We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is ...We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a controllable electromigration process and the individual silicon quantum dot in the junction is deter- mined to be a Si 170 cluster. Differential conductance as a function of the bias and gate voltage clearly shows the Coulomb diamond which confirms that the transport is dominated by a single silicon quantum dot. It is found that the charging energy can be as large as 300meV, which is a result of the large capacitance of a small silicon quantum dot （-1.8 nm）. This large Coulomb interaction can potentially enable a single electron transistor to work at room temperature. The level spacing of the excited state can be as large as 10meV, which enables us to manipulate individual spin via an external magnetic field. The resulting Zeeman splitting is measured and the g factor of 2.3 is obtained, suggesting relatively weak electron-electron interaction in the silicon quantum dot which is beneficial for spin coherence time.展开更多
Based on the nonequilibrium Green function method and density functional theory calculations, we theoretically investigate the effect of chirality on the electronic transport properties of thioxanthene-based molecular...Based on the nonequilibrium Green function method and density functional theory calculations, we theoretically investigate the effect of chirality on the electronic transport properties of thioxanthene-based molecular switch. The molecule comprises the switch which can exhibit different chiralities, that is, cis-form and trans-form by ultraviolet or visible irradiation. The results clearly reveal that the switching behaviors can be realized when the molecule converts between cis-form and trans-form. ~urthermore, the on-off ratio can be modulated by the chirality of the carbon nanotube electrodes. The maximum on-off ratio can reach 109 at 0.4 V for the armchair junction, suggesting potential applications of this type of junctions in future design of functional molecular devices.展开更多
As one of the most important elements in linear transformer driver(LTD) based systems, the gas pressurized closing switches are required to operate with a very low prefire probability during the DC-charging process to...As one of the most important elements in linear transformer driver(LTD) based systems, the gas pressurized closing switches are required to operate with a very low prefire probability during the DC-charging process to ensure reliable operation and stable output of the whole pulsed power system. The most direct and effective way to control the prefire probability is to select a suitable working coefficient. The study of the development characteristics of the initially generated electrons is useful for optimizing the working coefficient and improving the prefire characteristic of the switches. In this paper an ultraviolet pulsed laser is used to generate initial electrons inside the gap volume. A current measuring system is used to measure the time-dependent current generated by the growth of the initial electrons so as to study the development characteristics of the electrons under different working coefficients. Experimental results show that the development characteristics of the initial electrons are influenced obviously by the working coefficient. With the increase of the working coefficient, the development degree of the electrons increases consequently. At the same times, there is a threshold of working coefficient which produces the effect of ionization on electrons. The range of the threshold has a slow growth but remains close to 65% with the gas pressure increase. When the working coefficient increases further, γ processes are starting to be generated inside the gap volume. In addition, an optimal working coefficient beneficial for improving the prefire characteristic is indicated and further tested.展开更多
A single-stage single-switch high- frequency electronic ballast topology is presented. The circuit topology is the integration of a buck power- factor-correction （PFC） converter and a class E resonant inverter with ...A single-stage single-switch high- frequency electronic ballast topology is presented. The circuit topology is the integration of a buck power- factor-correction （PFC） converter and a class E resonant inverter with only one active power switch. The buck converter is operated in discontinuous conduction mode and at a fixed switching frequency, and constant duty cycle to achieve high power factor and it can be controlled easily. Detailed analysis of the operation and characteristics of the circuit is provided. Simulation results satisfy present standard requirements.展开更多
A two-pulse method is used to determine the insulation recovery time of the gas spark gap switch with different types of gas applied in a high power accelerator with a water dielectric pulse forming line. At the break...A two-pulse method is used to determine the insulation recovery time of the gas spark gap switch with different types of gas applied in a high power accelerator with a water dielectric pulse forming line. At the breakdown voltage of 450 kV, with the vacuum diode voltage of about 200 kV, and a current of 30 kA, recovery characteristics of H2, N2, SF6 were studied. The recovery percentages of the gas breakdown voltage and vacuum diode voltage were determined. The results show that hydrogen has the best recovery characteristics. At a pulse interval of 8.8 ms, the recovery percentages of both the gas breakdown voltage and vacuum diode voltage for hydrogen exceed 95%. For SF6 and N2 with an interval of 25 ms and 50 ms respectively, a 90% voltage recovery was obtained. The experiments also proved that the repetitive rate of the high power accelerator with a pulse forming line is mainly restricted by the gas switch repetitive rate; the recovery percentages of the vacuum diode voltage are limited by the recovery percentages of the gas switch breakdown voltage. The hydrogen switch can be employed for a high repetitive rate-high power accelerator with a pulse forming line.展开更多
