The optimal tracking performance for integrator and dead time plant in the case where plant uncertainty and control energy constraints are to be considered jointly is inrestigated. Firstly, an average cost function of...The optimal tracking performance for integrator and dead time plant in the case where plant uncertainty and control energy constraints are to be considered jointly is inrestigated. Firstly, an average cost function of the tracking error and the plant input energy over a class of stochastic model errors are defined. Then, we obtain an internal model controller design method that minimizes the average performance and further studies optimal tracking performance for integrator and dead time plant in the simultaneous presence of plant uncertainty and control energy constraint. The results can be used to evaluate optimal tracking performance and control energy in practical designs.展开更多
逆变器中死区时间会带来电流谐波和转矩脉动,从而导致感应电机出现明显振动并增加额外损耗。为减少逆变器死区效应带来的不利影响,提出一种基于高阶扩展状态观测器(high-order extended state observer,HO-ESO)的逆变器死区效应在线补...逆变器中死区时间会带来电流谐波和转矩脉动,从而导致感应电机出现明显振动并增加额外损耗。为减少逆变器死区效应带来的不利影响,提出一种基于高阶扩展状态观测器(high-order extended state observer,HO-ESO)的逆变器死区效应在线补偿方法。首先,对逆变器死区效应进行分析,推导出因死区效应而产生的d、q轴误差电压方程。接着,对传统的基于二阶ESO的死区效应补偿方法进行介绍和分析,由分析结果可知,该方法难以准确估计误差电压,从而导致补偿效果欠佳。进一步,设计一种HO-ESO对误差电压进行估计,并将其补偿到感应电机矢量控制系统中。最后,利用仿真和实验测试对所研究的死区效应补偿方法进行验证,并与传统的基于二阶ESO的死区效应补偿法进行对比。测试结果表明,相较于传统基于二阶ESO的死区效应补偿方法,所研究方法表现出更好的死区效应补偿性能。此外,所研究方法无需检测电流极性,易于实施。展开更多
为了保证三相桥臂安全可靠运行,需要设置合理的死区时间。氮化镓高电子迁移率晶体管Ga N HEMT(gallium nitride high-electron mobility transistor)由于器件本身特性,死区时间内电压变化情况与传统Si器件存在差异。对Ga N HEMT功率器...为了保证三相桥臂安全可靠运行,需要设置合理的死区时间。氮化镓高电子迁移率晶体管Ga N HEMT(gallium nitride high-electron mobility transistor)由于器件本身特性,死区时间内电压变化情况与传统Si器件存在差异。对Ga N HEMT功率器件反向导通压降较大的问题进行分析,提出了一种基于Ga N HEMT功率器件的改进型在线死区补偿方法。该方法既可以避免电路噪声对电流方向判断的影响,同时又可以减小相电压误差,降低电流谐波,提高电路稳定性。最后通过仿真实验和搭建实验平台验证了改进型在线死区补偿方法的有效性,在反向导通压降较大的情况下较传统的死区时间补偿方法具有明显的优势。展开更多
基金the High Technology Research and Development (863) Program (2003AA517020).
文摘The optimal tracking performance for integrator and dead time plant in the case where plant uncertainty and control energy constraints are to be considered jointly is inrestigated. Firstly, an average cost function of the tracking error and the plant input energy over a class of stochastic model errors are defined. Then, we obtain an internal model controller design method that minimizes the average performance and further studies optimal tracking performance for integrator and dead time plant in the simultaneous presence of plant uncertainty and control energy constraint. The results can be used to evaluate optimal tracking performance and control energy in practical designs.
基金Supported by National Basic Research Program of China （973 Program） （2009CB320604）, National Natural Science Foundation of China （60974043, 60904010）, the Funds for Creative Research Groups of China （60821063）, the 111 Project （B08015）, the Project of Technology Plan of Fujian Province （2009H0033）, and the Project of Technology Plan of Quanzhou （2007G6）
文摘逆变器中死区时间会带来电流谐波和转矩脉动,从而导致感应电机出现明显振动并增加额外损耗。为减少逆变器死区效应带来的不利影响,提出一种基于高阶扩展状态观测器(high-order extended state observer,HO-ESO)的逆变器死区效应在线补偿方法。首先,对逆变器死区效应进行分析,推导出因死区效应而产生的d、q轴误差电压方程。接着,对传统的基于二阶ESO的死区效应补偿方法进行介绍和分析,由分析结果可知,该方法难以准确估计误差电压,从而导致补偿效果欠佳。进一步,设计一种HO-ESO对误差电压进行估计,并将其补偿到感应电机矢量控制系统中。最后,利用仿真和实验测试对所研究的死区效应补偿方法进行验证,并与传统的基于二阶ESO的死区效应补偿法进行对比。测试结果表明,相较于传统基于二阶ESO的死区效应补偿方法,所研究方法表现出更好的死区效应补偿性能。此外,所研究方法无需检测电流极性,易于实施。
文摘为了保证三相桥臂安全可靠运行,需要设置合理的死区时间。氮化镓高电子迁移率晶体管Ga N HEMT(gallium nitride high-electron mobility transistor)由于器件本身特性,死区时间内电压变化情况与传统Si器件存在差异。对Ga N HEMT功率器件反向导通压降较大的问题进行分析,提出了一种基于Ga N HEMT功率器件的改进型在线死区补偿方法。该方法既可以避免电路噪声对电流方向判断的影响,同时又可以减小相电压误差,降低电流谐波,提高电路稳定性。最后通过仿真实验和搭建实验平台验证了改进型在线死区补偿方法的有效性,在反向导通压降较大的情况下较传统的死区时间补偿方法具有明显的优势。
