Nd-doped In_2O_3 nanowires were fabricated by an Au-catalyzed chemical vapor deposition method.Nd atoms were successfully doped into the In_2O_3 host lattice structure,as revealed by energy dispersive x-ray spectrosco...Nd-doped In_2O_3 nanowires were fabricated by an Au-catalyzed chemical vapor deposition method.Nd atoms were successfully doped into the In_2O_3 host lattice structure,as revealed by energy dispersive x-ray spectroscopy,x-ray photoelectron spectroscopy,Raman spectroscopy,and x-ray diffraction.Robust room temperature ferromagnetism was observed in Nd-doped In_2O_3 nanowires,which was attributed to the long-range-mediated magnetization among Nd^（3＋）-vacancy complexes through percolation-bound magnetic polarons.展开更多
Diluted ferromagnetic semiconductors（DMSs） that combine the properties of semiconductors with ferromagnetism have potential application in spin-sensitive electronic（spintronic） devices. The search for DMS material...Diluted ferromagnetic semiconductors（DMSs） that combine the properties of semiconductors with ferromagnetism have potential application in spin-sensitive electronic（spintronic） devices. The search for DMS materials exploded after the observation of ferromagnetic ordering in Ⅲ-Ⅴ（Ga,Mn）As films. Recently, a series of DMS compounds isostructural to iron-based superconductors have been reported. Among them, the highest Curie temperature TCo f 230 K has been achieved in（Ba,K）（Zn,Mn）2As2. However, most DMSs, including（Ga,Mn）As, are p-type, i.e., the carriers that mediate the ferromagnetism are holes. For practical applications, DMSs with n-type carriers are also advantageous. Very recently,a new DMS Ba（Zn,Co）2As2 with n-type carriers has been synthesized. Here we summarize the recent progress on this research stream. We will show that the homogeneous ferromagnetism in these bulk form DMSs has been confirmed by microscopic techniques, i.e., nuclear magnetic resonance（NMR） and muon spin rotation（μSR）.展开更多
Magnetic oxide semiconductors are significant spintronics materials.In this article, we review recent advances for homogeneous and inhomogeneous magnetic oxide semiconductors.In the homogeneous magnetic oxide semicond...Magnetic oxide semiconductors are significant spintronics materials.In this article, we review recent advances for homogeneous and inhomogeneous magnetic oxide semiconductors.In the homogeneous magnetic oxide semiconductors,we focus on the various doping techniques including choosing different transition metals, codoping, non-magnetic doping,and even un-doping to realize homogeneous substitution and the clear magnetic origin.And the enhancement of the ferromagnetism is achieved by nanodot arrays engineering, which is accompanied by the tunable optical properties.In the inhomogeneous magnetic oxide semiconductors, we review some heterostructures and their magnetic and transport properties, especially magnetoresistance, which are dramatically modulated by electric field in the constructed devices.And the related mechanisms are discussed in details.Finally, we provide an overview and possible potential applications of magnetic oxide semiconductors.展开更多
Variations in magnetic and electronic properties as a function of uniaxial strain in wurtzite （Ga,Mn）As nanowires （NWs） grown along the [0001] direction were investigated based on density functional theory （DFT）...Variations in magnetic and electronic properties as a function of uniaxial strain in wurtzite （Ga,Mn）As nanowires （NWs） grown along the [0001] direction were investigated based on density functional theory （DFT）. We found that （Ga,Mn）As NWs are half-metal, and the ferromagnetic state is their stable ground state. The magnetism of the NWs is significantly affected by the strain and by the substituent position of Mn impurities. By examining charge densities near the Fermi level, we found that strain can regulate the conductive region of the N-Ws. More interestingly, the size of spin-down band gap of the NWs is tunable by adjusting uniaxial stress, and the NWs can be converted from indirect to direct band gap under tension.展开更多
