A novel source-connected field plate structure, featuring the same photolithography mask as the gate electrode, is proposed as an improvement over the conventional field plate （FP） techniques to enhance the frequenc...A novel source-connected field plate structure, featuring the same photolithography mask as the gate electrode, is proposed as an improvement over the conventional field plate （FP） techniques to enhance the frequency performance in GaN-based HEMTs. The influences of the field plate on frequency and breakdown performance are investigated simul- taneously by using a two-dimensional physics-based simulation. Compared with the conventional T-gate structures with a field plate length of 1.2 gm, this field plate structure can induce the small signal power gain at 10 GHz to increase by 5-9.5 dB, which depends on the distance between source FP and dramatically shortened gate FE This technique minimizes the parasitic capacitances, especially the gate-to-drain capacitance, showing a substantial potential for millimeter-wave, high power applications.展开更多
We demonstrate eftlcient generation of continuous spectrum centered at 40Ohm from solid thin plates. By frequency doubling of 0.8m J, 3Ors Ti：sapphire laser pulses with a BBO crystal, 0.2m J, 33fs laser pulses at 400...We demonstrate eftlcient generation of continuous spectrum centered at 40Ohm from solid thin plates. By frequency doubling of 0.8m J, 3Ors Ti：sapphire laser pulses with a BBO crystal, 0.2m J, 33fs laser pulses at 400nm are generated. Focusing the 400-nm pulses into 7 thin fused silica plates, we obtain 0.15mJ continuous spectrum covering 350-450 nm. After compressing by 3 pairs of chirped mirrors, 0. 12 m J, 8.6 fs pulses are achieved. To the best of our knowledge, this is the first time that sub-10-fs pulses centered at 400nm are generated by solid thin plates, which shows that spectral broadening in solid-state materials works not only at 800nm but also at different wavelengths.展开更多
In this paper, we present a two-dimensional （2D） fully analytical model with consideration of polarization effect for the channel potential and electric field distributions of the gate field-plated high electron mob...In this paper, we present a two-dimensional （2D） fully analytical model with consideration of polarization effect for the channel potential and electric field distributions of the gate field-plated high electron mobility transistor （FP-HEMT） on the basis of 2D Poisson＇s solution. The dependences of the channel potential and electric field distributions on drain bias, polarization charge density, FP structure parameters, A1GaN/GaN material parameters, etc. are investigated. A simple and convenient approach to designing high breakdown voltage FP-HEMTs is also proposed. The validity of this model is demonstrated by comparison with the numerical simulations with Silvaco-Atlas. The method in this paper can be extended to the development of other analytical models for different device structures, such as MIS-HEMTs, multiple-FP HETMs, slant-FP HEMTs, etc.展开更多
This article models a novel driving-day-based tradable credit scheme (DD-TCS) to alleviate urban traffic congestion. In this model, car-using allowances (in terms of the number of days in a month, termed as "cred...This article models a novel driving-day-based tradable credit scheme (DD-TCS) to alleviate urban traffic congestion. In this model, car-using allowances (in terms of the number of days in a month, termed as "credit") are freely and uniformly allocated to all travellers, who are also allowed to trade them in a market according to his/her travel needs (e.g. driving more or fewer days than the free endowment). As opposed to most studies on TCS, this paper explicitly considers the transaction cost (e.g. infor-mation cost of finding potential traders) in the trading market. To assess the feasibility of DD-TCS, we compare it against the license plate rationing (LPR) scheme, which has been practically implemented in many cities such as Beijing and Chengdu in China. Taking the performance of LPR as a benchmark, we quantify the threshold values of the transaction cost in DD-TCS when the two schemes yield equivalent performance (in terms of the total gener-alized cost). In numerical studies, we also compare the DD-TCS and LPR with the no-action case and the congestion pricing case (representing the theoretical optimum). Results show that both DD-TCS and LPR outperform the no-action case under certain conditions. With small trans-action cost, DD-TCS may achieve a lower system cost that can be very close to the ideal optimum. In addition, parameter analysis shows that DD-TCS performs better than LPR in a wide range of transaction cost, where the threshold values appear to account for a considerable portion of the auto travel time. This implies that DD-TCS will be more appealing than LPR in practice because a transaction cost lower than the extremely large threshold values can be easily achieved for the trading market, e.g. via a mobile platform and modern communication techniques.展开更多
