A new type of 785 nm semiconductor laser device has been proposed.The thin cladding and mode expansion layer structure incorporated into the epitaxy on the p-side significantly impacts the regulation of grating etchin...A new type of 785 nm semiconductor laser device has been proposed.The thin cladding and mode expansion layer structure incorporated into the epitaxy on the p-side significantly impacts the regulation of grating etching depth.Thinning of the p-side waveguide layer makes the light field bias to the n-side cladding layer.By coordinating the confinement effect of the cladding layer,the light confinement factor on the p-side is regulated.On the other hand,the introduction of a mode expansion layer facilitates the expansion of the mode profile on the p side cladding layer.Both these factors contribute positively to reducing the grating etching depth.Compared to the reported epitaxial structures of symmetric waveguides,the new structure significantly reduces the etching depth of the grating while ensuring adequate reflection intensity and maintaining resonance.Moreover,to improve the output performance of the device,the new epitaxial structure has been optimized.Based on the traditional epitaxial structure,an energy release layer and an electron blocking layer are added to improve the electronic recombination efficiency.This improved structure has an output performance comparable to that of a symmetric waveguide,despite being able to have a smaller gain area.展开更多
Lutetium oxide(Lu_(2)O_(3))is recognized as a potential laser crystal material,and it is noted for its high ther⁃mal conductivity,low phonon energy,and strong crystal field.Nevertheless,its high melting point of 2450...Lutetium oxide(Lu_(2)O_(3))is recognized as a potential laser crystal material,and it is noted for its high ther⁃mal conductivity,low phonon energy,and strong crystal field.Nevertheless,its high melting point of 2450℃induces significant temperature gradients,resulting in a proliferation of defects.The scarcity of comprehensive research on this crystal’s defects hinders the enhancement of crystal quality.In this study,we employed the chemical etching method to examine the etching effects on Lu_(2)O_(3)crystals under various conditions and to identify the optimal conditions for investi⁃gating the dislocation defects of Lu_(2)O_(3)crystals(mass fraction 70%H3PO4,160℃,15-18 min).The morphologies of dislocation etch pits on the(111)-and(110)-oriented Lu_(2)O_(3)wafers were characterized using microscopy,scanning electron microscopy and atomic force microscopy.This research addresses the gap in understanding Lu_(2)O_(3)line defects and offers guidance for optimizing the crystal growth process and improving crystal quality.展开更多
In order to obtain high-quality spherical RDX crystal particles,the RDX crystals were suspended in a mixed solvent of cyclohexanone and cyclohexane,subsequently a solvent etching study was carried out under the action...In order to obtain high-quality spherical RDX crystal particles,the RDX crystals were suspended in a mixed solvent of cyclohexanone and cyclohexane,subsequently a solvent etching study was carried out under the action of vibration/acoustic flow coupled flow field,which generated by resonance acoustic mixing.The effects of solvent ratio,temperature,acceleration and experiment time on morphology as well as particle size of RDX crystals were studied.Not only were the morphology,particle size distribution and crystal form of RDX crystals determined,but also the thermal decomposition performance and mechanical sensitivity of spherical RDX were examined and discussed.Results indicated that under the process of solvent/non-solvent volume ratio at 1:2,temperature of 40℃,acceleration of 40 g and experiment time of 4 h,α-type RDX crystal with sphericity of 0.92 can be obtained.Furthermore,the median particle size(D_(50))of spherical RDX crystals is 215.8 μm with a unimodal particle size distribution(size span 1.34).For one thing,the thermal decomposition peak temperature of spherical RDX is about 2.5℃ higher than that of raw RDX,and apparent activation energy reaches 444.68 kJ/mol.For another thing,impact sensitivity and friction sensitivity of spherical RDX are 18.18% and 33.33% lower than that of raw RDX,respectively.It demonstrates that safety of spherical RDX under thermal,impact and friction stimuli has been improved.展开更多
An inductively coupled plasma (ICP) discharge and its etching behaviors for aluminum alloys were investigated in this report. A radio frequency power supply was used for plasma generation. The unique hardware configur...An inductively coupled plasma (ICP) discharge and its etching behaviors for aluminum alloys were investigated in this report. A radio frequency power supply was used for plasma generation. The unique hardware configuration enabled one to control ion energy separately from plasma density. Plasma properties were measured with a Langmuir probe. Electron temperature, plasma potential and plasma density were found to be comparable with those reported from Electron Cyclotron Resonance (ECR) and other types of reactors[1].A mixture of HBr and chlorine gases were used for this aluminum etch study. Experimental matrices were designed with Response Surface Methodology (RSM) to analyze the process trends versus etch parameters, such as source power, bias power and gas composition. An etch rate of 8500A to 9000A per minute was obtained at 5 to 15 mTorr pressure ranges. Anisotropic profiles with high photoresist selectivity (5 to 1) and silicon dioxide selectivity greater than 10 were achieved with HBr addition into chlorine plasma.Bromine-containing chemistry for an aluminum etch in a low pressure ICP discharge showed great potential for use in ULSI fabrication. In addition, the hardware used was very simple and the chamber size was much smaller than other high density plasma sources.展开更多