This work reports the study concerning the structure and magnetic properties of undoped CeO_2 and Fe-doped CeO_2(Ce_(1-x) Fe_xO_2, 0.01 ≤ x ≤ 0.07) nanospheres with diameters of 100~200 nm prepared by hydrothermal m...This work reports the study concerning the structure and magnetic properties of undoped CeO_2 and Fe-doped CeO_2(Ce_(1-x) Fe_xO_2, 0.01 ≤ x ≤ 0.07) nanospheres with diameters of 100~200 nm prepared by hydrothermal method using polyvinylpyrrolidone(PVP) as surfactant. The prepared samples were studied by using X-ray diffraction(XRD), Raman spectroscopy, transmission electron microscopy(TEM), high-resolution transmission electron microscopy(HRTEM), X-ray absorption near-edge structure(XANES), and vibrating sample magnetometry(VSM). The XRD results showed that Fe-doped CeO_2 was single-phased with a cubic structure, and with Fe^(3+)successfully substituting in Ce^(4+) sites. Raman spectra showed a redshift of F_(2g) mode that caused by the Fe doping. The samples of both undoped CeO_2 and Fe-doped CeO_2 exhibited room temperature ferromagnetism, and the saturated magnetization(Ms) increased with increasing Fe content until x = 0.05, and then the samples displayed ferromagnetic loops as well as paramagnetic behavior. The roles of Ce^(3+) and Fe^(3+)spin electrons are discussed for the ferromagnetism in the Fe-doped CeO_2.展开更多
Heavily Mn-doped SiGe thin films were grown by radio frequency magnetron sputtering and then treated by postgrowth thermal annealing.Structural characterizations reveal the coexistence of Mn-diluted SiGe crystals and ...Heavily Mn-doped SiGe thin films were grown by radio frequency magnetron sputtering and then treated by postgrowth thermal annealing.Structural characterizations reveal the coexistence of Mn-diluted SiGe crystals and Mn-rich nanoclusters in the annealed films.Magnetic measurements indicate the ferromagnetic ordering of the annealed samples above room temperature.The data suggest that the ferromagnetism is probably mainly contributed by the Ge-rich nanoclusters and partially contributed by the tensile-strained Mn-diluted SiGe crystals.The results may be useful for room temperature spintronic applications based on group IV semiconductors.展开更多
The structural and magnetic properties of the Cu-doped ZnO（ZnO：Cu） under c-axis pressure were studied using first-principle calculations. It was found that the ZnO：Cu undergoes a structural transition from Wurtzit...The structural and magnetic properties of the Cu-doped ZnO（ZnO：Cu） under c-axis pressure were studied using first-principle calculations. It was found that the ZnO：Cu undergoes a structural transition from Wurtzite to Graphite-like structure at a c-axis pressure of 7–8 GPa. This is accompanied by an apparent loss of ferromagnetic stability, indicating a magnetic transformation from a ferromagnetic state to a paramagnetic-like state. Further studies revealed that the magnetic instability is closely related to the variation in crystalline field originated from the structural transition, which is in association with the overlapping of spin–charge density between the Cu^2＋ and adjacent O^2-.展开更多
Cux（Cu2O）1-x（0.09 x 1.00） granular films with thickness about 280 nm have been fabricated by direct current reactive magnetron sputtering. The atomic ratio x can be controlled by the oxygen flow rate during Cux（C...Cux（Cu2O）1-x（0.09 x 1.00） granular films with thickness about 280 nm have been fabricated by direct current reactive magnetron sputtering. The atomic ratio x can be controlled by the oxygen flow rate during Cux（Cu2O）1-x deposition. Room-temperature ferromagnetism（FM） is found in all of the samples. The saturated magnetization increases at first and then decreases with the decrease of x. The photoluminescence spectra show that the magnetization is closely correlated with the Cu vacancies in the Cux（Cu2O）1-x granular films. Fundamentally, the FM could be understood by the Stoner model based on the charge transfer mechanism. These results may provide solid evidence and physical insights on the origin of FM in the Cu2O-based oxides diluted magnetic semiconductors, especially for systems without intentional magnetic atom doping.展开更多
