This study demonstrates the design and application of a novel high temperature rotatory apparatus for insitu synchrotron X-ray diffraction studies of molten salts,facilitating investigation into the interaction betwee...This study demonstrates the design and application of a novel high temperature rotatory apparatus for insitu synchrotron X-ray diffraction studies of molten salts,facilitating investigation into the interaction between various structural materials and molten salts.The apparatus enables accurate detection of every phase change during hightemperature experiments,including strong reaction processes like corrosion.Molten salts,such as chlorides or fluo⁃rides,together with the structure materials,are inserted into either quartz or boron nitride capillaries,where X-ray diffraction pattern can be continuously collected,as the samples are heated to high temperature.The replacement re⁃action,when molten ZnCl2 are etching Ti3AlC2,can be clearly observed through changes in diffraction peak intensity as well as expansion in c-axis lattice parameter of the hexagonal matrix,due to the larger atomic number and ionic ra⁃dius of Zn2+.Furthermore,we investigated the high-temperature corrosion process when GH3535 alloy is in FLiNaK molten salt,and can help to optimize its stability for potential applications in molten salt reactor.Additionally,this high temperature apparatus is fully compatible with the combined usage of X-ray diffraction and Raman technique,providing both bulk and surface structural information.This high temperature apparatus has been open to users and is extensively used at BL14B1 beamline of the Shanghai Synchrotron Radiation Facility.展开更多
Silicon(Si)diffraction microlens arrays are usually used to integrating with infrared focal plane arrays(IRFPAs)to improve their performance.The errors of lithography are unavoidable in the process of the Si diffrac-t...Silicon(Si)diffraction microlens arrays are usually used to integrating with infrared focal plane arrays(IRFPAs)to improve their performance.The errors of lithography are unavoidable in the process of the Si diffrac-tion microlens arrays preparation in the conventional engraving method.It has a serious impact on its performance and subsequent applications.In response to the problem of errors of Si diffraction microlens arrays in the conven-tional method,a novel self-alignment method for high precision Si diffraction microlens arrays preparation is pro-posed.The accuracy of the Si diffractive microlens arrays preparation is determined by the accuracy of the first li-thography mask in the novel self-alignment method.In the subsequent etching,the etched area will be protected by the mask layer and the sacrifice layer or the protective layer.The unprotection area is carved to effectively block the non-etching areas,accurately etch the etching area required,and solve the problem of errors.The high precision Si diffraction microlens arrays are obtained by the novel self-alignment method and the diffraction effi-ciency could reach 92.6%.After integrating with IRFPAs,the average blackbody responsity increased by 8.3%,and the average blackbody detectivity increased by 10.3%.It indicates that the Si diffraction microlens arrays can improve the filling factor and reduce crosstalk of IRFPAs through convergence,thereby improving the perfor-mance of the IRFPAs.The results are of great reference significance for improving their performance through opti-mizing the preparation level of micro nano devices.展开更多
The ingots of Pr0.15TbxDy0.85-xFe2 （x=0.10-0.85） series compounds with a single phase were prepared -by a arc melting method. The X-ray diffraction patterns were measured using a Philips X’pert MPD X-ray diffractom...The ingots of Pr0.15TbxDy0.85-xFe2 （x=0.10-0.85） series compounds with a single phase were prepared -by a arc melting method. The X-ray diffraction patterns were measured using a Philips X’pert MPD X-ray diffractometer with a non-ambient sample stage at different temperatures, the magnetostrictive distortion in (Pr0.15TbxDy0.85-xFe2) polycrystals was investigated by X-ray diffraction patterns and the magnetostriction coefficient λ111 was calculated. The results show -when the temperature is raised above the spin reorientation temperature region, a splitting appears in the reflection （440）; the λ111 increase with the increasing of Tb content for (Pr0.15TbxDy0.85-xFe2) polycrystals and the full width at half maximum （FWHM） of the reflection （440） increases gradually with the increasing of Tb content. Moreover, as the FWHM of the reflection （440） decreases gradually with the increasing of temperature, the λ111 decreases slightly with the increasing of temperature at the temperature region of 223-373K for Pr0.15Tb0.3Dy0.55Fe2 alloy.展开更多
为提高管道环焊缝超声衍射时差法(time of flight diffraction,TOFD)扫描图谱在背景信号干扰、样本量不均衡等情况下的缺陷识别效果,提出了一种改进的YOLOv5s网络模型.针对管道环焊缝TOFD图谱中缺陷形态不规则的特点,通过引入可变形卷积...为提高管道环焊缝超声衍射时差法(time of flight diffraction,TOFD)扫描图谱在背景信号干扰、样本量不均衡等情况下的缺陷识别效果,提出了一种改进的YOLOv5s网络模型.针对管道环焊缝TOFD图谱中缺陷形态不规则的特点,通过引入可变形卷积,使得网络自适应缺陷自身的形状特点,提高TOFD图谱中不规则缺陷的特征提取能力;针对TOFD扫描图谱中直通波和底面波等干扰波形对缺陷识别的影响,通过在网络不同深度分别添加自注意力机制,引导网络关注缺陷细微特征的同时抑制界面波对缺陷识别的影响;针对实际样本中各类缺陷不均衡的情况,采用SlideLoss损失函数代替原损失函数,提高网络对样本量较少的裂纹类缺陷的识别精度.对比试验结果表明,改进后的网络能够抑制TOFD图谱复杂背景干扰,提高样本不均衡条件下的识别率.相比原网络,整体平均识别率均值(mean Average Precision,mAP)和裂纹类缺陷的平均识别率(Average Precision,AP)分别提高了8.2%和7.3%.展开更多
