We demonstrate an electric-controlled terahertz（THz） modulator which can be used to realize amplitude modulation of terahertz waves with slight photo-doping. The THz pulse transmission was efficiently modulated by e...We demonstrate an electric-controlled terahertz（THz） modulator which can be used to realize amplitude modulation of terahertz waves with slight photo-doping. The THz pulse transmission was efficiently modulated by electrically controlling the monolayer silicon-based device. The modulation depth reached 100% almost when the applied voltage was 7V at an external laser intensity of 0.6W/cm2. The saturation voltage reduced with the increase of the photo-excited intensity. In a THz continuous wave（CW）system, a significant fall in both THz transmission and reflection was also observed with the increase of applied voltage. This reduction in the THz transmission and reflection was induced by the absorption for electron injection. The results show that a high-efficiency and high modulation depth broadband electric-controlled terahertz modulator in a pure Si structure has been realized.展开更多
We investigated the electric controllable spin-filtering effect in a zigzag phosphorene nanoribbon(ZPNR) based normal–antiferromagnet–normal junction. Two ferromagnets are closely coupled to the edges of the nanorib...We investigated the electric controllable spin-filtering effect in a zigzag phosphorene nanoribbon(ZPNR) based normal–antiferromagnet–normal junction. Two ferromagnets are closely coupled to the edges of the nanoribbon and form the edge-to-edge antiferromagnetism. Under an in-plane electric field, the two degenerate edge bands of the edge-to-edge antiferromagnet split into four spin-polarized sub-bands and a 100% spin-polarized current can be easily induced with the maximal conductance 2e~2/h. The spin polarization changes with the strength of the electric field and the exchange field,and changes sign at opposite electric fields. The spin-polarized current switches from one edge to the other by reversing the direction of the electric field. The edge current can also be controlled spatially by changing the electric potential of the scattering region. The manipulation of edge current is useful in spin-transfer-torque magnetic random-access memory and provides a practical way to develop controllable spintronic devices.展开更多
Dzyaloshinskii–Moriya interaction(DMI) is under extensive investigation considering its crucial status in chiral magnetic orders, such as Néel-type domain wall(DW) and skyrmions. It has been reported that the in...Dzyaloshinskii–Moriya interaction(DMI) is under extensive investigation considering its crucial status in chiral magnetic orders, such as Néel-type domain wall(DW) and skyrmions. It has been reported that the interfacial DMI originating from Rashba spin–orbit coupling(SOC) can be linearly tuned with strong external electric fields. In this work, we experimentally demonstrate that the strength of DMI exhibits rapid fluctuations, ranging from 10% to 30% of its original value, as a function of applied electric fields in Pt/Co/MgO heterostructures within the small field regime(< 10-2V/nm). Brillouin light scattering(BLS) experiments have been performed to measure DMI, and first-principles calculations show agreement with this observation, which can be explained by the variation in orbital hybridization at the Co/MgO interface in response to the weak electric fields. Our results on voltage control of DMI(VCDMI) suggest that research related to the voltage control of magnetic anisotropy for spin–orbit torque or the motion control of skyrmions might also have to consider the role of the external electric field on DMI as small voltages are generally used for the magnetoresistance detection.展开更多
Significant electric control of exchange bias effect in a simple CoO1-δ/Co system, grown on piezoelectric Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (110) (PMN-PT) substrates, is achieved at room temperature. Obvious changes in both t...Significant electric control of exchange bias effect in a simple CoO1-δ/Co system, grown on piezoelectric Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (110) (PMN-PT) substrates, is achieved at room temperature. Obvious changes in both the coercivity field (HC) and the exchange bias field (HE), of 31% and 5%, respectively, have been observed when the electric field is applied to the substrate. While the change of coercivity is related to the enhanced uniaxial anisotropy in the ferromagnetic layer, the change of the exchange bias field can only originate from the spin reorientation in the antiferromagnetic CoO1-δ layer caused by the strain-induced magnetoelastic effect. A large HE/HC > 2, and HE~ 110 Oe at room temperature, as well as the low-energy fabrication of this system, make it a practical system for spintronic device applications.展开更多
Recent progress in the electrical control of magnetism in oxides,with profound physics and enormous potential applications,is reviewed and illustrated.In the first part,we provide a comprehensive summary of the electr...Recent progress in the electrical control of magnetism in oxides,with profound physics and enormous potential applications,is reviewed and illustrated.In the first part,we provide a comprehensive summary of the electrical control of magnetism in the classic multiferroic heterostructures and clarify the various mechanisms lying behind them.The second part focuses on the novel technique of electric double layer gating for driving a significant electronic phase transition in magnetic oxides by a small voltage.In the third part,electric field applied on ordinary dielectric oxide is used to control the magnetic phenomenon originating from charge transfer and orbital reconstruction at the interface between dissimilar correlated oxides.At the end,we analyze the challenges in electrical control of magnetism in oxides,both the mechanisms and practical applications,which will inspire more in-depth research and advance the development in this field.展开更多