Gas spark switch is one of the key parts in pulsed power technology.Electrode erosion has great influence on the switch performance and lifetime.In this paper,a field distortion gas switch is selected for the experime...Gas spark switch is one of the key parts in pulsed power technology.Electrode erosion has great influence on the switch performance and lifetime.In this paper,a field distortion gas switch is selected for the experiment and a great deal of discharging experiments have been conducted in different test conditions.The forming process of etch pit as well as its influencing factors is discussed briefly and surface roughness coefficient(SRC) of the electrode is put forward to evaluate the state of electrode erosion.Experimental results show that current peak plays an important role in electrode erosion when waveforms of discharge current are the same,and electric charge and oscillation frequency of discharge current also have great effect on the electrode erosion when waveforms of discharge current are different.With the increase of discharge times,SRC decreases slowly at first and then decreases quickly after three thousand of discharge times.展开更多
Mechanical properties and corrosion resistance of Si3N4 films are studied by using different experiment parameters, such as plasma enhanced chemical vapor deposition(PECVD) RF power, ratio of reaction gas, reaction pr...Mechanical properties and corrosion resistance of Si3N4 films are studied by using different experiment parameters, such as plasma enhanced chemical vapor deposition(PECVD) RF power, ratio of reaction gas, reaction pressure and working temperature. The etching process of Si3N4 is studied by inductively coupled plasma (ICP) with a gas mixture of SF6 and O2. The influence of the technique parameters, such as ICP power, DC bias, gas composition, total flow rate, on the etching selectivity of Si3N4/EPG533 which is used as a mask layer and the etching rate of Si3N4 is studied, in order to get a better etching selectivity of Si3N4/EPG533 with a faster etching rate of Si3N4. The optimized process parameters of etching Si3N4 by ICP are obtained after a series of experiments and analysis. Under the conditions of total ICP power of 250 W, DC bias of 50W, total flow rate of 40 sccm and O2 composition of 30%, the etching selectivity of 2.05 can be reached when Si3N4 etching rate is 336 nm/min.展开更多
Metal(aluminum and boron)based energetic materials have been wildly applied in various fields including aerospace,explosives and micro-devices due to their high energy density.Unfortunately,the low combustion efficien...Metal(aluminum and boron)based energetic materials have been wildly applied in various fields including aerospace,explosives and micro-devices due to their high energy density.Unfortunately,the low combustion efficiency and reactivity of metal fuels,especially boron(B),severely limit their practical applications.Herein,multi-component 3D microspheres of HMX/B/Al/PTFE(HBA)have been designed and successfully prepared by emulsion and solvent evaporation method to achieve superior energy and combustion reactivity.The reactivity and energy output of HBA are systematically measured by ignitionburning test,constant-volume explosion vessel system and bomb calorimetry.Due to the increased interfacial contact and reaction area,HBA shows higher flame propagation rate,faster pressurization rate and larger combustion heat of 29.95 cm/s,1077 kPa/s,and 6164.43 J/g,which is 1.5 times,3.5 times,and 1.03 times of the physical mixed counterpart(HBA-P).Meanwhile,HBA also shows enhanced energy output and reactivity than 3D microspheres of HMX/B/PTFE(HB)resulting from the high reactivity of Al.The reaction mechanism of 3D microspheres is comprehensively investigated through combustion emission spectral and thermal analysis(TG-DSC-MS).The superior reactivity and energy of HBA originate from the surface etching of fluorine to the inert shell(Al_(2)O_(3) and B_(2)O_(3))and the initiation effect of Al to B.This work offers a promising approach to design and prepare high-performance energetic materials for the practical applications.展开更多
Diatomite, a type of biogenic mineral, is sourced from deposition and accumulation of diatom shell. Diatom shells are mainly composed of amorphous hydrated silica, which is categorized as non-crystalline opal-A accord...Diatomite, a type of biogenic mineral, is sourced from deposition and accumulation of diatom shell. Diatom shells are mainly composed of amorphous hydrated silica, which is categorized as non-crystalline opal-A according to the mineralogical classification. Diatomite has a characteristic macro/mesoporous structure and unique physical and chemical capabilities, such as high thermal stability, strong acid resistance, and high adsorption capacity, and thus is widely used as the filter aid, catalytic support, and adsorbent. However, the low surface area of diatomite shows disadvantage in adsorption. Moreover, the hydrophilic surface which contains abundant silanols is usually covered by adsorbed water, resulting in that the adsorption sites of diatomite were occupied and the adsorption capacity of hydrophobic guests decreased. In previous reports, zeolitization was employed to increase the specific surface area (SBET) and porosity of diatomite. However, the hydrophilic property of diatomite was not changed after zeolitization. It is due to that the zeolite formed on the surface area of diatomite contained some aluminum in its structure, which was highly hydrophilic. Therefore, it is significantly interesting to prepare the zeolitized diatomite with both large SBET and high hydrophobicity.展开更多
