A new type of 785 nm semiconductor laser device has been proposed.The thin cladding and mode expansion layer structure incorporated into the epitaxy on the p-side significantly impacts the regulation of grating etchin...A new type of 785 nm semiconductor laser device has been proposed.The thin cladding and mode expansion layer structure incorporated into the epitaxy on the p-side significantly impacts the regulation of grating etching depth.Thinning of the p-side waveguide layer makes the light field bias to the n-side cladding layer.By coordinating the confinement effect of the cladding layer,the light confinement factor on the p-side is regulated.On the other hand,the introduction of a mode expansion layer facilitates the expansion of the mode profile on the p side cladding layer.Both these factors contribute positively to reducing the grating etching depth.Compared to the reported epitaxial structures of symmetric waveguides,the new structure significantly reduces the etching depth of the grating while ensuring adequate reflection intensity and maintaining resonance.Moreover,to improve the output performance of the device,the new epitaxial structure has been optimized.Based on the traditional epitaxial structure,an energy release layer and an electron blocking layer are added to improve the electronic recombination efficiency.This improved structure has an output performance comparable to that of a symmetric waveguide,despite being able to have a smaller gain area.展开更多
Lutetium oxide(Lu_(2)O_(3))is recognized as a potential laser crystal material,and it is noted for its high ther⁃mal conductivity,low phonon energy,and strong crystal field.Nevertheless,its high melting point of 2450...Lutetium oxide(Lu_(2)O_(3))is recognized as a potential laser crystal material,and it is noted for its high ther⁃mal conductivity,low phonon energy,and strong crystal field.Nevertheless,its high melting point of 2450℃induces significant temperature gradients,resulting in a proliferation of defects.The scarcity of comprehensive research on this crystal’s defects hinders the enhancement of crystal quality.In this study,we employed the chemical etching method to examine the etching effects on Lu_(2)O_(3)crystals under various conditions and to identify the optimal conditions for investi⁃gating the dislocation defects of Lu_(2)O_(3)crystals(mass fraction 70%H3PO4,160℃,15-18 min).The morphologies of dislocation etch pits on the(111)-and(110)-oriented Lu_(2)O_(3)wafers were characterized using microscopy,scanning electron microscopy and atomic force microscopy.This research addresses the gap in understanding Lu_(2)O_(3)line defects and offers guidance for optimizing the crystal growth process and improving crystal quality.展开更多
In order to obtain high-quality spherical RDX crystal particles,the RDX crystals were suspended in a mixed solvent of cyclohexanone and cyclohexane,subsequently a solvent etching study was carried out under the action...In order to obtain high-quality spherical RDX crystal particles,the RDX crystals were suspended in a mixed solvent of cyclohexanone and cyclohexane,subsequently a solvent etching study was carried out under the action of vibration/acoustic flow coupled flow field,which generated by resonance acoustic mixing.The effects of solvent ratio,temperature,acceleration and experiment time on morphology as well as particle size of RDX crystals were studied.Not only were the morphology,particle size distribution and crystal form of RDX crystals determined,but also the thermal decomposition performance and mechanical sensitivity of spherical RDX were examined and discussed.Results indicated that under the process of solvent/non-solvent volume ratio at 1:2,temperature of 40℃,acceleration of 40 g and experiment time of 4 h,α-type RDX crystal with sphericity of 0.92 can be obtained.Furthermore,the median particle size(D_(50))of spherical RDX crystals is 215.8 μm with a unimodal particle size distribution(size span 1.34).For one thing,the thermal decomposition peak temperature of spherical RDX is about 2.5℃ higher than that of raw RDX,and apparent activation energy reaches 444.68 kJ/mol.For another thing,impact sensitivity and friction sensitivity of spherical RDX are 18.18% and 33.33% lower than that of raw RDX,respectively.It demonstrates that safety of spherical RDX under thermal,impact and friction stimuli has been improved.展开更多
An inductively coupled plasma (ICP) discharge and its etching behaviors for aluminum alloys were investigated in this report. A radio frequency power supply was used for plasma generation. The unique hardware configur...An inductively coupled plasma (ICP) discharge and its etching behaviors for aluminum alloys were investigated in this report. A radio frequency power supply was used for plasma generation. The unique hardware configuration enabled one to control ion energy separately from plasma density. Plasma properties were measured with a Langmuir probe. Electron temperature, plasma potential and plasma density were found to be comparable with those reported from Electron Cyclotron Resonance (ECR) and other types of reactors[1].A mixture of HBr and chlorine gases were used for this aluminum etch study. Experimental matrices were designed with Response Surface Methodology (RSM) to analyze the process trends versus etch parameters, such as source power, bias power and gas composition. An etch rate of 8500A to 9000A per minute was obtained at 5 to 15 mTorr pressure ranges. Anisotropic profiles with high photoresist selectivity (5 to 1) and silicon dioxide selectivity greater than 10 were achieved with HBr addition into chlorine plasma.Bromine-containing chemistry for an aluminum etch in a low pressure ICP discharge showed great potential for use in ULSI fabrication. In addition, the hardware used was very simple and the chamber size was much smaller than other high density plasma sources.展开更多
文摘A new type of 785 nm semiconductor laser device has been proposed.The thin cladding and mode expansion layer structure incorporated into the epitaxy on the p-side significantly impacts the regulation of grating etching depth.Thinning of the p-side waveguide layer makes the light field bias to the n-side cladding layer.By coordinating the confinement effect of the cladding layer,the light confinement factor on the p-side is regulated.On the other hand,the introduction of a mode expansion layer facilitates the expansion of the mode profile on the p side cladding layer.Both these factors contribute positively to reducing the grating etching depth.Compared to the reported epitaxial structures of symmetric waveguides,the new structure significantly reduces the etching depth of the grating while ensuring adequate reflection intensity and maintaining resonance.Moreover,to improve the output performance of the device,the new epitaxial structure has been optimized.Based on the traditional epitaxial structure,an energy release layer and an electron blocking layer are added to improve the electronic recombination efficiency.This improved structure has an output performance comparable to that of a symmetric waveguide,despite being able to have a smaller gain area.