An innovative design of electric suspensions was developed in this study to help realize slow active suspension easily and quickly.This design was driven by screw through double slider-rod arranged symmetrically as a ...An innovative design of electric suspensions was developed in this study to help realize slow active suspension easily and quickly.This design was driven by screw through double slider-rod arranged symmetrically as a substitute for two springs.Based on a mathematical modeling,suspension parameters were introduced for a certain type of wheeled vehicles.The functions and its mechanism in regulating terrain clearance and adjusting attitudes were subsequently explained respectively,together with its semi-active control mechanism and characteristics In conclusion,our data in the study show that the new mechanical design of suspensions not only could realize adjusting terrain clearance and static vehicle pose,but also had an ideal stiffness that could realize a semi-active suspension function through adjusting suspension＇s stiffness.Therefore it can bequite suitable for off-road wheeled vehicles and military wheeled vehicles.展开更多
Memtransistors combine memristors and field-effect transistors, which can introduce multi-port control and have significant applications for enriching storage methods. In this paper, multilayer α-In2Se3and MoS2were t...Memtransistors combine memristors and field-effect transistors, which can introduce multi-port control and have significant applications for enriching storage methods. In this paper, multilayer α-In2Se3and MoS2were transferred to the substrate by the mechanical exfoliation method, then a heterojunction MoS_(2)/α-In_(2)Se_(3) memtransistor was prepared. Neural synaptic simulations were performed using electrical and optical pulses as input signals. Through measurements, such as excitatory/inhibitory post-synaptic current(EPSC/IPSC), long-term potentiation/depression(LTP/LTD), and paired-pulse facilitation/depression(PPF/PPD), it can be found that the fabricated device could simulate various functions of neural synapses well, and could work as an electronic synapse in artificial neural networks, proposing a possible solution for neuromorphic storage and computation.展开更多
基金supported by the Natural Science Foundation of Beijing under Grant No.4144069the Science and Technology Project of Beijing Municipal Education Commission under Grant No.KM201410028004
文摘We demonstrate an electric-controlled terahertz（THz） modulator which can be used to realize amplitude modulation of terahertz waves with slight photo-doping. The THz pulse transmission was efficiently modulated by electrically controlling the monolayer silicon-based device. The modulation depth reached 100% almost when the applied voltage was 7V at an external laser intensity of 0.6W/cm2. The saturation voltage reduced with the increase of the photo-excited intensity. In a THz continuous wave（CW）system, a significant fall in both THz transmission and reflection was also observed with the increase of applied voltage. This reduction in the THz transmission and reflection was induced by the absorption for electron injection. The results show that a high-efficiency and high modulation depth broadband electric-controlled terahertz modulator in a pure Si structure has been realized.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.12174077 and 12174051)the Science Foundation of GuangDong Province (Grant No.2021A1515012363)GuangDong Basic and Applied Basic Research Foundation (Grant No.2022A1515110011)。
文摘We investigated the electric controllable spin-filtering effect in a zigzag phosphorene nanoribbon(ZPNR) based normal–antiferromagnet–normal junction. Two ferromagnets are closely coupled to the edges of the nanoribbon and form the edge-to-edge antiferromagnetism. Under an in-plane electric field, the two degenerate edge bands of the edge-to-edge antiferromagnet split into four spin-polarized sub-bands and a 100% spin-polarized current can be easily induced with the maximal conductance 2e~2/h. The spin polarization changes with the strength of the electric field and the exchange field,and changes sign at opposite electric fields. The spin-polarized current switches from one edge to the other by reversing the direction of the electric field. The edge current can also be controlled spatially by changing the electric potential of the scattering region. The manipulation of edge current is useful in spin-transfer-torque magnetic random-access memory and provides a practical way to develop controllable spintronic devices.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61627813,62204018,and 61571023)the Beijing Municipal Science and Technology Project(Grant No.Z201100004220002)+2 种基金the National Key Technology Program of China(Grant No.2017ZX01032101)the Program of Introducing Talents of Discipline to Universities in China(Grant No.B16001)the VR Innovation Platform from Qingdao Science and Technology Commission.