The memristor, as the fourth basic circuit element, has drawn worldwide attention since its physical implementation was released by HP Labs in 2008. However, at the nano-scale, there are many difficulties for memristo...The memristor, as the fourth basic circuit element, has drawn worldwide attention since its physical implementation was released by HP Labs in 2008. However, at the nano-scale, there are many difficulties for memristor physical realization. So a better understanding and analysis of a good model will help us to study the characteristics of a memristor. In this paper, we analyze a possible mechanism for the switching behavior of a memristor with a Pt/TiO2/Pt structure, and explain the changes of electronic barrier at the interface of Pt/TiO2. Then, a quantitative analysis about each parameter in the exponential model of memristor is conducted based on the calculation results. The analysis results are validated by simulation results. The efforts made in this paper will provide researchers with theoretical guidance on choosing appropriate values for(α, β, χ, γ) in this exponential model.展开更多
Characteristics of electron emission induced by a surface flashover trigger device in a low-pressure trigger switch were investigated. A test method to measure the emitted charges from the trigger device was developed...Characteristics of electron emission induced by a surface flashover trigger device in a low-pressure trigger switch were investigated. A test method to measure the emitted charges from the trigger device was developed, and the factors affecting the emitted charges were analyzed. The results indicated that the major emitted charges from the trigger device were induced by surface plasma generated by surface flashover occurring on the trigger dielectric material. The emitted charges and the peak emission current increased linearly with the change in the trigger voltage and bias voltage. The emitted charges collected from the anode were affected by the gap distance. However, the emitted charges were less affected by the anode diameter. Furthermore, the emitted charges and the peak emission current decreased rapidly with the increase in gas pressure in a range from 0 Pa to 100 Pa, and then remained stable or changed slightly when the increase in gas pressure up to 2400 Pa.展开更多
An air-spark switch plasma was diagnosed by the Mach–Zehnder laser interferometer with ultra-high spatial and temporal resolution. The interferograms containing plasma phase shift information at different time were o...An air-spark switch plasma was diagnosed by the Mach–Zehnder laser interferometer with ultra-high spatial and temporal resolution. The interferograms containing plasma phase shift information at different time were obtained. The phase shift distributions of the plasma were extracted by numerically processing the interferograms. The three-dimensional(3 D) electron density distributions of the air-spark switch plasma were then obtained. The working process of the air-spark switch was described by analyzing the temporal and spatial evolution of the plasma electron density.展开更多
Pseudo-spark switch（PSS） is one of the most widely used discharge switches for pulse power technology.It has many special characteristics such as reliability in a wide voltage range,small delay time,as well as small...Pseudo-spark switch（PSS） is one of the most widely used discharge switches for pulse power technology.It has many special characteristics such as reliability in a wide voltage range,small delay time,as well as small delay jitter.In this paper,the measuring method for the initial plasma of ZnO surface flashover triggering device of PSS is studied and the results of the measurement show that the electron emission charge is mainly influenced by trigger voltage,gas pressure and DC bias voltage.When the bias voltage increases from 2 kV to 6 kV with the gap distancc fixed at 3 mm,the electron emission charge changes from 2 μC to about 6μC.When the gap distance changes from 3 mm to 5 mm with the bias voltage fixed at 2 kV,the electron emission charge increases from 1.5 μC to 2.5μC.When the gap distance is 4 mm,the hold-off voltage of PSS is 45 kV at gas pressure of 2 Pa,the minimum operating voltage is less than 1 kV.So,the operating scope is from 2.22%to 99%of its self-breakdown voltage.The discharging delay time decreases from 450 ns to 150 ns when the trigger pulse voltage is 1 kV and the discharging voltage is changed from 1 kV to 12 kV.When the trigger pulse voltage is 6 kV,the discharging delay time is less than 100 ns and changes from 100 ns to 50 ns,and the delay jitters are less than30 ns.展开更多
基金Supported by the National Key Research and Development Program of China under Grant No 2017YFA0303200the National Natural Science Foundation of China under Grant Nos U1732273,U1732159,91421109,91622115,11522432,11574217 and 61774133the Natural Science Foundation of Jiangsu Province under Grant No BK20160659
文摘We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a controllable electromigration process and the individual silicon quantum dot in the junction is deter- mined to be a Si 170 cluster. Differential conductance as a function of the bias and gate voltage clearly shows the Coulomb diamond which confirms that the transport is dominated by a single silicon quantum dot. It is found that the charging energy can be as large as 300meV, which is a result of the large capacitance of a small silicon quantum dot （-1.8 nm）. This large Coulomb interaction can potentially enable a single electron transistor to work at room temperature. The level spacing of the excited state can be as large as 10meV, which enables us to manipulate individual spin via an external magnetic field. The resulting Zeeman splitting is measured and the g factor of 2.3 is obtained, suggesting relatively weak electron-electron interaction in the silicon quantum dot which is beneficial for spin coherence time.