文摘A new type of 785 nm semiconductor laser device has been proposed.The thin cladding and mode expansion layer structure incorporated into the epitaxy on the p-side significantly impacts the regulation of grating etching depth.Thinning of the p-side waveguide layer makes the light field bias to the n-side cladding layer.By coordinating the confinement effect of the cladding layer,the light confinement factor on the p-side is regulated.On the other hand,the introduction of a mode expansion layer facilitates the expansion of the mode profile on the p side cladding layer.Both these factors contribute positively to reducing the grating etching depth.Compared to the reported epitaxial structures of symmetric waveguides,the new structure significantly reduces the etching depth of the grating while ensuring adequate reflection intensity and maintaining resonance.Moreover,to improve the output performance of the device,the new epitaxial structure has been optimized.Based on the traditional epitaxial structure,an energy release layer and an electron blocking layer are added to improve the electronic recombination efficiency.This improved structure has an output performance comparable to that of a symmetric waveguide,despite being able to have a smaller gain area.
基金Supported by National Key Research and Development Program of China(2021YFB3601403)National Natural Science Foundation of China(62105181)Taishan Scholar of Shandong Province(tsqn202306014)。
文摘Lutetium oxide(Lu_(2)O_(3))is recognized as a potential laser crystal material,and it is noted for its high ther⁃mal conductivity,low phonon energy,and strong crystal field.Nevertheless,its high melting point of 2450℃induces significant temperature gradients,resulting in a proliferation of defects.The scarcity of comprehensive research on this crystal’s defects hinders the enhancement of crystal quality.In this study,we employed the chemical etching method to examine the etching effects on Lu_(2)O_(3)crystals under various conditions and to identify the optimal conditions for investi⁃gating the dislocation defects of Lu_(2)O_(3)crystals(mass fraction 70%H3PO4,160℃,15-18 min).The morphologies of dislocation etch pits on the(111)-and(110)-oriented Lu_(2)O_(3)wafers were characterized using microscopy,scanning electron microscopy and atomic force microscopy.This research addresses the gap in understanding Lu_(2)O_(3)line defects and offers guidance for optimizing the crystal growth process and improving crystal quality.
文摘In order to obtain high-quality spherical RDX crystal particles,the RDX crystals were suspended in a mixed solvent of cyclohexanone and cyclohexane,subsequently a solvent etching study was carried out under the action of vibration/acoustic flow coupled flow field,which generated by resonance acoustic mixing.The effects of solvent ratio,temperature,acceleration and experiment time on morphology as well as particle size of RDX crystals were studied.Not only were the morphology,particle size distribution and crystal form of RDX crystals determined,but also the thermal decomposition performance and mechanical sensitivity of spherical RDX were examined and discussed.Results indicated that under the process of solvent/non-solvent volume ratio at 1:2,temperature of 40℃,acceleration of 40 g and experiment time of 4 h,α-type RDX crystal with sphericity of 0.92 can be obtained.Furthermore,the median particle size(D_(50))of spherical RDX crystals is 215.8 μm with a unimodal particle size distribution(size span 1.34).For one thing,the thermal decomposition peak temperature of spherical RDX is about 2.5℃ higher than that of raw RDX,and apparent activation energy reaches 444.68 kJ/mol.For another thing,impact sensitivity and friction sensitivity of spherical RDX are 18.18% and 33.33% lower than that of raw RDX,respectively.It demonstrates that safety of spherical RDX under thermal,impact and friction stimuli has been improved.
文摘An inductively coupled plasma (ICP) discharge and its etching behaviors for aluminum alloys were investigated in this report. A radio frequency power supply was used for plasma generation. The unique hardware configuration enabled one to control ion energy separately from plasma density. Plasma properties were measured with a Langmuir probe. Electron temperature, plasma potential and plasma density were found to be comparable with those reported from Electron Cyclotron Resonance (ECR) and other types of reactors[1].A mixture of HBr and chlorine gases were used for this aluminum etch study. Experimental matrices were designed with Response Surface Methodology (RSM) to analyze the process trends versus etch parameters, such as source power, bias power and gas composition. An etch rate of 8500A to 9000A per minute was obtained at 5 to 15 mTorr pressure ranges. Anisotropic profiles with high photoresist selectivity (5 to 1) and silicon dioxide selectivity greater than 10 were achieved with HBr addition into chlorine plasma.Bromine-containing chemistry for an aluminum etch in a low pressure ICP discharge showed great potential for use in ULSI fabrication. In addition, the hardware used was very simple and the chamber size was much smaller than other high density plasma sources.