基金supported by the Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915)the National Natural Science Foundation of China (Grant No. 61106106)the Fundamental Research Funds for the Central Universities, China (Grant No. K5051225013)
文摘A novel source-connected field plate structure, featuring the same photolithography mask as the gate electrode, is proposed as an improvement over the conventional field plate （FP） techniques to enhance the frequency performance in GaN-based HEMTs. The influences of the field plate on frequency and breakdown performance are investigated simul- taneously by using a two-dimensional physics-based simulation. Compared with the conventional T-gate structures with a field plate length of 1.2 gm, this field plate structure can induce the small signal power gain at 10 GHz to increase by 5-9.5 dB, which depends on the distance between source FP and dramatically shortened gate FE This technique minimizes the parasitic capacitances, especially the gate-to-drain capacitance, showing a substantial potential for millimeter-wave, high power applications.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11434016,11574384 and 11674386the National Key Basic Research Program of China under Grant Nos 2013CB922401 and 2013CB922402
文摘We demonstrate eftlcient generation of continuous spectrum centered at 40Ohm from solid thin plates. By frequency doubling of 0.8m J, 3Ors Ti：sapphire laser pulses with a BBO crystal, 0.2m J, 33fs laser pulses at 400nm are generated. Focusing the 400-nm pulses into 7 thin fused silica plates, we obtain 0.15mJ continuous spectrum covering 350-450 nm. After compressing by 3 pairs of chirped mirrors, 0. 12 m J, 8.6 fs pulses are achieved. To the best of our knowledge, this is the first time that sub-10-fs pulses centered at 400nm are generated by solid thin plates, which shows that spectral broadening in solid-state materials works not only at 800nm but also at different wavelengths.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61204085 and 61334002)the Fundamental Research Funds for the Central Universities,China(Grant No.K5051225013)
文摘In this paper, we present a two-dimensional （2D） fully analytical model with consideration of polarization effect for the channel potential and electric field distributions of the gate field-plated high electron mobility transistor （FP-HEMT） on the basis of 2D Poisson＇s solution. The dependences of the channel potential and electric field distributions on drain bias, polarization charge density, FP structure parameters, A1GaN/GaN material parameters, etc. are investigated. A simple and convenient approach to designing high breakdown voltage FP-HEMTs is also proposed. The validity of this model is demonstrated by comparison with the numerical simulations with Silvaco-Atlas. The method in this paper can be extended to the development of other analytical models for different device structures, such as MIS-HEMTs, multiple-FP HETMs, slant-FP HEMTs, etc.
基金supported by the National Natural Science Foundation of China (Project No.51608455)
文摘This article models a novel driving-day-based tradable credit scheme (DD-TCS) to alleviate urban traffic congestion. In this model, car-using allowances (in terms of the number of days in a month, termed as "credit") are freely and uniformly allocated to all travellers, who are also allowed to trade them in a market according to his/her travel needs (e.g. driving more or fewer days than the free endowment). As opposed to most studies on TCS, this paper explicitly considers the transaction cost (e.g. infor-mation cost of finding potential traders) in the trading market. To assess the feasibility of DD-TCS, we compare it against the license plate rationing (LPR) scheme, which has been practically implemented in many cities such as Beijing and Chengdu in China. Taking the performance of LPR as a benchmark, we quantify the threshold values of the transaction cost in DD-TCS when the two schemes yield equivalent performance (in terms of the total gener-alized cost). In numerical studies, we also compare the DD-TCS and LPR with the no-action case and the congestion pricing case (representing the theoretical optimum). Results show that both DD-TCS and LPR outperform the no-action case under certain conditions. With small trans-action cost, DD-TCS may achieve a lower system cost that can be very close to the ideal optimum. In addition, parameter analysis shows that DD-TCS performs better than LPR in a wide range of transaction cost, where the threshold values appear to account for a considerable portion of the auto travel time. This implies that DD-TCS will be more appealing than LPR in practice because a transaction cost lower than the extremely large threshold values can be easily achieved for the trading market, e.g. via a mobile platform and modern communication techniques.