文摘Dzyaloshinskii–Moriya interaction(DMI) is under extensive investigation considering its crucial status in chiral magnetic orders, such as Néel-type domain wall(DW) and skyrmions. It has been reported that the interfacial DMI originating from Rashba spin–orbit coupling(SOC) can be linearly tuned with strong external electric fields. In this work, we experimentally demonstrate that the strength of DMI exhibits rapid fluctuations, ranging from 10% to 30% of its original value, as a function of applied electric fields in Pt/Co/MgO heterostructures within the small field regime(< 10-2V/nm). Brillouin light scattering(BLS) experiments have been performed to measure DMI, and first-principles calculations show agreement with this observation, which can be explained by the variation in orbital hybridization at the Co/MgO interface in response to the weak electric fields. Our results on voltage control of DMI(VCDMI) suggest that research related to the voltage control of magnetic anisotropy for spin–orbit torque or the motion control of skyrmions might also have to consider the role of the external electric field on DMI as small voltages are generally used for the magnetoresistance detection.
基金Project supported by the National Key R&D Program of China(Grant Nos.2017YFA0206303 and 2017YFA020630)the National Natural Science Foundation of China(Grant Nos.11975035 and 51731001).
文摘Significant electric control of exchange bias effect in a simple CoO1-δ/Co system, grown on piezoelectric Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (110) (PMN-PT) substrates, is achieved at room temperature. Obvious changes in both the coercivity field (HC) and the exchange bias field (HE), of 31% and 5%, respectively, have been observed when the electric field is applied to the substrate. While the change of coercivity is related to the enhanced uniaxial anisotropy in the ferromagnetic layer, the change of the exchange bias field can only originate from the spin reorientation in the antiferromagnetic CoO1-δ layer caused by the strain-induced magnetoelastic effect. A large HE/HC > 2, and HE~ 110 Oe at room temperature, as well as the low-energy fabrication of this system, make it a practical system for spintronic device applications.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51322101,51202125,and 51231004)the National Hi-tech Research and Development Project of China(Grant Nos.2014AA032904 and 2014AA032901)
文摘Recent progress in the electrical control of magnetism in oxides,with profound physics and enormous potential applications,is reviewed and illustrated.In the first part,we provide a comprehensive summary of the electrical control of magnetism in the classic multiferroic heterostructures and clarify the various mechanisms lying behind them.The second part focuses on the novel technique of electric double layer gating for driving a significant electronic phase transition in magnetic oxides by a small voltage.In the third part,electric field applied on ordinary dielectric oxide is used to control the magnetic phenomenon originating from charge transfer and orbital reconstruction at the interface between dissimilar correlated oxides.At the end,we analyze the challenges in electrical control of magnetism in oxides,both the mechanisms and practical applications,which will inspire more in-depth research and advance the development in this field.
基金Supported by the Ministerial Level Research Foundation(4030.4)
文摘An innovative design of electric suspensions was developed in this study to help realize slow active suspension easily and quickly.This design was driven by screw through double slider-rod arranged symmetrically as a substitute for two springs.Based on a mathematical modeling,suspension parameters were introduced for a certain type of wheeled vehicles.The functions and its mechanism in regulating terrain clearance and adjusting attitudes were subsequently explained respectively,together with its semi-active control mechanism and characteristics In conclusion,our data in the study show that the new mechanical design of suspensions not only could realize adjusting terrain clearance and static vehicle pose,but also had an ideal stiffness that could realize a semi-active suspension function through adjusting suspension＇s stiffness.Therefore it can bequite suitable for off-road wheeled vehicles and military wheeled vehicles.
基金Project supported by the National Natural Science Foundation of China (Grant No. 51702245)。
文摘Memtransistors combine memristors and field-effect transistors, which can introduce multi-port control and have significant applications for enriching storage methods. In this paper, multilayer α-In2Se3and MoS2were transferred to the substrate by the mechanical exfoliation method, then a heterojunction MoS_(2)/α-In_(2)Se_(3) memtransistor was prepared. Neural synaptic simulations were performed using electrical and optical pulses as input signals. Through measurements, such as excitatory/inhibitory post-synaptic current(EPSC/IPSC), long-term potentiation/depression(LTP/LTD), and paired-pulse facilitation/depression(PPF/PPD), it can be found that the fabricated device could simulate various functions of neural synapses well, and could work as an electronic synapse in artificial neural networks, proposing a possible solution for neuromorphic storage and computation.
