CeO2/YSZ/CeO2 buffer layers were prepared on biaxial textured Ni-5at.%W substrate by direct-current magnetron reactive sputtering with the optimum process. YBCO thin films were deposited on CeO2/YSZ/CeO2 buffered Ni-5...CeO2/YSZ/CeO2 buffer layers were prepared on biaxial textured Ni-5at.%W substrate by direct-current magnetron reactive sputtering with the optimum process. YBCO thin films were deposited on CeO2/YSZ/CeO2 buffered Ni-5at.%W substrate at temperature ranging from 500℃ to 700℃ by diode de sputtering. By optimizing substrate temperature, pure c-axis oriented YBCO films were obtained. The mierostruetures of CeO2/YSZ/CeO2 buffer layers were characterized by X-ray diffraction. A smooth, dense and crack-free surface morphology was observed with scanning electron microscopy. The critical current density Jc about 0.75 MA/cm2 at 77 K was obtained.展开更多
MgO thin films with different textures are fabricated by the ion beam assisted （IBAD） method on the Y2O3/Al2O3 buffered C276 tape. Then a CaO2 layer is directly grown on the IBAD-MgO film by the pulsed laser deposit...MgO thin films with different textures are fabricated by the ion beam assisted （IBAD） method on the Y2O3/Al2O3 buffered C276 tape. Then a CaO2 layer is directly grown on the IBAD-MgO film by the pulsed laser deposition （PLD） method. Effects of lBAD-MgO texture, substrata temperature and thickness on the grain alignment of the CeO2 layer are investigated. Film characterization is performed by x-ray diffraction and atomic force microscopy. It is found that the orientation and texture degree of the CaO2 layer are very sensitive to the IBAD-MgO texture. By optimizing the IBAD-MgO texture, CeO2 has pure （002） orientation and excellent biaxial texture deposited in a broad substrata temperature range. In addition, the PLD-CeO2 layer has a thickness effect. Under the optimized experimental condition, the PLD-CeO2 layer has a high in-plane texture of △φ = 2.9° and a smooth surface with an rms surface roughness of less than 2nm. The critical current density Jc of a 0.4μm-thick YBCO film deposited on the CeO2 layer is 6.25 × 106 A/cm2 at 77K and a self-field.展开更多
Conductor qualification will be carried out with four Cable-in-Conduit Conductor （CICC） samples made of superconducting strands. The direct current （DC） performance of these samples will be tested in the SULTAN fa...Conductor qualification will be carried out with four Cable-in-Conduit Conductor （CICC） samples made of superconducting strands. The direct current （DC） performance of these samples will be tested in the SULTAN facility. The critical current densities of the strands can be well simulated by empirical equations. In this paper, a model is illustrated to predict the DC behaviour of the cable in light of the single strand＇s experimental properties. The simulation results were compared with experimental results.展开更多
A novel method for calculating the magnetic stiffness matrix was proposed for the numerical analysis of the magneto-elastic stability of complicated current-carrying structures aim- ing for application in the magneto-...A novel method for calculating the magnetic stiffness matrix was proposed for the numerical analysis of the magneto-elastic stability of complicated current-carrying structures aim- ing for application in the magneto-elastic behavior of the tokamak system. A code based on the proposed method was developed and applied to the numerical analysis of two typical current- carrying structures. The good consistency of the numerical and analytical results validated the proposed method and the related numerical code.展开更多
Development of p-type transparent conducting thin films is tireless due to the trade-off issue between optical transparency and conductivity. The rarely concerned low normal state resistance makes Bi-based superconduc...Development of p-type transparent conducting thin films is tireless due to the trade-off issue between optical transparency and conductivity. The rarely concerned low normal state resistance makes Bi-based superconducting cuprates the potential hole-type transparent conductors, which have been realized in Bi_(2)Sr_(2)CaCu_(2)O_(y) thin films. In this study, epitaxial superconducting Bi_(2)Sr_(2)CuO_(y) and Bi_(2)Sr_(1.8)Nd_(0.2)CuO_(y) thin films with superior normal state conductivity are proposed as ptype transparent conductors. It is found that the Bi_(2)Sr_(1.8)Nd_(0.2)CuO_(y) thin film with thickness 15 nm shows an average visible transmittance of 65% and room-temperature sheet resistance of 650 Ω/sq. The results further demonstrate that Bi-based cuprate superconductors can be regarded as potential p-type transparent conductors for future optoelectronic applications.展开更多
