A CMOS active mixer based on voltage control load technique which can operate at 1.0 V supply voltage was proposed, and its operation principle, noise and linearity analysis were also presented. Contrary to the conven...A CMOS active mixer based on voltage control load technique which can operate at 1.0 V supply voltage was proposed, and its operation principle, noise and linearity analysis were also presented. Contrary to the conventional Gilbert-type mixer which is based on RF current-commutating, the load impedance in this proposed mixer is controlled by the LO signal, and it has only two stacked transistors at each branch which is suitable for low voltage applications. The mixer was designed and fabricated in 0.18 tam CMOS process for 2.4 GHz ISM band applications. With an input of 2.44 GHz RF signal and 2.442 GHz LO signal, the measurement specifications of the proposed mixer are： the conversion gain （Gc） is 5.3 dB, the input-referred third-order intercept point （PIIP3） is 4.6 dBm, the input-referred 1 dB compression point （P1dB） is --7.4 dBm, and the single-sideband noise figure （NFSSB） is 21.7 dB.展开更多
The graded density impactor(GDI)dynamic loading technique is crucial for acquiring the dynamic physical property parameters of materials used in weapons.The accuracy and timeliness of GDI structural design are key to ...The graded density impactor(GDI)dynamic loading technique is crucial for acquiring the dynamic physical property parameters of materials used in weapons.The accuracy and timeliness of GDI structural design are key to achieving controllable stress-strain rate loading.In this study,we have,for the first time,combined one-dimensional fluid computational software with machine learning methods.We first elucidated the mechanisms by which GDI structures control stress and strain rates.Subsequently,we constructed a machine learning model to create a structure-property response surface.The results show that altering the loading velocity and interlayer thickness has a pronounced regulatory effect on stress and strain rates.In contrast,the impedance distribution index and target thickness have less significant effects on stress regulation,although there is a matching relationship between target thickness and interlayer thickness.Compared with traditional design methods,the machine learning approach offers a10^(4)—10^(5)times increase in efficiency and the potential to achieve a global optimum,holding promise for guiding the design of GDI.展开更多
Analyzes the mechanism of overvoltage when contactless tap changer switch which is applied in distributing transformer converted directly.When the device convert the tap off,it employs the way that the SSR is switche...Analyzes the mechanism of overvoltage when contactless tap changer switch which is applied in distributing transformer converted directly.When the device convert the tap off,it employs the way that the SSR is switched on when voltage through zero and switched off when current through zero.But in the experiment we found that overvoltage will occur in the process of changing tap changer.The paper illustrates the mechanism of overvoltage in theory by analyzing the equivalent circuit and using analytic method of transition process.展开更多
基金Project(61166004) supported by the National Natural Science Foundation of ChinaProject(09ZCGHHZ00200) supported by the International Scientific and Technological Cooperation Program of Science and Technology Plan of Tianjin,ChinaProject(UF10028Y)supported by the Doctoral Scientific Research Foundation for Guilin University of Electronic Technology,China
文摘A CMOS active mixer based on voltage control load technique which can operate at 1.0 V supply voltage was proposed, and its operation principle, noise and linearity analysis were also presented. Contrary to the conventional Gilbert-type mixer which is based on RF current-commutating, the load impedance in this proposed mixer is controlled by the LO signal, and it has only two stacked transistors at each branch which is suitable for low voltage applications. The mixer was designed and fabricated in 0.18 tam CMOS process for 2.4 GHz ISM band applications. With an input of 2.44 GHz RF signal and 2.442 GHz LO signal, the measurement specifications of the proposed mixer are： the conversion gain （Gc） is 5.3 dB, the input-referred third-order intercept point （PIIP3） is 4.6 dBm, the input-referred 1 dB compression point （P1dB） is --7.4 dBm, and the single-sideband noise figure （NFSSB） is 21.7 dB.
基金supported by the Guangdong Major Project of Basic and Applied Basic Research(Grant No.2021B0301030001)the National Key Research and Development Program of China(Grant No.2021YFB3802300)the Foundation of National Key Laboratory of Shock Wave and Detonation Physics(Grant No.JCKYS2022212004)。
文摘The graded density impactor(GDI)dynamic loading technique is crucial for acquiring the dynamic physical property parameters of materials used in weapons.The accuracy and timeliness of GDI structural design are key to achieving controllable stress-strain rate loading.In this study,we have,for the first time,combined one-dimensional fluid computational software with machine learning methods.We first elucidated the mechanisms by which GDI structures control stress and strain rates.Subsequently,we constructed a machine learning model to create a structure-property response surface.The results show that altering the loading velocity and interlayer thickness has a pronounced regulatory effect on stress and strain rates.In contrast,the impedance distribution index and target thickness have less significant effects on stress regulation,although there is a matching relationship between target thickness and interlayer thickness.Compared with traditional design methods,the machine learning approach offers a10^(4)—10^(5)times increase in efficiency and the potential to achieve a global optimum,holding promise for guiding the design of GDI.
基金Harbin science an technology officecontract num ber is 0 0 112 110 98
文摘Analyzes the mechanism of overvoltage when contactless tap changer switch which is applied in distributing transformer converted directly.When the device convert the tap off,it employs the way that the SSR is switched on when voltage through zero and switched off when current through zero.But in the experiment we found that overvoltage will occur in the process of changing tap changer.The paper illustrates the mechanism of overvoltage in theory by analyzing the equivalent circuit and using analytic method of transition process.