Zn0.90Ni0.10O nanoparticles have been synthesized by single-bath two-electrode electrodeposition at constant voltage. X-ray diffraction, UV vis and photoluminescence studies reveal that a single-phase polycrystalline ...Zn0.90Ni0.10O nanoparticles have been synthesized by single-bath two-electrode electrodeposition at constant voltage. X-ray diffraction, UV vis and photoluminescence studies reveal that a single-phase polycrystalline hcp wurtzite crystal structure of ZnO is evolved. The material consists of a large number of defects such as oxygen vacancy (Ov) and zinc interstitial (Zi). The magnetization study reveals that the sample exhibits room-temperature global ferromagnetism and the ferromagnetic ordering seems to be defect induced via bound magnetic polaron mechanism, and double exchange is also expected to have played role. Interesting optoelectronic properties have been found in the synthesized sample and the material seems to be a potential candidate to be used as a UV sensor. Such a transition metal doped ZnO based dilute magnetic semiconducting system exhibiting room-temperature ferromagnetism is likely to be first of its kind in the sense that such materials have not yet been reported to be synthesized by the simple method of electrodeposition to the best of our knowledge on the basis of ample literature review.展开更多
Pure single phase of Zn0.95Co0.05O bulks were successfully prepared by solid-state reaction method. The effects of annealing atmosphere and temperature on the room temperature ferromagnetic behavior were investigated....Pure single phase of Zn0.95Co0.05O bulks were successfully prepared by solid-state reaction method. The effects of annealing atmosphere and temperature on the room temperature ferromagnetic behavior were investigated. The results show that the air-annealed samples has similar weak ferromagnetic behavior with the as-sintered samples, but the obvious ferromagnetic behavior is observed for the samples annealed in vacuum or Ar/H2 gas, indicating that the strong ferromagnetism is associated with high oxygen vacancies density. High saturation magnetization Ms=0.73 μB/Co and coercivity Hc=233.8Oe are obtained for the Ar/H2 annealed samples with pure single phase structure when annealing temperature is 600℃.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.11274003)the Priority Academic Program Development of Jiangsu Higher Education Institutions,Chinathe Fundamental Research Funds for the Central Universities,China
文摘Nd-doped In_2O_3 nanowires were fabricated by an Au-catalyzed chemical vapor deposition method.Nd atoms were successfully doped into the In_2O_3 host lattice structure,as revealed by energy dispersive x-ray spectroscopy,x-ray photoelectron spectroscopy,Raman spectroscopy,and x-ray diffraction.Robust room temperature ferromagnetism was observed in Nd-doped In_2O_3 nanowires,which was attributed to the long-range-mediated magnetization among Nd^（3＋）-vacancy complexes through percolation-bound magnetic polarons.
基金Project supported by the Chinese Ministry of Science and Technology(Grant No.2016YFA0300402)the National Natural Science Foundation of China(Grant No.11574265)+1 种基金the Natural Science Foundation of Zhejiang Province,China(Grant Nos.LR15A040001 and LY14A040007)the Fundamental Research Funds for the Central Universities,China
文摘Diluted ferromagnetic semiconductors（DMSs） that combine the properties of semiconductors with ferromagnetism have potential application in spin-sensitive electronic（spintronic） devices. The search for DMS materials exploded after the observation of ferromagnetic ordering in Ⅲ-Ⅴ（Ga,Mn）As films. Recently, a series of DMS compounds isostructural to iron-based superconductors have been reported. Among them, the highest Curie temperature TCo f 230 K has been achieved in（Ba,K）（Zn,Mn）2As2. However, most DMSs, including（Ga,Mn）As, are p-type, i.e., the carriers that mediate the ferromagnetism are holes. For practical applications, DMSs with n-type carriers are also advantageous. Very recently,a new DMS Ba（Zn,Co）2As2 with n-type carriers has been synthesized. Here we summarize the recent progress on this research stream. We will show that the homogeneous ferromagnetism in these bulk form DMSs has been confirmed by microscopic techniques, i.e., nuclear magnetic resonance（NMR） and muon spin rotation（μSR）.