基金CAS Photon Science Research Center for Carbon DioxideCAS President’s International Fellowship Initiative(2024PVA0097)+1 种基金National Key Research and Development Program of China(2017YFA0403000,2017YFA0402800)National Natural Science Foundation of China(U1932201,U1732121)。
文摘This study demonstrates the design and application of a novel high temperature rotatory apparatus for insitu synchrotron X-ray diffraction studies of molten salts,facilitating investigation into the interaction between various structural materials and molten salts.The apparatus enables accurate detection of every phase change during hightemperature experiments,including strong reaction processes like corrosion.Molten salts,such as chlorides or fluo⁃rides,together with the structure materials,are inserted into either quartz or boron nitride capillaries,where X-ray diffraction pattern can be continuously collected,as the samples are heated to high temperature.The replacement re⁃action,when molten ZnCl2 are etching Ti3AlC2,can be clearly observed through changes in diffraction peak intensity as well as expansion in c-axis lattice parameter of the hexagonal matrix,due to the larger atomic number and ionic ra⁃dius of Zn2+.Furthermore,we investigated the high-temperature corrosion process when GH3535 alloy is in FLiNaK molten salt,and can help to optimize its stability for potential applications in molten salt reactor.Additionally,this high temperature apparatus is fully compatible with the combined usage of X-ray diffraction and Raman technique,providing both bulk and surface structural information.This high temperature apparatus has been open to users and is extensively used at BL14B1 beamline of the Shanghai Synchrotron Radiation Facility.
基金Supported by the National Natural Science Foundation of China(NSFC 62105100)the National Key research and development program in the 14th five year plan(2021YFA1200700)。
文摘Silicon(Si)diffraction microlens arrays are usually used to integrating with infrared focal plane arrays(IRFPAs)to improve their performance.The errors of lithography are unavoidable in the process of the Si diffrac-tion microlens arrays preparation in the conventional engraving method.It has a serious impact on its performance and subsequent applications.In response to the problem of errors of Si diffraction microlens arrays in the conven-tional method,a novel self-alignment method for high precision Si diffraction microlens arrays preparation is pro-posed.The accuracy of the Si diffractive microlens arrays preparation is determined by the accuracy of the first li-thography mask in the novel self-alignment method.In the subsequent etching,the etched area will be protected by the mask layer and the sacrifice layer or the protective layer.The unprotection area is carved to effectively block the non-etching areas,accurately etch the etching area required,and solve the problem of errors.The high precision Si diffraction microlens arrays are obtained by the novel self-alignment method and the diffraction effi-ciency could reach 92.6%.After integrating with IRFPAs,the average blackbody responsity increased by 8.3%,and the average blackbody detectivity increased by 10.3%.It indicates that the Si diffraction microlens arrays can improve the filling factor and reduce crosstalk of IRFPAs through convergence,thereby improving the perfor-mance of the IRFPAs.The results are of great reference significance for improving their performance through opti-mizing the preparation level of micro nano devices.
基金Project(50271023) supported by the National Natural Science Foundation of China
文摘The ingots of Pr0.15TbxDy0.85-xFe2 （x=0.10-0.85） series compounds with a single phase were prepared -by a arc melting method. The X-ray diffraction patterns were measured using a Philips X’pert MPD X-ray diffractometer with a non-ambient sample stage at different temperatures, the magnetostrictive distortion in (Pr0.15TbxDy0.85-xFe2) polycrystals was investigated by X-ray diffraction patterns and the magnetostriction coefficient λ111 was calculated. The results show -when the temperature is raised above the spin reorientation temperature region, a splitting appears in the reflection （440）; the λ111 increase with the increasing of Tb content for (Pr0.15TbxDy0.85-xFe2) polycrystals and the full width at half maximum （FWHM） of the reflection （440） increases gradually with the increasing of Tb content. Moreover, as the FWHM of the reflection （440） decreases gradually with the increasing of temperature, the λ111 decreases slightly with the increasing of temperature at the temperature region of 223-373K for Pr0.15Tb0.3Dy0.55Fe2 alloy.
文摘为提高管道环焊缝超声衍射时差法(time of flight diffraction,TOFD)扫描图谱在背景信号干扰、样本量不均衡等情况下的缺陷识别效果,提出了一种改进的YOLOv5s网络模型.针对管道环焊缝TOFD图谱中缺陷形态不规则的特点,通过引入可变形卷积,使得网络自适应缺陷自身的形状特点,提高TOFD图谱中不规则缺陷的特征提取能力;针对TOFD扫描图谱中直通波和底面波等干扰波形对缺陷识别的影响,通过在网络不同深度分别添加自注意力机制,引导网络关注缺陷细微特征的同时抑制界面波对缺陷识别的影响;针对实际样本中各类缺陷不均衡的情况,采用SlideLoss损失函数代替原损失函数,提高网络对样本量较少的裂纹类缺陷的识别精度.对比试验结果表明,改进后的网络能够抑制TOFD图谱复杂背景干扰,提高样本不均衡条件下的识别率.相比原网络,整体平均识别率均值(mean Average Precision,mAP)和裂纹类缺陷的平均识别率(Average Precision,AP)分别提高了8.2%和7.3%.