A battery drivable low-voltage transparent lightly antimony（Sb）-doped SnO2 nanowire electric-double-layer （EDL） field-effect transistor （FET） is fabricated on an ITO glass substrate at room temperature. An ultra...A battery drivable low-voltage transparent lightly antimony（Sb）-doped SnO2 nanowire electric-double-layer （EDL） field-effect transistor （FET） is fabricated on an ITO glass substrate at room temperature. An ultralow operation voltage of 1 V is obtained on account of an untralarge specific gate capacitance （- 2.14 μF/cm2） directly bound up with mobile ions-induced EDL （sandwiched between the top and bottom electrodes） effect. The transparent FET shows excellent electric characteristics with a field-effect mobility of 54.43 cm2/V. s, current on/off ration of 2 × 104, and subthreshold gate voltage swing （S = dVgs/d（logIds）） of 140 mV/decade. The threshold voltage Yth （0.1 V） is estimated which indicates that the SnO2 namowire transistor operates in an n-type enhanced mode. Such a low-voltage transparent nanowire transistor gated by a microporous SiO2-based solid electrolyte is very promising for battery-powered portable nanoscale sensors.展开更多
In this study, an algebraic current-voltage(I-V) equation suitable for the hand-calculation of ballistic nano conductors is derived from Landauer's formulation. A voltage and temperature dependent resistance expre...In this study, an algebraic current-voltage(I-V) equation suitable for the hand-calculation of ballistic nano conductors is derived from Landauer's formulation. A voltage and temperature dependent resistance expression is also obtained. It is shown that the presented algebraic I-V expression and the original Landauer's formula give the same characteristics as expected. Moreover, the I-V characteristics of ballistic nano conductors are investigated and it is concluded that there is an inescapable nonlinearity originating from the curvature of Fermi-Dirac distribution function in low voltage range. Finally, the total harmonic distortion(THD) of a sample ballistic nano conductor caused from its low voltage nonlinearity is computed via HSPICE simulations.展开更多
Several types of REBa2Cu3O7-x （REBCO, RE=Y, Ho etc.） films are prepared on single crystal substrate LaAIO3 by TFA-MOD method. The phase transformation and optimized growth conditions in the crystallization are studi...Several types of REBa2Cu3O7-x （REBCO, RE=Y, Ho etc.） films are prepared on single crystal substrate LaAIO3 by TFA-MOD method. The phase transformation and optimized growth conditions in the crystallization are studied. Compared with SmBCO and GdBCO, high quality YBCO and HoBCO films are relatively easy to produce. It is revealed that the YBCO grains can form at low temperatures such as 730 ℃ during the initial heating ramp. With a high heating rate of 20 K/min and a low oxygen pressure of 100 ppm, the optimum growth temperature is around 780℃, at which the films show a Jc value of 2.88 MMcm2. Further decrease of the heating rate may produce the highquality YBCO Film with a higher Jc of 3.65 MA/cm2. The temperature dependence of resistances in various magnetic fields up to 9 T shows that the present TFAMOD YBCO and HoBCO films have similar superonducting transition temperature and magnetotransport properties.展开更多
文摘CeO2/YSZ/CeO2 buffer layers were prepared on biaxial textured Ni-5at.%W substrate by direct-current magnetron reactive sputtering with the optimum process. YBCO thin films were deposited on CeO2/YSZ/CeO2 buffered Ni-5at.%W substrate at temperature ranging from 500℃ to 700℃ by diode de sputtering. By optimizing substrate temperature, pure c-axis oriented YBCO films were obtained. The mierostruetures of CeO2/YSZ/CeO2 buffer layers were characterized by X-ray diffraction. A smooth, dense and crack-free surface morphology was observed with scanning electron microscopy. The critical current density Jc about 0.75 MA/cm2 at 77 K was obtained.
基金Supported by the ITER Project of the Ministry of Science and Technology of China under Grant No 2011GB113004the Shanghai Commission of Science and Technology under Grant Nos 09DZ1206000 and 11DZ1100402the Youth Fund of Natural Science Foundation of China under Grant No 11204174
文摘MgO thin films with different textures are fabricated by the ion beam assisted （IBAD） method on the Y2O3/Al2O3 buffered C276 tape. Then a CaO2 layer is directly grown on the IBAD-MgO film by the pulsed laser deposition （PLD） method. Effects of lBAD-MgO texture, substrata temperature and thickness on the grain alignment of the CeO2 layer are investigated. Film characterization is performed by x-ray diffraction and atomic force microscopy. It is found that the orientation and texture degree of the CaO2 layer are very sensitive to the IBAD-MgO texture. By optimizing the IBAD-MgO texture, CeO2 has pure （002） orientation and excellent biaxial texture deposited in a broad substrata temperature range. In addition, the PLD-CeO2 layer has a thickness effect. Under the optimized experimental condition, the PLD-CeO2 layer has a high in-plane texture of △φ = 2.9° and a smooth surface with an rms surface roughness of less than 2nm. The critical current density Jc of a 0.4μm-thick YBCO film deposited on the CeO2 layer is 6.25 × 106 A/cm2 at 77K and a self-field.