基金Supported by the National Natural Science Foundation of China under Grant No 11004156the Natural Science Foundation of Shaanxi Province under Grant No 2014JM1025+2 种基金the Science and Technology Star Project of Shaanxi Province under Grant No2016KJXX-38the Special Foundation of Key Academic Subjects Development of Shaanxi Province under Grant No 2008-169the Xi'an Polytechnic University Young Scholar Supporting Plan under Grant No 2013-06
文摘Based on the nonequilibrium Green function method and density functional theory calculations, we theoretically investigate the effect of chirality on the electronic transport properties of thioxanthene-based molecular switch. The molecule comprises the switch which can exhibit different chiralities, that is, cis-form and trans-form by ultraviolet or visible irradiation. The results clearly reveal that the switching behaviors can be realized when the molecule converts between cis-form and trans-form. ~urthermore, the on-off ratio can be modulated by the chirality of the carbon nanotube electrodes. The maximum on-off ratio can reach 109 at 0.4 V for the armchair junction, suggesting potential applications of this type of junctions in future design of functional molecular devices.
基金supported by the Foundation of State Key Laboratory of Intense Pulsed Radiation Simulation and Effect (No. SKLIPR1601)
文摘As one of the most important elements in linear transformer driver(LTD) based systems, the gas pressurized closing switches are required to operate with a very low prefire probability during the DC-charging process to ensure reliable operation and stable output of the whole pulsed power system. The most direct and effective way to control the prefire probability is to select a suitable working coefficient. The study of the development characteristics of the initially generated electrons is useful for optimizing the working coefficient and improving the prefire characteristic of the switches. In this paper an ultraviolet pulsed laser is used to generate initial electrons inside the gap volume. A current measuring system is used to measure the time-dependent current generated by the growth of the initial electrons so as to study the development characteristics of the electrons under different working coefficients. Experimental results show that the development characteristics of the initial electrons are influenced obviously by the working coefficient. With the increase of the working coefficient, the development degree of the electrons increases consequently. At the same times, there is a threshold of working coefficient which produces the effect of ionization on electrons. The range of the threshold has a slow growth but remains close to 65% with the gas pressure increase. When the working coefficient increases further, γ processes are starting to be generated inside the gap volume. In addition, an optimal working coefficient beneficial for improving the prefire characteristic is indicated and further tested.
文摘A single-stage single-switch high- frequency electronic ballast topology is presented. The circuit topology is the integration of a buck power- factor-correction （PFC） converter and a class E resonant inverter with only one active power switch. The buck converter is operated in discontinuous conduction mode and at a fixed switching frequency, and constant duty cycle to achieve high power factor and it can be controlled easily. Detailed analysis of the operation and characteristics of the circuit is provided. Simulation results satisfy present standard requirements.