基金Project Supported by National Natural Science Foundation of China(No.50637010)
文摘Gas spark switch is one of the key parts in pulsed power technology.Electrode erosion has great influence on the switch performance and lifetime.In this paper,a field distortion gas switch is selected for the experiment and a great deal of discharging experiments have been conducted in different test conditions.The forming process of etch pit as well as its influencing factors is discussed briefly and surface roughness coefficient(SRC) of the electrode is put forward to evaluate the state of electrode erosion.Experimental results show that current peak plays an important role in electrode erosion when waveforms of discharge current are the same,and electric charge and oscillation frequency of discharge current also have great effect on the electrode erosion when waveforms of discharge current are different.With the increase of discharge times,SRC decreases slowly at first and then decreases quickly after three thousand of discharge times.
文摘Mechanical properties and corrosion resistance of Si3N4 films are studied by using different experiment parameters, such as plasma enhanced chemical vapor deposition(PECVD) RF power, ratio of reaction gas, reaction pressure and working temperature. The etching process of Si3N4 is studied by inductively coupled plasma (ICP) with a gas mixture of SF6 and O2. The influence of the technique parameters, such as ICP power, DC bias, gas composition, total flow rate, on the etching selectivity of Si3N4/EPG533 which is used as a mask layer and the etching rate of Si3N4 is studied, in order to get a better etching selectivity of Si3N4/EPG533 with a faster etching rate of Si3N4. The optimized process parameters of etching Si3N4 by ICP are obtained after a series of experiments and analysis. Under the conditions of total ICP power of 250 W, DC bias of 50W, total flow rate of 40 sccm and O2 composition of 30%, the etching selectivity of 2.05 can be reached when Si3N4 etching rate is 336 nm/min.
基金the National Natural Science Foundation of China(Grant Nos.T2222027,12202416 and 12272359).
文摘Metal(aluminum and boron)based energetic materials have been wildly applied in various fields including aerospace,explosives and micro-devices due to their high energy density.Unfortunately,the low combustion efficiency and reactivity of metal fuels,especially boron(B),severely limit their practical applications.Herein,multi-component 3D microspheres of HMX/B/Al/PTFE(HBA)have been designed and successfully prepared by emulsion and solvent evaporation method to achieve superior energy and combustion reactivity.The reactivity and energy output of HBA are systematically measured by ignitionburning test,constant-volume explosion vessel system and bomb calorimetry.Due to the increased interfacial contact and reaction area,HBA shows higher flame propagation rate,faster pressurization rate and larger combustion heat of 29.95 cm/s,1077 kPa/s,and 6164.43 J/g,which is 1.5 times,3.5 times,and 1.03 times of the physical mixed counterpart(HBA-P).Meanwhile,HBA also shows enhanced energy output and reactivity than 3D microspheres of HMX/B/PTFE(HB)resulting from the high reactivity of Al.The reaction mechanism of 3D microspheres is comprehensively investigated through combustion emission spectral and thermal analysis(TG-DSC-MS).The superior reactivity and energy of HBA originate from the surface etching of fluorine to the inert shell(Al_(2)O_(3) and B_(2)O_(3))and the initiation effect of Al to B.This work offers a promising approach to design and prepare high-performance energetic materials for the practical applications.
文摘Diatomite, a type of biogenic mineral, is sourced from deposition and accumulation of diatom shell. Diatom shells are mainly composed of amorphous hydrated silica, which is categorized as non-crystalline opal-A according to the mineralogical classification. Diatomite has a characteristic macro/mesoporous structure and unique physical and chemical capabilities, such as high thermal stability, strong acid resistance, and high adsorption capacity, and thus is widely used as the filter aid, catalytic support, and adsorbent. However, the low surface area of diatomite shows disadvantage in adsorption. Moreover, the hydrophilic surface which contains abundant silanols is usually covered by adsorbed water, resulting in that the adsorption sites of diatomite were occupied and the adsorption capacity of hydrophobic guests decreased. In previous reports, zeolitization was employed to increase the specific surface area (SBET) and porosity of diatomite. However, the hydrophilic property of diatomite was not changed after zeolitization. It is due to that the zeolite formed on the surface area of diatomite contained some aluminum in its structure, which was highly hydrophilic. Therefore, it is significantly interesting to prepare the zeolitized diatomite with both large SBET and high hydrophobicity.