基金Project supported by the National Key Research and Development Program of China(Grant No.2017YFB0405703)the National Natural Science Foundation of China(Grant Nos.61434002,51571136,and 11274214)the Special Funds of Sanjin Scholars Program,China
文摘Magnetic oxide semiconductors are significant spintronics materials.In this article, we review recent advances for homogeneous and inhomogeneous magnetic oxide semiconductors.In the homogeneous magnetic oxide semiconductors,we focus on the various doping techniques including choosing different transition metals, codoping, non-magnetic doping,and even un-doping to realize homogeneous substitution and the clear magnetic origin.And the enhancement of the ferromagnetism is achieved by nanodot arrays engineering, which is accompanied by the tunable optical properties.In the inhomogeneous magnetic oxide semiconductors, we review some heterostructures and their magnetic and transport properties, especially magnetoresistance, which are dramatically modulated by electric field in the constructed devices.And the related mechanisms are discussed in details.Finally, we provide an overview and possible potential applications of magnetic oxide semiconductors.
基金supported by the National Natural Science Foundation of China(Grant Nos.11004141 and 11174212)the Program for New Century Excellent Talents in University of Ministry of Education of China(Grant No.11-0351)the Scientific Research Starting Foundation for the Returned Overseas Chinese Scholars,Ministry of Education of China
文摘Variations in magnetic and electronic properties as a function of uniaxial strain in wurtzite （Ga,Mn）As nanowires （NWs） grown along the [0001] direction were investigated based on density functional theory （DFT）. We found that （Ga,Mn）As NWs are half-metal, and the ferromagnetic state is their stable ground state. The magnetism of the NWs is significantly affected by the strain and by the substituent position of Mn impurities. By examining charge densities near the Fermi level, we found that strain can regulate the conductive region of the N-Ws. More interestingly, the size of spin-down band gap of the NWs is tunable by adjusting uniaxial stress, and the NWs can be converted from indirect to direct band gap under tension.
基金the Thailand Research Fund through the Royal Golden Jubilee Ph.D.program (Grant No. PHD/0275/2550)supported by Suranaree University of Technology (SUT)the Office of the Higher Education Commission under NRU project of Thailand
文摘This work reports the study concerning the structure and magnetic properties of undoped CeO_2 and Fe-doped CeO_2(Ce_(1-x) Fe_xO_2, 0.01 ≤ x ≤ 0.07) nanospheres with diameters of 100~200 nm prepared by hydrothermal method using polyvinylpyrrolidone(PVP) as surfactant. The prepared samples were studied by using X-ray diffraction(XRD), Raman spectroscopy, transmission electron microscopy(TEM), high-resolution transmission electron microscopy(HRTEM), X-ray absorption near-edge structure(XANES), and vibrating sample magnetometry(VSM). The XRD results showed that Fe-doped CeO_2 was single-phased with a cubic structure, and with Fe^(3+)successfully substituting in Ce^(4+) sites. Raman spectra showed a redshift of F_(2g) mode that caused by the Fe doping. The samples of both undoped CeO_2 and Fe-doped CeO_2 exhibited room temperature ferromagnetism, and the saturated magnetization(Ms) increased with increasing Fe content until x = 0.05, and then the samples displayed ferromagnetic loops as well as paramagnetic behavior. The roles of Ce^(3+) and Fe^(3+)spin electrons are discussed for the ferromagnetism in the Fe-doped CeO_2.
基金Project supported by the National Key R&D Program of China(Grant No.2017YFB0405702)the National Natural Science Foundation of China(Grant No.51671137).
文摘Heavily Mn-doped SiGe thin films were grown by radio frequency magnetron sputtering and then treated by postgrowth thermal annealing.Structural characterizations reveal the coexistence of Mn-diluted SiGe crystals and Mn-rich nanoclusters in the annealed films.Magnetic measurements indicate the ferromagnetic ordering of the annealed samples above room temperature.The data suggest that the ferromagnetism is probably mainly contributed by the Ge-rich nanoclusters and partially contributed by the tensile-strained Mn-diluted SiGe crystals.The results may be useful for room temperature spintronic applications based on group IV semiconductors.