基金supported by the National Basic Research Program of China (No.151J00035602)
文摘Conductor qualification will be carried out with four Cable-in-Conduit Conductor （CICC） samples made of superconducting strands. The direct current （DC） performance of these samples will be tested in the SULTAN facility. The critical current densities of the strands can be well simulated by empirical equations. In this paper, a model is illustrated to predict the DC behaviour of the cable in light of the single strand＇s experimental properties. The simulation results were compared with experimental results.
基金supported by National Magnetic Confinement Fusion Program of China (Nos. 2009GB104002, 2013GB113005)National Natural Science Foundation of China (Nos. 50977070, 51277139, 11021202)the National Basic Research Program of National China(No. 2011CB610303)
文摘A novel method for calculating the magnetic stiffness matrix was proposed for the numerical analysis of the magneto-elastic stability of complicated current-carrying structures aim- ing for application in the magneto-elastic behavior of the tokamak system. A code based on the proposed method was developed and applied to the numerical analysis of two typical current- carrying structures. The good consistency of the numerical and analytical results validated the proposed method and the related numerical code.
基金Project supported by the National Natural Science Foundation of China (Grant No. 11604337)。
文摘Development of p-type transparent conducting thin films is tireless due to the trade-off issue between optical transparency and conductivity. The rarely concerned low normal state resistance makes Bi-based superconducting cuprates the potential hole-type transparent conductors, which have been realized in Bi_(2)Sr_(2)CaCu_(2)O_(y) thin films. In this study, epitaxial superconducting Bi_(2)Sr_(2)CuO_(y) and Bi_(2)Sr_(1.8)Nd_(0.2)CuO_(y) thin films with superior normal state conductivity are proposed as ptype transparent conductors. It is found that the Bi_(2)Sr_(1.8)Nd_(0.2)CuO_(y) thin film with thickness 15 nm shows an average visible transmittance of 65% and room-temperature sheet resistance of 650 Ω/sq. The results further demonstrate that Bi-based cuprate superconductors can be regarded as potential p-type transparent conductors for future optoelectronic applications.
基金Project supported by the National Natural Science Foundation of China (Grant No. 10874042)
文摘A battery drivable low-voltage transparent lightly antimony（Sb）-doped SnO2 nanowire electric-double-layer （EDL） field-effect transistor （FET） is fabricated on an ITO glass substrate at room temperature. An ultralow operation voltage of 1 V is obtained on account of an untralarge specific gate capacitance （- 2.14 μF/cm2） directly bound up with mobile ions-induced EDL （sandwiched between the top and bottom electrodes） effect. The transparent FET shows excellent electric characteristics with a field-effect mobility of 54.43 cm2/V. s, current on/off ration of 2 × 104, and subthreshold gate voltage swing （S = dVgs/d（logIds）） of 140 mV/decade. The threshold voltage Yth （0.1 V） is estimated which indicates that the SnO2 namowire transistor operates in an n-type enhanced mode. Such a low-voltage transparent nanowire transistor gated by a microporous SiO2-based solid electrolyte is very promising for battery-powered portable nanoscale sensors.
文摘In this study, an algebraic current-voltage(I-V) equation suitable for the hand-calculation of ballistic nano conductors is derived from Landauer's formulation. A voltage and temperature dependent resistance expression is also obtained. It is shown that the presented algebraic I-V expression and the original Landauer's formula give the same characteristics as expected. Moreover, the I-V characteristics of ballistic nano conductors are investigated and it is concluded that there is an inescapable nonlinearity originating from the curvature of Fermi-Dirac distribution function in low voltage range. Finally, the total harmonic distortion(THD) of a sample ballistic nano conductor caused from its low voltage nonlinearity is computed via HSPICE simulations.
基金This work was supported by the National Natural Science Foundation of China under Grant No. 50672057, 50702033 and 10774098the National Science Foundation of China (973 Projects) under Grant No. 2006CB601005+1 种基金the Science and Technology Commission of Shanghai Municipality under Grant No. 0752nm017the Project Based Personnel Exchange Program between China and Germany under Grant No. [2006] 3139.
文摘Several types of REBa2Cu3O7-x （REBCO, RE=Y, Ho etc.） films are prepared on single crystal substrate LaAIO3 by TFA-MOD method. The phase transformation and optimized growth conditions in the crystallization are studied. Compared with SmBCO and GdBCO, high quality YBCO and HoBCO films are relatively easy to produce. It is revealed that the YBCO grains can form at low temperatures such as 730 ℃ during the initial heating ramp. With a high heating rate of 20 K/min and a low oxygen pressure of 100 ppm, the optimum growth temperature is around 780℃, at which the films show a Jc value of 2.88 MMcm2. Further decrease of the heating rate may produce the highquality YBCO Film with a higher Jc of 3.65 MA/cm2. The temperature dependence of resistances in various magnetic fields up to 9 T shows that the present TFAMOD YBCO and HoBCO films have similar superonducting transition temperature and magnetotransport properties.
