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题名用光栅的正负一级能量之比测体积相位全息光栅参量
被引量：2
- 1
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作者
李建龙
傅克祥
朱建华
张丽娟
曾阳素
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机构
四川大学物理科学与技术学院
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出处
《光子学报》
EI
CAS
CSCD
北大核心
2006年第2期239-243,共5页
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文摘
提出利用光栅衍射级次正负一级的能量之比(w+1/w-1),结合模拟退火优化算法来反演出光栅参量的一种方法.用正负一级的能量之比来弱化实际光栅表面存在的粗糙、周期畸变、介质折射率分布不均匀等误差,保证光栅参量的准确反演.在反演体积相位全息光栅参量的实验中,反演出的光栅参量与真值的误差不超过1%.证明了该法的正确性和可行性.同时此方法具有非破坏性,测量简单,操作方便,稳定性好等特点.
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关键词
衍射级次能量比(+1/-1)
模拟退火算法
光栅参量
体积相位全息光栅
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Keywords
diffractive efficiencies＇ ratio （ ＋ 1/- 1 ）
Simulated annealing algorithm
Optical parameters
VPHG
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分类号
TH391.41
[机械工程—机械制造及自动化]
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题名用光栅正负一级衍射效率之比反演光栅参数的数值模拟
被引量：1
- 2
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作者
张丽娟
李建龙
傅克祥
张珍辉
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机构
桂林电子科技大学电子工程系
四川大学物理科学和技术学院
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出处
《激光杂志》
CAS
CSCD
北大核心
2007年第3期41-42,共2页
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文摘
用衍射光栅的正负一级的能量之比来弱化衍射光栅表面的粗燥,周期的细微畸变,介质分布不均匀等带给实际光栅与理想光栅之间的差异,弥补实际光栅单一级次信息在实验测量中在反应光栅结构参数的缺陷。文中用数值模拟的方法优化反演了几种浮雕面型光栅的结构参数,反演结果较理想,数值论证了该法的可行性。
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关键词
模拟退火
光栅参数
正负一级衍射效率之比
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Keywords
Simulated Anneal Algorithm
grating parameters
diffraction efficiency ratio of orders m= ±1.
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分类号
TN247
[电子电信—物理电子学]
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题名电磁波在光栅表面上反射和衍射的理论研究
被引量：1
- 3
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作者
杨荣生
郭开周
宋文淼
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机构
中国科学院电子学研究所
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出处
《电子科学学刊》
CSCD
1991年第2期119-124,共6页
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文摘
本文从严格的场匹配方法出发,对电磁波在矩形截面光栅上的反射和衍射进行了理论研究。对这种光栅作为频率扫描天线的计算显示出,不论满足或不满足布喇格条件,在较宽的角度范围内入射,经调节槽宽和槽深都可获得理想的耀射。对于不满足布喇格条件,在两个互易角中较大的一个入射时,-1次衍射波有较高的效率和较宽的频带。而对这种光栅作为奥罗管中反射镜的特性的理论计算指出,它具有极宽的频带。同时本文还给出了不同频率平面波垂直入射时的等效光栅位置,以及电磁波在光栅表面反射时所引起的相位改变。
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关键词
扫描天线
电磁波
光栅
反射
衍射
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Keywords
Frequency scan antenna
efficiency of -1 order diffraction wave
Orotron
Reflection power
Effective grating position
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分类号
TN827.3
[电子电信—信息与通信工程]
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题名表面等离子体无掩膜干涉光刻系统的数值分析(英文)
被引量：5
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作者
董启明
郭小伟
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机构
电子科技大学光电信息学院
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出处
《光子学报》
EI
CAS
CSCD
北大核心
2012年第5期558-564,共7页
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基金
The National Natural Science Foundation of China(No.60906052)
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文摘
表面等离子体激元具有近场增强效应,可以代替光子作为曝光源形成纳米级特征尺寸的图像.本文数值分析了棱镜辅助表面等离子体干涉系统的参量空间,并给出了计算原理和方法.结果表明,适当地选择高折射率棱镜、低银层厚度、入射波长和光刻胶折射率,可以获得高曝光度、高对比度的干涉图像.入射波长为431nm时,选择40nm厚的银层,曝光深度可达200nm,条纹周期为110nm.数值分析结果为实验的安排提供了理论支持.
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关键词
干涉光刻
表面等离子体激元
克莱舒曼结构
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Keywords
Interference lithography
Surface plasmon plortiton
Kretschmann structureCLCN: TN305.7 Document Code:A Article ID:1.04-421.(201.)05-0558-70 IntroductionThere is a growing interest in exploring new nanolithography techniques with high efficiency,low cost and large-area fabrication to fabricate nanoscale devices for nanotechnology applications.Conventional photolithography has remained a useful microfabrication technology because of its ease of repetition and suitability for large-area fabrication[1..The {1. limit,however,restricts the fabrication scale of photolithography[2].Potential solutions that have actually been pursued require increasingly shorter illumination wavelengths for replicating smaller structures.It is becoming more difficult and complicated to use the short optical wavelengths to reach the desired feature sizes.Other methods such as electron beam lithography[3],ion beam lithography[4],scanning probe lithography[5],nanoimprint lithography(NIL)[6],and evanescent near-field optical lithography(ENFOL)[7] have been developed in order to achieve nanometer-scale features.As we know,the former three techniques need scanning and accordingly are highly inefficient.In NIL,the leveling of the imprint template and the substrate during the printing process,which determines the uniformity of the imprint result,is a challenging issue of this method.ENFOL have the potential to produce subwavelength structures with high efficiency,but it encounters the fact that the evanescent field decays rapidly through the aperture,thus attenuating the transmission intensity at the exit plane and limiting the exposure distance to the scale of a few tens of nanometers from the mask.In recent years,the use of surface-plasmon polaritons(SPPs) instead of photons as an exposure source was rapidly developed to fabricate nanoscale structures.SPPs are characterized by its near field enhancement so that SPP-based lithography can greatly extend exposure depth and improve pattern contrast.Grating-assisted SPP interference,such as SPP resonant interference nanolithography[8] and SPP-assisted interference nanolithography[9],achieved a sub-1.0nm interference pattern.The techniques,however,are necessary to fabricate a metal grating with a very fine period and only suitable for small-area interference.To avoid the fabrication of the metal grating,a prism-based SPP maskless interference lithography was proposed in 2006,which promises good lithography performance.The approach offers potential to achieve sub-65nm and even sub-32nm feature sizes.However,the structure parameters are always not ideal in a real system.One wants to know how much influence the parameter variations have on the pattern resolution and what variations of the parameters are allowed to obtain an effective interference.Thus,it is necessary to explore the parameter spaces.1.SPP maskless interference lithography systemThe SPP maskless interference lithography system is shown in Fig.1.A p-polarized laser is divided into two beams by a grating splitter,and then goes into the prism-based multilayer system.Under a given condition,the metal film can exhibit collective electron oscillations known as SPPs which are charge density waves that are characterized by intense electromagnetic fields confined to the metallic surface.If the metal layer Fig.1.Schematic for SPP maskless interference lithography systemis sufficiently thin,plasma waves at both metal interfaces are coupled,resulting in symmetric and antisymmetric SPPs.When the thickness h of metal film,dielectric constant ε1.ε2,ε3 of medium above,inside,below the metal film are specified,the coupling equation is shown as followstanh(S2h)(ε1.3S22+ε22S1.3)+(ε1.2S2S3+ε2ε3S1.2)=0
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分类号
TN305.7
[电子电信—物理电子学]
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