基金supported by the National Natural Science Foundation of China(Grant Nos.51031004 and 51272078)the Natural Science Foundation of Guangdong,China(Grant No.S2012010008124)+3 种基金the National Basic Research Program of China(Grant No.2015CB921202)the Project for Guangdong Province Universities and Colleges Pearl River Scholar Funded Scheme(2014)International Science & Technology Cooperation Platform Program of Guangzhou,China(Grant No.2014J4500016)the Program for Changjiang Scholars and Innovative Research Team in University of Ministry of Education of China(Grant No.IRT1243)
文摘The structural and magnetic properties of the Cu-doped ZnO（ZnO：Cu） under c-axis pressure were studied using first-principle calculations. It was found that the ZnO：Cu undergoes a structural transition from Wurtzite to Graphite-like structure at a c-axis pressure of 7–8 GPa. This is accompanied by an apparent loss of ferromagnetic stability, indicating a magnetic transformation from a ferromagnetic state to a paramagnetic-like state. Further studies revealed that the magnetic instability is closely related to the variation in crystalline field originated from the structural transition, which is in association with the overlapping of spin–charge density between the Cu^2＋ and adjacent O^2-.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11104148,51101088,and 51171082)the Tianjin Natural Science Foundation,China(Grant Nos.14JCZDJC37700 and 13JCQNJC02800)+1 种基金the Specialized Research Fund for the Doctoral Program of Higher Education,China(Grant No.20110031110034)the Fundamental Research Funds for the Central Universities,China
文摘Cux（Cu2O）1-x（0.09 x 1.00） granular films with thickness about 280 nm have been fabricated by direct current reactive magnetron sputtering. The atomic ratio x can be controlled by the oxygen flow rate during Cux（Cu2O）1-x deposition. Room-temperature ferromagnetism（FM） is found in all of the samples. The saturated magnetization increases at first and then decreases with the decrease of x. The photoluminescence spectra show that the magnetization is closely correlated with the Cu vacancies in the Cux（Cu2O）1-x granular films. Fundamentally, the FM could be understood by the Stoner model based on the charge transfer mechanism. These results may provide solid evidence and physical insights on the origin of FM in the Cu2O-based oxides diluted magnetic semiconductors, especially for systems without intentional magnetic atom doping.
基金Project supported by the UGC-DAE,Consortium for Scientific Research,Indore through its CRS project bearing No.CSR-IC/MSRSR-12/CRS-220/2017-18/1301.
文摘Zn0.90Ni0.10O nanoparticles have been synthesized by single-bath two-electrode electrodeposition at constant voltage. X-ray diffraction, UV vis and photoluminescence studies reveal that a single-phase polycrystalline hcp wurtzite crystal structure of ZnO is evolved. The material consists of a large number of defects such as oxygen vacancy (Ov) and zinc interstitial (Zi). The magnetization study reveals that the sample exhibits room-temperature global ferromagnetism and the ferromagnetic ordering seems to be defect induced via bound magnetic polaron mechanism, and double exchange is also expected to have played role. Interesting optoelectronic properties have been found in the synthesized sample and the material seems to be a potential candidate to be used as a UV sensor. Such a transition metal doped ZnO based dilute magnetic semiconducting system exhibiting room-temperature ferromagnetism is likely to be first of its kind in the sense that such materials have not yet been reported to be synthesized by the simple method of electrodeposition to the best of our knowledge on the basis of ample literature review.
基金This work was supported by the National Basic Research Program (973) under Grant No. 2007CB31407 the International S&T Cooperation Program of China under Grant No. 2006DFA53410.
文摘Pure single phase of Zn0.95Co0.05O bulks were successfully prepared by solid-state reaction method. The effects of annealing atmosphere and temperature on the room temperature ferromagnetic behavior were investigated. The results show that the air-annealed samples has similar weak ferromagnetic behavior with the as-sintered samples, but the obvious ferromagnetic behavior is observed for the samples annealed in vacuum or Ar/H2 gas, indicating that the strong ferromagnetism is associated with high oxygen vacancies density. High saturation magnetization Ms=0.73 μB/Co and coercivity Hc=233.8Oe are obtained for the Ar/H2 annealed samples with pure single phase structure when annealing temperature is 600℃.