基金Supported by National Key Research and Development Program of China(2021YFB3601403)National Natural Science Foundation of China(62105181)Taishan Scholar of Shandong Province(tsqn202306014)。
文摘Lutetium oxide(Lu_(2)O_(3))is recognized as a potential laser crystal material,and it is noted for its high ther⁃mal conductivity,low phonon energy,and strong crystal field.Nevertheless,its high melting point of 2450℃induces significant temperature gradients,resulting in a proliferation of defects.The scarcity of comprehensive research on this crystal’s defects hinders the enhancement of crystal quality.In this study,we employed the chemical etching method to examine the etching effects on Lu_(2)O_(3)crystals under various conditions and to identify the optimal conditions for investi⁃gating the dislocation defects of Lu_(2)O_(3)crystals(mass fraction 70%H3PO4,160℃,15-18 min).The morphologies of dislocation etch pits on the(111)-and(110)-oriented Lu_(2)O_(3)wafers were characterized using microscopy,scanning electron microscopy and atomic force microscopy.This research addresses the gap in understanding Lu_(2)O_(3)line defects and offers guidance for optimizing the crystal growth process and improving crystal quality.
文摘In order to obtain high-quality spherical RDX crystal particles,the RDX crystals were suspended in a mixed solvent of cyclohexanone and cyclohexane,subsequently a solvent etching study was carried out under the action of vibration/acoustic flow coupled flow field,which generated by resonance acoustic mixing.The effects of solvent ratio,temperature,acceleration and experiment time on morphology as well as particle size of RDX crystals were studied.Not only were the morphology,particle size distribution and crystal form of RDX crystals determined,but also the thermal decomposition performance and mechanical sensitivity of spherical RDX were examined and discussed.Results indicated that under the process of solvent/non-solvent volume ratio at 1:2,temperature of 40℃,acceleration of 40 g and experiment time of 4 h,α-type RDX crystal with sphericity of 0.92 can be obtained.Furthermore,the median particle size(D_(50))of spherical RDX crystals is 215.8 μm with a unimodal particle size distribution(size span 1.34).For one thing,the thermal decomposition peak temperature of spherical RDX is about 2.5℃ higher than that of raw RDX,and apparent activation energy reaches 444.68 kJ/mol.For another thing,impact sensitivity and friction sensitivity of spherical RDX are 18.18% and 33.33% lower than that of raw RDX,respectively.It demonstrates that safety of spherical RDX under thermal,impact and friction stimuli has been improved.
文摘An inductively coupled plasma (ICP) discharge and its etching behaviors for aluminum alloys were investigated in this report. A radio frequency power supply was used for plasma generation. The unique hardware configuration enabled one to control ion energy separately from plasma density. Plasma properties were measured with a Langmuir probe. Electron temperature, plasma potential and plasma density were found to be comparable with those reported from Electron Cyclotron Resonance (ECR) and other types of reactors[1].A mixture of HBr and chlorine gases were used for this aluminum etch study. Experimental matrices were designed with Response Surface Methodology (RSM) to analyze the process trends versus etch parameters, such as source power, bias power and gas composition. An etch rate of 8500A to 9000A per minute was obtained at 5 to 15 mTorr pressure ranges. Anisotropic profiles with high photoresist selectivity (5 to 1) and silicon dioxide selectivity greater than 10 were achieved with HBr addition into chlorine plasma.Bromine-containing chemistry for an aluminum etch in a low pressure ICP discharge showed great potential for use in ULSI fabrication. In addition, the hardware used was very simple and the chamber size was much smaller than other high density plasma sources.