基金National Natural Science Foundation of China(No.10675168)
文摘A two-pulse method is used to determine the insulation recovery time of the gas spark gap switch with different types of gas applied in a high power accelerator with a water dielectric pulse forming line. At the breakdown voltage of 450 kV, with the vacuum diode voltage of about 200 kV, and a current of 30 kA, recovery characteristics of H2, N2, SF6 were studied. The recovery percentages of the gas breakdown voltage and vacuum diode voltage were determined. The results show that hydrogen has the best recovery characteristics. At a pulse interval of 8.8 ms, the recovery percentages of both the gas breakdown voltage and vacuum diode voltage for hydrogen exceed 95%. For SF6 and N2 with an interval of 25 ms and 50 ms respectively, a 90% voltage recovery was obtained. The experiments also proved that the repetitive rate of the high power accelerator with a pulse forming line is mainly restricted by the gas switch repetitive rate; the recovery percentages of the vacuum diode voltage are limited by the recovery percentages of the gas switch breakdown voltage. The hydrogen switch can be employed for a high repetitive rate-high power accelerator with a pulse forming line.
基金supported by the National Natural Science Foundation of China(Grant Nos.61374150 and 61374171)the State Key Program of the National Natural Science Foundation of China(Grant No.61134012)+1 种基金the National Basic Research Program of China(Grant No.2011CB710606)the Fundamental Research Funds for the Central Universities,China(Grant No.2013TS126)
文摘The memristor, as the fourth basic circuit element, has drawn worldwide attention since its physical implementation was released by HP Labs in 2008. However, at the nano-scale, there are many difficulties for memristor physical realization. So a better understanding and analysis of a good model will help us to study the characteristics of a memristor. In this paper, we analyze a possible mechanism for the switching behavior of a memristor with a Pt/TiO2/Pt structure, and explain the changes of electronic barrier at the interface of Pt/TiO2. Then, a quantitative analysis about each parameter in the exponential model of memristor is conducted based on the calculation results. The analysis results are validated by simulation results. The efforts made in this paper will provide researchers with theoretical guidance on choosing appropriate values for(α, β, χ, γ) in this exponential model.
基金supported by the New Century Talent Foundation of Ministry of Education of China (NCET-08-0438)
文摘Characteristics of electron emission induced by a surface flashover trigger device in a low-pressure trigger switch were investigated. A test method to measure the emitted charges from the trigger device was developed, and the factors affecting the emitted charges were analyzed. The results indicated that the major emitted charges from the trigger device were induced by surface plasma generated by surface flashover occurring on the trigger dielectric material. The emitted charges and the peak emission current increased linearly with the change in the trigger voltage and bias voltage. The emitted charges collected from the anode were affected by the gap distance. However, the emitted charges were less affected by the anode diameter. Furthermore, the emitted charges and the peak emission current decreased rapidly with the increase in gas pressure in a range from 0 Pa to 100 Pa, and then remained stable or changed slightly when the increase in gas pressure up to 2400 Pa.
文摘An air-spark switch plasma was diagnosed by the Mach–Zehnder laser interferometer with ultra-high spatial and temporal resolution. The interferograms containing plasma phase shift information at different time were obtained. The phase shift distributions of the plasma were extracted by numerically processing the interferograms. The three-dimensional(3 D) electron density distributions of the air-spark switch plasma were then obtained. The working process of the air-spark switch was described by analyzing the temporal and spatial evolution of the plasma electron density.
基金supported by National Natural Science Foundation of China(No.51177131)the New Century Talent Foundation of Ministry of Education of China(NCET-08-0438)
文摘Pseudo-spark switch（PSS） is one of the most widely used discharge switches for pulse power technology.It has many special characteristics such as reliability in a wide voltage range,small delay time,as well as small delay jitter.In this paper,the measuring method for the initial plasma of ZnO surface flashover triggering device of PSS is studied and the results of the measurement show that the electron emission charge is mainly influenced by trigger voltage,gas pressure and DC bias voltage.When the bias voltage increases from 2 kV to 6 kV with the gap distancc fixed at 3 mm,the electron emission charge changes from 2 μC to about 6μC.When the gap distance changes from 3 mm to 5 mm with the bias voltage fixed at 2 kV,the electron emission charge increases from 1.5 μC to 2.5μC.When the gap distance is 4 mm,the hold-off voltage of PSS is 45 kV at gas pressure of 2 Pa,the minimum operating voltage is less than 1 kV.So,the operating scope is from 2.22%to 99%of its self-breakdown voltage.The discharging delay time decreases from 450 ns to 150 ns when the trigger pulse voltage is 1 kV and the discharging voltage is changed from 1 kV to 12 kV.When the trigger pulse voltage is 6 kV,the discharging delay time is less than 100 ns and changes from 100 ns to 50 ns,and the delay jitters are less than30 ns.
