV lithography,a key process in modern technology.This paper highlights the capabilities of the Shanghai Synchrotron Radiation Facility(SSRF)08U1B beamline in advancing this field.Specifically,it demonstrates how this beamline can create fringe patterns with a 15-nm half-pitch on a resist using synchrotron-based EUV lithography.This achievement is vital for evaluating EUV photoresists at the advanced 5-nm node.We provide a detailed introduction to the methods and experimental setup used at the SSRF 08U1B beamline to assess an EUV photoresist.A significant part of this research involved the fabrication of high-resolution hydrogen silsesquioxane mask gratings.These gratings,with an aspect ratio of approximately 3,were created using electron beam lithography on an innovative mask framework.This framework was crucial in eliminating the impact of zeroth-order light on interference patterns.The proposed framework propose offers a new approach to mask fabrication,particularly beneficial for achromatic Talbot lithography and multicoherent-beam interference applications.展开更多
The physical design for a novel low-energy compact-storage-ring-based extreme ultraviolet(EUV)light source was systemically studied.The design process considers the linear and nonlinear beam optics,including transvers...The physical design for a novel low-energy compact-storage-ring-based extreme ultraviolet(EUV)light source was systemically studied.The design process considers the linear and nonlinear beam optics,including transverse matching and the optimization of the dynamic aperture,momentum aperture,and beam lifetime.With a total circumference of 36.7 m and a beam energy of 400 MeV,the storage ring can operate with an average beam current of up to 1 A.With the undulator as the radiator,this facility has the potential to emit EUV radia-tion at 13.5 nm with an average power exceeding 10 W within the bandwidth.In addition,the collective instabili-ties of the lattice at high beam current were analyzed;it was found that the typical instabilities which may occur in an electron storage ring can be reasonably controlled in our design.With the advantages of variable beam energy and current,this design exhibits great promise as a new can-didate for various EUV lithographical applications requir-ing tunable radiation power.展开更多
基金supported by the Scientific Research Foundation of the Education Department of Hubei Province (No.Q20131512)National Natural Science Foundation of China (No.61078024)
文摘A grazing incidence flat-field spectrograph using a concave grating was constructed to measure extreme ultraviolet （EUV） emission from a CO 2 laser-produced tin plasma throughout the wavelength region of 5 nm to 20 nm for lithography. Spectral efficiency of the EUV emission around 13.5 nm from plate, cavity, and thin foil tin targets was studied. By translating the focusing lens along the laser axis, the dependence of EUV spectra on the amount of defocus was investigated. The results showed that the spectral efficiency was higher for the cavity target in comparison to the plate or foil target, while it decreased with an increase in the defocus distance. The source＇s spectra and the EUV emission intensity normalized to the incident pulse energy at 45 from the target normal were characterized for the in-band （2% of bandwidth） region as a function of laser energy spanning from 46 mJ to 600 mJ for the pure tin plate target. The energy normalized EUV emission was found to increase with the increasing incident pulse energy. It reached the optimum value for the laser energy of around 343 mJ, after which it dropped rapidly.
基金Supported by the National Key Basic Research Program of China(No.2012CB825700)the Open Research Project of Large Scientific Facility from Chinese Academy of Sciences:Study on Self-Assembly Technology and Nanometer Array with Ultra-high Density
文摘The soft X-ray interference lithography(XIL) branch beamline at Shanghai Synchrotron Radiation Facility(SSRF) is briefly introduced in this article. It is designed for obtaining 1D(line/space) and 2D(dot/hole)periodic nanostructures by using two or more coherent extreme ultraviolet(EUV) beams from an undulator source. A transmission-diffraction-grating type of interferometer is used at the end station. Initial results reveal high performance of the beamline, with 50 nm half-pitch 1D and 2D patterns from a single exposure area of400 μm× 400 μm. XIL is used in a growing number of areas, such as EUV resist test, surface enhanced Raman scattering(SERS) and color filter plasmonic devices. By using highly coherent EUV beam, broadband coherent diffractive imaging can be performed on the XIL beamline. Well reconstructed pinhole of φ20 μm has been realized.
基金supported by the National Key Research and Development Program of China(Nos.2021YFA1601003,2017YFA0206002,2017YFA0403400)the National Natural Science Foundation of China(No.11775291)。
文摘Evaluating the comprehensive characteristics of extreme ultraviolet(EUV)photoresists is crucial for their application in EUV lithography,a key process in modern technology.This paper highlights the capabilities of the Shanghai Synchrotron Radiation Facility(SSRF)08U1B beamline in advancing this field.Specifically,it demonstrates how this beamline can create fringe patterns with a 15-nm half-pitch on a resist using synchrotron-based EUV lithography.This achievement is vital for evaluating EUV photoresists at the advanced 5-nm node.We provide a detailed introduction to the methods and experimental setup used at the SSRF 08U1B beamline to assess an EUV photoresist.A significant part of this research involved the fabrication of high-resolution hydrogen silsesquioxane mask gratings.These gratings,with an aspect ratio of approximately 3,were created using electron beam lithography on an innovative mask framework.This framework was crucial in eliminating the impact of zeroth-order light on interference patterns.The proposed framework propose offers a new approach to mask fabrication,particularly beneficial for achromatic Talbot lithography and multicoherent-beam interference applications.
基金supported by the National Key Research and Development Program of China(No.2016YFA0401901)the National Natural Science Foundation of China(No.11675248).
文摘The physical design for a novel low-energy compact-storage-ring-based extreme ultraviolet(EUV)light source was systemically studied.The design process considers the linear and nonlinear beam optics,including transverse matching and the optimization of the dynamic aperture,momentum aperture,and beam lifetime.With a total circumference of 36.7 m and a beam energy of 400 MeV,the storage ring can operate with an average beam current of up to 1 A.With the undulator as the radiator,this facility has the potential to emit EUV radia-tion at 13.5 nm with an average power exceeding 10 W within the bandwidth.In addition,the collective instabili-ties of the lattice at high beam current were analyzed;it was found that the typical instabilities which may occur in an electron storage ring can be reasonably controlled in our design.With the advantages of variable beam energy and current,this design exhibits great promise as a new can-didate for various EUV lithographical applications requir-ing tunable radiation power.
